公开(公告)号：US20130079554A1

公开(公告)日：2013-03-28

申请号：US13611927

申请日：2012-09-12

申请人： Jun Yang ,  Peter V. Bonnesen ,  Kunlun Hong

发明人： Jun Yang ,  Peter V. Bonnesen ,  Kunlun Hong

IPC分类号： C07C51/36

CPC分类号： C07C51/36 ,  C07B2200/05 ,  C07C57/04

摘要： A method for synthesizing a deuterated acrylate of the Formula (1), the method comprising: (i) deuterating a propiolate compound of Formula (2) to a methyne-deuterated propiolate compound of Formula (3) in the presence of a base and D2O: and (ii) reductively deuterating the methyne-deuterated propiolate compound of Formula (3) in a reaction solvent in the presence of deuterium gas and a palladium-containing catalyst to afford the deuterated acrylate of the Formula (1). The resulting deuterated acrylate compounds, derivatives thereof, and polymers derived therefrom are also described.

摘要翻译： 一种用于合成式（1）的氘化丙烯酸酯的方法，所述方法包括：（i）在碱和D 2 O存在下将式（2）的丙炔酸酯化合物肟化为式（3）的甲基氘代丙炔酸酯化合物 ：和（ii）在氘气和含钯催化剂的存在下，在反应溶剂中还原式肟化式（3）的甲炔 - 氘代丙炔酸酯化合物，得到式（1）的氘代丙烯酸酯。 还描述了所得到的氘化丙烯酸酯化合物，其衍生物和由其衍生的聚合物。

公开(公告)号：US08829238B2

公开(公告)日：2014-09-09

申请号：US13611927

申请日：2012-09-12

申请人： Jun Yang ,  Peter V. Bonnesen ,  Kunlun Hong

发明人： Jun Yang ,  Peter V. Bonnesen ,  Kunlun Hong

IPC分类号： C07C51/36

CPC分类号： C07C51/36 ,  C07B2200/05 ,  C07C57/04

摘要： A method for synthesizing a deuterated acrylate of the Formula (1), the method comprising: (i) deuterating a propiolate compound of Formula (2) to a methyne-deuterated propiolate compound of Formula (3) in the presence of a base and D2O: and (ii) reductively deuterating the methyne-deuterated propiolate compound of Formula (3) in a reaction solvent in the presence of deuterium gas and a palladium-containing catalyst to afford the deuterated acrylate of the Formula (1). The resulting deuterated acrylate compounds, derivatives thereof, and polymers derived therefrom are also described.

摘要翻译： 一种用于合成式（1）的氘化丙烯酸酯的方法，所述方法包括：（i）在碱和D 2 O存在下将式（2）的丙炔酸酯化合物肟化为式（3）的甲基氘代丙炔酸酯化合物 ：和（ii）在氘气和含钯催化剂的存在下，在反应溶剂中还原式肟化式（3）的甲炔 - 氘代丙炔酸酯化合物，得到式（1）的氘代丙烯酸酯。 还描述了所得到的氘化丙烯酸酯化合物，其衍生物和由其衍生的聚合物。

公开(公告)号：US08658802B2

公开(公告)日：2014-02-25

申请号：US13553293

申请日：2012-07-19

申请人： Kunlun Hong ,  Jun Yang ,  Peter V. Bonnesen

发明人： Kunlun Hong ,  Jun Yang ,  Peter V. Bonnesen

IPC分类号： C07D213/06

CPC分类号： C07D213/16 ,  C07D213/127

摘要： Methods for synthesizing deuterated vinylpyridine compounds of the Formula (1), wherein the method includes: (i) deuterating an acyl pyridine of the Formula (2) in the presence of a metal catalyst and D2O, wherein the metal catalyst is active for hydrogen exchange in water, to produce a deuterated acyl compound of Formula (3); (ii) reducing the compound of Formula (3) with a deuterated reducing agent to convert the acyl group to an alcohol group, and (iii) dehydrating the compound produced in step (ii) with a dehydrating agent to afford the vinylpyridine compound of Formula (1). The resulting deuterated vinylpyridine compounds are also described.

摘要翻译： 用于合成式（1）的氘化乙烯基吡啶化合物的方法，其中所述方法包括：（i）在金属催化剂和D 2 O存在下使式（2）的酰基吡啶氘化，其中所述金属催化剂用于氢交换 在水中制备式（3）的氘代酰基化合物; （ii）用氘代还原剂还原式（3）的化合物以将酰基转化为醇基，和（ⅲ）用脱水剂将步骤（ⅱ）中生成的化合物脱水得到式（Ⅴ）的乙烯基吡啶化合物， （1）。 还描述了所得的氘代乙烯基吡啶化合物。

公开(公告)号：US20140024836A1

公开(公告)日：2014-01-23

申请号：US13553293

申请日：2012-07-19

申请人： Kunlun Hong ,  Jun Yang ,  Peter V. Bonnesen

发明人： Kunlun Hong ,  Jun Yang ,  Peter V. Bonnesen

IPC分类号： C07D213/16 ,  C07D213/127

CPC分类号： C07D213/16 ,  C07D213/127

摘要： Methods for synthesizing deuterated vinylpyridine compounds of the Formula (1), wherein the method includes: (i) deuterating an acyl pyridine of the Formula (2) in the presence of a metal catalyst and D2O, wherein the metal catalyst is active for hydrogen exchange in water, to produce a deuterated acyl compound of Formula (3); (ii) reducing the compound of Formula (3) with a deuterated reducing agent to convert the acyl group to an alcohol group, and (iii) dehydrating the compound produced in step (ii) with a dehydrating agent to afford the vinylpyridine compound of Formula (1). The resulting deuterated vinylpyridine compounds are also described.

摘要翻译： 用于合成式（1）的氘化乙烯基吡啶化合物的方法，其中所述方法包括：（i）在金属催化剂和D 2 O存在下使式（2）的酰基吡啶氘化，其中所述金属催化剂用于氢交换 在水中制备式（3）的氘代酰基化合物; （ii）用氘代还原剂还原式（3）的化合物以将酰基转化为醇基，和（ⅲ）用脱水剂将步骤（ⅱ）中生成的化合物脱水得到式（Ⅴ）的乙烯基吡啶化合物， （1）。 还描述了所得的氘代乙烯基吡啶化合物。

公开(公告)号：US20240052967A1

公开(公告)日：2024-02-15

申请号：US17983667

申请日：2022-11-09

申请人： Guochen Pan ,  Jun Yang ,  Hong Wang

发明人： Guochen Pan ,  Jun Yang ,  Hong Wang

IPC分类号： F16M11/04 ,  F16M11/32 ,  G03B17/56

CPC分类号： F16M11/04 ,  F16M11/32 ,  G03B17/561

摘要： The invention discloses an adjusting structure and a stand for photographic apparatus. The adjusting structure includes a first adjusting rod, a first connecting member, a second connecting member, a second adjusting rod, a first locking member and a supporting member. The first connecting member is fixedly connected with the first adjusting rod, the second connecting member is rotationally connected with the first connecting member and is provided with a first mounting hole, wherein the second connecting member can be rotated relative to the first connecting member to adjust an included angle with the first connecting member, the second adjusting rod is penetrated through the first mounting hole and movablely connected with the first adjusting rod, and can be moved relative to the first adjusting rod along a straight direction.

公开(公告)号：US10660217B2

公开(公告)日：2020-05-19

申请号：US15993351

申请日：2018-05-30

申请人： Jun Yang ,  Tengyuan Zhang ,  Qiuquan Guo

发明人： Jun Yang ,  Tengyuan Zhang ,  Qiuquan Guo

IPC分类号： C23C18/16 ,  C23C18/40 ,  C23C18/30 ,  C23C18/28 ,  C23C18/20 ,  H05K3/42 ,  H05K1/03 ,  H05K3/12 ,  H05K1/09 ,  H05K3/18 ,  H05K3/38 ,  H05K1/18

摘要： Provided herein is a method to printed electronics, and more particularly related to printed electronics on flexible, porous substrates. The method includes applying a coating compound comprising poly (4-vinylpyridine) (P4VP) and SU-8 dissolved in an organic alcohol solution to one or more surface of a flexible, porous substrate, curing the porous substrate at a temperature of at least 130° C. such that the porous substrate is coated with a layer of said coating compound, printing a jet of a transition metal salt catalyst solution onto one or more printing sides of the flexible, porous substrate to deposit a transition metal salt catalyst onto the one or more printing sides, and submerging the substrate in an electroless metal deposition solution to deposit the metal on the flexible, porous substrate, wherein the deposited metal induces the formation of one or more three-dimensional metal-fiber conductive structures within the flexible, porous substrate.

公开(公告)号：US10593554B2

公开(公告)日：2020-03-17

申请号：US15941839

申请日：2018-03-30

申请人： Jun Yang

发明人： Jun Yang

IPC分类号： H01L21/67 ,  H01L21/687 ,  G02F1/13 ,  H01L21/306 ,  H01L21/3105 ,  H01L21/683 ,  B24B37/10 ,  B24B37/005 ,  G05B19/418 ,  H01L21/66 ,  H01L21/02 ,  B24B37/20

摘要： A method and apparatus for within-wafer profile localized tuning is disclosed. In one aspect, the method includes providing a wafer attached to a rotating vacuum stage front side up, the wafer including a surface film with an incoming film thickness profile, providing a pad attached to a rotating head front side down, the head configured to sweep along a path, computing a film thickness removal amount based upon the incoming film thickness profile, and removing at least a portion of the surface film of the wafer based on the computed film thickness removal amount via a plurality of steps.

公开(公告)号：US20180226263A1

公开(公告)日：2018-08-09

申请号：US15941839

申请日：2018-03-30

申请人： Jun Yang

发明人： Jun Yang

IPC分类号： H01L21/3105 ,  H01L21/683 ,  H01L21/687 ,  G05B19/418 ,  B24B37/10 ,  B24B37/005

摘要： A method and apparatus for within-wafer profile localized tuning is disclosed. In one aspect, the method includes providing a wafer attached to a rotating vacuum stage front side up, the wafer including a surface film with an incoming film thickness profile, providing a pad attached to a rotating head front side down, the head configured to sweep along a path, computing a film thickness removal amount based upon the incoming film thickness profile, and removing at least a portion of the surface film of the wafer based on the computed film thickness removal amount via a plurality of steps.

公开(公告)号：US09748573B2

公开(公告)日：2017-08-29

申请号：US14236878

申请日：2012-08-03

申请人： Jun Yang ,  Pengfei Gao ,  Jingjun Zhang ,  Longjie Zhou

发明人： Jun Yang ,  Pengfei Gao ,  Jingjun Zhang ,  Longjie Zhou

IPC分类号： H01M4/36 ,  H01M4/38 ,  H01M4/04 ,  H01M4/62 ,  H01M4/583 ,  C01B33/00 ,  C01B33/06 ,  H01M4/587 ,  H01M4/1395 ,  H01M10/052

CPC分类号： H01M4/583 ,  C01B33/00 ,  C01B33/06 ,  H01M4/0428 ,  H01M4/0471 ,  H01M4/1395 ,  H01M4/364 ,  H01M4/366 ,  H01M4/386 ,  H01M4/587 ,  H01M4/625 ,  H01M10/052

摘要： A mesoporous silicon compound includes a mesoporous silicon phase, a metal silicide phase, and a carbon phase. The metal silicide is embedded in mesoporous silicon particles, the surfaces of which are coated with a carbon layer. A weight ratio of elemental silicon to the metal element is from 2:3 to 900:1. The pores of the mesoporous silicon particles have a size distribution from two nanometers to eighty nanometers.

公开(公告)号：US09663860B2

公开(公告)日：2017-05-30

申请号：US14005791

申请日：2012-03-17

申请人： Jun Yang ,  Pengfei Gao ,  Haiping Jia ,  Jiulin Wang ,  Yanna Nuli

发明人： Jun Yang ,  Pengfei Gao ,  Haiping Jia ,  Jiulin Wang ,  Yanna Nuli

IPC分类号： H01M4/36 ,  C23C18/12 ,  H01M4/133 ,  H01M4/134 ,  H01M4/1393 ,  H01M4/1395 ,  H01M10/052 ,  H01M4/38 ,  H01M4/587 ,  C23C16/26

CPC分类号： C23C18/1275 ,  C23C16/26 ,  H01M4/133 ,  H01M4/134 ,  H01M4/1393 ,  H01M4/1395 ,  H01M4/366 ,  H01M4/386 ,  H01M4/587 ,  H01M10/052

摘要： Disclosed in the invention are a silicon-carbon composite anode material for lithium ion batteries and a preparation method thereof The material consists of a porous silicon substrate and a carbon coating layer. The preparation method of the material comprises preparing a porous silicon substrate and a carbon coating layer. The silicon-carbon composite anode material for lithium ion batteries has the advantages of high reversible capacity, good cycle performance and good rate performance. The material respectively shows reversible capacities of 1,556 mAh, 1,290 mAh, 877 mAh and 474 mAh/g at 0.2 C, 1 C, 4 C and 15 C rates; the specific capacity remains above 1,500 mAh after 40 cycles at the rate of 0.2 C and the reversible capacity retention rate is up to 90 percent.