公开(公告)号：US12029136B2

公开(公告)日：2024-07-02

申请号：US17202151

申请日：2021-03-15

Applicant: Kioxia Corporation

Inventor： Shogo Itai ,  Tadaomi Daibou ,  Yuichi Ito ,  Katsuyoshi Komatsu

IPC: H10N50/80 ,  H01F10/32 ,  H10B61/00 ,  H10N50/10

CPC classification number: H10N50/80 ,  H01F10/3286 ,  H01F10/329 ,  H10B61/10 ,  H01F10/3254 ,  H01F10/3272 ,  H10N50/10

Abstract: According to one embodiment, a magnetic memory device includes a magnetoresistance effect element including first and second magnetic layers each having a fixed magnetization direction, a third magnetic layer provided between the first and second magnetic layers, and having a variable magnetization direction, a first nonmagnetic layer between the first and third magnetic layers, and a second nonmagnetic layer between the second and third magnetic layers, and a switching element connected in series to the magnetoresistance effect element, changing from an electrically nonconductive state to an electrically conductive state when a voltage applied between two terminals is higher than or equal to a threshold voltage.

公开(公告)号：US11985907B2

公开(公告)日：2024-05-14

申请号：US17202151

申请日：2021-03-15

Applicant: Kioxia Corporation

Inventor： Shogo Itai ,  Tadaomi Daibou ,  Yuichi Ito ,  Katsuyoshi Komatsu

IPC: H10N50/80 ,  H01F10/32 ,  H10B61/00 ,  H10N50/10

CPC classification number: H10N50/80 ,  H01F10/3286 ,  H01F10/329 ,  H10B61/10 ,  H01F10/3254 ,  H01F10/3272 ,  H10N50/10

Abstract: According to one embodiment, a magnetic memory device includes a magnetoresistance effect element including first and second magnetic layers each having a fixed magnetization direction, a third magnetic layer provided between the first and second magnetic layers, and having a variable magnetization direction, a first nonmagnetic layer between the first and third magnetic layers, and a second nonmagnetic layer between the second and third magnetic layers, and a switching element connected in series to the magnetoresistance effect element, changing from an electrically nonconductive state to an electrically conductive state when a voltage applied between two terminals is higher than or equal to a threshold voltage.

公开(公告)号：US11316097B2

公开(公告)日：2022-04-26

申请号：US17003846

申请日：2020-08-26

Applicant: KIOXIA CORPORATION

Inventor： Taichi Igarashi ,  Tadaomi Daibou ,  Junichi Ito ,  Tadashi Kai ,  Shogo Itai ,  Toshiyuki Enda

IPC: H01L43/02 ,  H01L27/22 ,  G11C11/16 ,  G11C11/34 ,  G11C11/54 ,  H01L43/10

Abstract: According to one embodiment, a memory device includes a first wiring extending in a first direction, and a second wiring extending in a second direction that intersects the first direction. A memory cell is between the first wiring and the second wiring and includes a resistive memory element and a switching element that are connected in series between the first wiring and the second wiring. An insulating region surrounds side surfaces of the memory cell. The insulating region includes a first insulating part adjacent to a side surface of the resistive memory element and a second insulating part adjacent to a side surface of the switching element. The second insulating part has a higher thermal conductivity than the first insulating part.