摘要:
Polymers comprising fluorinated vinyl phenol units and having acid labile groups partially introduced are novel. Using such polymers, resist compositions featuring transparency to excimer laser and alkali solubility are obtained.
摘要:
An acrylic resin containing hexafluoroisopropanol units has high transmittance to VUV radiation. A resist composition using the resin as a base polymer has high transparency, substrate adhesion, alkali developability and acid-elimination capability and is suited for lithographic microprocessing.
摘要:
A base polymer having incorporated an ester group having a fluorinated alicyclic unit is provided. A resist composition comprising the polymer is sensitive to high-energy radiation, and has excellent sensitivity at a wavelength of less than 200 nm, significantly improved transparency by virtue of the fluorinated alicyclic units incorporated as well as satisfactory plasma etching resistance. The resist composition has a low absorption at the exposure wavelength of a F2 laser and is ideal as a micropatterning material in VLSI fabrication.
摘要:
An acrylate resin containing fluorinated alkyl groups in ester side chains has high transmittance to VUV radiation. A resist composition using the resin as a base polymer is sensitive to high-energy radiation, has excellent sensitivity and resolution, and is suited for lithographic microprocessing.
摘要:
A resist composition comprising (A) a polymer comprising recurring units having an alicyclic hydrocarbon backbone to which a carboxylate moiety capable of generating carboxylic acid when decomposed under acidic conditions is attached through a C1-C20 alkylene spacer, (B) a photoacid generator, and (C) an organic solvent is sensitive to high-energy radiation, and has excellent sensitivity and resolution at a wavelength below 180 nm, and good plasma etching resistance. Because these features of the inventive resist composition enable its use particularly as a resist at the exposure wavelength of a F2 excimer laser, a finely defined pattern can easily be formed, making the resist ideal as a micropatterning material in VLSI fabrication.
摘要:
A copolymer of an acrylate monomer containing fluorine at &agr;-position with a norbornene derivative is highly transparent to VUV radiation and resistant to dry etching. A resist composition using the resin as a base polymer is sensitive to high-energy radiation below 200 nm, has excellent sensitivity, and is suited for lithographic microprocessing.
摘要:
A polymer having fluorinated vinyl phenol units copolymerized with acrylonitrile units has high transmittance to VUV radiation. A resist composition using the polymer as a base resin has high sensitivity and resolution to high-energy radiation and good plasma etching resistance and is suited for lithographic microprocessing.
摘要:
A resist composition comprising a blend of a cyclic polymer having alcoholic groups as soluble groups and a polymer having carboxyl or hexafluoroalcohol groups whose hydrogen atoms are replaced by acid labile groups as a base resin forms a resist film which is improved in transparency, alkali dissolution contrast and plasma etching resistance.
摘要:
A chemically amplified resist composition comprising (A) a polymer comprising recurring units containing at least one fluorine atom, (B) a compound of formula (1) wherein R1 and R2 are H, F or alkyl or fluorinated alkyl, at least one of R1 and R2 contains at least one fluorine atom, R3 is a single bond or alkylene, R4 is a n-valent aromatic or cyclic diene group, R5 is H or C(═O)R6, R6 is H or methyl, and n is 2, 3 or 4, (C) an organic solvent, and (D) a photoacid generator is sensitive to high-energy radiation and has improved sensitivity and transparency at a wavelength of less than 200 nm.
摘要:
A resist composition comprising a polymer containing vinyl sulfonate units having fluorinated hydrophilic groups as a base resin has excellent transparency, substrate adhesion and developer penetrability as well as plasma etching resistance, and is suited for lithographic microprocessing.