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    Projection exposure method and projection exposure system therefor
    2.
    发明授权
    Projection exposure method and projection exposure system therefor 有权
    投影曝光方法和投影曝光系统

    公开(公告)号：US08248578B2

    公开(公告)日：2012-08-21

    申请号：US12410640

    申请日：2009-03-25

    申请人： Julian Kaller ,  Toralf Gruner

    发明人： Julian Kaller ,  Toralf Gruner

    IPC分类号： G03B27/52

    CPC分类号： G03F7/70933 ,  G03F7/70191 ,  G03F7/70575 ,  G03F7/70941

    摘要： In a projection exposure method, primary radiation having a center wavelength λ is generated and guided through an illumination system along an illumination path and through a projection system along a projection path. The center wavelength is varied within a wavelength variation range Δλ having a lower limit λMIN≦λ and an upper limit λMAX≧λ. A specific absorption coefficient k(λ) of at least one gaseous absorbent species selected from the group consisting of oxygen (O2), ozone (O3) and water vapor (H2O) present in at least one gas-filled space along at least one of the illumination path and the projection path varies between a minimum absorption coefficient kMIN and a maximum absorption coefficient kMAX within the wavelength variation range such that an absorption ratio (kMAX/kMIN) exceeds 10. A concentration of the absorbent species within the gas-filled space is controlled such that an overall absorption variation effected by the absorbent species for all rays running along differing ray paths towards the image field is maintained below a predetermined absorption variation threshold value.

    摘要翻译： 在投影曝光方法中，产生具有中心波长λ的一次辐射并沿着照明路径通过照明系统并沿着投影路径通过投影系统。 中心波长在具有下限λMIN＆nlE;λ和上限λMAX≥λ的波长变化范围＆Dgr;λ内变化。 至少一种选自氧（O 2），臭氧（O 3）和水蒸汽（H 2 O）的气体吸收物质的比吸收系数k（λ）存在于至少一个气体填充空间中， 照射路径和投影路径在波长变化范围内的最小吸收系数kMIN和最大吸收系数kMAX之间变化，使得吸收比（kMAX / kMIN）超过10。气体填充空间内的吸收物质的浓度 被控制为使得沿着沿着不同光线路朝着图像场行进的所有射线的吸收物质的整体吸收变化保持在预定吸收变化阈值以下。

    Method for stress-adjusted operation of a projection exposure system and corresponding projection exposure system
    3.
    发明授权
    Method for stress-adjusted operation of a projection exposure system and corresponding projection exposure system 有权
    投影曝光系统和相应投影曝光系统的应力调整操作方法

    公开(公告)号：US09086637B2

    公开(公告)日：2015-07-21

    申请号：US13590673

    申请日：2012-08-21

    申请人： Bernhard Kneer ,  Markus Deguenther ,  Toralf Gruner

    发明人： Bernhard Kneer ,  Markus Deguenther ,  Toralf Gruner

    IPC分类号： G03B27/54 ,  G03B27/42 ,  G03F7/20

    CPC分类号： G03F7/70191 ,  G03F7/70116 ,  G03F7/70341 ,  G03F7/70558 ,  G03F7/7085

    摘要： A projection exposure system and a method for operating a projection exposure system for microlithography with an illumination system are disclosed. The illumination system includes at least one variably adjustable pupil-defining element. The illumination stress of at least one optical element of the projection exposure system is determined automatically in the case of an adjustment of the at least one variably adjustable pupil-defining element. From the automatically determined illumination stress, the maximum radiant power of the light source is set or determined and/or in which an illumination system is provided with which different illumination settings can be made. Usage of the projection exposure system is recorded and, from the history of the usage, at least one state parameter of at least one optical element of the projection exposure system is determined.

    摘要翻译： 公开了一种用于利用照明系统操作用于微光刻的投影曝光系统的投影曝光系统和方法。 所述照明系统包括至少一个可变地调整的光瞳限定元件。 在调整至少一个可变瞳孔限定元件的情况下，自动确定投影曝光系统的至少一个光学元件的照明应力。 根据自动确定的照明应力，设置或确定光源的最大辐射功率，和/或其中提供可以进行不同照明设置的照明系统。 记录投影曝光系统的使用，并且根据使用历史确定投影曝光系统的至少一个光学元件的至少一个状态参数。

    Method and system for correcting image changes
    5.
    发明授权
    Method and system for correcting image changes 有权
    用于校正图像变化的方法和系统

    公开(公告)号：US08325323B2

    公开(公告)日：2012-12-04

    申请号：US12361842

    申请日：2009-01-29

    申请人： Olaf Conradi ,  Toralf Gruner

    发明人： Olaf Conradi ,  Toralf Gruner

    IPC分类号： G03F7/20

    CPC分类号： G03F7/70891 ,  G03F7/70258

    摘要： The disclosure relates to a method for compensating image errors, generated by intensity distributions in optical systems, such as in projection lens arrays of microlithography systems, and to respective optical systems, such as projection lens arrays of microlithography systems.

    摘要翻译： 本公开涉及一种用于补偿由光学系统中的强度分布产生的图像误差的方法，例如在微光刻系统的投影透镜阵列中，以及相应的光学系统，例如微光刻系统的投影透镜阵列。

    CATADIOPTRIC PROJECTION OBJECTIVE
    7.
    发明申请
    CATADIOPTRIC PROJECTION OBJECTIVE 有权
    目标投影目标

    公开(公告)号：US20110075121A1

    公开(公告)日：2011-03-31

    申请号：US12748862

    申请日：2010-03-29

    申请人： Alexander Epple ,  Toralf Gruner ,  Ralf Mueller

    发明人： Alexander Epple ,  Toralf Gruner ,  Ralf Mueller

    IPC分类号： G03B27/72 ,  G02B17/06

    CPC分类号： G02B13/143 ,  G02B17/0892 ,  G03F7/70225

    摘要： Catadioptric projection objective (1) for microlithography for imaging an object field (3) in an object plane (5) onto an image field (7) in an image plane (9), including a first partial objective (11) imaging the object field onto a first real intermediate image (13), a second partial objective (15) imaging the first intermediate image onto a second real intermediate image (17) and a third partial objective (19) imaging the second intermediate image onto the image field (7). The second partial objective (15) has exactly one concave mirror (21) and at least one lens (23). The minimum distance between an optically utilized region of the concave mirror (21) and an optically utilized region of a surface (25)—facing the concave mirror—of a lens (23) adjacent to the concave mirror is greater than 10 mm.

    摘要翻译： 用于微光刻的反折射投影物镜（1），用于将物平面（5）中的物场（3）成像到图像平面（9）中的图像场（7），包括对物场进行成像的第一部分物镜（11） 到第一实际中间图像（13），将第一中间图像成像到第二实际中间图像（17）上的第二部分目标（15）和将第二中间图像成像到图像场（7）上的第三部分目标（19） ）。 第二部分物镜（15）具有正好一个凹面镜（21）和至少一个透镜（23）。 凹面镜（21）的光学利用区域与与凹面镜相邻的透镜（23）的凹面镜的表面（25）的光学利用区域之间的最小距离大于10mm。

    OPTICAL SYSTEM OF A MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS
    10.
    发明申请
    OPTICAL SYSTEM OF A MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS 有权
    微波投影曝光装置的光学系统

    公开(公告)号：US20100201960A1

    公开(公告)日：2010-08-12

    申请号：US12765285

    申请日：2010-04-22

    申请人： Joerg Tschischgale ,  Toralf Gruner

    发明人： Joerg Tschischgale ,  Toralf Gruner

    IPC分类号： G03B27/68 ,  G01B9/00 ,  G01B9/02 ,  G03B27/54

    CPC分类号： G03F7/70591 ,  G03B13/00 ,  G03F7/70266

    摘要： In a method for improving imaging properties of an illumination system or a projection objective of a microlithographic projection exposure apparatus, which comprises an optical element having a surface, the shape of the surface is measured directly at various points. To this end, a measuring beam is directed on the points, and the reflected or refracted beam is measured, e.g. using an interferometer. Based on deviations of the measured shape from a target shape, corrective measures are derived so that the imaging errors of the optical system are improved. The corrective measures may comprise a change in the position or the shape of the optical element being analyzed, or another optical element of the optical system. The target shape of the surface may, for example, be determined so that the optical element at least partially corrects imaging errors caused by other optical elements.

    摘要翻译： 在用于改善包括具有表面的光学元件的微光刻投影曝光装置的照明系统或投影物镜的成像特性的方法中，直接在各个点测量表面的形状。 为此，测量光束被引导到这些点上，并且测量反射或折射的光束。 使用干涉仪。 基于测量形状与目标形状的偏差，导出校正措施，使得光学系统的成像误差得到改善。 校正措施可以包括被分析的光学元件的位置或形状的改变，或光学系统的另一个光学元件的变化。 例如，可以确定表面的目标形状，使得光学元件至少部分地校正由其它光学元件引起的成像误差。