Abstract:
A system, device and related method are used to communicate data via a plurality of data lanes including a selected data lane. In a first mode of operation, payload data and related supplemental data are communicated via the plurality of data lanes including the selected data lane. In a second mode of operation, only payload data is communicated via the plurality of data lanes, except the selected data lane.
Abstract:
A system having a transmission unit transmitting an output data signal formed from output data and related error detection code and a corresponding receiving unit. The output data signal is pre-emphasized by a pre-emphasis driver in the transmission unit. The receiving unit includes an equalizer equalizing the received output data signal and an error detector analyzing the error detection code to determine whether a bit error is present in the received data. Upon successive data transmission failures either an equalization coefficient in the equalizer or a pre-emphasis coefficient in the pre-emphasis driver are changed.
Abstract:
A semiconductor memory device and an arrangement method thereof are disclosed. The semiconductor memory device comprises column selecting signal lines and global data IO signal lines arranged on the same layer in the same direction above a memory cell array; word lines and first local data IO signal lines arranged on a different layer from the column selecting signal lines above the memory cell array, in a perpendicular direction to the column selecting signal lines; and second local data IO signal lines arranged on a different layer from the column selecting signal lines and the word lines above the memory cell array, in the same direction as the first local data IO signal lines.
Abstract:
A memory system, memory, and memory system command protocol are disclosed. Within the memory system, a memory controller communicates a command to the memory, the command being selected from a set of commands including a write command and a plurality of non-write commands. A Hamming distance value calculated between a digital value indicating the write command and a digital value indicating any one of the plurality of non-write commands is greater than 1.
Abstract:
A memory system, memory, and memory system command protocol are disclosed. Within the memory system, a memory controller communicates a command to the memory, the command being selected from a set of commands including a write command and a plurality of non-write commands. A Hamming distance value calculated between a digital value indicating the write command and a digital value indicating any one of the plurality of non-write commands is greater than 1.
Abstract:
A method and an apparatus for connecting a network in a portable terminal. The method for connecting a network in a portable terminal includes searching a network from which a signal is received, receiving network identifying information from the searched network, retrieving connection information corresponding to the network identifying information, from network connection information stored in the portable terminal in advance, and setting the retrieved network connection information as the network connection information of the portable terminal.
Abstract:
A memory system including a memory controller and a memory and a related method are disclosed. The method includes communicating a command and error detection/correction (EDC) data associated with the command from the memory controller to the memory, decoding the command and executing an EDC operation related to the EDC data in parallel, and if the command is a write command, delaying execution of a write operation indicated by the write command until completion of the EDC operation, else immediately executing an operation indicated by the command without regard to completion of the EDC operation.
Abstract:
A memory device comprises a memory cell array comprising a plurality of memory blocks each comprising a plurality of memory cells and a control setting circuit. The control setting circuit divides the memory blocks into at least first and second groups based on whether each of the memory blocks comprises at least one substandard memory cell, and sets individually control parameters of the first and second groups. The substandard memory cells are identified based on test results of the memory cells with respect to at least one of the control parameters. Each memory block in the first group comprises at least one substandard memory cell, and each memory block in the second group comprises no substandard memory cell.
Abstract:
A memory cell array with open bit line structure includes a first sub memory cell array, a second sub memory cell array, a sense-amplifier/precharge circuit, first capacitors and second capacitors. The first sub memory cell array is activated in response to a first word line enable signal, and the second sub memory cell array is activated in response to a second word line enable signal. The sense-amplifier/precharge circuit is connected to the first sub memory cell array through first bit lines and to the second sub memory cell array through second bit lines, and the sense-amplifier/precharge circuit precharges the first bit lines and the second bit lines and amplifies data provided from the first sub memory cell array and the second sub memory cell array.
Abstract:
A circuit measuring the operating speed of a semiconductor memory chip in relation to a defined asynchronous access time is disclosed. The circuit includes a test signal path extending between a test input pad and a test output pad and is formed by a plurality of test signal path segments and at least one delay element associated with at least one of the plurality of test signal path segments, such that a delay time for a test signal communicated through the test signal path is indicative of the actual asynchronous access time for the semiconductor memory chip. Each one of the plurality of test signal path segments is either an interior test signal path segment or an exterior test signal path segment.