Methods of modifying oxide spacers
    1.
    发明授权
    Methods of modifying oxide spacers 有权
    修饰氧化物间隔物的方法

    公开(公告)号:US08513135B2

    公开(公告)日:2013-08-20

    申请号:US13246050

    申请日:2011-09-27

    IPC分类号: H01L21/302

    CPC分类号: H01L21/0337

    摘要: Methods for reducing line roughness of spacers and other features utilizing a non-plasma and non-wet etch fluoride processing technology are provided. Embodiments of the methods can be used for spacer or line reduction and/or smoothing the surfaces along the edges of such features through the reaction and subsequent removal of material.

    摘要翻译: 提供了利用非等离子体和非湿蚀刻氟化物处理技术减少间隔物的线粗糙度和其它特征的方法。 这些方法的实施方案可以用于通过反应和随后的材料去除而沿着这些特征的边缘的间隔物或线减少和/或平滑表面。

    Methods of Modifying Oxide Spacers
    2.
    发明申请
    Methods of Modifying Oxide Spacers 有权
    改性氧化物垫片的方法

    公开(公告)号:US20090017627A1

    公开(公告)日:2009-01-15

    申请号:US11777005

    申请日:2007-07-12

    IPC分类号: H01L21/311

    CPC分类号: H01L21/0337

    摘要: Methods for reducing line roughness of spacers and other features utilizing a non-plasma and non-wet etch fluoride processing technology are provided. Embodiments of the methods can be used for spacer or line reduction and/or smoothing the surfaces along the edges of such features through the reaction and subsequent removal of material.

    摘要翻译: 提供了利用非等离子体和非湿蚀刻氟化物处理技术减少间隔物的线粗糙度和其它特征的方法。 这些方法的实施方案可以用于通过反应和随后的材料去除而沿着这些特征的边缘的间隔物或线减少和/或平滑表面。

    Methods of Modifying Oxide Spacers
    3.
    发明申请
    Methods of Modifying Oxide Spacers 有权
    改性氧化物垫片的方法

    公开(公告)号:US20120015520A1

    公开(公告)日:2012-01-19

    申请号:US13246050

    申请日:2011-09-27

    IPC分类号: H01L21/308 H01L21/306

    CPC分类号: H01L21/0337

    摘要: Methods for reducing line roughness of spacers and other features utilizing a non-plasma and non-wet etch fluoride processing technology are provided. Embodiments of the methods can be used for spacer or line reduction and/or smoothing the surfaces along the edges of such features through the reaction and subsequent removal of material.

    摘要翻译: 提供了利用非等离子体和非湿蚀刻氟化物处理技术减少间隔物的线粗糙度和其它特征的方法。 这些方法的实施方案可以用于通过反应和随后的材料去除而沿着这些特征的边缘的间隔物或线减少和/或平滑表面。

    Methods of modifying oxide spacers
    4.
    发明授权
    Methods of modifying oxide spacers 有权
    修饰氧化物间隔物的方法

    公开(公告)号:US08026180B2

    公开(公告)日:2011-09-27

    申请号:US11777005

    申请日:2007-07-12

    IPC分类号: H01N21/302

    CPC分类号: H01L21/0337

    摘要: Methods for reducing line roughness of spacers and other features utilizing a non-plasma and non-wet etch fluoride processing technology are provided. Embodiments of the methods can be used for spacer or line reduction and/or smoothing the surfaces along the edges of such features through the reaction and subsequent removal of material.

    摘要翻译: 提供了利用非等离子体和非湿蚀刻氟化物处理技术减少间隔物的线粗糙度和其它特征的方法。 这些方法的实施方案可以用于通过反应和随后的材料去除而沿着这些特征的边缘的间隔物或线减少和/或平滑表面。

    Nano-crystal etch process
    8.
    发明授权
    Nano-crystal etch process 有权
    纳米晶体蚀刻工艺

    公开(公告)号:US08809198B2

    公开(公告)日:2014-08-19

    申请号:US12650029

    申请日:2009-12-30

    IPC分类号: H01L21/302

    摘要: A method for selectively removing nano-crystals on an insulating layer. The method includes providing an insulating layer with nano-crystals thereon; exposing the nano-crystals to a high density plasma comprising a source of free radical chlorine, ionic chlorine, or both to modify the nano-crystals; and removing the modified nano-crystals with a wet etchant.

    摘要翻译: 一种用于在绝缘层上选择性去除纳米晶体的方法。 该方法包括在其上提供具有纳米晶体的绝缘层; 将纳米晶体暴露于包含游离基氯源,离子氯或二者的高密度等离子体,以修饰纳米晶体; 并用湿蚀刻剂去除修饰的纳米晶体。