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14 条记录 (耗时 0.016 秒)

    Display device having high brightness uniformity at positions close to light source
    3.
    发明授权
    Display device having high brightness uniformity at positions close to light source 有权
    在靠近光源的位置具有高亮度均匀性的显示装置

    公开(公告)号：US08162501B2

    公开(公告)日：2012-04-24

    申请号：US12320996

    申请日：2009-02-10

    申请人： Jae Heon Noh ,  Jong Il Kim ,  Dong Seob Jang ,  Seong Ho Youn

    发明人： Jae Heon Noh ,  Jong Il Kim ,  Dong Seob Jang ,  Seong Ho Youn

    IPC分类号： G02F1/13357 ,  F21V5/00

    CPC分类号： G02F1/133606 ,  G02F1/133611 ,  G02F2001/133607

    摘要： A display device including a plurality of light sources spaced apart from one another, a refracting plate disposed over the plurality of light sources, and first and second refracting surfaces formed at both surfaces of the refracting plate to allow light emitted from the light sources to be scattered plural times by passing through the refracting plate, the first and second refracting surfaces having different shapes from each other. With the display device, light emitted from the light sources can be uniformly diffused, whereby high brightness uniformity can be accomplished even at positions relatively close to the light source, resulting in a reduction in a thickness of the display device.

    摘要翻译： 一种显示装置，包括彼此间隔开的多个光源，设置在所述多个光源上的折射板，以及形成在所述折射板的两个表面处的第一和第二折射面，以允许从所述光源发射的光为 通过折射板多次散射，第一和第二折射面彼此具有不同的形状。 利用显示装置，从光源发射的光可以均匀地扩散，从而即使在相对靠近光源的位置也可以实现高亮度均匀性，导致显示装置的厚度减小。

    Measuring pattern for measuring width of wire in semiconductor device
    4.
    发明授权
    Measuring pattern for measuring width of wire in semiconductor device 失效
    用于测量半导体器件中导线宽度的测量图案

    公开(公告)号：US06462565B1

    公开(公告)日：2002-10-08

    申请号：US09644992

    申请日：2000-08-24

    申请人： Kil Ho Kim ,  Kang Sup Shin ,  Jong Il Kim

    发明人： Kil Ho Kim ,  Kang Sup Shin ,  Jong Il Kim

    IPC分类号： G01R2714

    CPC分类号： G01B7/02

    摘要： In order to measure a width of a wire a measuring pattern for the width of the wire is prepared. The measuring pattern includes: a first pattern with a first width; a second pattern connected to the first pattern and having a second width wider than the first width; and a third pattern connected to the second pattern and having a third width narrower than the first width. The first pattern, the second pattern and the third pattern are made of same material. The first pattern through a power source is connected to the third pattern. A first pair of probes are disposed on the first pattern and then are connected to a first voltmeter. A distance between the first pair of probes is a first distance wider than the first width. A second pair of probes are disposed on the second pattern and then are connected to a second voltmeter. A distance between the second pair of probes is a second distance wider than the first width. Thereafter the first width using gauged voltage at the first voltmeter and the second voltmeter is determined. The second width is more substantially ten times the first width and the third width is such narrow that current therethrough is uniform.

    摘要翻译： 为了测量线的宽度，准备线的宽度的测量图案。 测量图案包括：具有第一宽度的第一图案; 连接到第一图案并且具有比第一宽度宽的第二宽度的第二图案; 以及连接到第二图案并且具有比第一宽度窄的第三宽度的第三图案。 第一图案，第二图案和第三图案由相同的材料制成。 通过电源的第一模式连接到第三模式。 第一对探针设置在第一图案上，然后连接到第一电压表。 第一对探针之间的距离是比第一宽度宽的第一距离。 第二对探针设置在第二图案上，然后连接到第二电压表。 第二对探针之间的距离是比第一宽度宽的第二距离。 此后，确定在第一电压表和第二电压表下使用测量电压的第一宽度。 第二宽度基本上是第一宽度的十倍，并且第三宽度使得通过其中的电流是均匀的。

    Thin film transistor device, liquid crystal display device using the same, and method of fabricating the same
    5.
    发明授权
    Thin film transistor device, liquid crystal display device using the same, and method of fabricating the same 有权
    薄膜晶体管器件，使用其的液晶显示器件及其制造方法

    公开(公告)号：US08081266B2

    公开(公告)日：2011-12-20

    申请号：US12318959

    申请日：2009-01-13

    申请人： Jong Il Kim ,  Seung Hee Nam ,  Jae Young Oh

    发明人： Jong Il Kim ,  Seung Hee Nam ,  Jae Young Oh

    IPC分类号： G02F1/136

    CPC分类号： G02F1/1368 ,  G02F1/133305 ,  G02F2001/136231 ,  H01L27/1214 ,  H01L27/124

    摘要： A liquid crystal display device includes a data line, a source electrode, a drain electrode, and a pixel electrode disposed on a lower substrate, an island-shaped semiconductor layer overlapping the source and drain electrodes, a gate insulating layer along an entire surface of the lower substrate including the semiconductor layer, a gate line and a gate electrode on the gate insulating layer, a passivation layer along an entire surface of the lower substrate including the gate line, an upper substrate facing the lower substrate, and a liquid crystal layer between the lower and upper substrates.

    摘要翻译： 液晶显示装置包括数据线，源电极，漏电极和设置在下基板上的像素电极，与源极和漏极重叠的岛状半导体层，沿着整个表面的栅绝缘层 包括半导体层的下基板，栅绝缘层上的栅极线和栅极电极，沿着包括栅极线的下基板的整个表面的钝化层，面向下基板的上基板和液晶层 在下基板和上基板之间。

    Method for measuring width of wire in semiconductor device using measuring-pattern
    6.
    发明授权
    Method for measuring width of wire in semiconductor device using measuring-pattern 失效
    使用测量图案测量半导体器件中导线宽度的方法

    公开(公告)号：US6127197A

    公开(公告)日：2000-10-03

    申请号：US104716

    申请日：1998-06-25

    申请人： Kil Ho Kim ,  Kang Sup Shin ,  Jong Il Kim

    发明人： Kil Ho Kim ,  Kang Sup Shin ,  Jong Il Kim

    IPC分类号： G01B7/02 ,  G01B21/02 ,  H01L21/66

    CPC分类号： G01B7/02

    摘要： In order to measure a width of a wire a measuring pattern for the width of the wire is prepared. The measuring pattern includes: a first pattern with a first width; a second pattern connected to the first pattern and having a second width wider than the first width; and a third pattern connected to the second pattern and having a third width narrower than the first width. The first pattern, the second pattern and the third pattern are made of same material. The first pattern through a power source is connected to the third pattern. A first pair of probes are disposed on the first pattern and then are connected to a first voltmeter. A distance between the first pair of probes is a first distance wider than the first width. A second pair of probes are disposed on the second pattern and then are connected to a second voltmeter. A distance between the second pair of probes is a second distance wider than the first width. Thereafter the first width using gauged voltage at the first voltmeter and the second voltmeter is determined. The second width is more substantially ten times the first width and the third width is such narrow that current therethrough is uniform.

    摘要翻译： 为了测量线的宽度，准备线的宽度的测量图案。 测量图案包括：具有第一宽度的第一图案; 连接到第一图案并且具有比第一宽度宽的第二宽度的第二图案; 以及连接到第二图案并且具有比第一宽度窄的第三宽度的第三图案。 第一图案，第二图案和第三图案由相同的材料制成。 通过电源的第一模式连接到第三模式。 第一对探针设置在第一图案上，然后连接到第一电压表。 第一对探针之间的距离是比第一宽度宽的第一距离。 第二对探针设置在第二图案上，然后连接到第二电压表。 第二对探针之间的距离是比第一宽度宽的第二距离。 此后，确定在第一电压表和第二电压表下使用测量电压的第一宽度。 第二宽度基本上是第一宽度的十倍，并且第三宽度使得通过其中的电流是均匀的。

    Door Lock
    8.
    发明申请
    Door Lock 审中-公开
    门锁

    公开(公告)号：US20080314096A1

    公开(公告)日：2008-12-25

    申请号：US11573798

    申请日：2005-08-17

    申请人： Jong Il Kim

    发明人： Jong Il Kim

    IPC分类号： E05B65/00

    CPC分类号： E05C1/14 ,  E05B63/0065 ,  E05C1/16 ,  Y10T70/5155

    摘要： A door lock is provided, which can open and close the door by pushing or pulling a handle of the door lock as well as by rotating the handle, to thereby make users use the door lock conveniently. The door lock includes: inner and outer flanges; a sleeve; inner and outer handles; an operating cam; a spring; and a holder, wherein the operating cam includes an operating groove formed in any one side of the operating cam and predetermined slanted planes formed at both sides thereof, wherein the rotating unit operates by the slanted planes during manipulation of the rotation, and wherein the rotating unit operates by the end of the operating groove during manipulation of the linear movement.

    摘要翻译： 提供一种门锁，其可以通过推动或拉动门锁的手柄以及旋转手柄来打开和关闭门，从而使用户方便地使用门锁。 门锁包括：内外法兰; 袖子 内外手柄; 操作凸轮; 一个春天 以及保持器，其中所述操作凸轮包括形成在所述操作凸轮的任一侧的操作槽和形成在其两侧的预定倾斜平面，其中所述旋转单元在旋转操作期间由所述倾斜平面操作，并且其中所述旋转 单元在操作线性运动期间由操作槽的末端进行操作。

    Transistor of semiconductor device and method of manufacturing the same
    9.
    发明授权
    Transistor of semiconductor device and method of manufacturing the same 有权
    半导体器件的晶体管及其制造方法

    公开(公告)号：US06632717B2

    公开(公告)日：2003-10-14

    申请号：US10141171

    申请日：2002-05-09

    申请人： Kil Ho Kim ,  Jong Il Kim

    发明人： Kil Ho Kim ,  Jong Il Kim

    IPC分类号： H01L21334

    CPC分类号： H01L29/6659 ,  H01L21/28114

    摘要： The present invention relates to a transistor of a semiconductor and a method of fabricating the same. In the method, the dual gate electrode may have different widths and is formed using a damascene process. The dual gate electrode is formed using a stacked upper having a first gate electrode and a second gate electrode. The second gate electrode may have a broader width than the lower first gate electrode.

    摘要翻译： 半导体晶体管及其制造方法技术领域本发明涉及半导体晶体管及其制造方法。 在该方法中，双栅电极可以具有不同的宽度并且使用镶嵌工艺形成。 双栅电极使用具有第一栅电极和第二栅电极的堆叠的上部形成。 第二栅电极可以具有比下第一栅电极宽的宽度

    Safe outlet
    10.
    发明授权
    Safe outlet 有权
    安全出口

    公开(公告)号：US09196996B2

    公开(公告)日：2015-11-24

    申请号：US14510319

    申请日：2014-10-09

    申请人： Jong Il Kim ,  Kyoung Tae Kim

    发明人： Jong Il Kim ,  Kyoung Tae Kim

    IPC分类号： H01R13/44 ,  H01R13/453 ,  H01R25/00

    CPC分类号： H01R13/4532 ,  H01R25/003

    摘要： Provided in a safe outlet further including a rotary type locking body in which the rotary type locking body falls down when a plug is not plugged into the outlet, to thereby make outlet terminals not opened, to thus prevent an electric shock accident in advance, and to thereby entirely block foreign substances such as dust from entering an earth terminal hole.

    摘要翻译： 在安全插座上设有安全插座，还包括旋转式锁定体，当插头未插入插座时旋转型锁定体在其中下降，从而使插座端子未打开，从而防止事先触电事故; 从而完全阻止灰尘等异物进入接地端子孔。