公开(公告)号：US08610129B2

公开(公告)日：2013-12-17

申请号：US13220232

申请日：2011-08-29

申请人： Jung-gyu Nam ,  Sang-cheol Park ,  Kyu-sik Kim ,  Young-jun Park

发明人： Jung-gyu Nam ,  Sang-cheol Park ,  Kyu-sik Kim ,  Young-jun Park

IPC分类号： H01L31/0256

CPC分类号： H01L27/14647 ,  H01L27/14609 ,  H01L27/14692 ,  H01L31/0322 ,  H01L31/101 ,  Y02E10/541

摘要： A stack-type image sensor using a compound semiconductor. The stack-type image sensor includes a stack of photoelectric conversion units which are sequentially arranged in a light incident direction and which absorb light in ascending order of a wavelength from shortest to longest.

摘要翻译： 使用化合物半导体的堆叠型图像传感器。 堆叠型图像传感器包括沿光入射方向依次布置并以从最短到最长的波长的升序吸收光的光电转换单元的堆叠。

公开(公告)号：US07816713B2

公开(公告)日：2010-10-19

申请号：US12053740

申请日：2008-03-24

申请人： Kyu-sik Kim ,  Sang-cheol Park ,  Young-jun Park ,  O-hyun Kwon ,  Jung-gyu Nam ,  Hye-suk Jo

发明人： Kyu-sik Kim ,  Sang-cheol Park ,  Young-jun Park ,  O-hyun Kwon ,  Jung-gyu Nam ,  Hye-suk Jo

IPC分类号： H01L31/062

CPC分类号： H01L27/307 ,  H01L27/14647 ,  H01L51/0036 ,  H01L51/0068 ,  H01L51/0071 ,  H01L51/0085

摘要： Provided is a CMOS image sensor that uses thiophene derivatives. The CMOS image sensor includes first through third photoelectric conversion units vertically and sequentially stacked on a semiconductor substrate. The first photoelectric conversion unit detects blue light and comprises a first electrode, a second electrode, and a p-type thiophene derivative layer between the first electrode and the second electrode.

摘要翻译： 提供了使用噻吩衍生物的CMOS图像传感器。 CMOS图像传感器包括垂直且顺序堆叠在半导体衬底上的第一至第三光电转换单元。 第一光电转换单元检测蓝光，并且包括在第一电极和第二电极之间的第一电极，第二电极和p型噻吩衍生物层。

公开(公告)号：US08163463B2

公开(公告)日：2012-04-24

申请号：US12040009

申请日：2008-02-29

申请人： Jin-baek Kim ,  Byung-ha Park ,  Kyu-sik Kim ,  Young-ung Ha ,  Su-min Kim

发明人： Jin-baek Kim ,  Byung-ha Park ,  Kyu-sik Kim ,  Young-ung Ha ,  Su-min Kim

IPC分类号： G03F7/004 ,  G03F7/20 ,  G03F7/30 ,  B41J2/05 ,  B41J2/16

CPC分类号： G03F7/038 ,  B41J2/1603 ,  B41J2/1631 ,  B41J2/1645 ,  G03F7/0385 ,  Y10S430/115 ,  Y10S430/122 ,  Y10S430/126

摘要： A photoresist composition including an oxetane-containing compound represented by Formula 1 or 2, an oxirane-containing compound represented by Formula 3 or 4, a photoinitiator, and a solvent, a method of forming a pattern using the photoresist composition, and an inkjet print head including a polymerization product of the photoresist composition. The photoresist composition provides a polymerization product which resists formation of cracks due to an inner stress, and has excellent heat tolerance, excellent chemical resistance, excellent adhesiveness, and excellent durability.

摘要翻译： 包含由式1或2表示的含氧杂环丁烷的化合物，由式3或4表示的含环氧乙烷的化合物，光引发剂和溶剂的光致抗蚀剂组合物，使用光致抗蚀剂组合物形成图案的方法和喷墨印刷 头包括光致抗蚀剂组合物的聚合产物。 光致抗蚀剂组合物提供抗内壁应力形成裂纹的聚合物，耐热性优异，耐化学性优异，粘合性优异，耐久性优异。

公开(公告)号：US07524610B2

公开(公告)日：2009-04-28

申请号：US11768632

申请日：2007-06-26

申请人： Kyu-sik Kim ,  Jin-baek Kim ,  Young-ung Ha ,  Byung-ha Park ,  Ji-young Park ,  Su-min Kim

发明人： Kyu-sik Kim ,  Jin-baek Kim ,  Young-ung Ha ,  Byung-ha Park ,  Ji-young Park ,  Su-min Kim

IPC分类号： G03C1/73 ,  G03F7/004 ,  G03F7/20 ,  G03F7/30 ,  C07D305/00

CPC分类号： C07D305/06 ,  C08L61/06 ,  G03F7/038 ,  Y10S430/115

摘要： An oxetane-containing compound, a photoresist composition including the same, a method of preparing patterns using the photoresist composition, and an inkjet print head including polymerization products of the oxetane-containing compound.

摘要翻译： 含有氧杂环丁烷的化合物，包含其的光致抗蚀剂组合物，使用光致抗蚀剂组合物制备图案的方法，以及包含含氧杂环丁烷化合物的聚合产物的喷墨打印头。

公开(公告)号：US20070026536A1

公开(公告)日：2007-02-01

申请号：US11447970

申请日：2006-06-07

申请人： Kyu-sik Kim ,  Bo-sung Kim ,  Jung-han Shin ,  Mun-pyo Hong

发明人： Kyu-sik Kim ,  Bo-sung Kim ,  Jung-han Shin ,  Mun-pyo Hong

IPC分类号： H01L21/00

CPC分类号： H01L51/10 ,  H01L51/0545 ,  H01L51/107

摘要： An organic thin film transistor for a liquid crystal display and a method of manufacturing an organic thin film transistor. The method of manufacturing an organic thin film transistor for a liquid crystal display comprises forming a gate conductive film pattern on a substrate; forming a gate insulating film on the substrate and the gate conductive film pattern; forming source and drain electrodes on the gate insulating film; forming an organic semiconductor thin film on an exposed surface of the gate insulating film and the source and drain electrodes; and forming a diamond-like-carbon thin film as an alignment film. A passivation film and the alignment film can both be provided using the diamond-like-carbon thin film.

摘要翻译： 一种用于液晶显示器的有机薄膜晶体管和一种制造有机薄膜晶体管的方法。 制造液晶显示器用有机薄膜晶体管的方法包括在基板上形成栅极导电膜图案; 在基板和栅极导电膜图案上形成栅极绝缘膜; 在栅极绝缘膜上形成源极和漏极; 在所述栅极绝缘膜和所述源极和漏极的暴露表面上形成有机半导体薄膜; 并形成类金刚石碳薄膜作为取向膜。 可以使用类金刚石碳薄膜来提供钝化膜和取向膜。

公开(公告)号：US20060134533A1

公开(公告)日：2006-06-22

申请号：US11295636

申请日：2005-12-07

申请人： O-gweon Seo ,  Kae-dong Back ,  Chang-seung Lee ,  Kyu-sik Kim ,  Duck-su Kim ,  Byoung-ho Cheong

发明人： O-gweon Seo ,  Kae-dong Back ,  Chang-seung Lee ,  Kyu-sik Kim ,  Duck-su Kim ,  Byoung-ho Cheong

IPC分类号： G03F1/00

CPC分类号： G02B5/003 ,  G02B1/11 ,  G02B3/0006 ,  G02B3/0018 ,  G03C1/00

摘要： A method of fabricating a one-way transparent optical system by which external light is effectively intercepted and internal light passes nearly without loss is provided. The method includes: forming a silver halide on a transparent substrate; aligning a mask in which a predetermined pattern is formed, on the transparent substrate and exposing the silver halide using the mask; developing and fixing the exposed silver halide and forming a plurality of light-absorbing materials on the transparent substrate; and forming protrusion structures having a shape of a convex lens shape for refracting incident light toward a corresponding light-absorbing material of the light-absorbing materials, on the transparent substrate on which the light-absorbing materials are formed.

公开(公告)号：US20060131147A1

公开(公告)日：2006-06-22

申请号：US11251804

申请日：2005-10-18

申请人： Che-heung Kim ,  Hyung-jae Shin ,  Soon-cheol Kweon ,  Kyu-sik Kim ,  Sang-hun Lee

发明人： Che-heung Kim ,  Hyung-jae Shin ,  Soon-cheol Kweon ,  Kyu-sik Kim ,  Sang-hun Lee

IPC分类号： H01H57/00 ,  H02N1/00

CPC分类号： H01H59/0009 ,  H01H2059/0054

摘要： A micro electro mechanical system switch and a method of fabricating the micro electro mechanical system switch. The micro electro mechanical system switch includes a substrate, a plurality of signal lines formed on the substrate and including switching contact points and a plurality of immovable electrodes formed among the signal lines on the substrate. A plurality of anchors protrude from the substrate to predetermined heights and support at least two actuating beams installed on an identical plane so as to move up and down. A connecting unit connects the at least two actuating beams. A support unit provided on the substrate supports the connecting unit and contacting plates are installed on lower surfaces of the at least two actuating beams so as to contact the switching contact points.

公开(公告)号：US20120193689A1

公开(公告)日：2012-08-02

申请号：US13205127

申请日：2011-08-08

申请人： Kyung-bae Park ,  Kyu-sik Kim ,  Yong-wan Jin ,  Woong Choi ,  Kwang-hee Lee ,  Do-hwan Kim

发明人： Kyung-bae Park ,  Kyu-sik Kim ,  Yong-wan Jin ,  Woong Choi ,  Kwang-hee Lee ,  Do-hwan Kim

IPC分类号： H01L31/113 ,  H01L31/18

CPC分类号： H01L27/307 ,  H01L23/585 ,  H01L27/1214 ,  H01L27/14609 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/14647 ,  H01L27/14667 ,  H01L27/14685 ,  H01L27/14687 ,  H01L33/08 ,  H01L2924/0002 ,  H01L2924/00

摘要： Provided is a pixel of a multi-stacked complementary metal-oxide semiconductor (CMOS) image sensor and a method of manufacturing the image sensor including a light-receiving unit that may include first through third photodiode layers that are sequentially stacked, an integrated circuit (IC) that is formed below the light-receiving unit, electrode layers that are formed on and below each of the first through third photodiode layers, and a contact plug that connects the electrode layer formed below each of the first through third photodiode layers with a transistor of the IC.

摘要翻译： 提供了多层互补金属氧化物半导体（CMOS）图像传感器的像素，以及包括可以包括依次层叠的第一至第三光电二极管层的光接收单元的图像传感器的制造方法，集成电路 IC），其形成在所述第一至第三光电二极管层之下和之下形成的电极层，以及将形成在所述第一至第三光电二极管层之下的电极层与所述第一至第三光电二极管层之间形成的电极层的接触插塞 晶体管的IC。

公开(公告)号：US20120175597A1

公开(公告)日：2012-07-12

申请号：US13234702

申请日：2011-09-16

申请人： Kyu-sik Kim

发明人： Kyu-sik Kim

IPC分类号： H01L51/42 ,  B82Y99/00 ,  B82Y40/00

CPC分类号： H01L27/307 ,  B82Y10/00 ,  H01L51/0037 ,  H01L51/0046 ,  H01L51/0053 ,  H01L51/0078 ,  H01L51/0081 ,  H01L51/424 ,  H01L51/4253 ,  H01L51/4293

摘要： An image sensor and a method of manufacturing the same. The image sensor includes a plurality of photoelectric conversion units that are horizontally arranged and selectively emit electric signals by absorbing color beams.

摘要翻译： 一种图像传感器及其制造方法。 图像传感器包括水平布置的多个光电转换单元，并且通过吸收色光束选择性地发射电信号。

公开(公告)号：US20090075197A1

公开(公告)日：2009-03-19

申请号：US12040009

申请日：2008-02-29

申请人： Jin-baek KIM ,  Byung-ha Park ,  Kyu-sik Kim ,  Young-ung Ha ,  Su-min Kim

发明人： Jin-baek KIM ,  Byung-ha Park ,  Kyu-sik Kim ,  Young-ung Ha ,  Su-min Kim

IPC分类号： G03F7/004 ,  G03F7/20 ,  B41J2/05

CPC分类号： G03F7/038 ,  B41J2/1603 ,  B41J2/1631 ,  B41J2/1645 ,  G03F7/0385 ,  Y10S430/115 ,  Y10S430/122 ,  Y10S430/126

摘要： A photoresist composition including an oxetane-containing compound represented by Formula 1 or 2, an oxirane-containing compound represented by Formula 3 or 4, a photoinitiator, and a solvent, a method of forming a pattern using the photoresist composition, and an inkjet print head including a polymerization product of the photoresist composition. The photoresist composition provides a polymerization product which resists formation of cracks due to an inner stress, and has excellent heat tolerance, excellent chemical resistance, excellent adhesiveness, and excellent durability.

摘要翻译： 包含由式1或2表示的含氧杂环丁烷的化合物，由式3或4表示的含环氧乙烷的化合物，光引发剂和溶剂的光致抗蚀剂组合物，使用光致抗蚀剂组合物形成图案的方法和喷墨印刷 头包括光致抗蚀剂组合物的聚合产物。 光致抗蚀剂组合物提供抗内壁应力形成裂纹的聚合物，耐热性优异，耐化学性优异，粘合性优异，耐久性优异。