公开(公告)号：US07859109B2

公开(公告)日：2010-12-28

申请号：US10597200

申请日：2005-01-14

申请人： Jong-Lam Lee

发明人： Jong-Lam Lee

IPC分类号： H01L23/48

CPC分类号： H01L33/405 ,  H01L21/28575 ,  H01L33/32

摘要： The present invention relates to a gallium nitride-based compound semiconductor device and a method of manufacturing the same. According to the present invention, there is provided a gallium nitride-based III-V group compound semiconductor device comprising a gallium nitride-based semiconductor layer and an ohmic electrode layer formed on the gallium nitride-based semiconductor layer. The ohmic electrode layer comprises a contact metal layer, a reflective metal layer, and a diffusion barrier layer.

摘要翻译： 本发明涉及一种氮化镓系化合物半导体器件及其制造方法。 根据本发明，提供了一种氮化镓基III-V族化合物半导体器件，其包括氮化镓基半导体层和形成在氮化镓基半导体层上的欧姆电极层。 欧姆电极层包括接触金属层，反射金属层和扩散阻挡层。

公开(公告)号：US20100264442A1

公开(公告)日：2010-10-21

申请号：US12808333

申请日：2008-10-23

申请人： Jong-Lam Lee

发明人： Jong-Lam Lee

IPC分类号： H01L33/02 ,  H01L33/36 ,  H01L33/42

CPC分类号： H01L33/36 ,  H01L33/0079 ,  H01L33/40 ,  H01L33/641 ,  H01L2933/0016

摘要： Provided are a vertical-type light emitting device and a method of manufacturing the same. The light emitting device includes a p-type semiconductor layer, an active layer, and an n-type semi-conductor layer that are stacked, a cover layer disposed on a p-type electrode layer to surround the p-type electrode layer, a conductive support layer disposed on the cover layer, and an n-type electrode layer disposed on the n-type semiconductor layer.

摘要翻译： 提供了一种垂直型发光器件及其制造方法。 发光器件包括堆叠的p型半导体层，有源层和n型半导体层，设置在p型电极层上以围绕p型电极层的覆盖层， 导电支撑层设置在覆盖层上，n型电极层设置在n型半导体层上。

公开(公告)号：US07462881B2

公开(公告)日：2008-12-09

申请号：US11896307

申请日：2007-08-30

申请人： Jong-Lam Lee ,  In-kwon Jeong ,  Myung Cheol Yoo

发明人： Jong-Lam Lee ,  In-kwon Jeong ,  Myung Cheol Yoo

IPC分类号： H01L33/00

CPC分类号： H01L33/12 ,  H01C7/006 ,  H01C7/008 ,  H01L27/0802 ,  H01L28/20 ,  H01L33/0025 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/06 ,  H01L33/32 ,  H01L33/36 ,  H01L33/38 ,  H01L33/40 ,  H01L33/44 ,  H01L33/62 ,  Y10S438/958 ,  Y10S438/977

摘要： A method of fabricating semiconductor devices, such as GaN LEDs, on insulating substrates, such as sapphire. Semiconductor layers are produced on the insulating substrate using normal semiconductor processing techniques. Trenches that define the boundaries of the individual devices are then formed through the semiconductor layers and into the insulating substrate, beneficially by using inductive coupled plasma reactive ion etching. The trenches are then filled with an easily removed layer. A metal support structure is then formed on the semiconductor layers (such as by plating or by deposition) and the insulating substrate is removed. Electrical contacts, a passivation layer, and metallic pads are then added to the individual devices, and the individual devices are then diced out.

摘要翻译： 在诸如蓝宝石的绝缘基板上制造诸如GaN LED的半导体器件的方法。 使用正常的半导体处理技术在绝缘基板上制造半导体层。 然后，通过使用电感耦合的等离子体反应离子蚀刻，有利地通过半导体层形成限定各个器件的边界的沟槽并进入绝缘衬底。 然后用容易去除的层填充沟槽。 然后在半导体层（例如通过电镀或通过沉积）形成金属支撑结构，并且去除绝缘基板。 然后将电触点，钝化层和金属焊盘添加到各个器件中，然后将各个器件切出。

公开(公告)号：US07964884B2

公开(公告)日：2011-06-21

申请号：US11577710

申请日：2005-10-21

申请人： Jong-Lam Lee

发明人： Jong-Lam Lee

IPC分类号： H01L33/00

CPC分类号： H01L33/40 ,  H01L33/0079 ,  H01L33/32 ,  H01L33/387 ,  H01L33/405 ,  H01L33/44

摘要： The present invention relates to a gallium nitride (GaN) compound semiconductor light emitting element (LED) and a method of manufacturing the same. The present invention provides a vertical GaN LED capable of improving the characteristics of a horizontal LED by means of a metallic protective film layer and a metallic support layer. According to the present invention, a thick metallic protective film layer with a thickness of at least 10 microns is formed on the lateral and/or bottom sides of the vertical GaN LED to protect the element against external impact and to easily separate the chip. Further, a metallic substrate is used instead of a sapphire substrate to efficiently release the generated heat to the outside when the element is operated, so that the LED can be suitable for a high-power application and an element having improved optical output characteristics can also be manufactured. A metallic support layer is formed to protect the element from being distorted or damaged due to impact. Furthermore, a P-type electrode is partially formed on a P—GaN layer in a mesh form to thereby maximize the emission of photons generated in the active layer toward the N—GaN layer.

摘要翻译： 本发明涉及一种氮化镓（GaN）化合物半导体发光元件（LED）及其制造方法。 本发明提供一种能够通过金属保护膜层和金属支撑层改善水平LED的特性的垂直GaN LED。 根据本发明，在垂直GaN LED的侧面和/或底面上形成厚度至少为10微米的厚金属保护膜层，以保护元件免受外部冲击并容易地分离芯片。 此外，当元件被操作时，使用金属基板代替蓝宝石基板来有效地将产生的热量释放到外部，使得LED可以适合于大功率应用，并且具有改善的光输出特性的元件也可以 制造。 形成金属支撑层以保护元件免于由于冲击而变形或损坏。 此外，P型电极以网格形式部分地形成在P-GaN层上，从而最大限度地发挥在有源层中朝向N-GaN层产生的光子。

公开(公告)号：US07569865B2

公开(公告)日：2009-08-04

申请号：US11002413

申请日：2004-12-03

申请人： Jong-Lam Lee ,  In-kwon Jeong ,  Myung Cheol Yoo

发明人： Jong-Lam Lee ,  In-kwon Jeong ,  Myung Cheol Yoo

IPC分类号： H01L33/00

CPC分类号： H01L33/12 ,  H01C7/006 ,  H01C7/008 ,  H01L27/0802 ,  H01L28/20 ,  H01L33/0025 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/06 ,  H01L33/32 ,  H01L33/36 ,  H01L33/38 ,  H01L33/40 ,  H01L33/44 ,  H01L33/62 ,  Y10S438/958 ,  Y10S438/977

摘要： A method of fabricating semiconductor devices, such as GaN LEDs, on insulating substrates, such as sapphire. Semiconductor layers are produced on the insulating substrate using normal semiconductor processing techniques. Trenches that define the boundaries of the individual devices are then formed through the semiconductor layers and into the insulating substrate, beneficially by using inductive coupled plasma reactive ion etching. The trenches are then filled with an easily removed layer. A metal support structure is then formed on the semiconductor layers (such as by plating or by deposition) and the insulating substrate is removed. Electrical contacts, a passivation layer, and metallic pads are then added to the individual devices, and the individual devices are then diced out.

公开(公告)号：US20070295986A1

公开(公告)日：2007-12-27

申请号：US11896307

申请日：2007-08-30

申请人： Jong-Lam Lee ,  In-Kwon Jeong ,  Myung Yoo

发明人： Jong-Lam Lee ,  In-Kwon Jeong ,  Myung Yoo

IPC分类号： H01L33/00

CPC分类号： H01L33/12 ,  H01C7/006 ,  H01C7/008 ,  H01L27/0802 ,  H01L28/20 ,  H01L33/0025 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/06 ,  H01L33/32 ,  H01L33/36 ,  H01L33/38 ,  H01L33/40 ,  H01L33/44 ,  H01L33/62 ,  Y10S438/958 ,  Y10S438/977

摘要： A method of fabricating semiconductor devices, such as GaN LEDs, on insulating substrates, such as sapphire. Semiconductor layers are produced on the insulating substrate using normal semiconductor processing techniques. Trenches that define the boundaries of the individual devices are then formed through the semiconductor layers and into the insulating substrate, beneficially by using inductive coupled plasma reactive ion etching. The trenches are then filled with an easily removed layer. A metal support structure is then formed on the semiconductor layers (such as by plating or by deposition) and the insulating substrate is removed. Electrical contacts, a passivation layer, and metallic pads are then added to the individual devices, and the individual devices are then diced out.

公开(公告)号：US20060099730A1

公开(公告)日：2006-05-11

申请号：US11232957

申请日：2005-09-23

申请人： Jong-Lam Lee ,  In-Kwon Jeong ,  Myung Yoo

发明人： Jong-Lam Lee ,  In-Kwon Jeong ,  Myung Yoo

IPC分类号： H01L21/00

CPC分类号： H01L33/12 ,  H01C7/006 ,  H01C7/008 ,  H01L27/0802 ,  H01L28/20 ,  H01L33/0025 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/06 ,  H01L33/32 ,  H01L33/36 ,  H01L33/38 ,  H01L33/40 ,  H01L33/44 ,  H01L33/62 ,  Y10S438/958 ,  Y10S438/977

摘要： A method of fabricating semiconductor devices, such as GaN LEDs, on insulating substrates, such as sapphire. Semiconductor layers are produced on the insulating substrate using normal semiconductor processing techniques. Trenches that define the boundaries of the individual devices are then formed through the semiconductor layers and into the insulating substrate, beneficially by using inductive coupled plasma reactive ion etching. The trenches are then filled with an easily removed layer. A metal support structure is then formed on the semiconductor layers (such as by plating or by deposition) and the insulating substrate is removed. Electrical contacts, a passivation layer, and metallic pads are then added to the individual devices, and the individual devices are then diced out.

公开(公告)号：US08323999B2

公开(公告)日：2012-12-04

申请号：US12952928

申请日：2010-11-23

申请人： Jong-Lam Lee

发明人： Jong-Lam Lee

IPC分类号： H01L21/283

CPC分类号： H01L33/405 ,  H01L21/28575 ,  H01L33/32

摘要： The present invention relates to a gallium nitride-based compound semiconductor device and a method of manufacturing the same. According to the present invention, there is provided a gallium nitride-based III-V group compound semiconductor device comprising a gallium nitride-based semiconductor layer and an ohmic electrode layer formed on the gallium nitride-based semiconductor layer. The ohmic electrode layer comprises a contact metal layer, a reflective metal layer, and a diffusion barrier layer.

摘要翻译： 本发明涉及一种氮化镓系化合物半导体器件及其制造方法。 根据本发明，提供了一种氮化镓基III-V族化合物半导体器件，其包括氮化镓基半导体层和形成在氮化镓基半导体层上的欧姆电极层。 欧姆电极层包括接触金属层，反射金属层和扩散阻挡层。

公开(公告)号：US08008101B2

公开(公告)日：2011-08-30

申请号：US12695596

申请日：2010-01-28

申请人： Jong-Lam Lee

发明人： Jong-Lam Lee

IPC分类号： H01L21/28

CPC分类号： H01L33/40 ,  H01L33/0079 ,  H01L33/32 ,  H01L33/387 ,  H01L33/405 ,  H01L33/44

摘要： The present invention relates to a gallium nitride (GaN) compound semiconductor light emitting element (LED) and a method of manufacturing the same. The present invention provides a vertical GaN LED capable of improving the characteristics of a horizontal LED by means of a metallic protective film layer and a metallic support layer. According to the present invention, a thick metallic protective film layer with a thickness of at least 10 microns is formed on the lateral and/or bottom sides of the vertical GaN LED to protect the element against external impact and to easily separate the chip. Further, a metallic substrate is used instead of a sapphire substrate to efficiently release the generated heat to the outside when the element is operated, so that the LED can be suitable for a high-power application and an element having improved optical output characteristics can also be manufactured. A metallic support layer is formed to protect the element from being distorted or damaged due to impact. Furthermore, a P-type electrode is partially formed on a P-GaN layer in a mesh form to thereby maximize the emission of photons generated in the active layer toward the N-GaN layer.

公开(公告)号：US07928465B2

公开(公告)日：2011-04-19

申请号：US12797335

申请日：2010-06-09

申请人： Jong-Lam Lee ,  In-Kwon Jeong ,  Myung Cheol Yoo

发明人： Jong-Lam Lee ,  In-Kwon Jeong ,  Myung Cheol Yoo

IPC分类号： H01L33/00

CPC分类号： H01L33/12 ,  H01C7/006 ,  H01C7/008 ,  H01L27/0802 ,  H01L28/20 ,  H01L33/0025 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/06 ,  H01L33/32 ,  H01L33/36 ,  H01L33/38 ,  H01L33/40 ,  H01L33/44 ,  H01L33/62 ,  Y10S438/958 ,  Y10S438/977

摘要： A method of fabricating semiconductor devices, such as GaN LEDs, on insulating substrates, such as sapphire. Semiconductor layers are produced on the insulating substrate using normal semiconductor processing techniques. Trenches that define the boundaries of the individual devices are then formed through the semiconductor layers and into the insulating substrate, beneficially by using inductive coupled plasma reactive ion etching. The trenches are then filled with an easily removed layer. A metal support structure is then formed on the semiconductor layers (such as by plating or by deposition) and the insulating substrate is removed. Electrical contacts, a passivation layer, and metallic pads are then added to the individual devices, and the individual devices are then diced out.

摘要翻译： 在诸如蓝宝石的绝缘基板上制造诸如GaN LED的半导体器件的方法。 使用正常的半导体处理技术在绝缘基板上制造半导体层。 然后，通过使用电感耦合的等离子体反应离子蚀刻，有利地通过半导体层形成限定各个器件的边界的沟槽并进入绝缘衬底。 然后用容易去除的层填充沟槽。 然后在半导体层（例如通过电镀或通过沉积）形成金属支撑结构，并且去除绝缘基板。 然后将电触点，钝化层和金属焊盘添加到各个器件中，然后将各个器件切出。