摘要:
Provided is a method of forming a semiconductor device. The method includes forming an insulating film on a semiconductor substrate, a conductive film on the insulating film, and a first structure and a second structure on the conductive film. The semiconductor substrate has first and second regions. The first and second structures are formed on the first and second regions, respectively. An impurity diffused region is formed in the semiconductor substrate using the first structure as a mask. The impurity diffused region overlaps the first structure. A portion of the first structure, and the conductive film are etched to respectively form a gate structure and a capacitor structure on the first and second regions.
摘要:
Provided is a method of forming a semiconductor device. The method includes forming an insulating film on a semiconductor substrate, a conductive film on the insulating film, and a first structure and a second structure on the conductive film. The semiconductor substrate has first and second regions. The first and second structures are formed on the first and second regions, respectively. An impurity diffused region is formed in the semiconductor substrate using the first structure as a mask. The impurity diffused region overlaps the first structure. A portion of the first structure, and the conductive film are etched to respectively form a gate structure and a capacitor structure on the first and second regions.
摘要:
An apparatus and a method for raising an output efficiency in a mobile communication terminal are provided. The apparatus includes a supply modulator and a power amplifier. The supply modulator includes a DC-DC converter, a voltage regulator, and a switching regulator. The supply modulator modulates an envelope component of an input signal to generate power. The power amplifier amplifies a phase component of the input signal using the power generated by the supply modulator as a power source of a collector/drain. The DC-DC converter raises battery power of the mobile communication terminal. The voltage regulator determines an output voltage of the supply modulator using the power raised by the DC-DC converter. The switching regulator determines an output current of the supply regulator using the battery power of the mobile communication terminal.
摘要:
A method of fabricating a metal interconnection and a method of fabricating image sensor using the same are provided. The method of fabricating a metal interconnection including forming a interlayer dielectric layer on a substrate, forming an interconnection formation region in the interlayer dielectric layer, performing an ultraviolet (UV) treatment on the substrate after the interconnection formation region is formed and forming a metal interconnection in the interconnection formation region.
摘要:
An apparatus and a method for controlling transmission and reception control in a wireless communication system are provided. The apparatus includes at least one voltage regulator, a power source consumer, at least one capacitor, and a controller. The at least one voltage regulator provides a power source that is a regulated voltage. The power source consumer processes a Radio Frequency (RF) signal using the power source that is the regulated voltage. The at least one capacitor is connected to an output port of the at least one voltage regulator and a power source input port of the power source consumer. The controller turns off the at least one voltage regulator during a deactivation period of the communication apparatus and turns on the at least one voltage regulator during an activation period of the communication apparatus.
摘要:
A method and an apparatus for digital up-down conversion using an Infinite Impulse Response (IIR) filter are provided. The method for digital up-down conversion for frequency conversion in a mobile communication system using plural frequency converts, includes IIR-filtering, by a magnitude response IIR filter having the same magnitude response as in Finite Impulse Response (FIR) filtering, an input signal and a stable filter coefficient calculated according to a Levinson polynomial; and receiving, by the magnitude response IIR filter, the IIR filtered signal, and performing IIR filtering by a phase compensation IIR filter having a filter coefficient compensating for a non-linear phase to a linear phase.
摘要:
A method of fabricating an image sensor includes forming a photoelectric transformation device on a substrate and forming a dielectric layer structure on the substrate. The dielectric layer structure includes multi-layer interlayer dielectric layers and multi-layer metal interconnections which are located between the multi-layer interlayer dielectric layers. A cavity which penetrates the multi-layer interlayer dielectric layers on the photoelectric transformation device is formed. A heat treatment is performed on the substrate on which the cavity is formed.
摘要:
An apparatus and a method for raising an output efficiency in a mobile communication terminal are provided. The apparatus includes a supply modulator and a power amplifier. The supply modulator includes a DC-DC converter, a voltage regulator, and a switching regulator. The supply modulator modulates an envelope component of an input signal to generate power. The power amplifier amplifies a phase component of the input signal using the power generated by the supply modulator as a power source of a collector/drain. The DC-DC converter raises battery power of the mobile communication terminal. The voltage regulator determines an output voltage of the supply modulator using the power raised by the DC-DC converter. The switching regulator determines an output current of the supply regulator using the battery power of the mobile communication terminal.
摘要:
A method of fabricating a metal interconnection and a method of fabricating image sensor using the same are provided. The method of fabricating a metal interconnection including forming a interlayer dielectric layer on a substrate, forming an interconnection formation region in the interlayer dielectric layer, performing an ultraviolet (UV) treatment on the substrate after the interconnection formation region is formed and forming a metal interconnection in the interconnection formation region.
摘要:
A method of fabricating a metal interconnection and a method of fabricating image sensor using the same are provided. The method of fabricating a metal interconnection including forming a interlayer dielectric layer on a substrate, forming an interconnection formation region in the interlayer dielectric layer, performing an ultraviolet (UV) treatment on the substrate after the interconnection formation region is formed and forming a metal interconnection in the interconnection formation region.