公开(公告)号：US09490106B2

公开(公告)日：2016-11-08

申请号：US13198683

申请日：2011-08-04

申请人： John Drewery ,  Maolin Long ,  Alex Paterson

发明人： John Drewery ,  Maolin Long ,  Alex Paterson

IPC分类号： H01J37/32

CPC分类号： H01J37/32651 ,  H01J37/321 ,  H01J37/32633

摘要： Plasma processing chambers having internal Faraday shields with defined groove configurations, are defined. In one example, the chamber includes an electrostatic chuck for receiving a substrate and a dielectric window connected to a top portion of the chamber, where the dielectric window disposed over the electrostatic chuck. Also included is a Faraday shield disposed inside of the chamber and defined between the electrostatic chuck and the dielectric window. The Faraday shield includes an inner zone having an inner radius range, a middle zone having a middle radius range, an outer zone having an outer radius range, where the inner zone is adjacent to the middle zone, and the middle zone being adjacent to the outer zone. Further defining the Faraday shield is a first set of radial slots (A) extending through the inner zone, the middle zone, and the outer zone, a second set of radial slots (C) extending through only the outer zone; and a third set of radial slots (B) extending through the middle zone and outer zone. In this configuration, the first, second and third radial slots are arranged radially around the Faraday shield in a repeating pattern of slots A, C, B, and C.

摘要翻译： 定义了具有限定凹槽结构的具有内部法拉第屏蔽的等离子体处理室。 在一个示例中，腔室包括用于接收衬底的静电吸盘和连接到室的顶部的介电窗口，其中介电窗设置在静电吸盘上方。 还包括设置在室内部并限定在静电卡盘和电介质窗口之间的法拉第屏蔽。 法拉第屏蔽包括具有内半径范围的内区域，具有中间半径范围的中间区域，具有外半径范围的外区域，其中内区域与中间区域相邻，中间区域邻近 外部区域 进一步限定法拉第屏蔽是延伸穿过内部区域，中间区域和外部区域的第一组径向狭槽（A），仅延伸穿过外部区域的第二组径向狭槽（C）; 以及延伸穿过中间区域和外部区域的第三组径向狭槽（B）。 在这种构造中，第一，第二和第三径向狭缝围绕法拉第屏蔽件以狭槽A，C，B和C的重复图案径向布置。

公开(公告)号：US09293353B2

公开(公告)日：2016-03-22

申请号：US13658652

申请日：2012-10-23

申请人： Maolin Long ,  Alex Paterson ,  Ricky Marsh ,  Ying Wu ,  John Drewery

发明人： Maolin Long ,  Alex Paterson ,  Ricky Marsh ,  Ying Wu ,  John Drewery

IPC分类号： C23C16/00 ,  H01L21/306 ,  H01L21/67 ,  H05K9/00 ,  H01J37/32

CPC分类号： H01L21/67069 ,  H01J37/32651 ,  H05K9/00

摘要： A Faraday shield and a plasma processing chamber incorporating the Faraday shield is are provided. The plasma chamber includes an electrostatic chuck for receiving a substrate, a dielectric window connected to a top portion of the chamber, the dielectric window disposed over the electrostatic chuck, and a Faraday shield. The Faraday shield is disposed inside of the chamber and defined between the electrostatic chuck and the dielectric window. The Faraday shield includes an inner zone having an inner radius range that includes a first and second plurality of slots and an outer zone having an outer radius range that includes a third plurality of slots. The inner zone is adjacent to the outer zone. The Faraday shield also includes a band ring separating the inner zone and the outer zone, such that the first and second plurality of slots do not connect with the third plurality of slots.

摘要翻译： 提供了法拉第屏蔽和包含法拉第屏蔽的等离子体处理室。 等离子体室包括用于接收基板的静电卡盘，连接到腔室的顶部的介电窗口，设置在静电卡盘上的电介质窗口和法拉第屏蔽件。 法拉第屏蔽设置在室内并限定在静电卡盘和电介质窗口之间。 法拉第屏蔽包括具有包括第一和第二多个狭槽的内半径范围的内区和具有包括第三多个槽的外半径范围的外区。 内部区域与外部区域相邻。 法拉第屏蔽还包括分隔内区和外区的带环，使得第一和第二多个槽不与第三多个槽连接。

公开(公告)号：US20120273130A1

公开(公告)日：2012-11-01

申请号：US13198683

申请日：2011-08-04

申请人： John Drewery ,  Maolin Long ,  Alex Paterson

发明人： John Drewery ,  Maolin Long ,  Alex Paterson

IPC分类号： H01L21/3065 ,  H05K9/00

CPC分类号： H01J37/32651 ,  H01J37/321 ,  H01J37/32633

摘要： Plasma processing chambers having internal Faraday shields with defined groove configurations, are defined. In one example, the chamber includes an electrostatic chuck for receiving a substrate and a dielectric window connected to a top portion of the chamber, where the dielectric window disposed over the electrostatic chuck. Also included is a Faraday shield disposed inside of the chamber and defined between the electrostatic chuck and the dielectric window. The Faraday shield includes an inner zone having an inner radius range, a middle zone having a middle radius range, an outer zone having an outer radius range, where the inner zone is adjacent to the middle zone, and the middle zone being adjacent to the outer zone. Further defining the Faraday shield is a first set of radial slots (A) extending through the inner zone, the middle zone, and the outer zone, a second set of radial slots (C) extending through only the outer zone; and a third set of radial slots (B) extending through the middle zone and outer zone. In this configuration, the first, second and third radial slots are arranged radially around the Faraday shield in a repeating pattern of slots A, C, B, and C.

摘要翻译： 定义了具有限定凹槽结构的具有内部法拉第屏蔽的等离子体处理室。 在一个示例中，腔室包括用于接收衬底的静电吸盘和连接到室的顶部的介电窗口，其中介电窗设置在静电吸盘上方。 还包括设置在室内部并限定在静电卡盘和电介质窗口之间的法拉第屏蔽。 法拉第屏蔽包括具有内半径范围的内区域，具有中间半径范围的中间区域，具有外半径范围的外区域，其中内区域与中间区域相邻，中间区域邻近 外部区域 进一步限定法拉第屏蔽是延伸穿过内部区域，中间区域和外部区域的第一组径向狭槽（A），仅延伸穿过外部区域的第二组径向狭槽（C）; 以及延伸穿过中间区域和外部区域的第三组径向狭槽（B）。 在这种构造中，第一，第二和第三径向狭缝围绕法拉第屏蔽件以狭槽A，C，B和C的重复图案径向布置。

公开(公告)号：US20130186568A1

公开(公告)日：2013-07-25

申请号：US13658652

申请日：2012-10-23

申请人： Maolin Long ,  Alex Paterson ,  Ricky Marsh ,  Ying Wu ,  John Drewery

发明人： Maolin Long ,  Alex Paterson ,  Ricky Marsh ,  Ying Wu ,  John Drewery

IPC分类号： H01L21/67 ,  H05K9/00

CPC分类号： H01L21/67069 ,  H01J37/32651 ,  H05K9/00

摘要： A Faraday shield and a plasma processing chamber incorporating the Faraday shield is are provided. The plasma chamber includes an electrostatic chuck for receiving a substrate, a dielectric window connected to a top portion of the chamber, the dielectric window disposed over the electrostatic chuck, and a Faraday shield. The Faraday shield is disposed inside of the chamber and defined between the electrostatic chuck and the dielectric window. The Faraday shield includes an inner zone having an inner radius range that includes a first and second plurality of slots and an outer zone having an outer radius range that includes a third plurality of slots. The inner zone is adjacent to the outer zone. The Faraday shield also includes a band ring separating the inner zone and the outer zone, such that the first and second plurality of slots do not connect with the third plurality of slots.

摘要翻译： 提供了法拉第屏蔽和包含法拉第屏蔽的等离子体处理室。 等离子体室包括用于接收基板的静电卡盘，连接到腔室的顶部的介电窗口，设置在静电卡盘上的电介质窗口和法拉第屏蔽件。 法拉第屏蔽设置在室内并限定在静电卡盘和电介质窗口之间。 法拉第屏蔽包括具有包括第一和第二多个狭槽的内半径范围的内区和具有包括第三多个槽的外半径范围的外区。 内部区域与外部区域相邻。 法拉第屏蔽还包括分隔内区和外区的带环，使得第一和第二多个槽不与第三多个槽连接。

公开(公告)号：US20120322270A1

公开(公告)日：2012-12-20

申请号：US13161372

申请日：2011-06-15

申请人： Maolin Long ,  Alex Paterson ,  Richard Marsh ,  Ying Wu

发明人： Maolin Long ,  Alex Paterson ,  Richard Marsh ,  Ying Wu

IPC分类号： H01L21/3065 ,  C23F1/08

CPC分类号： H01J37/32651 ,  H01J37/321 ,  H01J37/32697 ,  H01L21/6831

摘要： A plasma processing chamber and methods for operating the chamber are provided. An exemplary chamber includes an electrostatic chuck for receiving a substrate and a dielectric window connected to a top portion of the chamber. An inner side of dielectric window faces a plasma processing region that is above the electrostatic chuck and an outer side of the dielectric window is exterior to the plasma processing region. Inner and outer coils are disposed above the outer side of the dielectric window, and the inner and outer coils are connected to a first RF power source. A powered grid is disposed between the outer side of dielectric window and the inner and outer coils. The powered grid is connected to a second RF power source that is independent from the first RF power source.

摘要翻译： 提供等离子体处理室和操作室的方法。 示例性室包括用于接收基板的静电卡盘和连接到腔室顶部的电介质窗口。 电介质窗口的内侧面对位于静电卡盘上方的等离子体处理区域，并且电介质窗口的外侧在等离子体处理区域的外部。 内部和外部线圈设置在电介质窗口的外侧上方，内部和外部线圈连接到第一RF电源。 电力网格设置在电介质窗口的外侧和内部和外部线圈之间。 电网连接到独立于第一RF电源的第二RF电源。

公开(公告)号：US20130135058A1

公开(公告)日：2013-05-30

申请号：US13751001

申请日：2013-01-25

申请人： Maolin Long ,  Ricky Marsh ,  Alex Paterson

发明人： Maolin Long ,  Ricky Marsh ,  Alex Paterson

IPC分类号： H03H7/38

CPC分类号： H03H7/38 ,  H03H7/40

摘要： A match circuit includes the following: a power input circuit coupled to an RF source; an inner coil input circuit coupled between the power input circuit and an input terminal of an inner coil, the inner coil input circuit including an inductor and a capacitor coupled in series to the inductor, the inductor connecting to the power input circuit, and the capacitor connecting to the input terminal of the inner coil, a first node being defined between the power input circuit and the inner coil input circuit; an inner coil output circuit coupled between an output terminal of the inner coil and ground, the inner coil output circuit defining a direct pass-through connection to ground; an outer coil input circuit coupled between the first node and an input terminal of an outer coil; and an outer coil output circuit coupled between an output terminal of the outer coil and ground.

公开(公告)号：US09336996B2

公开(公告)日：2016-05-10

申请号：US13034332

申请日：2011-02-24

申请人： Maolin Long ,  Alex Paterson

发明人： Maolin Long ,  Alex Paterson

IPC分类号： H01L21/306 ,  C23C16/00 ,  H01J37/32 ,  H05H1/46

CPC分类号： H01J37/3211 ,  H01J37/321 ,  H01J37/32119 ,  H01J37/32165 ,  H01J37/32431 ,  H01J37/3244 ,  H01J37/32458 ,  H01J37/32513 ,  H01J37/32651 ,  H01J37/32715 ,  H01J2237/332 ,  H01J2237/334 ,  H05H1/46 ,  H05H2001/4652 ,  H05H2001/4667

摘要： A plasma processing system for generating plasma to process a wafer. The plasma processing system includes a set of top coils for initiating the plasma, a set of side coils for affecting distribution of the plasma, and a chamber structure for containing the plasma. The chamber structure includes a chamber wall and a dielectric member. The dielectric member includes a top, a vertical wall, and a flange. The top is connected through the vertical wall to the flange, and is connected through the vertical wall and the flange to the chamber wall. The set of top coils is disposed above the top. The set of side coils surrounds the vertical wall. A vertical inner surface of the vertical wall is configured to be exposed to the plasma. The inner diameter of the vertical wall is smaller than the inner diameter of the chamber wall.

摘要翻译： 一种用于产生等离子体以处理晶片的等离子体处理系统。 等离子体处理系统包括一组用于启动等离子体的顶部线圈，用于影响等离子体分布的一组侧线圈，以及用于容纳等离子体的室结构。 室结构包括室壁和电介质构件。 电介质构件包括顶部，垂直壁和凸缘。 顶部通过垂直壁连接到法兰上，并通过垂直壁和法兰连接到室壁。 顶部线圈组设置在顶部上方。 侧面线圈组围绕垂直壁。 垂直壁的垂直内表面被配置为暴露于等离子体。 垂直壁的内径小于室壁的内径。

公开(公告)号：US20120217222A1

公开(公告)日：2012-08-30

申请号：US13034332

申请日：2011-02-24

申请人： Maolin Long ,  Alex Paterson

发明人： Maolin Long ,  Alex Paterson

IPC分类号： C23F1/08 ,  C23F1/00 ,  C23C16/52 ,  C23C16/458 ,  C23C16/50

CPC分类号： H01J37/3211 ,  H01J37/321 ,  H01J37/32119 ,  H01J37/32165 ,  H01J37/32431 ,  H01J37/3244 ,  H01J37/32458 ,  H01J37/32513 ,  H01J37/32651 ,  H01J37/32715 ,  H01J2237/332 ,  H01J2237/334 ,  H05H1/46 ,  H05H2001/4652 ,  H05H2001/4667

摘要： A plasma processing system for generating plasma to process a wafer. The plasma processing system includes a set of top coils for initiating the plasma, a set of side coils for affecting distribution of the plasma, and a chamber structure for containing the plasma. The chamber structure includes a chamber wall and a dielectric member. The dielectric member includes a top, a vertical wall, and a flange. The top is connected through the vertical wall to the flange, and is connected through the vertical wall and the flange to the chamber wall. The set of top coils is disposed above the top. The set of side coils surrounds the vertical wall. A vertical inner surface of the vertical wall is configured to be exposed to the plasma. The inner diameter of the vertical wall is smaller than the inner diameter of the chamber wall.

摘要翻译： 一种用于产生等离子体以处理晶片的等离子体处理系统。 等离子体处理系统包括一组用于启动等离子体的顶部线圈，用于影响等离子体分布的一组侧线圈，以及用于容纳等离子体的室结构。 室结构包括室壁和电介质构件。 电介质构件包括顶部，垂直壁和凸缘。 顶部通过垂直壁连接到法兰上，并通过垂直壁和法兰连接到室壁。 顶部线圈组设置在顶部上方。 侧面线圈组围绕垂直壁。 垂直壁的垂直内表面被配置为暴露于等离子体。 垂直壁的内径小于室壁的内径。

公开(公告)号：US09966236B2

公开(公告)日：2018-05-08

申请号：US13161372

申请日：2011-06-15

申请人： Maolin Long ,  Alex Paterson ,  Richard Marsh ,  Ying Wu

发明人： Maolin Long ,  Alex Paterson ,  Richard Marsh ,  Ying Wu

IPC分类号： H01J37/32 ,  H01L21/683

CPC分类号： H01J37/32651 ,  H01J37/321 ,  H01J37/32697 ,  H01L21/6831

摘要： A plasma processing chamber and methods for operating the chamber are provided. An exemplary chamber includes an electrostatic chuck for receiving a substrate and a dielectric window connected to a top portion of the chamber. An inner side of dielectric window faces a plasma processing region that is above the electrostatic chuck and an outer side of the dielectric window is exterior to the plasma processing region. Inner and outer coils are disposed above the outer side of the dielectric window, and the inner and outer coils are connected to a first RF power source. A powered grid is disposed between the outer side of dielectric window and the inner and outer coils. The powered grid is connected to a second RF power source that is independent from the first RF power source.

公开(公告)号：US20130256271A1

公开(公告)日：2013-10-03

申请号：US13438824

申请日：2012-04-03

申请人： Theodoros Panagopoulos ,  John Holland ,  Alex Paterson

发明人： Theodoros Panagopoulos ,  John Holland ,  Alex Paterson

IPC分类号： H01L21/3065

CPC分类号： H01J37/321 ,  H01J37/3211

摘要： Methods and apparatus for controlling plasma in a plasma processing system having at least an inductively coupled plasma (ICP) processing chamber are disclosed. The ICP chamber employs at least a first/center RF coil, a second/edge RF coil disposed concentrically with respect to the first/center RF coil, and a RF coil set having at least a third/mid RF coil disposed concentrically with respect to the first/center RF coil and the second/edge RF coil in a manner such that the third/mid RF coil is disposed in between the first/center RF coil and the second/edge RF coil. During processing, RF currents in the same direction are provided to the first/center RF coil and the second/edge RF coil while RF current in the reverse direction (relative to the direction of the currents provided to the first/center RF coil and the second/edge RF coil) is provided to the third/mid RF coil.

摘要翻译： 公开了具有至少电感耦合等离子体（ICP）处理室的等离子体处理系统中用于控制等离子体的方法和装置。 ICP室采用至少第一/中心RF线圈，相对于第一/中心RF线圈同心设置的第二/边缘RF线圈，以及RF线圈组，其具有至少相对于 第一/中心RF线圈和第二/边缘RF线圈，使得第三/中频RF线圈设置在第一/中心RF线圈和第二/边缘RF线圈之间。 在处理期间，在相同方向上的RF电流被提供给第一/中心RF线圈和第二/边缘RF线圈，而RF电流在相反方向（相对于提供给第一/中心RF线圈的电流的方向和 第二/边缘RF线圈）提供给第三/中频RF线圈。