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公开(公告)号:US11960719B2
公开(公告)日:2024-04-16
申请号:US17974740
申请日:2022-10-27
Applicant: Kioxia Corporation
Inventor: Hirokuni Yano , Shinichi Kanno , Toshikatsu Hida , Hidenori Matsuzaki , Kazuya Kitsunai , Shigehiro Asano
IPC: G06F3/06 , G06F12/02 , G11C11/56 , G06F12/0804 , G06F12/0866
CPC classification number: G06F3/0604 , G06F3/0616 , G06F3/0631 , G06F3/064 , G06F3/0656 , G06F3/0658 , G06F3/0679 , G06F3/0685 , G06F12/0246 , G11C11/5628 , G06F12/0804 , G06F12/0866 , G06F2212/7201 , G06F2212/7202 , G06F2212/7203 , G06F2212/7209
Abstract: A semiconductor storage device includes a first memory area configured in a volatile semiconductor memory, second and third memory areas configured in a nonvolatile semiconductor memory, and a controller which executes following processing. The controller executes a first processing for storing a plurality of data by the first unit in the first memory area, a second processing for storing data outputted from the first memory area by a first management unit in the second memory area, and a third processing for storing data outputted from the first memory area by a second management unit in the third memory area.
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公开(公告)号:US11513682B2
公开(公告)日:2022-11-29
申请号:US17083529
申请日:2020-10-29
Applicant: Kioxia Corporation
Inventor: Hirokuni Yano , Shinichi Kanno , Toshikatsu Hida , Hidenori Matsuzaki , Kazuya Kitsunai , Shigehiro Asano
IPC: G06F3/06 , G11C11/56 , G06F12/02 , G06F12/0804 , G06F12/0866
Abstract: A semiconductor storage device includes a first memory area configured in a volatile semiconductor memory, second and third memory areas configured in a nonvolatile semiconductor memory, and a controller which executes following processing. The controller executes a first processing for storing a plurality of data by the first unit in the first memory area, a second processing for storing data outputted from the first memory area by a first management unit in the second memory area, and a third processing for storing data outputted from the first memory area by a second management unit in the third memory area.
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公开(公告)号:US12229404B2
公开(公告)日:2025-02-18
申请号:US18532267
申请日:2023-12-07
Applicant: Kioxia Corporation
Inventor: Kazuya Kitsunai , Shinichi Kanno , Hirokuni Yano , Toshikatsu Hida , Junji Yano
Abstract: A memory system includes a nonvolatile memory including a plurality of blocks as data erase units, a measuring unit which measures an erase time at which data of each block is erased, and a block controller which writes data supplied from at least an exterior into a first block which is set in a free state and whose erase time is oldest.
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公开(公告)号:US11416372B2
公开(公告)日:2022-08-16
申请号:US16996984
申请日:2020-08-19
Applicant: Kioxia Corporation
Inventor: Ryuji Nishikubo , Hirokuni Yano
Abstract: A storage device includes a hardware random number generator configured to generate a random number; a first memory; and a controller configured to control the hardware random number generator and the first memory. The controller is configured to: obtain the random number generated by the hardware random number generator after the storage device is powered up; obtain a first trace log of the storage device; and store, into the first memory, a log resulting from appending the obtained random number to the first trace log, as a second trace log.
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公开(公告)号:US20220155960A1
公开(公告)日:2022-05-19
申请号:US17591812
申请日:2022-02-03
Applicant: Kioxia Corporation
Inventor: Kazuya Kitsunai , Shinichi Kanno , Hirokuni Yano , Toshikatsu Hida , Junji Yano
Abstract: A memory system includes a nonvolatile memory including a plurality of blocks as data erase units, a measuring unit which measures an erase time at which data of each block is erased, and a block controller which writes data supplied from at least an exterior into a first block which is set in a free state and whose erase time is oldest.
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公开(公告)号:US11893237B2
公开(公告)日:2024-02-06
申请号:US17591812
申请日:2022-02-03
Applicant: Kioxia Corporation
Inventor: Kazuya Kitsunai , Shinichi Kanno , Hirokuni Yano , Toshikatsu Hida , Junji Yano
CPC classification number: G06F3/0604 , G06F3/064 , G06F3/0616 , G06F3/0619 , G06F3/0647 , G06F3/0652 , G06F3/0659 , G06F3/0679 , G06F3/0685 , G06F12/0246 , G06F2212/1036 , G06F2212/7202 , G06F2212/7205 , G06F2212/7211
Abstract: A memory system includes a nonvolatile memory including a plurality of blocks as data erase units, a measuring unit which measures an erase time at which data of each block is erased, and a block controller which writes data supplied from at least an exterior into a first block which is set in a free state and whose erase time is oldest.
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公开(公告)号:US11287975B2
公开(公告)日:2022-03-29
申请号:US16730329
申请日:2019-12-30
Applicant: KIOXIA CORPORATION
Inventor: Kazuya Kitsunai , Shinichi Kanno , Hirokuni Yano , Toshikatsu Hida , Junji Yano
Abstract: A memory system includes a nonvolatile memory including a plurality of blocks as data erase units, a measuring unit which measures an erase time at which data of each block is erased, and a block controller which writes data supplied from at least an exterior into a first block which is set in a free state and whose erase time is oldest.
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