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    Method of Manufacturing an Image Sensor and Image Sensor
    1.
    发明申请
    Method of Manufacturing an Image Sensor and Image Sensor 审中-公开
    制作图像传感器和图像传感器的方法

    公开(公告)号：US20080265348A1

    公开(公告)日：2008-10-30

    申请号：US11570248

    申请日：2005-05-12

    申请人： Joris Maas ,  Leendert De Bruin ,  Daniel Wilhelmus Elisabeth Verbugt ,  Nicolaas Johannes Anthonius Van Veen ,  Eric Cornelis Egbertus Van Grunsven ,  Gerardus Lubertus Jacobus Reuvers ,  Erik Harold Groot

    发明人： Joris Maas ,  Leendert De Bruin ,  Daniel Wilhelmus Elisabeth Verbugt ,  Nicolaas Johannes Anthonius Van Veen ,  Eric Cornelis Egbertus Van Grunsven ,  Gerardus Lubertus Jacobus Reuvers ,  Erik Harold Groot

    IPC分类号： H01L31/0232 ,  H01L21/86

    CPC分类号： H01L31/02162 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14685 ,  H01L31/02327

    摘要： A method of manufacturing a back-side (14) illuminated image sensor (1) is disclosed, comprising the steps of: starting with a wafer (2) having a first (3) and a second surface (4), providing light sensitive pixel regions (5) extending into the wafer (2) from the first surface (3), securing the wafer (2) onto a protective substrate (7) such that the first surface (3) faces the protective substrate, the wafer comprising a substrate of a first material (8) with an optical transparent layer (9) and a layer of semiconductor material (10), wherein the substrate (8) is selectively removed from the layer of semiconductor material by using the optical transparent layer (9) as stopping layer. For back-side illuminated image sensors, light has to transmit through the semiconductor layer and enter into the light sensitive pixel regions (5). In order to reduce absorption losses, it is very advantageous that the semiconductor layer (10) can be made relatively thin with a good uniformity. Because of the reduced thickness of the semiconductor layer, more light can enter into the light sensitive regions, resulting in an improved efficiency of the image sensor.

    摘要翻译： 公开了一种制造背面（14）照明图像传感器（1）的方法，包括以下步骤：从具有第一（3）和第二表面（4）的晶片（2）开始，提供光敏像素 从所述第一表面（3）延伸到所述晶片（2）中的区域（5），将所述晶片（2）固定到保护衬底（7）上，使得所述第一表面（3）面向所述保护衬底，所述晶片包括衬底 具有光学透明层（9）和半导体材料层（10）的第一材料（8），其中通过使用光学透明层（9）作为选择性地从半导体材料层中去除基板（8） 停止层。 对于背面照明图像传感器，光必须透过半导体层并进入光敏像素区域（5）。 为了减少吸收损失，非常有利的是，半导体层（10）可以制成相对较薄并具有良好的均匀性。 由于半导体层的厚度减小，更多的光可以进入光敏区域，从而提高了图像传感器的效率。

    Method of producing conductive pillars in semiconductor device
    3.
    发明授权
    Method of producing conductive pillars in semiconductor device 失效
    在半导体器件中制造导电柱的方法

    公开(公告)号：US5358902A

    公开(公告)日：1994-10-25

    申请号：US165556

    申请日：1993-12-10

    申请人： Robertus D. J. Verhaar ,  Leendert De Bruin

    发明人： Robertus D. J. Verhaar ,  Leendert De Bruin

    IPC分类号： H01L21/60 ,  H01L21/768 ,  H01L21/441

    CPC分类号： H01L24/11 ,  H01L21/76885 ,  H01L2224/1147 ,  H01L2224/13099 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01033 ,  H01L2924/01072 ,  H01L2924/01074 ,  H01L2924/1306 ,  H01L2924/14

    摘要： Electrical connection is provided to a device region (3,4) bounded by an insulating region (12a,12b,9) and adjacent one major surface (1a) of a semiconductor body (1) by applying a flowable organic material to form an organic layer (20) on the one major surface (1a), defining a masking layer (30) over the organic layer (20), etching the organic layer (20) selectively with respect to the underlying device and insulating regions through a window (31) in the masking layer (30) to form an opening (21) exposing a contact area (11) of the device region (3,4) and depositing electrically conductive material, for example tungsten, to form a conductive pillar (40) within the opening (21) in contact with the contact area (11). The organic layer (20) is then removed so as to expose the conductive pillar (40), a layer 50 of insulating material is provided over the pillar, the insulating layer is etched to expose a top surface of the pillar and electrically conductive material deposited to contact the pillar (40).

    摘要翻译： 通过施加可流动的有机材料以形成有机物，将电连接提供给由绝缘区域（12a，12b，9）和相邻的半导体主体（1）的一个主表面（1a）限定的器件区域（3,4） 在一个主表面（1a）上的层（20），在有机层（20）上限定掩模层（30），相对于下面的器件和绝缘区域通过窗口（31）选择性地蚀刻有机层 ）以形成暴露所述器件区域（3,4）的接触区域（11）并且沉积导电材料（例如钨）的开口（21），以形成导电柱（40）内的导电柱（40） 所述开口（21）与所述接触区域（11）接触。 然后去除有机层（20）以暴露导电柱（40），在柱上方提供绝缘材料层50，蚀刻绝缘层以暴露柱的顶表面并沉积导电材料 以接触支柱（40）。

    Camera module and manufacturing method for such a camera module
    4.
    发明申请
    Camera module and manufacturing method for such a camera module 审中-公开
    相机模块及其制造方法

    公开(公告)号：US20070126912A1

    公开(公告)日：2007-06-07

    申请号：US10577295

    申请日：2004-10-19

    申请人： Leendert De Bruin ,  Arjen Van Der Sijde

    发明人： Leendert De Bruin ,  Arjen Van Der Sijde

    IPC分类号： H04N5/225

    CPC分类号： H04N5/2254 ,  H01L31/0203 ,  H01L31/02325 ,  H04N5/2253

    摘要： The invention relates to a camera module (10) which comprises a semiconductor housing (1) that contains a solid-state image sensor (2) with a radiation-sensitive surface area (3), and an optical element (4) located above the solid-state sensor (2) and which forms a shield against laterally scattered radiation, comprising a disk-shaped body with a primary radiation-opaque area and a secondary radiation-transparent area located within the primary area, of which a surface close to the sensor (2) is smaller than a surface more remote from the sensor (2). According to the invention the optical element (4) comprises at least one plate (4) of transparent material of which two sides are covered with a radiation-opaque layer (41,42) which is provided with an aperture, in which the aperture in the layer (41) close to the sensor (2) has a smaller surface than the aperture in the layer (42) located remote from the sensor (2), and in which the primary and secondary areas are defined respectively by portions of the at least one plate (40) sandwiched between the opaque layers (41,42) and the apertures therein. Such a module (10) is particularly well-suited to wafer-scale manufacturing. The invention also comprises a method for manufacturing such a module (10).

    摘要翻译： 本发明涉及一种相机模块（10），其包括含有具有辐射敏感表面积（3）的固态图像传感器（2）的半导体外壳（1）和位于 固体传感器（2），并且其形成防侧向散射辐射的屏蔽，包括具有主辐射不透明区域的盘形主体和位于主要区域内的次要辐射透明区域，其中接近 传感器（2）小于远离传感器（2）的表面。 根据本发明，光学元件（4）包括至少一个透明材料板（4），其两侧被不透光层（41,42）覆盖，所述不透光层设置有孔，其中孔 靠近传感器（2）的层（41）具有比位于远离传感器（2）的层（42）中的开口小的表面，并且其中主区域和次区域分别由位于 夹在不透明层（41,42）之间的至少一个板（40）和其中的孔。 这种模块（10）特别适用于晶片级制造。 本发明还包括一种用于制造这种模块（10）的方法。

    Camera device, method of manufacturing a camera device, wafer scale package
    6.
    发明申请
    Camera device, method of manufacturing a camera device, wafer scale package 审中-公开
    相机装置，制造相机装置的方法，晶片级封装

    公开(公告)号：US20070275505A1

    公开(公告)日：2007-11-29

    申请号：US11708823

    申请日：2007-02-21

    申请人： Edwin Wolterink ,  Gerardus Dohmen ,  Aloysius Sander ,  Arjen Van Der Sijde ,  Leendert De Bruin ,  Erik Groot ,  Anton Van Arendonk

    发明人： Edwin Wolterink ,  Gerardus Dohmen ,  Aloysius Sander ,  Arjen Van Der Sijde ,  Leendert De Bruin ,  Erik Groot ,  Anton Van Arendonk

    IPC分类号： H01L21/00

    CPC分类号： H04N5/2254 ,  G02B13/001 ,  G02B13/006 ,  G02B13/0085 ,  H01L27/14618 ,  H01L27/14625 ,  H01L27/14627 ,  H01L2924/0002 ,  H04N5/2257 ,  H01L2924/00

    摘要： The invention relates to a camera device and a method for manufacturing such a device. The camera device comprises an image capturing element, a lens element for imaging an object at the image capturing element and a spacer means for maintaining a predetermined distance along the main optical axis through the lens and the image capturing element, and lens substrate for carrying the lens wherein the spacer means comprises an adhesive layer. This enables a mass manufacturing process wherein parts of the individual camera elements can be manufactured in manifold on different substrates, after which the different substrates are stacked, aligned and joined via adhesive layers. In the manufacturing process the different distances between the plates and the wafers are adjusted and maintained via the spacer means comprising the adhesive layers. From the stack individual camera devices are sawn out.

    摘要翻译： 本发明涉及相机装置及其制造方法。 相机装置包括图像拍摄元件，用于对图像拍摄元件进行成像的透镜元件和用于通过透镜和图像捕获元件沿主光轴保持预定距离的间隔装置，以及用于承载 透镜，其中间隔件包括粘合剂层。 这使得能够进行大量制造过程，其中各个相机元件的部分可以在不同基底上的歧管中制造，之后不同的基底通过粘合剂层堆叠，对准和接合。 在制造过程中，板和晶片之间的不同距离通过包括粘合剂层的间隔装置进行调节和维持。 从堆叠中单独的相机设备被锯出。

    Method of manufacturing a semiconductor device having conductive material provided in an insulating layer
    8.
    发明授权
    Method of manufacturing a semiconductor device having conductive material provided in an insulating layer 失效
    在绝缘层中制造具有导电材料的半导体器件的制造方法

    公开(公告)号：US5240879A

    公开(公告)日：1993-08-31

    申请号：US848806

    申请日：1992-03-10

    申请人： Leendert De Bruin

    发明人： Leendert De Bruin

    IPC分类号： H01L21/28 ,  C23C18/31 ,  H01L21/3213 ,  H01L21/768

    CPC分类号： H01L21/32134 ,  H01L21/76879

    摘要： A semiconductor body has a surface structure (10) with an insulating layer (11) through which is formed an opening (12) defining a side wall (13) of insulating material bounding an exposed surface area (14a) of a region (14). An activating layer (15) is provided on the exposed surface area (14a) and the side wall (13) of the opening (12), and electrically conductive material deposited on the activating layer (15) to form an electrically conductive region (16) in the opening (12). The activating layer is provided so that the material (15a) on the sidewall (13) has different composition from the material (15b) on the exposed surface area (14a) and is selectively etched to remove the material (15a) from the sidewall (13) of the opening (12) leaving only the activating layer portion (15b) on the surface area (14a) of the underlying region so that little or no deposition of the electrically conductive material occurs on the opening sidewall (13), thereby inhibiting sideways growth of the electrically conductive material and thus avoiding or at least reducing the possibility of voids being formed in the electrically conductive region.

    Method of forming a configuration of interconnections on a semiconductor device having a high integration density
    9.
    发明授权
    Method of forming a configuration of interconnections on a semiconductor device having a high integration density 失效
    在具有高积分密度的半导体器件上形成互连结构的方法

    公开(公告)号：US4936950A

    公开(公告)日：1990-06-26

    申请号：US339029

    申请日：1989-04-14

    申请人： Trung T. Doan ,  Leendert De Bruin ,  Malcolm K. Grief ,  Harald Godon

    发明人： Trung T. Doan ,  Leendert De Bruin ,  Malcolm K. Grief ,  Harald Godon

    IPC分类号： H01L21/3205 ,  H01L21/768 ,  H01L23/52

    CPC分类号： H01L21/76877

    摘要： A method of the kind consisting in that a contact is obtained with an active zone (11) carried by a semiconductor substrate (10) by means of conductive contact studs (18a) located in the contact openings (16c) of an isolating layer (12) and in that then a metallic configuration of interconnections (22) is formed establishing the conductive connection with the conductive contact studs (18a). A separation layer (13) is provided between the isolating layer (12) and the conductive layer (18), which can be eliminated selectively with respect to the isolating layer (12). Thus, the isolating layer (12) retains its original flatness and the conductive contact studs (18a) have an upper level (20) exceeding slightly the level (21) of the isolating layer (12), thus favoring the contact between these contact studs (18a) and the metallic configuration of interconnections (22). Application in microcircuits having a high integration density.

    摘要翻译： 一种方法，其特征在于，通过位于隔离层（12）的接触开口（16c）中的导电接触柱（18a），通过由半导体衬底（10）承载的有源区（11）获得接触， ），然后形成互连（22）的金属构造，以与导电触头柱（18a）建立导电连接。 隔离层（13）设置在隔离层（12）和导电层（18）之间，可以相对于隔离层（12）选择性去除。 因此，绝缘层（12）保持其原始平坦度，并且导电触头柱（18a）具有超过隔离层（12）的水平面（21）的上部水平（20），因此有利于这些触头柱之间的接触 （18a）和互连（22）的金属构造。 应用于具有高集成密度的微电路。