Slurry composition for chemical-mechanical polishing and method of chemical-mechanical polishing with the same
    1.
    发明授权
    Slurry composition for chemical-mechanical polishing and method of chemical-mechanical polishing with the same 失效
    用于化学机械抛光的浆料组合物及其化学机械抛光方法

    公开(公告)号:US08338300B2

    公开(公告)日:2012-12-25

    申请号:US12219985

    申请日:2008-07-31

    CPC classification number: H01L21/3212 C09G1/02 C09K3/1463

    Abstract: Provided may be a slurry composition for chemical mechanical polishing (CMP) and a CMP method using the same. For example, the slurry composition may include a first polishing inhibitor including at least one of PO43− or HPO42− and a second polishing inhibitor, which may be a C2-C10 hydrocarbon compound having —SO3H or —OSO3H. By using the slurry composition for CMP and a CMP method using the same, increased selectivity to SiN may be obtained.

    Abstract translation: 可提供用于化学机械抛光(CMP)的浆料组合物和使用其的CMP方法。 例如,浆料组合物可以包括第一抛光抑制剂,其包括PO43-或HPO42-和至少一种抛光抑制剂,其可以是具有-SO 3 H或-OSO 3 H的C 2 -C 10烃化合物。 通过使用用于CMP的浆料组合物和使用其的CMP方法,可以获得对SiN的增加的选择性。

    Method of fabricating semiconductor device
    2.
    发明授权
    Method of fabricating semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号:US07846801B2

    公开(公告)日:2010-12-07

    申请号:US11833050

    申请日:2007-08-02

    CPC classification number: H01L29/66795 H01L29/7851

    Abstract: Disclosed is a method of fabricating a semiconductor device including a multi-gate transistor. The method of fabricating a semiconductor device includes providing a semiconductor device having a number of active patterns which extend in a first direction, are separated by an isolation layer, and covered with a first insulating layer; forming a first groove by etching the isolation layer located between the active patterns adjacent to each other in the first direction; burying the first groove with a passivation layer; forming a second groove exposing at least a portion of both sides of the active patterns by etching the isolation layer located between the active patterns in a second direction intersecting the first direction; removing the passivation layer in the first groove; and forming a gate line filling at least a portion of the second groove and extending in the second direction.

    Abstract translation: 公开了一种制造包括多栅极晶体管的半导体器件的方法。 制造半导体器件的方法包括提供具有多个沿第一方向延伸的活性图案的半导体器件,被隔离层隔开并被第一绝缘层覆盖; 通过在第一方向上蚀刻位于彼此相邻的有源图案之间的隔离层来形成第一凹槽; 用钝化层掩埋第一槽; 通过在与所述第一方向相交的第二方向上蚀刻位于所述有源图案之间的所述隔离层来形成暴露所述有源图案的两侧的至少一部分的第二凹槽; 去除第一凹槽中的钝化层; 以及形成填充所述第二凹槽的至少一部分并沿所述第二方向延伸的栅极线。

    Mold apparatus
    3.
    发明授权
    Mold apparatus 有权
    模具设备

    公开(公告)号:US07267320B2

    公开(公告)日:2007-09-11

    申请号:US11142232

    申请日:2005-06-02

    Applicant: Jong-won Lee

    Inventor: Jong-won Lee

    Abstract: A mold apparatus having at least a pair of molds formed with a cavity, at least one pipe accommodator formed in the molds, at least one heat pipe mounted in the pipe accommodator, a heat-cool source part connected to the heat pipe the heat and cool the heat pipe, and a controller to control the heat-cool source part to selectively heat and cool the heat pipe. Thus a mold apparatus to reduce a molding cycle and improve the quality of a molded product's appearance is provided.

    Abstract translation: 一种模具装置,具有形成有空腔的至少一对模具,形成在模具中的至少一个管容纳器,安装在管容纳器中的至少一个热管,连接到热管的热源部分, 冷却热管,控制器控制热源部分选择性地加热和冷却热管。 因此,提供了减少成型周期并提高模制品外观质量的模具装置。

    Wafer polishing slurry and chemical mechanical polishing (CMP) method using the same
    4.
    发明授权
    Wafer polishing slurry and chemical mechanical polishing (CMP) method using the same 有权
    晶圆抛光浆和化学机械抛光(CMP)方法使用相同

    公开(公告)号:US06514862B2

    公开(公告)日:2003-02-04

    申请号:US09977239

    申请日:2001-10-16

    CPC classification number: C09G1/02 H01L21/31053

    Abstract: A chemical mechanical polishing slurry includes an additive of a quaternary ammonium compound having a form of {N—(R1R2R3R4)}+X−, in which R1, R2, R3, and R4 are radicals, and X− is an anion derivative including halogen elements. Preferably, the quaternary ammonium compound is one of [(CH3)3NCH2CH2OH]Cl, [(CH3)3NCH2CH2OH]l, [(CH3)3NCH2CH2OH]Br, [(CH3)3NCH2CH2OH]CO3, and mixtures thereof. The slurry may further include a pH control agent formed of a base such as KOH, NH4OH, and (CH3)4NOH, and an acid such as HCl, H2SO4, H3PO4, and HNO3. Also, the pH control agent can include [(CH3)3NCH2CH2OH]OH. The slurry may further include a surfactant such as cetyldimethyl ammonium bromide, cetyldimethyl ammonium bromide, polyethylene oxide, polyethylene alcohol or polyethylene glycol.

    Abstract translation: 化学机械抛光浆料包括具有{N-(R1R2R3R4)} + X-形式的季铵化合物的添加剂,其中R 1,R 2,R 3和R 4是自由基,X是包含卤素的阴离子衍生物 元素。 优选地,季铵化合物是[(CH 3)3 NHCH 2 CH 2 OH] Cl,[(CH 3)3 NHCH 2 CH 2 OH] 1,[(CH 3)3 NHCH 2 CH 2 OH] Br,[(CH 3)3 NHCH 2 CH 2 OH] CO 3及其混合物之一。 该浆料还可以包括由碱如KOH,NH 4 OH和(CH 3)4 NOH形成的pH控制剂,以及酸如HCl,H 2 SO 4,H 3 PO 4和HNO 3。 此外,pH控制剂可以包括[(CH 3)3 NHCH 2 OH] OH。 浆料还可以包括表面活性剂如十六烷基二甲基溴化铵,鲸蜡基二甲基溴化铵,聚环氧乙烷,聚乙烯醇或聚乙二醇。

    Cathode active material, cathode including the same and lithium battery including cathode
    5.
    发明授权
    Cathode active material, cathode including the same and lithium battery including cathode 有权
    阴极活性物质,包括其的阴极和包含阴极的锂电池

    公开(公告)号:US08357315B2

    公开(公告)日:2013-01-22

    申请号:US12720159

    申请日:2010-03-09

    Applicant: Jong-won Lee

    Inventor: Jong-won Lee

    Abstract: A cathode active material, a cathode including the cathode active material, and a lithium battery including the cathode. A lithium manganese phosphate cathode active material having an olivine structure represented by LixMn1-y-zM′yM″zPO4, where 0.6≦x≦1.0, 0

    Abstract translation: 阴极活性物质,包含正极活性物质的阴极和包含阴极的锂电池。 一种具有由LixMn1-y-zM'yM“zPO4表示的橄榄石结构的磷酸锰锂正极活性物质,其中0.6≦̸ x< 1.0; 1.0,0

    Distributed opportunistic scheduling in IEEE 802.11 wireless location area networks (WLANs)
    6.
    发明授权
    Distributed opportunistic scheduling in IEEE 802.11 wireless location area networks (WLANs) 有权
    IEEE 802.11无线定位区域网络(WLAN)中的分布式机会调度

    公开(公告)号:US07792138B2

    公开(公告)日:2010-09-07

    申请号:US11520541

    申请日:2006-09-13

    CPC classification number: H04W74/0825 H04L1/0003

    Abstract: A WLAN distributed/opportunistic scheduling (WDOS) method for acquiring a multi-user diversity gain is disclosed. The WDOS method allows a transmitter (i.e., a transmission user) to observe channel conditions of receivers (i.e., reception users), and commands the transmitter to transmit packets to a specific receiver having a relative good channel condition. The WDOS method uses a modified RTS/CTS exchange method to perform the channel probing. If the transmitter broadcasts the BRTS frame, each receiver transmits a CTS frame after the lapse of its backoff period. According to the reception signal strength distribution, the backoff delay time minimizes the number of CTS collisions irrespective of the number of receivers, reduces an amount of channel probing overheads, and maximizes a multi-user diversity gain. The better the relative channel condition, the lower the backoff delay time.

    Abstract translation: 公开了一种用于获取多用户分集增益的WLAN分布/机会调度(WDOS)方法。 WDOS方法允许发射机(即传输用户)观察接收机(即,接收用户)的信道状况,并命令发射机向具有相对良好信道状态的特定接收机发送分组。 WDOS方法使用修改的RTS / CTS交换方法来执行信道探测。 如果发射机广播BRTS帧,则每个接收机在其退避周期过去之后发送CTS帧。 根据接收信号强度分布,回退延迟时间使CTS冲突的数量最小化,而与接收机的数量无关,减少了信道探测开销的数量,并使多用户分集增益最大化。 相对通道条件越好,退避延迟时间越短。

    Molding apparatus having ejector sleeve and ejector pin
    7.
    发明授权
    Molding apparatus having ejector sleeve and ejector pin 有权
    具有推出器套筒和顶针的成型设备

    公开(公告)号:US07597550B2

    公开(公告)日:2009-10-06

    申请号:US11475182

    申请日:2006-06-27

    CPC classification number: B29C45/40

    Abstract: An molding apparatus includes a core having a recessed part corresponding to a protruding part of a molded article, an ejector pin movably provided in the core to eject the molded article, an ejector sleeve movably provided in the core to push the protruding part of the molded article, and an ejector actuating part to move the ejector pin and the ejector sleeve together to a separation position where the protruding part of the molded article is separated from the recessed portion of the core, to bring the ejector sleeve into a stop position so that the ejector sleeve does not protrude from the core, and to move the ejector pin from the separation position to a removal position where the molded article is spaced apart from the core by a predetermined distance. Accordingly, the molding apparatus is capable of preventing damage caused on an ejector sleeve.

    Abstract translation: 一种成型装置,具有芯部,该芯部具有与模制品的突出部相对应的凹部,可移动地设置在芯部中以推出模制品的推出销,可移动地设置在芯中以推动模制品的突出部分的推出器套筒 物品和喷射器致动部件,以将顶出销和推出器套筒一起移动到模制品的突出部分与芯部的凹部分离的分离位置,以使顶出器套筒处于停止位置,使得 推出器套筒不从芯部突出,并且将顶出销从分离位置移动到模制品与芯部间隔预定距离的移除位置。 因此,成型设备能够防止在顶出套筒上造成的损坏。

    Mold apparatus
    9.
    发明申请
    Mold apparatus 有权
    模具设备

    公开(公告)号:US20050276875A1

    公开(公告)日:2005-12-15

    申请号:US11142232

    申请日:2005-06-02

    Applicant: Jong-won Lee

    Inventor: Jong-won Lee

    Abstract: A mold apparatus having at least a pair of molds formed with a cavity, at least one pipe accommodator formed in the molds, at least one heat pipe mounted in the pipe accommodator, a heat-cool source part connected to the heat pipe the heat and cool the heat pipe, and a controller to control the heat-cool source part to selectively heat and cool the heat pipe. Thus a mold apparatus to reduce a molding cycle and improve the quality of a molded product's appearance is provided.

    Abstract translation: 一种模具装置,具有形成有空腔的至少一对模具,形成在模具中的至少一个管容纳器,安装在管容纳器中的至少一个热管,连接到热管的热源部分, 冷却热管,控制器控制热源部分选择性地加热和冷却热管。 因此,提供了减少成型周期并提高模制品外观质量的模具装置。

    Chemical/mechanical polishing slurry, and chemical mechanical polishing process and shallow trench isolation process employing the same
    10.
    发明授权
    Chemical/mechanical polishing slurry, and chemical mechanical polishing process and shallow trench isolation process employing the same 失效
    化学/机械抛光浆料和化学机械抛光工艺以及采用其的浅沟槽隔离工艺

    公开(公告)号:US06914001B2

    公开(公告)日:2005-07-05

    申请号:US10351539

    申请日:2003-01-27

    CPC classification number: H01L21/31053 C09G1/02 C09K3/1463

    Abstract: A CMP oxide slurry includes an aqueous solution containing abrasive particles and two or more different passivation agents. Preferably, the aqueous solution is made up of deionized water, and the abrasive particles are a metal oxide selected from the group consisting of ceria, silica, alumina, titania, zirconia and germania. Also, a first passivation agent may be an anionic, cationic or nonionic surfactant, and a second passivation agent may be a phthalic acid and its salts. In one example, the first passivation agent is poly-vinyl sulfonic acid, and the second passivation agent is potassium hydrogen phthalate. The slurry exhibits a high oxide to silicon nitride removal selectivity.

    Abstract translation: CMP氧化物浆料包括含有磨料颗粒和两种或更多种不同钝化剂的水溶液。 优选地,水溶液由去离子水组成,磨料颗粒是选自二氧化铈,二氧化硅,氧化铝,二氧化钛,氧化锆和氧化锗的金属氧化物。 此外,第一钝化剂可以是阴离子,阳离子或非离子表面活性剂,第二钝化剂可以是邻苯二甲酸及其盐。 在一个实例中,第一钝化剂是聚乙烯基磺酸,第二钝化剂是邻苯二甲酸氢钾。 该浆料表现出高的氧化物与氮化硅的去除选择性。

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