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    SYSTEM AND METHOD FOR IDENTIFYING BACKHAUL OPPORTUNITIES
    1.
    发明申请
    SYSTEM AND METHOD FOR IDENTIFYING BACKHAUL OPPORTUNITIES 审中-公开
    用于识别反动机会的系统和方法

    公开(公告)号：US20100179849A1

    公开(公告)日：2010-07-15

    申请号：US12568699

    申请日：2009-09-29

    申请人： Jonathan Steven Muckell ,  Patricia Denise Mackenzie ,  Daniel John Messier ,  Joseph James Salvo ,  Qing Cao

    发明人： Jonathan Steven Muckell ,  Patricia Denise Mackenzie ,  Daniel John Messier ,  Joseph James Salvo ,  Qing Cao

    IPC分类号： G06Q10/00 ,  G01S5/00

    CPC分类号： G06Q10/08 ,  G06Q10/0631

    摘要： A method for identifying backhaul opportunities is provided. The method includes receiving data corresponding to a position, time and status from a plurality of vehicles. The method includes generating a database of trips made by the plurality of vehicles based on the data received, wherein each of the trips is identified with a start point and an end point. The method also includes determining similarity between the trips to cluster the trips, wherein said determining comprises comparing a spatial distance between respective start points and respective end points with a pre-determined distance criteria. The method further includes identifying a frequency of each of the trips clustered made by the plurality of vehicles, wherein each of the trips are actual routes traveled between respective start points and respective end points. The method also includes generating a model for historical vehicle movement based on the identified frequent trips. The method also includes identifying a plurality of backhaul opportunities for a proposed empty trip using the model generated. The method further includes ranking the backhaul opportunities based on a frequency and cargo status of trips intersecting the proposed empty trip.

    摘要翻译： 提供了一种识别回程机会的方法。 该方法包括从多个车辆接收对应于位置，时间和状态的数据。 该方法包括基于接收到的数据生成由多个车辆进行的行驶数据库，其中每个行程用起始点和终点标识。 该方法还包括确定跳闸之间的相似性以聚集旅行，其中所述确定包括用预定的距离标准来比较各个起始点和各个终点之间的空间距离。 该方法还包括识别由多个车辆组成的每个行程的频率，其中每个行程是在相应起始点和相应终点之间行进的实际路线。 该方法还包括基于所识别的频繁跳闸来生成用于历史车辆运动的模型。 该方法还包括使用生成的模型识别所提出的空行程的多个回程机会。 该方法还包括基于与所提出的空旅行相交的行程的频率和货物状态对回程机会进行排序。

    SYSTEM AND METHOD FOR DISTANCE ESTIMATION
    3.
    发明申请
    SYSTEM AND METHOD FOR DISTANCE ESTIMATION 审中-公开
    用于距离估计的系统和方法

    公开(公告)号：US20100262366A1

    公开(公告)日：2010-10-14

    申请号：US12568692

    申请日：2009-09-29

    申请人： Qing Cao ,  Patricia Denise Mackenzie ,  Joseph James Salvo ,  Judith Ann Serth-Guzzo ,  Bouchra Bouqata ,  Joseph Edward Jesson ,  Robert August Graziano, JR.

    发明人： Qing Cao ,  Patricia Denise Mackenzie ,  Joseph James Salvo ,  Judith Ann Serth-Guzzo ,  Bouchra Bouqata ,  Joseph Edward Jesson ,  Robert August Graziano, JR.

    IPC分类号： G01C21/34 ,  G08G1/123

    CPC分类号： G08G1/20 ,  G06Q10/047

    摘要： A mileage estimation system comprising a data collection module, a route determination module, a learning module, and a mileage calculation module is provided. The data collection module receives data corresponding to a position and time of a moving asset from a remote location and the route determination module obtains information from a map database for determining a plurality of routes between at least two location of the moving asset. The learning module in the system determines a route travelled by the moving asset from the plurality of routes based on mileage estimation criterion, and the mileage calculation module estimates the distance travelled by the moving asset based on the route travelled by the moving asset.

    摘要翻译： 提供了一种包括数据采集模块，路线确定模块，学习模块和里程计算模块的里程估计系统。 数据收集模块从远程位置接收与移动资产的位置和时间对应的数据，并且路线确定模块从地图数据库获取用于确定移动资产的至少两个位置之间的多条路线的信息。 系统中的学习模块基于里程估计准则确定由多条路线移动资产行驶的路线，里程计算模块根据移动资产所行驶的路线估计移动资产行驶的距离。

    DOUBLE CONTACTS FOR CARBON NANOTUBES THIN FILM DEVICES
    6.
    发明申请
    DOUBLE CONTACTS FOR CARBON NANOTUBES THIN FILM DEVICES 有权
    碳纳米管薄膜设备的双重联系

    公开(公告)号：US20140042392A1

    公开(公告)日：2014-02-13

    申请号：US13585465

    申请日：2012-08-14

    申请人： Qing Cao ,  Aaron D. Franklin ,  Joshua T. Smith

    发明人： Qing Cao ,  Aaron D. Franklin ,  Joshua T. Smith

    IPC分类号： H01L29/775 ,  B82Y99/00

    CPC分类号： H01L51/0048 ,  B82Y10/00 ,  H01L51/0558 ,  H01L51/0562

    摘要： A method of fabricating a semiconductor device is disclosed. A first contact layer of the semiconductor device is fabricated. An electrical connection is formed between a carbon nanotube and the first contact layer by electrically coupling of the carbon nanotube and a second contact layer. The first contact layer and second contact layer may be electrically coupled.

    摘要翻译： 公开了制造半导体器件的方法。 制造半导体器件的第一接触层。 通过碳纳米管和第二接触层的电耦合，在碳纳米管和第一接触层之间形成电连接。 第一接触层和第二接触层可以电耦合。

    Double contacts for carbon nanotubes thin film devices
    8.
    发明授权
    Double contacts for carbon nanotubes thin film devices 有权
    碳纳米管薄膜器件的双触点

    公开(公告)号：US08754393B2

    公开(公告)日：2014-06-17

    申请号：US13585465

    申请日：2012-08-14

    申请人： Qing Cao ,  Aaron D. Franklin ,  Joshua T. Smith

    发明人： Qing Cao ,  Aaron D. Franklin ,  Joshua T. Smith

    IPC分类号： H01L47/00

    CPC分类号： H01L51/0048 ,  B82Y10/00 ,  H01L51/0558 ,  H01L51/0562

    摘要： A method of fabricating a semiconductor device is disclosed. A first contact layer of the semiconductor device is fabricated. An electrical connection is formed between a carbon nanotube and the first contact layer by electrically coupling of the carbon nanotube and a second contact layer. The first contact layer and second contact layer may be electrically coupled.

    摘要翻译： 公开了制造半导体器件的方法。 制造半导体器件的第一接触层。 通过碳纳米管和第二接触层的电耦合，在碳纳米管和第一接触层之间形成电连接。 第一接触层和第二接触层可以电耦合。

    NIOBIUM THIN FILM STRESS RELIEVING LAYER FOR THIN-FILM SOLAR CELLS
    9.
    发明申请
    NIOBIUM THIN FILM STRESS RELIEVING LAYER FOR THIN-FILM SOLAR CELLS 有权
    用于薄膜太阳能电池的氮化硅薄膜应力层

    公开(公告)号：US20140000712A1

    公开(公告)日：2014-01-02

    申请号：US13534519

    申请日：2012-06-27

    申请人： Qing Cao ,  Zhengwen Li ,  Fei Liu ,  Zhen Zhang

    发明人： Qing Cao ,  Zhengwen Li ,  Fei Liu ,  Zhen Zhang

    IPC分类号： H01L31/0264 ,  H01L31/18

    CPC分类号： H01L31/02167 ,  H01L31/022425 ,  H01L31/022441 ,  H01L31/022475 ,  H01L31/0296 ,  H01L31/0322 ,  H01L31/0326 ,  H01L31/0749 ,  Y02E10/541 ,  Y02P70/521

    摘要： A method of forming a photovoltaic device includes forming a thermal stress relieving layer on top of a substrate and forming a sacrificial back electrode metal layer on the thermal stress relieving layer. A semiconductor photon absorber layer is formed on the sacrificial back electrode metal layer, and the absorber layer is reacted with substantially an entire thickness of the sacrificial back electrode metal layer, thereby forming a back ohmic contact comprising a metallic compound of the sacrificial back electrode metal layer and the absorber layer, in combination with the thermal stress relieving layer.

    摘要翻译： 形成光伏器件的方法包括在衬底的顶部形成热应力消除层，并在热应力消除层上形成牺牲背电极金属层。 在牺牲背电极金属层上形成半导体光子吸收层，吸收层与牺牲背极金属层的大致整个厚度反应，形成包含牺牲背电极金属的金属化合物的反欧姆接触 层和吸收层，与热应力消除层组合。

    Niobium thin film stress relieving layer for thin-film solar cells
    10.
    发明授权
    Niobium thin film stress relieving layer for thin-film solar cells 有权
    薄膜太阳能电池铌薄膜应力消除层

    公开(公告)号：US08822816B2

    公开(公告)日：2014-09-02

    申请号：US13534519

    申请日：2012-06-27

    申请人： Qing Cao ,  Zhengwen Li ,  Fei Liu ,  Zhen Zhang

    发明人： Qing Cao ,  Zhengwen Li ,  Fei Liu ,  Zhen Zhang

    IPC分类号： H01L31/0264 ,  H01L31/18

    CPC分类号： H01L31/02167 ,  H01L31/022425 ,  H01L31/022441 ,  H01L31/022475 ,  H01L31/0296 ,  H01L31/0322 ,  H01L31/0326 ,  H01L31/0749 ,  Y02E10/541 ,  Y02P70/521

    摘要： A method of forming a photovoltaic device includes forming a thermal stress relieving layer on top of a substrate and forming a sacrificial back electrode metal layer on the thermal stress relieving layer. A semiconductor photon absorber layer is formed on the sacrificial back electrode metal layer, and the absorber layer is reacted with substantially an entire thickness of the sacrificial back electrode metal layer, thereby forming a back ohmic contact comprising a metallic compound of the sacrificial back electrode metal layer and the absorber layer, in combination with the thermal stress relieving layer.

    摘要翻译： 形成光伏器件的方法包括在衬底的顶部形成热应力消除层，并在热应力消除层上形成牺牲背电极金属层。 在牺牲背电极金属层上形成半导体光子吸收层，吸收层与牺牲背极金属层的大致整个厚度反应，形成包含牺牲背电极金属的金属化合物的反欧姆接触 层和吸收层，与热应力消除层组合。