公开(公告)号：US20230207012A1

公开(公告)日：2023-06-29

申请号：US18171540

申请日：2023-02-20

Applicant: KIOXIA CORPORATION

Inventor： Takatoshi MINAMOTO ,  Toshiki HISADA ,  Dai NAKAMURA

IPC: G11C16/04 ,  H10B41/10 ,  H10B41/35 ,  H10B43/10 ,  H10B43/35 ,  G11C16/08 ,  G11C16/10 ,  G11C16/24 ,  H01L23/528

CPC classification number: G11C16/0483 ,  H10B41/10 ,  H10B41/35 ,  H10B43/10 ,  H10B43/35 ,  G11C16/08 ,  G11C16/10 ,  G11C16/24 ,  H01L23/528

Abstract: A semiconductor memory device includes a memory cell unit, word lines, a driver circuit, and first transistors. The word lines are connected to the control gates of 0-th to N-th memory cells. The (N+1) number of first transistors transfer the voltage to the word lines respectively. Above one of the first transistors which transfers the voltage to an i-th (i is a natural number in the range of 0 to N) word line, M (M

公开(公告)号：US20240113058A1

公开(公告)日：2024-04-04

申请号：US18538659

申请日：2023-12-13

Applicant: Kioxia Corporation

Inventor： Nobuaki OKADA ,  Toshiki HISADA

IPC: H01L23/00 ,  G11C16/04 ,  G11C16/08 ,  G11C16/24 ,  H01L25/065 ,  H01L25/18 ,  H10B41/27 ,  H10B43/27

CPC classification number: H01L24/08 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/24 ,  H01L25/0657 ,  H01L25/18 ,  H10B41/27 ,  H10B43/27 ,  H01L2224/08145 ,  H01L2924/1431 ,  H01L2924/14511

Abstract: A semiconductor storage device includes first and second chips. The first chip includes a first semiconductor substrate, first conductive layers arranged in a first direction and extending in a second direction, a semiconductor column extending in the first direction and facing the first conductive layers, a first charge storage film formed between the first conductive layers and the semiconductor column, a plurality of first transistors on the first semiconductor substrate, and first bonding electrodes electrically connected to a portion of the plurality of first transistors. The second chip includes a second semiconductor substrate, a plurality of second transistors on the second semiconductor substrate, and second bonding electrodes electrically connected to a portion of the plurality of second transistors, and bonded to the first bonding electrodes. A thickness of the second semiconductor substrate in the first direction is smaller than a thickness of the first semiconductor substrate in the first direction.

公开(公告)号：US20220077088A1

公开(公告)日：2022-03-10

申请号：US17183809

申请日：2021-02-24

Applicant: KIOXIA CORPORATION

Inventor： Nobuaki OKADA ,  Toshiki HISADA

IPC: H01L23/00 ,  H01L25/065 ,  H01L25/18 ,  H01L27/11556 ,  H01L27/11582 ,  G11C16/04 ,  G11C16/08

Abstract: A semiconductor storage device includes first and second chips. The first chip includes a first semiconductor substrate, first conductive layers arranged in a first direction and extending in a second direction, a semiconductor column extending in the first direction and facing the first conductive layers, a first charge storage film formed between the first conductive layers and the semiconductor column, a plurality of first transistors on the first semiconductor substrate, and first bonding electrodes electrically connected to a portion of the plurality of first transistors. The second chip includes a second semiconductor substrate, a plurality of second transistors on the second semiconductor substrate, and second bonding electrodes electrically connected to a portion of the plurality of second transistors, and bonded to the first bonding electrodes. A thickness of the second semiconductor substrate in the first direction is smaller than a thickness of the first semiconductor substrate in the first direction.