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    Low-k dielectric material
    1.
    发明申请
    Low-k dielectric material 审中-公开
    低k电介质材料

    公开(公告)号：US20070063188A1

    公开(公告)日：2007-03-22

    申请号：US10552737

    申请日：2004-04-13

    申请人： Juha Rantala ,  Jyri Paulasaari ,  Jarkko Pietikainen ,  Teemu Tormanen ,  Nigel Hacker ,  Nungavaram Viswanathan

    发明人： Juha Rantala ,  Jyri Paulasaari ,  Jarkko Pietikainen ,  Teemu Tormanen ,  Nigel Hacker ,  Nungavaram Viswanathan

    IPC分类号： H01L51/00 ,  C07F7/12

    CPC分类号： C07F7/12 ,  C09D183/04 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02345 ,  H01L21/3081 ,  H01L21/31144 ,  H01L21/3122 ,  H01L21/31633 ,  H01L21/32139 ,  H01L21/76801

    摘要： The present invention relates to thin films suitable as dielectrics in integrated circuits and for other similar applications and to methods for the production thereof. In particular, the invention concerns thin films comprising at least partially cross-linked siloxane structures obtainable by hydrolysis of one or more silicon compounds of the general formula R1—R2—Si—(X1)3, wherein X1 is a leaving group, R2 is a cycloalkyl having from 3 to 16 carbon atoms, an aryl having from 5 to 18 carbon atoms or a polycyclic alkyl group having from 7 to 16 carbon atoms, and R1 is a substituent of R2 selected from alkyl groups having from 1 to 4 carbon atoms, alkenyl groups having from 2 to 5 carbon atoms, alkynyl groups having from 2 to 5 carbon atoms, and aromatic groups having 5 or 6 carbon atoms, each of said groups being optionally substituted, and Cl and F.

    摘要翻译： 本发明涉及适用于集成电路和其他类似应用的电介质的薄膜及其生产方法。 特别地，本发明涉及包含至少部分交联的硅氧烷结构的薄膜，所述硅氧烷结构可通过一种或多种通式为R 1 -R 2 - 其中X 1是离去基团，R 2是具有（X 1）3个 3至16个碳原子的芳基，具有5至18个碳原子的芳基或具有7至16个碳原子的多环烷基，R 1是R 2的取代基， 选自具有1至4个碳原子的烷基，具有2至5个碳原子的烯基，具有2至5个碳原子的炔基，以及具有5或6个碳原子的芳族基团，每个所述基团是任选的 取代，Cl和F.

    METHOD FOR MAKING INTEGRATED CIRCUIT DEVICE
    5.
    发明申请
    METHOD FOR MAKING INTEGRATED CIRCUIT DEVICE 审中-公开
    制造集成电路设备的方法

    公开(公告)号：US20100317179A1

    公开(公告)日：2010-12-16

    申请号：US12382419

    申请日：2009-03-16

    申请人： Juha T. RANTALA ,  Jyri PAULASAARI ,  Janne KYLMA ,  Turo T. TORMANEN ,  Jarkko PIETIKAINEN ,  Nigel HACKER ,  Admir HADZIC

    发明人： Juha T. RANTALA ,  Jyri PAULASAARI ,  Janne KYLMA ,  Turo T. TORMANEN ,  Jarkko PIETIKAINEN ,  Nigel HACKER ,  Admir HADZIC

    IPC分类号： H01L21/28 ,  H01L21/768

    CPC分类号： C09D183/14 ,  C08G77/50 ,  H01B3/46 ,  H01L21/02126 ,  H01L21/02282 ,  H01L21/3122 ,  H01L21/76822 ,  H01L21/76837 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/12044 ,  Y10T428/31663 ,  H01L2924/00

    摘要： A method for making an integrated circuit device by: forming a plurality of transistors on a semiconductor substrate; forming multilayer interconnects by depositing a layer of metal; patterning the metal layer; depositing a first dielectric material, depositing a second dielectric material, patterning the first and second dielectric materials; and depositing a via filling metal material into the patterned areas; or, alternatively, by forming transistors on a substrate; depositing one of an electrically insulating or electrically conducting material; patterning said one of an electrically insulating or electrically conducting material; and depositing the other of the electrically insulating or electrically conducting material, so as to form a layer over said transistors having both electrically insulating and electrically conducting portions; wherein the first dielectric material, which is an organosiloxane material, and the electrically insulating material each has a carbon to silicon ratio of 1.5 to 1 or more.

    摘要翻译： 一种制造集成电路器件的方法，包括：在半导体衬底上形成多个晶体管; 通过沉积一层金属形成多层互连; 图案化金属层; 沉积第一电介质材料，沉积第二介电材料，图案化第一和第二电介质材料; 以及将通孔填充金属材料沉积到图案化区域中; 或者，通过在衬底上形成晶体管; 沉积电绝缘或导电材料之一; 图案化所述电绝缘或导电材料之一; 以及沉积所述电绝缘或导电材料中的另一个，以便在所述晶体管上形成具有电绝缘和导电部分的层; 其中作为有机硅氧烷材料的第一介电材料和电绝缘材料各自具有1.5至1或更大的碳硅比。

    Method of synthesizing siloxane monomers and use thereof
    7.
    发明授权
    Method of synthesizing siloxane monomers and use thereof 有权
    硅氧烷单体的合成方法及其用途

    公开(公告)号：US09458183B2

    公开(公告)日：2016-10-04

    申请号：US14126446

    申请日：2012-06-14

    申请人： Jyri Paulasaari

    发明人： Jyri Paulasaari

    IPC分类号： C07F7/18 ,  C07F7/08 ,  C08G77/04 ,  C08G77/12 ,  C08G77/14 ,  C08G77/00

    CPC分类号： C07F7/0874 ,  C07F7/0838 ,  C07F7/089 ,  C07F7/0896 ,  C07F7/1804 ,  C07F7/188 ,  C07F7/1892 ,  C08G77/045 ,  C08G77/12 ,  C08G77/14 ,  C08G77/80

    摘要： A method for preparation and polymerization of siloxane monomers of Formula I is presented. The synthesis includes the selective reaction between silanol containing unit and alkoxy containing units in the presence of basic catalyst. The siloxane monomers of the invention can be used for preparation of siloxane polymers with good flexibility and cracking threshold, and functional sites, useful for applications requiring low metal content in semiconductor industry.

    摘要翻译： 提出了制备和聚合式I的硅氧烷单体的方法。 该合成包括在碱性催化剂存在下，含硅烷醇单元和含烷氧基的单元之间的选择性反应。 本发明的硅氧烷单体可用于制备具有良好柔软性和裂化阈值的硅氧烷聚合物，以及可用于半导体工业中低金属含量的应用的功能部位。

    High silicon content siloxane polymers for integrated circuits
    8.
    发明授权
    High silicon content siloxane polymers for integrated circuits 有权
    高含硅硅氧烷聚合物用于集成电路

    公开(公告)号：US08133965B2

    公开(公告)日：2012-03-13

    申请号：US12071500

    申请日：2008-02-21

    申请人： Juha T. Rantala ,  Thomas Gädda ,  Jyri Paulasaari

    发明人： Juha T. Rantala ,  Thomas Gädda ,  Jyri Paulasaari

    IPC分类号： C08G77/20

    CPC分类号： H01L21/3122 ,  C08G77/06 ,  C08G77/16 ,  C08G77/20 ,  C08G77/70 ,  C09D183/04 ,  H01B3/46 ,  H01L21/02126 ,  H01L21/02282 ,  Y10T428/31663

    摘要： Thin films are disclosed that are suitable as thin films in IC's and for other similar applications. In particular, the invention concerns thin films comprising compositions obtainable by hydrolysis of two or more silicon compounds, which yield an at least partially cross-linked siloxane structure. The invention also concerns a method for producing such films by preparing siloxane compositions by hydrolysis of suitable reactants, by applying the hydrolyzed compositions on a substrate in the form of a thin layer and by curing the layer to form a high silicon content film.

    摘要翻译： 公开了适用于IC中的薄膜和其它类似应用的薄膜。 特别地，本发明涉及包含通过水解两种或更多种硅化合物获得的组合物的薄膜，其产生至少部分交联的硅氧烷结构。 本发明还涉及通过将水解的组合物以薄层的形式施加在基材上并通过固化该层以形成高硅含量的膜而通过水解合适的反应物制备硅氧烷组合物来生产这种膜的方法。