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    Dispersion model for band gap tracking
    4.
    发明授权
    Dispersion model for band gap tracking 有权
    带隙跟踪的色散模型

    公开(公告)号：US09595481B1

    公开(公告)日：2017-03-14

    申请号：US14464640

    申请日：2014-08-20

    Applicant: KLA-Tencor Corporation

    Inventor： Natalia Malkova ,  Leonid Poslavsky ,  Ming Di ,  Qiang Zhao ,  Dawei Hu

    IPC: H01L21/66 ,  G01R31/26 ,  G01N21/95

    CPC classification number: H01L22/12 ,  G01N21/211 ,  G01N21/8422 ,  G01N21/9501 ,  G01N2021/8438 ,  G01N2021/95676 ,  G01R31/2601

    Abstract: Methods and systems for determining band structure characteristics of high-k dielectric films deposited over a substrate based on spectral response data are presented. High throughput spectrometers are utilized to quickly measure semiconductor wafers early in the manufacturing process. Optical models of semiconductor structures capable of accurate characterization of defects in high-K dielectric layers and embedded nanostructures are presented. In one example, the optical dispersion model includes a continuous Cody-Lorentz model having continuous first derivatives that is sensitive to a band gap of a layer of the unfinished, multi-layer semiconductor wafer. These models quickly and accurately represent experimental results in a physically meaningful manner. The model parameter values can be subsequently used to gain insight and control over a manufacturing process.

    Abstract translation: 提出了基于光谱响应数据确定沉积在衬底上的高k电介质膜的带结构特性的方法和系统。 高产量光谱仪用于在制造过程早期快速测量半导体晶圆。 提出了能够精确表征高K电介质层和嵌入式纳米结构中的缺陷的半导体结构的光学模型。 在一个示例中，光学分散模型包括具有对未完成的多层半导体晶片的层的带隙敏感的连续第一导数的连续Cody-Lorentz模型。 这些模型以物理上有意义的方式快速准确地表示实验结果。 模型参数值可以随后用于获得对制造过程的洞察和控制。

    Multi-Oscillator, Continuous Cody-Lorentz Model Of Optical Dispersion
    5.
    发明申请
    Multi-Oscillator, Continuous Cody-Lorentz Model Of Optical Dispersion 有权
    多振荡器，光学色散的连续Cody-Lorentz模型

    公开(公告)号：US20160341792A1

    公开(公告)日：2016-11-24

    申请号：US15158883

    申请日：2016-05-19

    Applicant: KLA-Tencor Corporation

    Inventor： Natalia Malkova ,  Leonid Poslavsky

    IPC: G01R31/308 ,  G01N21/95 ,  H01L21/66

    CPC classification number: G01R31/308 ,  G01N21/211 ,  G01N21/8422 ,  G01N21/9501 ,  G01N2021/213 ,  G01N2201/12 ,  G01R31/44 ,  H01L22/12 ,  H01L22/20

    Abstract: Methods and systems for monitoring band structure characteristics and predicting electrical characteristics of a sample early in a semiconductor manufacturing process flow are presented herein. High throughput spectrometers generate spectral response data from semiconductor wafers. In one example, the measured optical dispersion is characterized by a Gaussian oscillator, continuous Cody-Lorentz model. The measurement results are used to monitor band structure characteristics, including band gap and defects such as charge trapping centers, exciton states, and phonon modes in high-K dielectric layers and embedded nanostructures. The Gaussian oscillator, continuous Cody-Lorentz model can be generalized to include any number of defect levels. In addition, the shapes of absorption defect peaks may be represented by Lorentz functions, Gaussian functions, or both. These models quickly and accurately represent experimental results in a physically meaningful manner. The model parameter values can be subsequently used to gain insight and control over a manufacturing process.

    Abstract translation: 本文介绍了在半导体制造工艺流程中早期监测样品结构特征和预测样品电特性的方法和系统。 高通量光谱仪从半导体晶圆产生光谱响应数据。 在一个示例中，测量的光学色散的特征在于高斯振荡器，连续的Cody-Lorentz模型。 测量结果用于监测高K电介质层和嵌入式纳米结构中的带结构特征，包括带隙和缺陷，例如电荷俘获中心，激子态和声子模式。 高斯振荡器，连续的Cody-Lorentz模型可以推广到包括任何数量的缺陷水平。 此外，吸收缺陷峰的形状可以由洛伦兹函数，高斯函数或两者表示。 这些模型以物理上有意义的方式快速准确地表示实验结果。 模型参数值可以随后用于获得对制造过程的洞察和控制。

    Model for optical dispersion of high-K dielectrics including defects
    6.
    发明授权
    Model for optical dispersion of high-K dielectrics including defects 有权
    包括缺陷的高K电介质的光学色散模型

    公开(公告)号：US09405290B1

    公开(公告)日：2016-08-02

    申请号：US14156303

    申请日：2014-01-15

    Applicant: KLA-Tencor Corporation

    Inventor： Natalia Malkova ,  Leonid Poslavsky

    IPC: G06F19/00 ,  G01R31/26 ,  G05B19/418

    CPC classification number: G01N21/8422 ,  G01N21/211 ,  G01N21/9501 ,  H01L21/00 ,  H01L22/12 ,  Y02P90/14

    Abstract: Methods and systems for determining band structure characteristics of high-k dielectric films deposited over a substrate based on spectral response data are presented. High throughput spectrometers are utilized to quickly measure semiconductor wafers early in the manufacturing process. Optical models of semiconductor structures capable of accurate characterization of defects in high-K dielectric layers and embedded nanostructures are presented. In one example, the optical dispersion model includes a Cody-Lorentz model augmented by one or more oscillator functions sensitive to one or more defects of the unfinished, multi-layer semiconductor wafer. These models quickly and accurately represent experimental results in a physically meaningful manner. The model parameter values can be subsequently used to gain insight and control over a manufacturing process.

    Abstract translation: 提出了基于光谱响应数据确定沉积在衬底上的高k电介质膜的带结构特性的方法和系统。 高产量光谱仪用于在制造过程早期快速测量半导体晶圆。 提出了能够精确表征高K电介质层和嵌入式纳米结构中的缺陷的半导体结构的光学模型。 在一个示例中，光学色散模型包括由对未完成的多层半导体晶片的一个或多个缺陷敏感的一个或多个振荡器函数增强的Cody-Lorentz模型。 这些模型以物理上有意义的方式快速准确地表示实验结果。 模型参数值可以随后用于获得对制造过程的洞察和控制。

    Dispersion model for band gap tracking
    7.
    发明授权
    Dispersion model for band gap tracking 有权

    公开(公告)号：US10410935B1

    公开(公告)日：2019-09-10

    申请号：US15428835

    申请日：2017-02-09

    Applicant: KLA-Tencor Corporation

    Inventor： Natalia Malkova ,  Leonid Poslavsky ,  Ming Di ,  Qiang Zhao ,  Dawei Hu

    IPC: H01L21/66 ,  G01N21/27 ,  G01R31/28 ,  G01R31/308

    Abstract: Methods and systems for determining band structure characteristics of high-k dielectric films deposited over a substrate based on spectral response data are presented. High throughput spectrometers are utilized to quickly measure semiconductor wafers early in the manufacturing process. Optical models of semiconductor structures capable of accurate characterization of defects in high-K dielectric layers and embedded nanostructures are presented. In one example, the optical dispersion model includes a continuous Cody-Lorentz model having continuous first derivatives that is sensitive to a band gap of a layer of the unfinished, multi-layer semiconductor wafer. These models quickly and accurately represent experimental results in a physically meaningful manner. The model parameter values can be subsequently used to gain insight and control over a manufacturing process.

    Multi-oscillator, continuous Cody-Lorentz model of optical dispersion
    8.
    发明授权
    Multi-oscillator, continuous Cody-Lorentz model of optical dispersion 有权

    公开(公告)号：US09664734B2

    公开(公告)日：2017-05-30

    申请号：US15158883

    申请日：2016-05-19

    Applicant: KLA-Tencor Corporation

    Inventor： Natalia Malkova ,  Leonid Poslavsky

    IPC: G01B11/02 ,  G01B7/02 ,  G01N21/21 ,  G01N21/95 ,  H01L21/36 ,  H01L21/66 ,  G01R31/308 ,  G01N21/84

    CPC classification number: G01R31/308 ,  G01N21/211 ,  G01N21/8422 ,  G01N21/9501 ,  G01N2021/213 ,  G01N2201/12 ,  G01R31/44 ,  H01L22/12 ,  H01L22/20

    Abstract: Methods and systems for monitoring band structure characteristics and predicting electrical characteristics of a sample early in a semiconductor manufacturing process flow are presented herein. High throughput spectrometers generate spectral response data from semiconductor wafers. In one example, the measured optical dispersion is characterized by a Gaussian oscillator, continuous Cody-Lorentz model. The measurement results are used to monitor band structure characteristics, including band gap and defects such as charge trapping centers, exciton states, and phonon modes in high-K dielectric layers and embedded nanostructures. The Gaussian oscillator, continuous Cody-Lorentz model can be generalized to include any number of defect levels. In addition, the shapes of absorption defect peaks may be represented by Lorentz functions, Gaussian functions, or both. These models quickly and accurately represent experimental results in a physically meaningful manner. The model parameter values can be subsequently used to gain insight and control over a manufacturing process.

    Multilayer film metrology using an effective media approximation
    9.
    发明授权
    Multilayer film metrology using an effective media approximation 有权

    公开(公告)号：US10429296B2

    公开(公告)日：2019-10-01

    申请号：US16040798

    申请日：2018-07-20

    Applicant: KLA-Tencor Corporation

    Inventor： Mark A. Neil ,  Mikhail Sushchik ,  Natalia Malkova

    IPC: G01N21/39 ,  G01N21/956 ,  G01N21/47 ,  G02B27/58 ,  G01N21/21 ,  G01B11/06

    Abstract: A metrology system includes a controller coupled to a detector to generate a detection signal based on the reflection of an illumination beam from a multilayer film stack. The multilayer film stack may include one or more zones with a repeating pattern of two or more materials. The controller may generate a model of reflection of the illumination beam by modeling the zones as thick films having zone thicknesses and effective permittivity values using an effective medium model relating the effective permittivity values of the zones to permittivity values and volume fractions of constituent materials. The controller may further determine values of the zone thicknesses and the volume fractions using a regression of the detection signal based on the effective medium model and further determine average thickness values of the constituent materials based on the number of films, the zone thicknesses, the volume fractions, and the effective permittivity values.

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