Abstract:
A test system and a failure parsing method. The test system may comprise a cell array including defective cells formed according to various failure causes, a test apparatus configured to measure electric characteristics from the defective cells and make the measured electric characteristics numerical, and a database apparatus configured to store the numerical electric characteristics. The failure parsing method may include forming defective cells to have at least one failure cause, measuring electric characteristics of each of the defective cells, storing the measured electric characteristics of each of the defective cells in a database, and judging failure causes of a failed chip of a semiconductor wafer based on the database.
Abstract:
The present invention provides a multi-layer tablet comprising: an effervescent layer comprising hydrochlorothiazide or amlodipine or its salt as an active ingredient, a carbonate salt, and an organic acid; and a telmisartan-containing layer.
Abstract:
A charging device for a portable terminal is provided. The charging device includes a charging cradle for mounting the portable terminal or a battery pack for the portable terminal, a multi-plug adapted to be mounted by being inserted into the charging cradle, hook holes formed in the charging cradle, and hooks adapted to be engaged with the hook holes, wherein the direction for inserting the multi-plug into the charging cradle and the direction for connecting the multi-plug to an external receptacle are perpendicular to each other. In accordance with an exemplary embodiment of the present invention, by producing charging cradles adapted to be commonly used worldwide, and by localizing multi-plugs by countries or cities, i.e., by providing each country or city with multi-plugs adapted to be suitably used in such a country or a city, a user can use his or her charging device by only buying a multi-plug available in a country or a city where the user stays if it is desired.
Abstract:
There is provided a semiconductor device comprising, a first metal pattern formed at a first metal level and extending in a first direction, a second metal pattern formed at the first metal level, extending in a second direction that is different than the first direction, and disposed on a side of the first metal pattern to be separated from the first metal pattern, a first via structure formed on the first metal pattern, a third metal pattern formed at a second metal level that is different than the first metal level and electrically connected to the first metal pattern by the first via structure, and a first pad electrically connected to the first metal pattern and a second pad electrically connected to the third metal pattern.
Abstract:
An apparatus and method for controlling a high power amplifier in a communication system are provided. The apparatus includes a Radio Frequency (RF) power detection unit for detecting an intensity of an RF input signal, a high power amplifier controller for determining a control signal, which indicates a voltage value of a drain bias to be provided to at least one drain node from among drain nodes of a drive amplifier and a main amplifier included in the high power amplifier, according to the detected intensity, a Direct Current (DC) voltage supplying unit for generating a DC voltage corresponding to the determined control signal, a drain bias connection unit for providing the generated DC voltage to said at least one drain node from among the drain nodes of the drive amplifier and the main amplifier, and the drive amplifier and the main amplifier for amplifying the RF input signal according to the provided DC voltage.
Abstract:
An apparatus for a High Power Amplifier (HPA) in a wireless communication system is provided. In one example, the apparatus includes a temperature sensor for determining temperature, a controller for receiving the determined temperature and for controlling a gate bias voltage corresponding to the determined temperature and an amplifier for amplifying a Radio Frequency (RF) signal by using the controlled gate bias voltage.