摘要:
A thin film transistor array panel includes an insulation substrate. A signal line is formed on the insulation substrate. A thin film transistor is connected to the signal line. A color filter is formed on the substrate. An organic insulator is formed on the color filter and includes a first portion and a second portion having different thicknesses. A light blocking member is formed on the second portion of the organic insulator. A difference between the surface height of the first portion of the organic insulator and the surface height of the second portion of the organic insulator is in the range of about 2.0 μm to 3.0 μm.
摘要:
A thin film transistor array panel includes an insulation substrate. A signal line is formed on the insulation substrate. A thin film transistor is connected to the signal line. A color filter is formed on the substrate. An organic insulator is formed on the color filter and includes a first portion and a second portion having different thicknesses. A light blocking member is formed on the second portion of the organic insulator. A difference between the surface height of the first portion of the organic insulator and the surface height of the second portion of the organic insulator is in the range of about 2.0 μm to 3.0 μm.
摘要:
The present invention relates to a liquid crystal display. The liquid crystal display has a lower panel including a first pixel area having a first pixel electrode and a first light leakage preventing member, a final pixel area having a second pixel electrode and a second light leakage preventing member, and middle pixel areas disposed between the first pixel area and the final pixel area, each of the middle pixel areas including a first middle pixel electrode and a second middle pixel electrode. Accordingly, light leakage may be effectively prevented at the first pixel area and the final pixel area that are disposed on the edge.
摘要:
The present invention relates to a liquid crystal display. The liquid crystal display has a lower panel including a first pixel area having a first pixel electrode and a first light leakage preventing member, a final pixel area having a second pixel electrode and a second light leakage preventing member, and middle pixel areas disposed between the first pixel area and the final pixel area, each of the middle pixel areas including a first middle pixel electrode and a second middle pixel electrode. Accordingly, light leakage may be effectively prevented at the first pixel area and the final pixel area that are disposed on the edge.
摘要:
Exemplary embodiments of the present invention disclose a liquid crystal display (LCD) and a method of manufacturing the same. The LCD may have a display area and a peripheral area. An organic layer of the peripheral area may be patterned using a half-tone mask, and a protrusion member may be formed in the peripheral area. Accordingly, the thin film transistor array panel and the corresponding substrate may be prevented from being temporary adhered in the peripheral area such that the density of the liquid crystal molecules filled in the peripheral area may be uniformly maintained and the display quality of the liquid crystal display may be improved.
摘要:
Provided are a metal line, a method of forming the same, and a display using the same. To increase resistance of a metal line having a multilayered structure of CuO/Cu and prevent blister formation, a plasma treatment is performed using a nitrogen-containing gas and a silicon-containing gas or using a hydrogen or argon as and the silicon-containing gas. Accordingly, a plasma treatment layer such as a SiNx or Si layer is thinly formed on the copper layer, thereby preventing an increase in resistance of the copper layer and also preventing blister formation caused by the damage of a copper oxide layer. Consequently, it is possible to improve the reliability of a copper line and thus enhance the reliability of a device.
摘要:
A thin film transistor substrate comprises an insulating substrate, a gate member formed on the insulating substrate, the gate member having a gate line and a first storage electrode spaced apart from the gate line, a gate insulating layer covering the gate member, an active layer formed on the gate insulating layer and overlapping the first storage electrode, and a data member formed on the active layer, the data member having a data line crossing the gate line and a second storage electrode overlapping the first storage electrode.
摘要:
The present application relates to a liquid crystal display including a first substrate, a plurality of gate lines, a plurality of data lines, thin film transistors connected to the gate and data lines, a barrier rib formed on the data lines, and pixel electrodes connected to the thin film transistors. The thin film transistors can be formed using a colored organic film that has an optical density in a range of 1 to 3. Color filters fill the regions surrounded by the barrier rib. Pixel electrodes can be formed on the color filters. A common electrode can be formed on the second substrate facing the first substrate. A liquid crystal layer can be situated between the first and second substrates, which are spaced apart at a predetermined distance by spacers.
摘要:
A manufacturing method of a thin film transistor (TFT) includes forming a gate electrode including a metal that can be combined with silicon to form silicide on a substrate and forming a gate insulation layer by supplying a gas which includes silicon to the gate electrode at a temperature below about 280° C. The method further includes forming a semiconductor on the gate insulation layer, forming a data line and a drain electrode on the semiconductor and forming a pixel electrode connected to the drain electrode.
摘要:
Provided are a display substrate and a display device including the same. The display substrate includes: gate wiring; a first semiconductor pattern formed on the gate wiring and having a first energy bandgap; a second semiconductor pattern formed on the first semiconductor pattern and having a second energy bandgap which is greater than the first energy bandgap; data wiring formed on the first semiconductor pattern; and a pixel electrode electrically connected to the data wiring. Because the second energy bandgap is larger than the first energy bandgap, a quantum well is formed in the first semiconductor pattern, enhancing electron mobility therein.