公开(公告)号：US11796910B2

公开(公告)日：2023-10-24

申请号：US17467016

申请日：2021-09-03

Applicant: Kioxia Corporation

Inventor： Kosuke Takai ,  Shingo Kanamitsu ,  Noriko Sakurai

IPC: G03F7/00 ,  B21D22/02 ,  H01J37/317

CPC classification number: G03F7/0002 ,  B21D22/02 ,  H01J37/3174

Abstract: A template according to the present embodiment is a template used in a lithography process of a semiconductor manufacturing process. A first substrate includes a first face, a second face protruded from a portion of the first face, and a lateral face being a lateral face positioned between the second face and the first face and inclined with respect to the second face at a connection portion to the second face. A first material film is provided at least on the lateral face.

公开(公告)号：US11776823B2

公开(公告)日：2023-10-03

申请号：US17885362

申请日：2022-08-10

Applicant: KIOXIA CORPORATION

Inventor： Mana Tanabe ,  Kosuke Takai ,  Kenji Masui ,  Kaori Umezawa

IPC: H01L21/67 ,  B08B7/00 ,  H01L21/02

CPC classification number: H01L21/67051 ,  B08B7/0014 ,  H01L21/02057 ,  H01L21/67103

Abstract: A substrate processing method includes a process of cooling a substrate to below a freezing point of a processing liquid using a cooling fluid brought into contact with the substrate opposite. While the substrate is cooled to below the freezing point of the processing liquid, a droplet of processing liquid is dispensed onto a surface of the substrate at a specified location of a foreign substance. The droplet then forms a frozen droplet portion at the specified location. The frozen droplet portion is then thawed.

公开(公告)号：US11682566B2

公开(公告)日：2023-06-20

申请号：US17238455

申请日：2021-04-23

Applicant: KIOXIA CORPORATION

Inventor： Kosuke Takai ,  Mana Tanabe ,  Hideaki Sakurai

IPC: H01L21/67 ,  B08B7/00 ,  H01L21/68 ,  H01L21/687

CPC classification number: H01L21/67051 ,  B08B7/0014 ,  B08B7/0092 ,  H01L21/6715 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/68 ,  H01L21/68785

Abstract: According to one embodiment, a processing apparatus for processing substrates having different base shapes includes a stage comprising a first portion having a substrate facing surface and an opening extending therethough connected to a source of a cooling fluid, and a second portion located outwardly of the first portion, a substrate support, having a substrate support surface thereon, extending over the second portion, a process fluid outlet overlying the first portion, and a driving unit coupled to one of the stage and the first portion, wherein the driving unit is configured to move at least one of the substrate support surface and the substrate facing surface such that the relative locations of the substrate support surface and the substrate facing surface of the stage are changeable based on the shape of a substrate to be processed in the apparatus.

公开(公告)号：US11579537B2

公开(公告)日：2023-02-14

申请号：US17184442

申请日：2021-02-24

Applicant: KIOXIA CORPORATION

Inventor： Keiko Morishita ,  Kosuke Takai

IPC: G03F7/20 ,  H01L21/027

Abstract: According to one embodiment, a pattern inspection method includes detecting a region of a photomask having a pattern that differs from a corresponding design, acquiring an exposure focus shift information including an exposure focus shift amount of a portion of a substrate corresponding to the detected region of the photomask. The exposure focus shift amount for the detected region is acquired from the exposure focus shift information, and then a pass/fail determination for the detected region is performed based on an estimated pattern to be formed on the substrate.

公开(公告)号：US11249391B2

公开(公告)日：2022-02-15

申请号：US15909491

申请日：2018-03-01

Applicant: KIOXIA CORPORATION

Inventor： Takashi Kamo ,  Kosuke Takai

IPC: G03F1/54 ,  G03F1/00 ,  G03F1/52 ,  G03F1/22 ,  G03F1/24

Abstract: An exposure mask includes a substrate, and a plurality of first films and a plurality of second films located alternately over each other over selected portions of the substrate. The exposure mask further includes a third film selectively located over the first and second films. At least one first pattern is located over the substrate and does not include any of the first, second or third films. At least one second pattern is located over the substrate and includes the first and second films and does not include the third film. At least one third pattern is located over the substrate and includes the first, second and third films.

公开(公告)号：US11275305B2

公开(公告)日：2022-03-15

申请号：US16804826

申请日：2020-02-28

Applicant: KIOXIA CORPORATION

Inventor： Yukio Oppata ,  Kosuke Takai

IPC: G03F1/76 ,  G03F1/80 ,  G03F1/78 ,  G03F1/58 ,  G03F1/48 ,  G03F1/32

Abstract: A method for manufacturing a photomask includes obtaining a substrate on which a halftone film, a light-shielding film, and a resist film are stacked, irradiating a first region of the resist film at a first dose and a second region of the resist film that surrounds the first region at a second dose greater than the first dose, developing the resist film in the first region to form a mask pattern while leaving the resist film in the second region to form a mask frame pattern, and then patterning the light-shielding film using the mask pattern formed in the resist film.

公开(公告)号：US12068244B2

公开(公告)日：2024-08-20

申请号：US17470529

申请日：2021-09-09

Applicant: Kioxia Corporation

Inventor： Yasuhito Yoshimizu ,  Kaori Umezawa ,  Kosuke Takai

IPC: H01L23/522 ,  H01L21/033 ,  H01L23/00 ,  H01L29/423 ,  H10B41/27 ,  H10B43/27

CPC classification number: H01L23/5226 ,  H01L21/0332 ,  H01L24/08 ,  H01L29/42376 ,  H10B41/27 ,  H10B43/27 ,  H01L2224/08146

Abstract: A semiconductor device includes a substrate, a first stacked film and a second stacked film each including insulating layers and electrode layers alternately provided on the substrate, and columnar portions provided in the insulating layers and electrode layers of the first stacked film, and including charge storage layers and semiconductor layers. The second stacked film further includes an insulator including first and second lower faces, the first lower face is inclined by a first angle to an upper face of one of the electrode layers in the first stacked film, the second lower face is inclined by a second angle to the upper face of the one of the electrode layers in the first stacked film, and the second angle is less than the first angle. The insulating layers and electrode layers in the second stacked film are provided below the first and second lower faces of the insulator.

公开(公告)号：US11443963B2

公开(公告)日：2022-09-13

申请号：US16557705

申请日：2019-08-30

Applicant: KIOXIA CORPORATION

Inventor： Mana Tanabe ,  Kosuke Takai ,  Kenji Masui ,  Kaori Umezawa

IPC: H01L21/67 ,  B08B7/00 ,  H01L21/02

Abstract: A substrate processing method includes a process of cooling a substrate to below a freezing point of a processing liquid using a cooling fluid brought into contact with the substrate opposite. While the substrate is cooled to below the freezing point of the processing liquid, a droplet of processing liquid is dispensed onto a surface of the substrate at a specified location of a foreign substance. The droplet then forms a frozen droplet portion at the specified location. The frozen droplet portion is then thawed.