摘要:
An apparatus may include a first substrate, one or more microelectromechanical systems (MEMS) coupled to the first substrate, a second substrate coupled with the first substrate, and one or more passive components coupled to the second substrate. A method may include aligning a first substrate having one or more MEMS coupled thereto and a second substrate having one or more passive components coupled thereto, and coupling the aligned substrates.
摘要:
An apparatus may include a first substrate, one or more microelectromechanical systems (MEMS) coupled to the first substrate, a second substrate coupled with the first substrate, and one or more passive components coupled to the second substrate. A method may include aligning a first substrate having one or more MEMS coupled thereto and a second substrate having one or more passive components coupled thereto, and coupling the aligned substrates.
摘要:
A film bulk acoustic resonator filter may be formed with a plurality of interconnected series and shunt film bulk acoustic resonators formed on the same membrane. Each of the film bulk acoustic resonators may be formed from a common lower conductive layer which is defined to form the bottom electrode of each film bulk acoustic resonator. A common top conductive layer may be defined to form each top electrode of each film bulk acoustic resonator. A common piezoelectric film layer, that may or may not be patterned, forms a continuous or discontinuous film.
摘要:
Briefly, some demonstrative embodiments of the present invention include an interconnection device, e.g., a Systems In Package (SIP) device, or Systems In Chip (SIC) device, including one or more embedded vias. Some demonstrative embodiments of the invention include a process to produce the interconnection device. Other embodiments are described and claimed.
摘要:
A method is disclosed. The method includes fabricating microelectromechanical (MEMS) structures of a Seek and Scan Probe (SSP) memory device on a first wafer, and fabricating CMOS and memory medium components of the SSP memory device on a second wafer.
摘要:
An apparatus and method to provide a tapered electrode in an acoustic resonator. A piezoelectric (PZ) layer, such as Aluminum Nitride (AIN), is formed over a bottom electrode having a tapered end. A top electrode is positioned on the PZ layer. The tapered end of the bottom electrode creates a mild topography to the under layer of the PZ material to prevent cracking in the PZ layer. The tapered end also decreases acoustic losses in the acoustic resonator because the PZ grains are highly oriented. In one embodiment, the acoustic resonator is a film bulk acoustic resonator (FBAR).
摘要:
“An interconnection device comprises a Systems In Package (SIP) device, or Systems in Chip (SIC) device, including one or more embedded vias extending through a base substrate. A process to produce the interconnection device.”
摘要:
Briefly, embodiments of the present invention provide an electro-mechanical device, for example, a Micro-Electro-Mechanical Systems (MEMS) device, for example, a low-loss Film Bulk Acoustic Resonators (FBAR) filter, and a process to produce the same.
摘要:
A diaphragm includes a substrate having a hole and a sheet of material formed on the substrate and covering the hole. The sheet of material includes one or more corrugations that are substantially free of defects. A method of forming the diaphragm includes forming a corrugated surface free of stringers on the substrate, forming a layer of material on the corrugated surface, and processing the substrate to form the diaphragm including the layer of material.
摘要:
Briefly, embodiments of the present invention provide an electro-mechanical device, for example, a Micro-Electro-Mechanical Systems (MEMS) device, for example, a low-loss Film Bulk Acoustic Resonators (FBAR) filter, and a process to produce the same.