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    Low-k dielectric material
    1.
    发明申请
    Low-k dielectric material 审中-公开
    低k电介质材料

    公开(公告)号：US20070063188A1

    公开(公告)日：2007-03-22

    申请号：US10552737

    申请日：2004-04-13

    申请人： Juha Rantala ,  Jyri Paulasaari ,  Jarkko Pietikainen ,  Teemu Tormanen ,  Nigel Hacker ,  Nungavaram Viswanathan

    发明人： Juha Rantala ,  Jyri Paulasaari ,  Jarkko Pietikainen ,  Teemu Tormanen ,  Nigel Hacker ,  Nungavaram Viswanathan

    IPC分类号： H01L51/00 ,  C07F7/12

    CPC分类号： C07F7/12 ,  C09D183/04 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02345 ,  H01L21/3081 ,  H01L21/31144 ,  H01L21/3122 ,  H01L21/31633 ,  H01L21/32139 ,  H01L21/76801

    摘要： The present invention relates to thin films suitable as dielectrics in integrated circuits and for other similar applications and to methods for the production thereof. In particular, the invention concerns thin films comprising at least partially cross-linked siloxane structures obtainable by hydrolysis of one or more silicon compounds of the general formula R1—R2—Si—(X1)3, wherein X1 is a leaving group, R2 is a cycloalkyl having from 3 to 16 carbon atoms, an aryl having from 5 to 18 carbon atoms or a polycyclic alkyl group having from 7 to 16 carbon atoms, and R1 is a substituent of R2 selected from alkyl groups having from 1 to 4 carbon atoms, alkenyl groups having from 2 to 5 carbon atoms, alkynyl groups having from 2 to 5 carbon atoms, and aromatic groups having 5 or 6 carbon atoms, each of said groups being optionally substituted, and Cl and F.

    摘要翻译： 本发明涉及适用于集成电路和其他类似应用的电介质的薄膜及其生产方法。 特别地，本发明涉及包含至少部分交联的硅氧烷结构的薄膜，所述硅氧烷结构可通过一种或多种通式为R 1 -R 2 - 其中X 1是离去基团，R 2是具有（X 1）3个 3至16个碳原子的芳基，具有5至18个碳原子的芳基或具有7至16个碳原子的多环烷基，R 1是R 2的取代基， 选自具有1至4个碳原子的烷基，具有2至5个碳原子的烯基，具有2至5个碳原子的炔基，以及具有5或6个碳原子的芳族基团，每个所述基团是任选的 取代，Cl和F.