公开(公告)号：US20170053869A1

公开(公告)日：2017-02-23

申请号：US14985969

申请日：2015-12-31

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Atsuko SAKATA ,  Takeshi ISHIZAKI ,  Shinya OKUDA ,  Kei WATANABE ,  Masayuki KITAMURA ,  Satoshi WAKATSUKI ,  Daisuke IKENO ,  Junichi WADA ,  Hirotaka OGIHARA

IPC: H01L23/522 ,  H01L23/532 ,  H01L21/3065 ,  H01L27/115 ,  H01L21/768

CPC classification number: H01L21/76879 ,  H01L21/3065 ,  H01L21/76843 ,  H01L21/76864 ,  H01L27/11582 ,  H01L29/7881

Abstract: According to one embodiment, the stacked body includes a plurality of metal films, a plurality of silicon oxide films, and a plurality of intermediate films. The intermediate films are provided between the metal films and the silicon oxide films. The intermediate films contain silicon nitride. Nitrogen composition ratios of the intermediate films are higher on sides of interfaces between the intermediate films and the metal films than on sides of interfaces between the intermediate films and the silicon oxide films. Silicon composition ratios of the intermediate films are higher on sides of interfaces between the intermediate films and the silicon oxide films than on sides of interfaces between the intermediate films and the metal films.

Abstract translation: 根据一个实施例，层叠体包括多个金属膜，多个氧化硅膜和多个中间膜。 中间膜设置在金属膜和氧化硅膜之间。 中间膜含有氮化硅。 在中间膜和金属膜之间的界面侧，中间膜的氮组成比在中间膜和氧化硅膜之间的界面侧更高。 在中间膜和氧化硅膜之间的界面侧，中间膜的硅组成比在中间膜和金属膜之间的界面侧更高。

公开(公告)号：US20160276170A1

公开(公告)日：2016-09-22

申请号：US15064990

申请日：2016-03-09

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Shinya OKUDA ,  Kei WATANABE ,  Hidekazu HAYASHI

IPC: H01L21/322 ,  H01L21/311 ,  H01L21/02

CPC classification number: H01L21/02274 ,  H01L21/0206 ,  H01L21/02115 ,  H01L21/31111 ,  H01L21/32055

Abstract: A semiconductor manufacturing method in accordance with an embodiment includes feeding a first gas, which contains a component of a first film, to a reaction chamber, and forming a first film over a semiconductor substrate, which is accommodated in the reaction chamber, through plasma CVD. The semiconductor manufacturing method includes feeding a second gas to the reaction chamber after forming the first film, allowing the first gas in the reaction chamber to react on the second gas, and forming a second film, which has a composition different from that of the first film, over the surface of the first film. The semiconductor manufacturing method includes selectively removing the second film.

Abstract translation: 根据实施例的半导体制造方法包括将包含第一膜的成分的第一气体馈送到反应室，并且通过等离子体CVD将容纳在反应室中的半导体衬底上形成第一膜 。 半导体制造方法包括在形成第一膜之后将第二气体供给到反应室，使得反应室中的第一气体在第二气体上反应，并形成第二膜，其具有与第一膜不同的组成 电影，在第一部电影的表面。 半导体制造方法包括选择性地去除第二膜。

公开(公告)号：US20160300845A1

公开(公告)日：2016-10-13

申请号：US14828830

申请日：2015-08-18

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Takeshi ISHIZAKI ,  Junichi WADA ,  Atsuko SAKATA ,  Kei WATANABE ,  Masayuki KITAMURA ,  Daisuke IKENO ,  Satoshi WAKATSUKl ,  Hirotaka OGIHARA ,  Shinya OKUDA

IPC: H01L27/115 ,  H01L27/02 ,  H01L21/28 ,  H01L29/423

CPC classification number: H01L27/11582 ,  H01L27/1157

Abstract: According to one embodiment, a semiconductor device includes a substrate, a stacked body, a film having semi-conductivity or conductivity, and a memory film. The stacked body includes a plurality of metal layers, a plurality of insulating layers, and a plurality of intermediate layers stacked on a major surface of the substrate. The film extends in the stacked body in a stacking direction of the stacked body. The memory film is provided between the film and the metal layers. The metal layers are tungsten layers and the intermediate layers are tungsten nitride layers. Or the metal layers are molybdenum layers and the intermediate layers are molybdenum nitride layers.

Abstract translation: 根据一个实施例，半导体器件包括衬底，层叠体，具有半导电性或导电性的膜和存储膜。 堆叠体包括多个金属层，多个绝缘层和堆叠在基板的主表面上的多个中间层。 薄膜沿层叠体的层叠方向在层叠体上延伸。 记忆膜设置在膜和金属层之间。 金属层是钨层，中间层是氮化钨层。 或者金属层是钼层，中间层是氮化钼层。