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32 条记录 (耗时 0.03 秒)

    MASK BLANK, METHOD OF MANUFACTURING THE SAME, AND TRANSFER MASK
    2.
    发明申请
    MASK BLANK, METHOD OF MANUFACTURING THE SAME, AND TRANSFER MASK 有权
    掩模布，其制造方法和转印掩模

    公开(公告)号：US20130177841A1

    公开(公告)日：2013-07-11

    申请号：US13823206

    申请日：2011-09-29

    申请人： Kazuya Sakai ,  Masahiro Hashimoto ,  Takeyuki Yamada

    发明人： Kazuya Sakai ,  Masahiro Hashimoto ,  Takeyuki Yamada

    IPC分类号： G03F1/50

    CPC分类号： G03F1/50 ,  G03F1/38

    摘要： Provided is a mask blank that is improved in adhesion of a thin film for forming a transfer pattern to a resist, thus capable of suppressing the occurrence of collapse, chipping, or the like of a formed resist pattern. The mask blank has, on a transparent substrate 1, a thin film 2 which is for forming a transfer pattern and is made of a material containing a metal. The thin film 2 has a surface modified layer in the form of an oxide film containing a hydrocarbon. The surface modified layer of the thin film 2 can be formed by, for example, causing a highly concentrated ozone gas and an unsaturated hydrocarbon gas to act on the thin film.

    摘要翻译： 提供了一种掩模坯料，其提高了用于将形成转印图案的薄膜粘合到抗蚀剂上，从而能够抑制所形成的抗蚀剂图案的崩溃，碎裂等的发生。 掩模坯料在透明基板1上具有用于形成转印图案并由含有金属的材料制成的薄膜2。 薄膜2具有含有烃的氧化膜形式的表面改性层。 薄膜2的表面改性层可以通过例如使高度浓缩的臭氧气体和不饱和烃气体作用于薄膜而形成。

    Photomask blank manufacturing method and photomask manufacturing method
    3.
    发明授权
    Photomask blank manufacturing method and photomask manufacturing method 有权
    光掩模坯料制造方法和光掩模制造方法

    公开(公告)号：US08221941B2

    公开(公告)日：2012-07-17

    申请号：US12647808

    申请日：2009-12-28

    申请人： Toshiyuki Suzuki ,  Masahiro Hashimoto ,  Kazunori Ono ,  Ryo Ohkubo ,  Kazuya Sakai

    发明人： Toshiyuki Suzuki ,  Masahiro Hashimoto ,  Kazunori Ono ,  Ryo Ohkubo ,  Kazuya Sakai

    IPC分类号： G03F1/22

    CPC分类号： G03F1/32

    摘要： A thin film made of a material containing a metal and silicon is formed on a light-transmissive substrate. Then, a treatment is performed to modify a main surface of the thin film in advance so that when exposure light having a wavelength of 200 nm or less is accumulatively irradiated on a thin film pattern of a photomask to be produced by patterning the thin film, the transfer characteristic of the thin film pattern does not change more than a predetermined degree. This treatment is performed by carrying out, for example, a heat treatment in an atmosphere containing oxygen at 450° C. to 900° C.

    摘要翻译： 在透光性基板上形成由含有金属和硅的材料构成的薄膜。 然后，进行处理以预先修改薄膜的主表面，使得当将具有200nm或更小的波长的曝光光累积地照射到通过对薄膜进行图案化而制造的光掩模的薄膜图案上时， 薄膜图案的转印特性不会超过预定的程度。 该处理通过例如在450℃〜900℃的含氧气氛中进行热处理来进行。

    Mask blank, method of manufacturing the same, transfer mask, and method of manufacturing the same
    4.
    发明授权
    Mask blank, method of manufacturing the same, transfer mask, and method of manufacturing the same 有权
    掩模毛坯，其制造方法，转印掩模及其制造方法

    公开(公告)号：US09091934B2

    公开(公告)日：2015-07-28

    申请号：US13995751

    申请日：2011-12-22

    申请人： Kazuya Sakai ,  Masahiro Hashimoto

    发明人： Kazuya Sakai ,  Masahiro Hashimoto

    IPC分类号： G03F1/50 ,  H01L21/3065 ,  G03F1/46 ,  H01L21/308 ,  H01L21/3213 ,  G03F1/82

    CPC分类号： G03F1/50 ,  G03F1/46 ,  G03F1/82 ,  H01L21/3065 ,  H01L21/3081 ,  H01L21/3213 ,  H01L21/32136

    摘要： Provided is a method of manufacturing a mask blank that is improved in cleaning resistance to ozone cleaning or the like, thus capable of preventing degradation of the mask performance due to the cleaning. The method is for manufacturing a mask blank having, on a substrate, a thin film which is formed at its surface with an antireflection layer made of a material containing a transition metal, and carries out a treatment of causing a highly concentrated ozone gas with a concentration of 50 to 100 vol % to act on the antireflection layer to thereby form a surface modified layer comprising a strong oxide film containing an oxide of the transition metal at a surface of the antireflection layer.

    摘要翻译： 提供了一种制造掩模坯料的方法，该掩模坯料具有改进的耐臭氧清洁等的清洁性能，因此能够防止由于清洁而引起的掩模性能的劣化。 该方法用于制造掩模坯料，其在基板上具有在其表面形成有由含有过渡金属的材料制成的抗反射层的薄膜，并进行使高浓度的臭氧气体与 浓度为50〜100体积％，从而形成表面改性层，该表面改性层包含在抗反射层的表面含有过渡金属的氧化物的强氧化物膜。

    METHOD OF MANUFACTURING TRANSFER MASK AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
    8.
    发明申请
    METHOD OF MANUFACTURING TRANSFER MASK AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
    制造转移掩模的方法和制造半导体器件的方法

    公开(公告)号：US20110217635A1

    公开(公告)日：2011-09-08

    申请号：US13122680

    申请日：2010-10-08

    申请人： Masahiro Hashimoto ,  Kazuya Sakai ,  Toshiyuki Suzuki ,  Kazunori Ono

    发明人： Masahiro Hashimoto ,  Kazuya Sakai ,  Toshiyuki Suzuki ,  Kazunori Ono

    IPC分类号： G03F1/00

    CPC分类号： G03F1/46 ,  G03F1/54 ,  G03F1/80 ,  G03F1/82

    摘要： The present invention is a method of manufacturing a transfer mask with use of a mask blank in which a thin film for pattern formation and a chromium-based thin film made of a material containing chromium are stacked on a transparent substrate in this order. The thin film for pattern formation is made of material containing silicon and a transition metal other than chromium. The chromium-based thin film is made of a material containing chromium. Exposure light having a wavelength of 200 nm or less is applied to the transfer mask. In the manufacturing method, the transfer mask is produced by performing, in the following order, a process of forming a resist film having a transfer pattern on the chromium-based thin film, a process of forming a transfer pattern in the chromium-based thin film with use of a mask of the resist film having the transfer pattern, a process of forming a transfer pattern in the thin film for pattern formation with use of a mask of the chromium-based thin film having the transfer pattern, and a process of removing the chromium-based thin film by etching. The manufacturing method further includes a cleaning process of at least one of alkali solution cleaning, hot water cleaning, and ozone-containing water cleaning on the produced transfer mask until a width of the transfer pattern of the thin film for pattern formation is reduced by 4 nm or a space width of the thin film for pattern formation is increased by 4 nm.

    摘要翻译： 本发明是一种使用掩模坯料制造转印掩模的方法，其中用于图案形成的薄膜和由含铬材料制成的铬基薄膜依次层叠在透明基板上。 用于图案形成的薄膜由含有硅和除铬以外的过渡金属的材料制成。 铬基薄膜由含铬的材料制成。 将具有200nm以下波长的曝光光施加到转印掩模。 在制造方法中，通过以下顺序，通过在铬系薄膜上形成具有转印图案的抗蚀剂膜的工序来制造转印掩模，在铬系薄膜中形成转印图案的工序 使用具有转印图案的抗蚀剂膜的掩模的膜，使用具有转印图案的铬基薄膜的掩模在图案形成用薄膜中形成转印图案的工序，以及 通过蚀刻去除铬基薄膜。 该制造方法还包括在制造的转印掩模上进行碱溶液清洗，热水清洗和含臭氧水清洗中的至少一种的清洗处理，直到图案形成用薄膜的转印图案的宽度减少4 nm或用于图案形成的薄膜的空间宽度增加4nm。

    Pressure sensor and manufacturing method therefor
    9.
    发明授权
    Pressure sensor and manufacturing method therefor 有权
    压力传感器及其制造方法

    公开(公告)号：US07343810B2

    公开(公告)日：2008-03-18

    申请号：US11342535

    申请日：2006-01-31

    申请人： Kazushi Suzuki ,  Kazuya Sakai ,  Isamu Kandori

    发明人： Kazushi Suzuki ,  Kazuya Sakai ,  Isamu Kandori

    IPC分类号： G01L7/00

    CPC分类号： G01L19/0645 ,  G01L19/146

    摘要： A pressure sensor is composed of a pressure housing having a pressure chamber inside and a pressure sensitive element arranged in the pressure chamber, and a joint housing having a fluid passage for leading fluid into the pressure housing, wherein the pressure housing and the joint housing are jointed by brazing with an insulating member interposed at a joint section therebetween. A stress relieving member is interposed at least either between the metal housing and the insulating member or between the joint housing and the insulating member, so that the insulating member can be relieved of a stress which is caused by the braze jointing to act on the insulating member.

    摘要翻译： 压力传感器由在内部具有压力室的压力壳体和布置在压力室中的压力敏感元件组成，以及具有用于将流体引入压力壳体的流体通道的接头壳体，其中压力壳体和接头壳体 通过钎焊与插入其间的接合部分处的绝缘构件接合。 应力消除部件至少插入在金属壳体和绝缘构件之间或者在接头壳体和绝缘构件之间，使得绝缘构件能够消除由钎焊接合作用于绝缘体上的应力 会员。