公开(公告)号：US20160276219A1

公开(公告)日：2016-09-22

申请号：US14841333

申请日：2015-08-31

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Makoto WADA ,  Yuichi YAMAZAKI ,  Hisao MIYAZAKI ,  Akihiro KAJITA ,  Tatsuro SAITO ,  Atsunobu ISOBAYASHI ,  Taishi ISHIKURA ,  Masayuki KATAGIRI ,  Tadashi SAKAI

IPC分类号： H01L21/768 ,  H01L23/532 ,  H01L23/528

CPC分类号： H01L23/53276 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76885

摘要： According to one embodiment, a method of manufacturing a semiconductor device, the method includes forming a graphene film on a catalytic layer, removing a part of the graphene film to form an exposed side surface of the graphene film, introducing dopant into the graphene film from the exposed side surface, and forming a graphene interconnect by patterning the graphene film into which the dopant is introduced.

摘要翻译： 根据一个实施方案，一种制造半导体器件的方法，该方法包括在催化剂层上形成石墨烯膜，除去一部分石墨烯膜以形成石墨烯膜的暴露侧表面，将掺杂剂引入到石墨烯膜中 暴露的侧表面，并且通过图案化引入掺杂剂的石墨烯膜来形成石墨烯互连。

公开(公告)号：US20180277487A1

公开(公告)日：2018-09-27

申请号：US15691257

申请日：2017-08-30

申请人： Kabushiki Kaisha Toshiba

发明人： Hisao MIYAZAKI ,  Tadashi SAKAI ,  Yasutaka NISHIDA ,  Takashi YOSHIDA ,  Yuichi YAMAZAKI ,  Masayuki KATAGIRI ,  Naoshi SAKUMA

IPC分类号： H01L23/532 ,  H01L23/522 ,  H01L21/3205 ,  H01L21/3213 ,  H01L21/768

CPC分类号： H01L23/53276 ,  H01L21/32055 ,  H01L21/32135 ,  H01L21/32139 ,  H01L21/76877 ,  H01L21/76892 ,  H01L23/5226 ,  H01L23/53271 ,  H01L23/5329 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/1157 ,  H01L27/11582

摘要： A graphene wiring structure of an embodiment has: an amorphous or polycrystalline insulating film; and a multilayer graphene on the insulating film. The multilayer graphene including a plurality of graphene crystals having a zigzag direction is oriented at 17 degrees or less with respect to an electric conduction direction on the insulating film.

公开(公告)号：US20170079138A1

公开(公告)日：2017-03-16

申请号：US15254353

申请日：2016-09-01

申请人： Kabushiki Kaisha Toshiba

发明人： Tadashi SAKAI ,  Yuichi YAMAZAKI ,  Hisao MIYAZAKI ,  Masayuki KATAGIRI ,  Taishi ISHIKURA ,  Akihiro KAJITA

IPC分类号： H05K1/09 ,  H05K3/40 ,  H05K3/14 ,  H05K1/11 ,  H05K1/03

CPC分类号： H05K1/09 ,  G11C11/00 ,  H01L21/768 ,  H01L21/7682 ,  H01L21/76831 ,  H01L21/76879 ,  H01L21/76885 ,  H01L23/5283 ,  H01L23/53276 ,  H05K1/0306 ,  H05K1/115 ,  H05K3/146 ,  H05K3/4076 ,  H05K2201/0323

摘要： A graphene wiring structure of an embodiment has a substrate, a metal part on the substrate, multilayered graphene connected to the metal part, a first insulative film on the substrate, and a second insulative film on the substrate. The metal part is present between the first insulative film and the second insulative film. Edges of the multilayered graphene are connected to the metal part. A side face of the first insulative film vertical to the substrate opposes a side face of the second insulative film vertical to the substrate. A first outer face of the multilayered graphene is in physical contact with a first side face of the first insulative film vertical to the substrate. A second outer face of the multilayered graphene is in physical contact with a second side face of the second insulative film vertical to the substrate.

摘要翻译： 实施例的石墨烯布线结构具有基板，基板上的金属部件，与金属部件连接的多层石墨烯，基板上的第一绝缘膜，以及基板上的第二绝缘膜。 金属部分存在于第一绝缘膜和第二绝缘膜之间。 多层石墨烯的边缘连接到金属部分。 垂直于基板的第一绝缘膜的侧面与第二绝缘膜垂直于基板的侧面相对。 多层石墨烯的第一外表面与垂直于基板的第一绝缘膜的第一侧面物理接触。 多层石墨烯的第二外表面与第二绝缘膜垂直于衬底的第二侧面物理接触。

公开(公告)号：US20170077178A1

公开(公告)日：2017-03-16

申请号：US15251448

申请日：2016-08-30

申请人： Kabushiki Kaisha Toshiba

发明人： Hisao MIYAZAKI ,  Tadashi SAKAI ,  Yuichi YAMAZAKI ,  Masayuki KATAGIRI

IPC分类号： H01L27/24 ,  H01L45/00 ,  H01L49/02 ,  H01L23/528 ,  H01L23/532

CPC分类号： H01L27/2418 ,  H01L23/5283 ,  H01L23/53276 ,  H01L27/2481 ,  H01L28/40 ,  H01L28/60 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/1633

摘要： A nonvolatile storage device of an embodiment includes a first wiring layer extending in a first direction, a second wiring layer extending in a second direction intersecting with the first direction, a conductive layer between the first wiring layer and the second wiring layer at an intersection of the first wiring layer and the second wiring layer, and a resistance change region including at least one of an oxide, a nitride, and an oxynitride in the first wiring layer. The resistance change region exists in the first wiring layer including an interface between the first wiring layer and the conductive layer.

摘要翻译： 实施方式的非易失性存储装置具有沿第一方向延伸的第一布线层，沿与第一方向交叉的第二方向延伸的第二布线层，在第一布线层和第二布线层之间的交点处的导电层 第一布线层和第二布线层，以及包括第一布线层中的氧化物，氮化物和氧氮化物中的至少一个的电阻变化区域。 电阻变化区域存在于包括第一布线层和导电层之间的界面的第一布线层中。

公开(公告)号：US20180012846A1

公开(公告)日：2018-01-11

申请号：US15446244

申请日：2017-03-01

申请人： Kabushiki Kaisha Toshiba

发明人： Hisao MIYAZAKI ,  Takashi YOSHIDA ,  Masayuki KATAGIRI ,  Yuichi YAMAZAKI ,  Tadashi SAKAI

IPC分类号： H01L23/532

CPC分类号： H01L23/53276 ,  H01L23/53295

摘要： A graphene structure of an embodiment includes multilayer graphene laminated with graphene sheets, and a first interlayer material being present between the graphene sheets of the multilayer graphene and containing a multimer of molybdenum oxide.

公开(公告)号：US20160086891A1

公开(公告)日：2016-03-24

申请号：US14842249

申请日：2015-09-01

申请人： Kabushiki Kaisha Toshiba

发明人： Hisao MIYAZAKI ,  Tadashi SAKAI ,  Yuichi YAMAZAKI ,  Masayuki KATAGIRI

IPC分类号： H01L23/532 ,  H01L21/3205 ,  H01L23/528

CPC分类号： H01L23/53276 ,  H01L21/76834 ,  H01L21/76838 ,  H01L2924/0002 ,  H01L2924/00

摘要： Graphene wiring of an embodiment has a graphene intercalation compound including a multilayer graphene having graphene sheets stacked therein and an interlayer substance disposed between layers of the multilayer graphene, and an interlayer cross-linked layer connected to a side surface of the multilayer graphene. The interlayer cross-linked layer has a cross-linked molecular structure including multiple bonded molecules cross-linking the graphene sheets included in the multilayer graphene.

摘要翻译： 实施例的石墨烯布线具有石墨烯插层化合物，其包括层叠有石墨烯片的多层石墨烯和设置在多层石墨烯的层之间的层间物质，以及连接到多层石墨烯的侧表面的层间交联层。 层间交联层具有包含交联多层石墨烯中所含的石墨烯片的多个键合分子的交联分子结构。

公开(公告)号：US20140117548A1

公开(公告)日：2014-05-01

申请号：US13950442

申请日：2013-07-25

申请人： Kabushiki Kaisha Toshiba

发明人： Masayuki KATAGIRI ,  Yuichi YAMAZAKI ,  Tadashi SAKAI ,  Naoshi SAKUMA ,  Mariko SUZUKI

IPC分类号： H01L23/532 ,  H01L23/522 ,  H01L21/768

CPC分类号： H01L21/76877 ,  C01B31/0206 ,  C01B32/15 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/76838 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76876 ,  H01L21/76879 ,  H01L23/5226 ,  H01L23/53276 ,  H01L29/0669 ,  H01L29/413 ,  H01L51/0048 ,  H01L51/444 ,  H01L2221/1094 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device of an embodiment includes: a substrate on which a semiconductor circuit is formed; an interlayer insulating film in which a contact hole is formed on the substrate; a catalyst metal film on a side wall of the contact hole; catalyst metal particles on a bottom of the contact hole; graphene on the catalyst metal film; and carbon nanotubes, which penetrates the contact hole, on the catalyst metal particles.

摘要翻译： 实施例的半导体器件包括：形成半导体电路的基板; 在基板上形成有接触孔的层间绝缘膜; 在接触孔的侧壁上的催化剂金属膜; 催化剂金属颗粒在接触孔的底部; 催化剂金属膜上的石墨烯; 和穿过接触孔的碳纳米管在催化剂金属颗粒上。

公开(公告)号：US20180269157A1

公开(公告)日：2018-09-20

申请号：US15693643

申请日：2017-09-01

申请人： Kabushiki Kaisha Toshiba

发明人： Masayuki KATAGIRI ,  Tatsuro SAITO ,  Tadashi SAKAI ,  Hisao MIYAZAKI

IPC分类号： H01L23/532 ,  H01L27/11524 ,  H01L27/1157

CPC分类号： H01L23/53276 ,  H01L27/11524 ,  H01L27/1157 ,  H01L27/11573

摘要： A wiring of an embodiment includes: a multilayer graphene including graphene sheets laminated in a first direction, the multilayer graphene extended in a second direction regarded as a longitudinal direction that intersects with the first direction; a first metal part in direct contact with the multilayer graphene; a second metal part spaced apart from the first metal part in the second direction, the second metal part in direct contact with the multilayer graphene; a first conductive part disposed on the multilayer graphene in the first direction, and electrically connected to the multilayer graphene with the first metal part interposed therebetween; and a second conductive part disposed on the multilayer graphene in the first direction, and electrically connected to the multilayer graphene with the second metal part interposed therebetween.

公开(公告)号：US20170316973A1

公开(公告)日：2017-11-02

申请号：US15651476

申请日：2017-07-17

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Masayuki KITAMURA ,  Atsuko SAKATA ,  Makoto WADA ,  Yuichi YAMAZAKI ,  Masayuki KATAGIRI ,  Akihiro KAJITA ,  Tadashi SAKAI ,  Naoshi SAKUMA ,  Ichiro MIZUSHIMA

IPC分类号： H01L21/768 ,  H01L23/532

CPC分类号： H01L21/76846 ,  H01L21/02373 ,  H01L21/76855 ,  H01L21/76858 ,  H01L21/76861 ,  H01L21/76876 ,  H01L23/53276 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

摘要： According to one embodiment, a method for manufacturing a semiconductor device is disclosed. The method includes forming a co-catalyst layer and catalyst layer above a surface of a semiconductor substrate. The co-catalyst layer and catalyst layer have fcc structure. The fcc structure is formed such that (111) face of the fcc structure is to be oriented parallel to the surface of the semiconductor substrate. The catalyst includes a portion which contacts the co-catalyst layer. The portion has the fcc structure. An exposed surface of the catalyst layer is planarized by oxidation and reduction treatments. A graphene layer is formed on the catalyst layer.

公开(公告)号：US20160284646A1

公开(公告)日：2016-09-29

申请号：US15055894

申请日：2016-02-29

申请人： Kabushiki Kaisha Toshiba

发明人： Tadashi SAKAI ,  Hisao MIYAZAKI ,  Masayuki KATAGIRI ,  Yuichi YAMAZAKI

IPC分类号： H01L23/532 ,  H01L21/768 ,  H01L21/02 ,  H01L23/528

CPC分类号： H01L23/53276 ,  H01L21/02227 ,  H01L21/02236 ,  H01L21/02247 ,  H01L21/02252 ,  H01L21/76838 ,  H01L23/5329

摘要： A graphene wring structure of an embodiment includes multilayer graphene, a first interlayer compound existing in an interlayer space of the multilayer graphene, and a second interlayer compound existing in the interlayer space of the multilayer graphene. The second interlayer compound containing at least one of an oxide, a nitride and a carbide.

摘要翻译： 实施例的石墨烯缠绕结构包括多层石墨烯，存在于多层石墨烯的层间空间中的第一层间化合物和存在于多层石墨烯的层间空间中的第二层间化合物。 含有氧化物，氮化物和碳化物中的至少一种的第二层间化合物。