摘要:
A digital to analog converter (DAC) incorporates a novel subranging voltage output DAC that delivers high multiplying bandwidth while consuming low power and requires small silicon area. The higher order digital input bits (MSBS) select a voltage range (VMSB) from a first resistor divider DAC network. The VMSB is then applied to the input of a small high speed low power differential input single ended output LSB programmable attenuator amplifier. Transistor follower devices effectively buffer the MSB section to the LSB section and increase bandwidth and speed of operation as well as permitting multichannel sharing of a single precision MSB voltage divider network.
摘要:
A current driven span voltage source for use in an analog to digital converter includes a zero reference resistor serially connected with a resistor ladder. A first current source selectively passes a part of a first current through the resistor ladder to establish a span (gain) voltage range, and a second current source selectively passes a part of a second current through the zero reference resistor to establish a zero reference voltage for the span voltage range. The controlled current sources increase speed, reduce power and thermal noise, and improve temperature related performance as compared with voltage driven span and reference sources using operational amplifiers.
摘要:
A digital to analog converter employs an operational amplifier as an active summing device for summing a first analog voltage corresponding to most significant bits of a digital value and a second analog voltage corresponding to least significant bits of the digital value. In a multi-channel application, a single MSB DAC can be shared by all channels through first MUXs in each channel with each channel having an independent LSB DAC. Alternatively, a single LSB DAC can be shared by all channels through second MUXs in each channel. Gain of the voltage summing operational amplifier in each channel is determined by values of a resistor connecting the output of the LSB DAC to the inverting negative input of the operational amplifier and of a feedback resistor connecting the amplifier output to the inverting negative input.
摘要:
A method and corresponding structure for shielding a floating gate tunneling element. The method comprises disposing a floating gate over a gate oxide using standard CMOS processing in two active areas defined by first and second doped well regions formed in a substrate surrounded by field oxide, and forming a floating gate shield layer so as to enclose the floating gate. The floating gate includes a first floating gate portion over an active area in the first doped well region and a second floating gate portion over the active area in the second doped well region. The first floating gate portion is substantially smaller than the second floating gate portion so as to enable adequate voltage coupling for Fowler-Nordheim tunneling to occur between the first doped well region and the first floating gate portion. The direction of tunneling is determined by high voltage application to one of the doped well regions.
摘要:
A sigma delta converter system and method includes a multi bit quantizer circuit coupled to an output of the converter. A single bit analog-to-digital converter circuit is contained in a feedback path of the converter. The converter includes a feed forward path operable to multiply an input voltage by a feed forward coefficient having a value that is a function of a gain control input signal. The gain control input signal can have a value that is a function of the output of the multi bit quantizer.
摘要:
A sigma-delta converter may include a filter coupled to a first summation circuit and a second summation circuit. A multi bit quantizer may be coupled to the second summation circuit. A single bit digital-to-analog converter (DAC) may be included that defines a feedback path between the multi-bit quantizer and the first summation circuit. A feed-forward coefficient circuit defining a feed forward path between the first summation circuit and the second summation circuit may be included.
摘要:
A sigma delta converter system and method includes a multi bit quantizer circuit coupled to an output of the converter. A single bit analog-to-digital converter circuit is contained in a feedback path of the converter. The converter includes a feed forward path operable to multiply an input voltage by a feed forward coefficient having a value that is a function of a gain control input signal. The gain control input signal can have a value that is a function of the output of the multi bit quantizer.
摘要:
A sigma delta converter system and method includes a multi bit quantizer circuit coupled to an output of the converter. A single bit analog-to-digital converter circuit is contained in a feedback path of the converter. The converter includes a feed forward path operable to multiply an input voltage by a feed forward coefficient having a value that is a function of a gain control input signal. The gain control input signal can have a value that is a function of the output of the multi bit quantizer.
摘要:
A sigma-delta converter may include a filter coupled to a first summation circuit and a second summation circuit. A multi bit quantizer may be coupled to the second summation circuit. A single bit digital-to-analog converter (DAC) may be included that defines a feedback path between the multi-bit quantizer and the first summation circuit. A feed-forward coefficient circuit defining a feed forward path between the first summation circuit and the second summation circuit may be included.
摘要:
A method and corresponding structure for shielding a floating gate tunneling element. The method comprises disposing a floating gate over a gate oxide using standard CMOS processing in two active areas defined by first and second doped well regions formed in a substrate surrounded by field oxide, and forming a floating gate shield layer so as to enclose the floating gate. The floating gate includes a first floating gate portion over an active area in the first doped well region and a second floating gate portion over the active area in the second doped well region. The first floating gate portion is substantially smaller than the second floating gate portion so as to enable adequate voltage coupling for Fowler-Nordheim tunneling to occur between the first doped well region and the first floating gate portion. The direction of tunneling is determined by high voltage application to one of the doped well regions.