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公开(公告)号:US11960719B2
公开(公告)日:2024-04-16
申请号:US17974740
申请日:2022-10-27
Applicant: Kioxia Corporation
Inventor: Hirokuni Yano , Shinichi Kanno , Toshikatsu Hida , Hidenori Matsuzaki , Kazuya Kitsunai , Shigehiro Asano
IPC: G06F3/06 , G06F12/02 , G11C11/56 , G06F12/0804 , G06F12/0866
CPC classification number: G06F3/0604 , G06F3/0616 , G06F3/0631 , G06F3/064 , G06F3/0656 , G06F3/0658 , G06F3/0679 , G06F3/0685 , G06F12/0246 , G11C11/5628 , G06F12/0804 , G06F12/0866 , G06F2212/7201 , G06F2212/7202 , G06F2212/7203 , G06F2212/7209
Abstract: A semiconductor storage device includes a first memory area configured in a volatile semiconductor memory, second and third memory areas configured in a nonvolatile semiconductor memory, and a controller which executes following processing. The controller executes a first processing for storing a plurality of data by the first unit in the first memory area, a second processing for storing data outputted from the first memory area by a first management unit in the second memory area, and a third processing for storing data outputted from the first memory area by a second management unit in the third memory area.
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公开(公告)号:US12229404B2
公开(公告)日:2025-02-18
申请号:US18532267
申请日:2023-12-07
Applicant: Kioxia Corporation
Inventor: Kazuya Kitsunai , Shinichi Kanno , Hirokuni Yano , Toshikatsu Hida , Junji Yano
Abstract: A memory system includes a nonvolatile memory including a plurality of blocks as data erase units, a measuring unit which measures an erase time at which data of each block is erased, and a block controller which writes data supplied from at least an exterior into a first block which is set in a free state and whose erase time is oldest.
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公开(公告)号:US11886335B2
公开(公告)日:2024-01-30
申请号:US17839301
申请日:2022-06-13
Applicant: Kioxia Corporation
Inventor: Kazuya Kitsunai
IPC: G06F12/02
CPC classification number: G06F12/0246 , G06F2212/7202
Abstract: According to one embodiment, a controller manages a first block set being a set of blocks in which a remaining time is a first time and a second block set being a set of blocks in which a remaining time is a second time. The controller calculates a first rewrite speed based on the first time and a number of blocks included in the first block set. The controller calculates a second rewriting speed based on the second time and a sum of the number of blocks included in the first block set and the number of blocks included in the second block set. The controller determines a maximum rewriting speed among the first rewrite speed and the second rewriting speed. The controller performs the rewrite operation at the determined maximum rewrite speed.
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公开(公告)号:US20220155960A1
公开(公告)日:2022-05-19
申请号:US17591812
申请日:2022-02-03
Applicant: Kioxia Corporation
Inventor: Kazuya Kitsunai , Shinichi Kanno , Hirokuni Yano , Toshikatsu Hida , Junji Yano
Abstract: A memory system includes a nonvolatile memory including a plurality of blocks as data erase units, a measuring unit which measures an erase time at which data of each block is erased, and a block controller which writes data supplied from at least an exterior into a first block which is set in a free state and whose erase time is oldest.
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公开(公告)号:US11513682B2
公开(公告)日:2022-11-29
申请号:US17083529
申请日:2020-10-29
Applicant: Kioxia Corporation
Inventor: Hirokuni Yano , Shinichi Kanno , Toshikatsu Hida , Hidenori Matsuzaki , Kazuya Kitsunai , Shigehiro Asano
IPC: G06F3/06 , G11C11/56 , G06F12/02 , G06F12/0804 , G06F12/0866
Abstract: A semiconductor storage device includes a first memory area configured in a volatile semiconductor memory, second and third memory areas configured in a nonvolatile semiconductor memory, and a controller which executes following processing. The controller executes a first processing for storing a plurality of data by the first unit in the first memory area, a second processing for storing data outputted from the first memory area by a first management unit in the second memory area, and a third processing for storing data outputted from the first memory area by a second management unit in the third memory area.
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公开(公告)号:US11182287B2
公开(公告)日:2021-11-23
申请号:US16787133
申请日:2020-02-11
Applicant: Kioxia Corporation
Inventor: Yoko Masuo , Yosuke Mitsumasu , Kazuya Kitsunai
Abstract: According to one embodiment, a memory system includes a nonvolatile memory and a controller. The nonvolatile memory includes a plurality of blocks. The controller controls an operation of writing data to the nonvolatile memory and an operation of reading data to the nonvolatile memory. The controller includes a first processor and a second processor. The first processor executes a first process of creating one or more free blocks by transferring valid data in N blocks (where N is a natural number greater than or equal to two) to blocks of number less than N. The second processor executes a second process of transferring valid data including data which needs refresh in M blocks (where M is a natural number greater than or equal to one) to blocks of number less than or equal to M.
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公开(公告)号:US11893237B2
公开(公告)日:2024-02-06
申请号:US17591812
申请日:2022-02-03
Applicant: Kioxia Corporation
Inventor: Kazuya Kitsunai , Shinichi Kanno , Hirokuni Yano , Toshikatsu Hida , Junji Yano
CPC classification number: G06F3/0604 , G06F3/064 , G06F3/0616 , G06F3/0619 , G06F3/0647 , G06F3/0652 , G06F3/0659 , G06F3/0679 , G06F3/0685 , G06F12/0246 , G06F2212/1036 , G06F2212/7202 , G06F2212/7205 , G06F2212/7211
Abstract: A memory system includes a nonvolatile memory including a plurality of blocks as data erase units, a measuring unit which measures an erase time at which data of each block is erased, and a block controller which writes data supplied from at least an exterior into a first block which is set in a free state and whose erase time is oldest.
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公开(公告)号:US11645001B2
公开(公告)日:2023-05-09
申请号:US17147519
申请日:2021-01-13
Applicant: Kioxia Corporation
Inventor: Chihoko Shigeta , Kazuya Kitsunai
IPC: G06F3/06
CPC classification number: G06F3/0655 , G06F3/0604 , G06F3/0679
Abstract: According to one embodiment, a memory system includes a first and second nonvolatile memory each including a plurality of memory cells; and a memory controller configured to perform, in parallel, a first set of write processes sequentially performed on the first nonvolatile memory, and a second set of write processes sequentially performed on the second nonvolatile memory. The memory controller is configured to change a setting of at least one unperformed write process among the first set and second set of write processes based on differences in progress between the first set and second set of write processes, the first set and second set of write processes being performed in parallel.
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公开(公告)号:US11287975B2
公开(公告)日:2022-03-29
申请号:US16730329
申请日:2019-12-30
Applicant: KIOXIA CORPORATION
Inventor: Kazuya Kitsunai , Shinichi Kanno , Hirokuni Yano , Toshikatsu Hida , Junji Yano
Abstract: A memory system includes a nonvolatile memory including a plurality of blocks as data erase units, a measuring unit which measures an erase time at which data of each block is erased, and a block controller which writes data supplied from at least an exterior into a first block which is set in a free state and whose erase time is oldest.
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