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1.发明申请公开(公告)号：US20130242295A1
公开(公告)日：2013-09-19
申请号：US13782785
申请日：2013-03-01
Applicant: KLA-TENCOR CORPORATION
Inventor： Daimian Wang , Tao-Yi Fu , Damon F. Kvamme
IPC: G01N21/88
CPC classification number: G01N21/8806 , G01N21/956 , G01N2021/95676
Abstract: The disclosure is directed to a system and method of providing illumination for reticle inspection. According to various embodiments of the disclosure, a multiplexing mirror system receives pulses of illumination from a plurality of illumination sources and directs the pulses of illumination along an illumination path to a plurality of field mirror facets. The field mirror facets receive at least a portion of illumination from the illumination path and direct at least a portion of the illumination to a plurality of pupil mirror facets. The pupil mirror facets receive at least a portion of illumination reflected from the field mirror facets and direct the portion of illumination along a delivery path to a reticle for imaging and/or defect inspection.
Abstract translation: 本公开涉及一种为掩模版检查提供照明的系统和方法。 根据本公开的各种实施例，复用镜系统从多个照明源接收照明脉冲，并将照明脉冲沿照明路径引导到多个场镜面。 场面镜面从照明路径接收照明的至少一部分，并将照明的至少一部分引导到多个光瞳镜面。 瞳孔镜面接收从场镜镜面反射的照明的至少一部分，并将照射部分沿着传送路径引导到掩模版用于成像和/或缺陷检查。
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2.发明申请SPECTRAL PURITY FILTER AND LIGHT MONITOR FOR AN EUV ACTINIC RETICLE INSPECTION SYSTEM 有权欧盟专业检疫系统的光谱滤光片和光监测仪公开(公告)号：US20140217298A1
公开(公告)日：2014-08-07
申请号：US14170808
申请日：2014-02-03
Applicant: KLA-Tencor Corporation
Inventor： Daimian Wang , Li Wang , Frank Chilese , David Alles
IPC: G01N21/88
CPC classification number: G03F1/24 , G01N21/956 , G01N2021/95676 , G03F1/22 , G03F1/84 , G03F7/70033
Abstract: An extreme ultraviolet (EUM) mask inspection system, comprising a light source to project EUV light along an optical axis, an illumination system to receive the EUV light from the source, the illumination system comprising a spectral purity filter (SPF), the SPF transmits a first portion of the EUV light along the optical axis toward a mask and the SPF comprising a plurality of at least partially reflective elements, said elements reflects a second portion of the EUV light off the optical axis, a projection system adapted to receive the first portion of the EUV light after it has illuminated the mask, a first detector array adapted to receive the image, and a second detector array to receive the second portion of the EUV light. The SPF may comprise one or more multilayer interference-type filters. Alternatively, the SPF comprises a thin film filter disposed on a grazing incidence mirror array.
Abstract translation: 一种极光紫外线（EUM）掩模检查系统，包括沿着光轴投射EUV光的光源，用于接收来自源的EUV光的照明系统，该照明系统包括光谱纯度滤光片（SPF），SPF透射 EUV光的第一部分沿着光轴朝向掩模，并且所述SPF包括多个至少部分反射元件，所述元件将所述EUV光的第二部分反射离开所述光轴，所述投影系统适于接收所述第一 所述EUV光在其照亮所述掩模之后的部分，适于接收所述图像的第一检测器阵列，以及用于接收所述EUV光的第二部分的第二检测器阵列。 SPF可以包括一个或多个多层干涉型滤波器。 或者，SPF包括设置在掠入射镜阵列上的薄膜过滤器。
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公开(公告)号：US20140131586A1
公开(公告)日：2014-05-15
申请号：US13786049
申请日：2013-03-05
Applicant: KLA-TENCOR CORPORATION
Inventor： Daimian Wang , Oleg Khodykin , Daniel Wack , Li Wang , Yanwei Liu
IPC: G02B5/18 , G01N21/956
CPC classification number: G02B5/1838 , G01J3/18 , G01N21/956 , G01N2021/95676 , G02B5/203 , G03F1/0092 , G03F1/84
Abstract: Spectral Purity Filters, or SPFs, are disclosed. Such SPFs are designed to block out the 1030 nm drive laser and other undesired out of band light in a EUV mask inspection system. Different phase grating configurations for near normal incidence and grazing incidence are provided in the present disclosure and are configured specifically for EUV mask inspection.
Abstract translation: 公开了光谱纯化过滤器或SPF。 这样的SPF被设计为在EUV掩模检查系统中阻挡1030nm驱动激光器和其它不期望的带外光。 在本公开内容中提供了用于近似法向入射和掠入射的不同相位光栅配置，并且被专门用于EUV掩模检查。
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4.发明申请PHOTOEMISSION MONITORING OF EUV MIRROR AND MASK SURFACE CONTAMINATION IN ACTINIC EUV SYSTEMS 有权欧盟反光镜系统的EUV镜像和掩膜表面污染的照片监测公开(公告)号：US20130313442A1
公开(公告)日：2013-11-28
申请号：US13898705
申请日：2013-05-21
Inventor： Li Wang , Daimian Wang , Yanwei Liu , Alan Michael Aindow
IPC: G01N21/956 , G01N21/94
CPC classification number: G01N21/956 , G01N21/94 , G01N23/2273 , G01N2223/611 , G01N2223/652 , G03F1/86 , G06T7/0004 , H01L31/02168
Abstract: Photoelectron emission mapping systems for use with EUV (extreme ultraviolet) mask inspection and lithography systems are described. The mapping systems may be used to provide photoelectron emission maps for EUV photolithography masks and/or EUV mirrors. The systems use EUV photoelectron sources used for mask inspection or photolithography to impinge EUV light on the masks and/or mirrors. The EUV light generates photoelectron on the surfaces of the mask and/or mirrors and the photoelectrons are collected and analyzed by detectors placed away from optical spaces of the EUV chamber.
Abstract translation: 描述了用于EUV（极紫外）掩模检查和光刻系统的光电子发射测绘系统。 映射系统可用于为EUV光刻掩模和/或EUV反射镜提供光电子发射图。 该系统使用用于掩模检查或光刻的EUV光电子源将EUV光照射在掩模和/或反射镜上。 EUV光在掩模和/或反射镜的表面上产生光电子，并且通过放置在远离EUV室的光学空间的检测器收集和分析光电子。
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Patent Agency Ranking
5.发明授权Spectral purity filter and light monitor for an EUV reticle inspection system 有权用于EUV掩模版检查系统的光谱纯度过滤器和光监测器公开(公告)号：US09348214B2
公开(公告)日：2016-05-24
申请号：US14170808
申请日：2014-02-03
Applicant: KLA-Tencor Corporation
Inventor： Daimian Wang , Li Wang , Frank Chilese , David Alles
CPC classification number: G03F1/24 , G01N21/956 , G01N2021/95676 , G03F1/22 , G03F1/84 , G03F7/70033
Abstract: An extreme ultraviolet (EUM) mask inspection system, comprising a light source to project EUV light along an optical axis, an illumination system to receive the EUV light from the source, the illumination system comprising a spectral purity filter (SPF), the SPF transmits a first portion of the EUV light along the optical axis toward a mask and the SPF comprising a plurality of at least partially reflective elements, said elements reflects a second portion of the EUV light off the optical axis, a projection system adapted to receive the first portion of the EUV light after it has illuminated the mask, a first detector array adapted to receive the image, and a second detector array to receive the second portion of the EUV light. The SPF may comprise one or more multilayer interference-type filters. Alternatively, the SPF comprises a thin film filter disposed on a grazing incidence mirror array.
Abstract translation: 一种极光紫外线（EUM）掩模检查系统，包括沿着光轴投射EUV光的光源，用于接收来自源的EUV光的照明系统，该照明系统包括光谱纯度滤光片（SPF），SPF透射 EUV光的第一部分沿着光轴朝向掩模，并且所述SPF包括多个至少部分反射元件，所述元件将所述EUV光的第二部分反射离开所述光轴，所述投影系统适于接收所述第一 所述EUV光在其照亮所述掩模之后的部分，适于接收所述图像的第一检测器阵列，以及用于接收所述EUV光的第二部分的第二检测器阵列。 SPF可以包括一个或多个多层干涉型滤波器。 或者，SPF包括设置在掠入射镜阵列上的薄膜过滤器。
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6.发明授权Photoemission monitoring of EUV mirror and mask surface contamination in actinic EUV systems 有权光化学EUV系统中EUV镜面和掩模表面污染的光电监测公开(公告)号：US09453801B2
公开(公告)日：2016-09-27
申请号：US13898705
申请日：2013-05-21
Applicant: KLA-Tencor Corporation
Inventor： Li Wang , Daimian Wang , Yanwei Liu , Alan Michael Aindow
IPC: G01N21/956 , G01N21/94 , G03F1/86 , H01L31/0216 , G06T7/00 , G01N23/227
CPC classification number: G01N21/956 , G01N21/94 , G01N23/2273 , G01N2223/611 , G01N2223/652 , G03F1/86 , G06T7/0004 , H01L31/02168
Abstract: Photoelectron emission mapping systems for use with EUV (extreme ultraviolet) mask inspection and lithography systems are described. The mapping systems may be used to provide photoelectron emission maps for EUV photolithography masks and/or EUV mirrors. The systems use EUV photoelectron sources used for mask inspection or photolithography to impinge EUV light on the masks and/or mirrors. The EUV light generates photoelectron on the surfaces of the mask and/or mirrors and the photoelectrons are collected and analyzed by detectors placed away from optical spaces of the EUV chamber.
Abstract translation: 描述了用于EUV（极紫外）掩模检查和光刻系统的光电子发射测绘系统。 映射系统可用于为EUV光刻掩模和/或EUV反射镜提供光电子发射图。 该系统使用用于掩模检查或光刻的EUV光电子源将EUV光照射在掩模和/或反射镜上。 EUV光在掩模和/或反射镜的表面上产生光电子，并且通过放置在远离EUV室的光学空间的检测器收集和分析光电子。
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公开(公告)号：US09151881B2
公开(公告)日：2015-10-06
申请号：US13786049
申请日：2013-03-05
Applicant: KLA-Tencor Corporation
Inventor： Daimian Wang , Oleg Khodykin , Daniel Wack , Li Wang , Yanwei Liu
CPC classification number: G02B5/1838 , G01J3/18 , G01N21/956 , G01N2021/95676 , G02B5/203 , G03F1/0092 , G03F1/84
Abstract: Spectral Purity Filters, or SPFs, are disclosed. Such SPFs are designed to block out the 1030 nm drive laser and other undesired out of band light in a EUV mask inspection system. Different phase grating configurations for near normal incidence and grazing incidence are provided in the present disclosure and are configured specifically for EUV mask inspection.
Abstract translation: 公开了光谱纯化过滤器或SPF。 这样的SPF被设计为在EUV掩模检查系统中阻挡1030nm驱动激光器和其它不期望的带外光。 在本公开内容中提供了用于近似法向入射和掠入射的不同相位光栅配置，并且被专门用于EUV掩模检查。
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8.发明授权公开(公告)号：US09151718B2
公开(公告)日：2015-10-06
申请号：US13782785
申请日：2013-03-01
Applicant: KLA-Tencor Corporation
Inventor： Daimian Wang , Tao-Yi Fu , Damon F. Kvamme
IPC: G01N21/00 , G01N21/88 , G01N21/956
CPC classification number: G01N21/8806 , G01N21/956 , G01N2021/95676
Abstract: The disclosure is directed to a system and method of providing illumination for reticle inspection. According to various embodiments of the disclosure, a multiplexing mirror system receives pulses of illumination from a plurality of illumination sources and directs the pulses of illumination along an illumination path to a plurality of field mirror facets. The field mirror facets receive at least a portion of illumination from the illumination path and direct at least a portion of the illumination to a plurality of pupil mirror facets. The pupil mirror facets receive at least a portion of illumination reflected from the field mirror facets and direct the portion of illumination along a delivery path to a reticle for imaging and/or defect inspection.
Abstract translation: 本公开涉及一种为掩模版检查提供照明的系统和方法。 根据本公开的各种实施例，复用镜系统从多个照明源接收照明脉冲，并将照明脉冲沿照明路径引导到多个场镜面。 场面镜面从照明路径接收照明的至少一部分，并将照明的至少一部分引导到多个光瞳镜面。 瞳孔镜面接收从场镜镜面反射的照明的至少一部分，并将照射部分沿着传送路径引导到掩模版用于成像和/或缺陷检查。
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公开(公告)号：US20140151580A1
公开(公告)日：2014-06-05
申请号：US14082676
申请日：2013-11-18
Applicant: KLA-Tencor Corporation
Inventor： Daimian Wang , Frank Chilese
IPC: G02B27/09
CPC classification number: G02B19/0095 , G02B27/0994 , G03F1/22 , G03F1/84 , Y10T29/49002
Abstract: The present invention is a light homogenizer or light tunnel with highly reflective sides that enable the focusing of EUV illumination. The sides of the homogenizer are cut from a highly polished silicon wafer. The wafer is coated with a reflective coating before the strips are cut from the wafer. The invention also includes a method for flattening the strips and applying a backing to the strips enabling easier manipulation of the strips during assembly and use.
Abstract translation: 本发明是具有高反射侧的光均化器或光通道，其能够聚焦EUV照明。 从高度抛光的硅晶片切割均质器的侧面。 在晶片从晶片切割之前，晶片被涂覆有反射涂层。 本发明还包括一种用于使条带平坦化并将背衬施加到条上的方法，使得在组装和使用期间能够更容易地操纵条。
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