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公开(公告)号：US08958232B2
公开(公告)日：2015-02-17
申请号：US13437081
申请日：2012-04-02
IPC分类号： G11C17/00
CPC分类号： G11C7/12 , G11C7/067 , G11C11/412 , G11C11/419
摘要： A memory assist apparatus includes a detection circuit and a compensation circuit. The detection circuit is configured to provide a detection signal indicating whether a bit line configured to provide read access to a data bit stored at a memory bit cell has a voltage below a predetermined threshold. The compensation circuit is configured to pull down the voltage of the bit line if the detection signal indicates that the voltage of the bit line is below the predetermined threshold.
摘要翻译： 记忆辅助装置包括检测电路和补偿电路。 检测电路被配置为提供一个检测信号，该检测信号指示被配置为对存储在存储位单元中的数据位提供读取访问的位线是否具有低于预定阈值的电压。 如果检测信号指示位线的电压低于预定阈值，则补偿电路被配置为下拉位线的电压。
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公开(公告)号：US20080229161A1
公开(公告)日：2008-09-18
申请号：US11686996
申请日：2007-03-16
申请人： Cheng-Hung Lee , Ching-Wei Wu , Chung-Cheng Chou , Hung-Jen Liao
发明人： Cheng-Hung Lee , Ching-Wei Wu , Chung-Cheng Chou , Hung-Jen Liao
IPC分类号： G11C29/00
CPC分类号： G11C29/50 , G11C29/70 , G11C29/80 , G11C2029/5004 , H01L22/22 , H01L27/1052
摘要： Memory products and manufacturing methods thereof. A memory product comprises at least one memory cell and at least one redundancy memory cell. The memory cell and the redundancy memory cell have different physical or electronic properties. The redundancy memory cells are used as repair schemes for the memory cell if the memory cell is determined to have experienced Vccmin failure.
摘要翻译： 内存产品及其制造方法。 存储器产品包括至少一个存储器单元和至少一个冗余存储单元。 存储单元和冗余存储单元具有不同的物理或电子特性。 如果确定存储器单元已经经历Vccmin故障，则冗余存储器单元被用作存储器单元的修复方案。
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公开(公告)号：US09064550B2
公开(公告)日：2015-06-23
申请号：US13279375
申请日：2011-10-24
IPC分类号： G11C11/00 , G11C8/08 , G11C11/418
CPC分类号： G11C8/08 , G11C11/418
摘要： A memory access operation on a bit cell of a digital memory, e.g., a static random access memory (SRAM), is assisted by reducing the word line control voltage for reading and boosting it for writing, thus improving data integrity. The bit cell has cross coupled inverters for storing and retrieving a logic state via bit line connections through a passing gate transistor controlled by the word line. A level of a word line signal controlling the passing gate transistor is shifted from a first voltage value to a higher second voltage value to begin a memory access cycle. The level of the word line signal is shifted from the second voltage value to a third voltage value less than the second voltage value during the access cycle. The word line signal is maintained at the third voltage value for a time interval during the access cycle.
摘要翻译： 数字存储器的位单元（例如静态随机存取存储器（SRAM））上的存储器访问操作通过减少字线控制电压来进行辅助，用于读取和提升其用于写入，从而提高数据完整性。 位单元具有交叉耦合的反相器，用于经由位线连接通过由字线控制的通过栅极晶体管来存储和取回逻辑状态。 控制通过栅极晶体管的字线信号的电平从第一电压值移位到较高的第二电压值，以开始存储器访问周期。 在访问周期期间，字线信号的电平从第二电压值移位到小于第二电压值的第三电压值。 在访问周期期间，字线信号保持在第三电压值一段时间间隔。
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4.发明授权Fly-over conductor segments in integrated circuits with successive load devices along a signal path 有权集成电路中的飞越导体段，沿着信号路径连续的负载装置公开(公告)号：US09025356B2
公开(公告)日：2015-05-05
申请号：US13221081
申请日：2011-08-30
IPC分类号： G11C5/06 , G11C7/10 , G11C11/00 , G11C11/413
CPC分类号： G11C5/063 , G11C11/413 , Y10T307/445
摘要： The propagation delay of a signal through multiple load devices coupled sequentially along a conductor is improved by separating a subset of the load devices that is more distant from the signal source, and coupling the more distant subset to the signal through a fly-over conductor that bypasses the subset that is nearer to the signal source. The technique is applicable to subsets of bit cells in a random access memory (SRAM) coupled to a given word line, or to word line decoder gates coupled sequentially to a strobe signal, as well as other circuits wherein load devices selectable as a group can be divided into subsets by proximity to the signal source. In an SRAM layout with multiple levels, different metal deposition layers carry the conductor legs between the load devices versus the fly-over conductor bypassing the nearer subset.
摘要翻译： 通过分离距离信号源更远的负载装置的子集，并通过飞越导体将更远的子集耦合到信号，改善了通过沿导体顺序耦合的多个负载装置的信号的传播延迟， 绕过更靠近信号源的子集。 该技术适用于耦合到给定字线的随机存取存储器（SRAM）中的位单元的子集，或者适用于顺序耦合到选通信号的字线解码器门，以及其他可选择作为一组的负载装置的电路 通过靠近信号源将其划分为子集。 在具有多个级别的SRAM布局中，不同的金属沉积层承载负载装置之间的导体腿与绕过更近的子集的飞越导体。
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公开(公告)号：US20120307574A1
公开(公告)日：2012-12-06
申请号：US13149611
申请日：2011-05-31
IPC分类号： G11C7/00
CPC分类号： G11C11/419
摘要： A SRAM READ and WRITE assist apparatus comprises a bit line voltage tracking block, a READ assist timer, a READ assist unit, a WRITE assist unit a WRITE control unit. The bit line voltage tracking block detects a voltage on a tracking bit line coupled to a plurality of tracking memory cells. In response to the voltage drop on the tracking bit line, the READ assist timer generates a READ assist pulse. When the READ assist pulse has a logic high state, an activated word line is pulled down to a lower voltage. Such a lower voltage helps to improve the robustness of SRAM memory circuits so as to avoid READ and WRITE failures.
摘要翻译： SRAM读写辅助装置包括位线电压跟踪块，READ辅助定时器，READ辅助单元，WRITE辅助单元，WRITE控制单元。 位线电压跟踪块检测耦合到多个跟踪存储器单元的跟踪位线上的电压。 响应于跟踪位线上的电压降，READ辅助定时器产生READ辅助脉冲。 当READ辅助脉冲具有逻辑高电平状态时，激活的字线被下拉到较低的电压。 这样较低的电压有助于提高SRAM存储器电路的鲁棒性，以避免读取和写入故障。
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公开(公告)号：US08630132B2
公开(公告)日：2014-01-14
申请号：US13149611
申请日：2011-05-31
IPC分类号： G11C7/22
CPC分类号： G11C11/419
摘要： A SRAM READ and WRITE assist apparatus comprises a bit line voltage tracking block, a READ assist timer, a READ assist unit, a WRITE assist unit a WRITE control unit. The bit line voltage tracking block detects a voltage on a tracking bit line coupled to a plurality of tracking memory cells. In response to the voltage drop on the tracking bit line, the READ assist timer generates a READ assist pulse. When the READ assist pulse has a logic high state, an activated word line is pulled down to a lower voltage. Such a lower voltage helps to improve the robustness of SRAM memory circuits so as to avoid READ and WRITE failures.
摘要翻译： SRAM读写辅助装置包括位线电压跟踪块，READ辅助定时器，READ辅助单元，WRITE辅助单元，WRITE控制单元。 位线电压跟踪块检测耦合到多个跟踪存储器单元的跟踪位线上的电压。 响应于跟踪位线上的电压降，READ辅助定时器产生READ辅助脉冲。 当READ辅助脉冲具有逻辑高电平状态时，激活的字线被下拉到较低的电压。 这样较低的电压有助于提高SRAM存储器电路的鲁棒性，以避免读取和写入故障。
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7.发明申请FLY-OVER CONDUCTOR SEGMENTS IN INTEGRATED CIRCUITS WITH SUCCESSIVE LOAD DEVICES ALONG A SIGNAL PATH 有权集成电路中的FLY-OVER导体部分与信号路径中的连续负载设备公开(公告)号：US20130051128A1
公开(公告)日：2013-02-28
申请号：US13221081
申请日：2011-08-30
CPC分类号： G11C5/063 , G11C11/413 , Y10T307/445
摘要： The propagation delay of a signal through multiple load devices coupled sequentially along a conductor is improved by separating a subset of the load devices that is more distant from the signal source, and coupling the more distant subset to the signal through a fly-over conductor that bypasses the subset that is nearer to the signal source. The technique is applicable to subsets of bit cells in a random access memory (SRAM) coupled to a given word line, or to word line decoder gates coupled sequentially to a strobe signal, as well as other circuits wherein load devices selectable as a group can be divided into subsets by proximity to the signal source. In an SRAM layout with multiple levels, different metal deposition layers carry the conductor legs between the load devices versus the fly-over conductor bypassing the nearer subset.
摘要翻译： 通过分离距离信号源更远的负载装置的子集，并通过飞越导体将更远的子集耦合到信号，改善了通过沿导体顺序耦合的多个负载装置的信号的传播延迟， 绕过更靠近信号源的子集。 该技术适用于耦合到给定字线的随机存取存储器（SRAM）中的位单元的子集，或者适用于顺序耦合到选通信号的字线解码器门，以及其他可选择作为一组的负载装置的电路 通过靠近信号源将其划分为子集。 在具有多个级别的SRAM布局中，不同的金属沉积层承载负载装置之间的导体腿与绕过更近的子集的飞越导体。
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公开(公告)号：US07913215B2
公开(公告)日：2011-03-22
申请号：US11493405
申请日：2006-07-26
申请人： Chung-Cheng Chou , Cheng-Hung Lee
发明人： Chung-Cheng Chou , Cheng-Hung Lee
IPC分类号： G06F17/50
CPC分类号： G06F17/5045 , G06F17/5068
摘要： A memory macro includes a first set of cells disposed in a first area of a memory array, and a second set of cells, which differ from the first set of cells in physical dimensions, disposed at an edge of the first area for improving robustness of the cells at the edge of the memory array.
摘要翻译： 存储器宏包括设置在存储器阵列的第一区域中的第一组单元，以及设置在第一区域的边缘处的与物理尺寸的第一组单元不同的第二组单元，用于改善第一区域的鲁棒性 存储器阵列边缘的单元格。
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公开(公告)号：US20080028351A1
公开(公告)日：2008-01-31
申请号：US11493405
申请日：2006-07-26
申请人： Chung-Cheng Chou , Cheng-Hung Lee
发明人： Chung-Cheng Chou , Cheng-Hung Lee
IPC分类号： G06F17/50
CPC分类号： G06F17/5045 , G06F17/5068
摘要： A memory macro includes a first set of cells disposed in a first area of a memory array, and a second set of cells, which differ from the first set of cells in physical dimensions, disposed at an edge of the first area for improving robustness of the cells at the edge of the memory array.
摘要翻译： 存储器宏包括设置在存储器阵列的第一区域中的第一组单元，以及设置在第一区域的边缘处的与物理尺寸的第一组单元不同的第二组单元，用于改善第一区域的鲁棒性 存储器阵列边缘的单元格。
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公开(公告)号：US08724420B2
公开(公告)日：2014-05-13
申请号：US13105382
申请日：2011-05-11
IPC分类号： G11C11/413
CPC分类号： G11C11/419 , G11C11/41 , G11C29/021 , G11C29/023 , G11C29/028
摘要： An SRAM write assist apparatus comprises a timer unit and a voltage divider. The voltage divider unit is configured to divide a voltage potential down to a lower level. The output of the voltage divider is connected to a memory cell in a write operation. The timer unit is configured to generate a pulse having a width inversely proportional to the voltage potential applied to a memory chip. Furthermore, the timer unit controls the period in which a lower voltage from the output of the voltage divider is applied to the memory cell. Moreover, external level and timing programmable signals can be used to further adjust the voltage divider's ratio and the pulse width from the timer unit. By employing the SRAM write assist apparatus, a memory chip can perform a reliable and fast write operation.
摘要翻译： SRAM写入辅助装置包括定时器单元和分压器。 分压器单元被配置为将电压电位分压到较低电平。 在写入操作中，分压器的输出连接到存储单元。 定时器单元被配置为产生具有与施加到存储芯片的电压电位成反比的宽度的脉冲。 此外，定时器单元控制将来自分压器的输出的较低电压施加到存储单元的周期。 此外，可以使用外部电平和定时可编程信号来进一步调整分压器的比例和来自定时器单元的脉冲宽度。 通过采用SRAM写入辅助装置，存储器芯片可以执行可靠且快速的写入操作。
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