公开(公告)号：US11776823B2

公开(公告)日：2023-10-03

申请号：US17885362

申请日：2022-08-10

Applicant: KIOXIA CORPORATION

Inventor： Mana Tanabe ,  Kosuke Takai ,  Kenji Masui ,  Kaori Umezawa

IPC: H01L21/67 ,  B08B7/00 ,  H01L21/02

CPC classification number: H01L21/67051 ,  B08B7/0014 ,  H01L21/02057 ,  H01L21/67103

Abstract: A substrate processing method includes a process of cooling a substrate to below a freezing point of a processing liquid using a cooling fluid brought into contact with the substrate opposite. While the substrate is cooled to below the freezing point of the processing liquid, a droplet of processing liquid is dispensed onto a surface of the substrate at a specified location of a foreign substance. The droplet then forms a frozen droplet portion at the specified location. The frozen droplet portion is then thawed.

公开(公告)号：US12068244B2

公开(公告)日：2024-08-20

申请号：US17470529

申请日：2021-09-09

Applicant: Kioxia Corporation

Inventor： Yasuhito Yoshimizu ,  Kaori Umezawa ,  Kosuke Takai

IPC: H01L23/522 ,  H01L21/033 ,  H01L23/00 ,  H01L29/423 ,  H10B41/27 ,  H10B43/27

CPC classification number: H01L23/5226 ,  H01L21/0332 ,  H01L24/08 ,  H01L29/42376 ,  H10B41/27 ,  H10B43/27 ,  H01L2224/08146

Abstract: A semiconductor device includes a substrate, a first stacked film and a second stacked film each including insulating layers and electrode layers alternately provided on the substrate, and columnar portions provided in the insulating layers and electrode layers of the first stacked film, and including charge storage layers and semiconductor layers. The second stacked film further includes an insulator including first and second lower faces, the first lower face is inclined by a first angle to an upper face of one of the electrode layers in the first stacked film, the second lower face is inclined by a second angle to the upper face of the one of the electrode layers in the first stacked film, and the second angle is less than the first angle. The insulating layers and electrode layers in the second stacked film are provided below the first and second lower faces of the insulator.

公开(公告)号：US11443963B2

公开(公告)日：2022-09-13

申请号：US16557705

申请日：2019-08-30

Applicant: KIOXIA CORPORATION

Inventor： Mana Tanabe ,  Kosuke Takai ,  Kenji Masui ,  Kaori Umezawa

IPC: H01L21/67 ,  B08B7/00 ,  H01L21/02

Abstract: A substrate processing method includes a process of cooling a substrate to below a freezing point of a processing liquid using a cooling fluid brought into contact with the substrate opposite. While the substrate is cooled to below the freezing point of the processing liquid, a droplet of processing liquid is dispensed onto a surface of the substrate at a specified location of a foreign substance. The droplet then forms a frozen droplet portion at the specified location. The frozen droplet portion is then thawed.