PATTERN DESIGN METHOD, TEMPLATE MANUFACTURING METHOD, AND PATTERN DESIGN APPARATUS

    公开(公告)号:US20240316915A1

    公开(公告)日:2024-09-26

    申请号:US18598201

    申请日:2024-03-07

    CPC classification number: B41C1/10 G03F7/0002 G06F30/392

    Abstract: A pattern design method according to an embodiment is a method to design a pattern of a template used for an imprint process. The imprint process serves to form a predetermined pattern by pressing a shot surface of the template against a surface of a processed layer. The method includes setting an outer edge coverage range corresponding to an outer edge region located a predetermined distance inside an edge of the shot surface of the template. The outer edge coverage range is set to be different from an inner coverage range corresponding to an inner region inside the outer edge region. The method includes designing a pattern in the outer edge region to have a coverage falling within the outer edge coverage range. The method includes designing a pattern in the inner region to have a coverage falling within the inner coverage range.

    TEMPLATE, WORKPIECE, AND ALIGNMENT METHOD

    公开(公告)号:US20220308440A1

    公开(公告)日:2022-09-29

    申请号:US17472387

    申请日:2021-09-10

    Abstract: A template of one embodiment includes an alignment mark. The alignment mark includes a first main pattern and a first auxiliary pattern. In the first main pattern, a first part and a second part are disposed according to a predetermined repeating pattern. The first auxiliary pattern is configured as a pattern opposite to the repeating pattern in a region outside an end of the first main pattern.

    EVALUATION METHOD, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND EVALUATION SYSTEM

    公开(公告)号:US20250069215A1

    公开(公告)日:2025-02-27

    申请号:US18810757

    申请日:2024-08-21

    Inventor: Satoshi MITSUGI

    Abstract: According to one embodiment, an evaluation method including: applying a first transform processing on a first two-dimensional data and a second two-dimensional data to generate a first spectrum and a second spectrum respectively, the first two-dimensional data indicating a defect distribution of a first substrate on which a pattern is formed by imprinting an original mold onto a photoresist on the first substrate, the second two-dimensional data indicating a predicted defect distribution of a second substrate; filtering the generated first spectrum and the generated second spectrum; applying a second transform processing to the processed first spectrum and the processed second spectrum to restore the first two-dimensional data and the second two-dimensional data, respectively; applying thresholding on the restored first two-dimensional data and the restored second two-dimensional data, respectively; and calculating a matching degree by applying a comparison function to the thresholded first two-dimensional data and the thresholded second two-dimensional data.

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