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    Magnetic packet memory storage devices, memory systems including such devices, and methods of controlling such devices
    3.
    发明授权
    Magnetic packet memory storage devices, memory systems including such devices, and methods of controlling such devices 失效
    磁性分组存储器存储设备，包括这种设备的存储器系统以及控制这些设备的方法

    公开(公告)号：US08050074B2

    公开(公告)日：2011-11-01

    申请号：US12658807

    申请日：2010-02-16

    申请人： Ho-jung Kim ,  Chul-woo Park ,  Sang-beom Kang ,  Jong-wan Kim ,  Hyun-ho Choi ,  Young-pil Kim ,  Sung-chul Lee

    发明人： Ho-jung Kim ,  Chul-woo Park ,  Sang-beom Kang ,  Jong-wan Kim ,  Hyun-ho Choi ,  Young-pil Kim ,  Sung-chul Lee

    IPC分类号： G11C19/00

    CPC分类号： G11C11/15 ,  G11C5/04

    摘要： A memory device is comprised of a magnetic structure that stores information in a plurality of domains of the magnetic structure. A write unit writes information to at least one of the plurality of domains of the magnetic structure by applying a write current to the magnetic structure in response to a control signal. A read unit reads information from at least one of the plurality of domains of the magnetic structure by applying a read current to the magnetic structure in response to the control signal. A domain wall movement control unit is coupled to a portion of the magnetic structure and moves information stored in the plurality of domains in the magnetic structure to other domains in the magnetic structure in response to the control signal. The write unit, the read unit and the domain wall movement control unit are all coupled to the same control signal line that provides the control signal.

    摘要翻译： 存储器件由将磁信息存储在磁结构的多个域中的磁结构构成。 写单元响应于控制信号向磁结构施加写入电流，将信息写入磁结构的多个域中的至少一个。 读取单元通过响应于控制信号向磁性结构施加读取电流，从磁性结构的多个域中的至少一个域读取信息。 畴壁移动控制单元耦合到磁结构的一部分，并且响应于控制信号将存储在磁结构中的多个域中的信息移动到磁结构中的其他区域。 写单元，读单元和域壁移动控制单元都耦合到提供控制信号的相同控制信号线。

    Magnetic packet memory storage devices, memory systems including such devices, and methods of controlling such devices
    4.
    发明申请
    Magnetic packet memory storage devices, memory systems including such devices, and methods of controlling such devices 失效
    磁性分组存储器存储设备，包括这种设备的存储器系统以及控制这些设备的方法

    公开(公告)号：US20100208381A1

    公开(公告)日：2010-08-19

    申请号：US12658807

    申请日：2010-02-16

    申请人： Ho-jung Kim ,  Chul-woo Park ,  Sang-beom Kang ,  Jong-wan Kim ,  Hyun-ho Choi ,  Young-pil Kim ,  Sung-chul Lee

    发明人： Ho-jung Kim ,  Chul-woo Park ,  Sang-beom Kang ,  Jong-wan Kim ,  Hyun-ho Choi ,  Young-pil Kim ,  Sung-chul Lee

    IPC分类号： G11B19/02

    CPC分类号： G11C11/15 ,  G11C5/04

    摘要： A memory device is comprised of a magnetic structure that stores information in a plurality of domains of the magnetic structure. A write unit writes information to at least one of the plurality of domains of the magnetic structure by applying a write current to the magnetic structure in response to a control signal. A read unit reads information from at least one of the plurality of domains of the magnetic structure by applying a read current to the magnetic structure in response to the control signal. A domain wall movement control unit is coupled to a portion of the magnetic structure and moves information stored in the plurality of domains in the magnetic structure to other domains in the magnetic structure in response to the control signal. The write unit, the read unit and the domain wall movement control unit are all coupled to the same control signal line that provides the control signal.

    摘要翻译： 存储器件由将磁信息存储在磁结构的多个域中的磁结构构成。 写单元响应于控制信号向磁结构施加写入电流，将信息写入磁结构的多个域中的至少一个。 读取单元通过响应于控制信号向磁性结构施加读取电流，从磁性结构的多个域中的至少一个域读取信息。 畴壁移动控制单元耦合到磁结构的一部分，并且响应于控制信号将存储在磁结构中的多个域中的信息移动到磁结构中的其他区域。 写单元，读单元和域壁移动控制单元都耦合到提供控制信号的相同控制信号线。