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    Direct patterning of silicon by photoelectrochemical etching
    1.
    发明授权
    Direct patterning of silicon by photoelectrochemical etching 有权
    通过光电化学蚀刻直接图案化硅

    公开(公告)号：US07433811B2

    公开(公告)日：2008-10-07

    申请号：US10838859

    申请日：2004-05-04

    申请人： Jun Gao ,  Michael J. Sailor ,  Sangeeta Bhatia ,  Christopher Flaim

    发明人： Jun Gao ,  Michael J. Sailor ,  Sangeeta Bhatia ,  Christopher Flaim

    IPC分类号： G06F17/50 ,  C23C20/00

    CPC分类号： B81C1/00515 ,  B81C2201/0114 ,  B81C2201/0115 ,  C25F3/12 ,  C25F3/14 ,  H01L21/3063

    摘要： The invention is directed to methods for direct patterning of silicon. The invention provides the ability to fabricate complex surfaces in silicon with three dimensional features of high resolution and complex detail. The invention is suitable, for example, for use in soft lithography as embodiments of the invention can quickly create a master for use in soft lithography. In an embodiment of the invention, electrochemical etching of silicon, such as a silicon wafer, for example, is conducted while at least a portion of the silicon surface is exposed to an optical pattern. The etching creates porous silicon in the substrate, and removal of the porous silicon layer leaves a three-dimensional structure correlating to the optical pattern.

    摘要翻译： 本发明涉及直接图案化硅的方法。 本发明提供了在硅中制造具有高分辨率和复杂细节的三维特征的复杂表面的能力。 本发明适用于例如在软光刻中使用，因为本发明的实施例可以快速地创建用于软光刻的母版。 在本发明的一个实施例中，例如硅的电化学蚀刻被进行，同时硅表面的至少一部分暴露于光学图案。 蚀刻在衬底中产生多孔硅，并且去除多孔硅层留下与光学图案相关的三维结构。

    Direct patterning of silicon by photoelectrochemical etching
    2.
    发明申请
    Direct patterning of silicon by photoelectrochemical etching 有权
    通过光电化学蚀刻直接图案化硅

    公开(公告)号：US20050009374A1

    公开(公告)日：2005-01-13

    申请号：US10838859

    申请日：2004-05-04

    申请人： Jun Gao ,  Michael Sailor ,  Sangeeta Bhatia ,  Christopher Flaim

    发明人： Jun Gao ,  Michael Sailor ,  Sangeeta Bhatia ,  Christopher Flaim

    IPC分类号： B81C1/00 ,  C25F3/12 ,  C25F3/14 ,  H01L21/26 ,  H01L21/3063

    CPC分类号： B81C1/00515 ,  B81C2201/0114 ,  B81C2201/0115 ,  C25F3/12 ,  C25F3/14 ,  H01L21/3063

    摘要： The invention is directed to methods for direct patterning of silicon. The invention provides the ability to fabricate complex surfaces in silicon with three dimensional features of high resolution and complex detail. The invention is suitable, for example, for use in soft lithography as embodiments of the invention can quickly create a master for use in soft lithography. In an embodiment of the invention, electrochemical etching of silicon, such as a silicon wafer, for example, is conducted while at least a portion of the silicon surface is exposed to an optical pattern. The etching creates porous silicon in the substrate, and removal of the porous silicon layer leaves a three-dimensional structure correlating to the optical pattern.

    摘要翻译： 本发明涉及直接图案化硅的方法。 本发明提供了在硅中制造具有高分辨率和复杂细节的三维特征的复杂表面的能力。 本发明适用于例如在软光刻中使用，因为本发明的实施例可以快速地创建用于软光刻的母版。 在本发明的一个实施例中，例如硅的电化学蚀刻被进行，同时硅表面的至少一部分暴露于光学图案。 蚀刻在衬底中产生多孔硅，并且去除多孔硅层留下与光学图案相关的三维结构。