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1.发明申请Wafer Shape and Thickness Measurement System Utilizing Shearing Interferometers 审中-公开使用剪切干涉仪的晶圆形状和厚度测量系统公开(公告)号：US20140293291A1
公开(公告)日：2014-10-02
申请号：US14228483
申请日：2014-03-28
Applicant: KLA-Tencor Corporation
Inventor： Shouhong Tang
IPC: G01B11/24
CPC classification number: G01B11/2441 , G01B9/02021 , G01B9/02027 , G01B11/0675 , G01B2210/56
Abstract: Interferometer systems and methods for measurement of shapes as well as their derivatives and thickness variations of wafers are disclosed. More specifically, shearing interferometry techniques are utilized in such measurement systems. The output of the measurement systems can be utilized to determine at least one of: a surface slope, a surface curvature, a surface height, a shape, and a thickness variation of the wafers.
Abstract translation: 公开了用于测量形状的干涉仪系统和方法及其衍生物和晶片的厚度变化。 更具体地，在这样的测量系统中使用剪切干涉技术。 可以使用测量系统的输出来确定晶片的表面斜率，表面曲率，表面高度，形状和厚度变化中的至少一个。
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2.发明申请Method for Reducing Wafer Shape and Thickness Measurement Errors Resulted From Cavity Shape Changes 有权降低由形状变化导致的晶圆形状和厚度测量误差的方法公开(公告)号：US20130182262A1
公开(公告)日：2013-07-18
申请号：US13742113
申请日：2013-01-15
Applicant: KLA-Tencor Corporation
Inventor： Shouhong Tang , Andrew An Zeng , Yi Zhang , Jie-Fei Zheng
IPC: G01B9/02
CPC classification number: G01B9/02076 , G01B9/02027
Abstract: Methods and systems for reducing wafer shape and thickness measurement errors resulted from cavity shape changes are disclosed. Cavity calibration process is performed immediately before the wafer measurement. Calibrating the cavity characteristics every time the method is executed reduces wafer shape and thickness measurement errors resulted from cavity shape changes. Additionally or alternatively, a polynomial fitting process utilizing a polynomial of at least a second order is utilized for cavity tilt estimation. High order cavity shape information generated using high order polynomials takes into consideration cavity shape changes due to temperature variations, stress or the like, effectively increases accuracy of the wafer shape and thickness information computed.
Abstract translation: 公开了用于减小由腔形变化导致的晶片形状和厚度测量误差的方法和系统。 在晶片测量之前立即进行腔校准处理。 每次执行该方法时校准腔体特性可降低由腔体形状变化导致的晶片形状和厚度测量误差。 附加地或替代地，利用至少二阶多项式的多项式拟合过程用于腔倾斜估计。 使用高阶多项式生成的高阶腔形状信息考虑到由于温度变化，应力等引起的空腔形状变化，有效地提高了计算出的晶片形状和厚度信息的精度。
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公开(公告)号：US10352691B1
公开(公告)日：2019-07-16
申请号：US14325758
申请日：2014-07-08
Applicant: KLA-Tencor Corporation
Inventor： Haiguang Chen , Jaydeep Sinha , Shouhong Tang , Sergey Kamensky
Abstract: Systems and methods for processing phase maps acquired using interferometer wafer geometry tools are disclosed. More specifically, instead of performing phase unwrapping first and then analyze the unwrapped data in a height domain, systems and methods in accordance with the present disclosure operate in a curvature domain without having to perform any phase unwrapping.
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公开(公告)号：US09903708B2
公开(公告)日：2018-02-27
申请号：US15063057
申请日：2016-03-07
Applicant: KLA-Tencor Corporation
Inventor： Chunhai Wang , Chunsheng Huang , Andrew An Zeng , Frederick Arnold Goodman , Shouhong Tang , Yi Zhang
CPC classification number: G01B11/06 , G01B9/02021 , G01B9/0203 , G01B11/24 , G01B11/2441 , G01B2290/70 , G02B17/008 , G02B27/283 , H04N5/225
Abstract: A semiconductor measuring tool has a folding mirror configuration that directs a light beam to pass the same space multiple times to reduce the size and footprint. Furthermore, the folding mirrors may reflect the light beam at less than forty-five degrees; thereby allowing for smaller folding mirrors as compared to the prior art.
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5.发明申请Method and Apparatus to Fold Optics in Tools for Measuring Shape and/or Thickness of a Large and Thin Substrate 有权用于测量大薄薄基板的形状和/或厚度的工具中折叠光学的方法和装置公开(公告)号：US20160265904A1
公开(公告)日：2016-09-15
申请号：US15063057
申请日：2016-03-07
Applicant: KLA-Tencor Corporation
Inventor： Chunhai Wang , Chunsheng Huang , Andrew An Zeng , Frederick Arnold Goodman , Shouhong Tang , Yi Zhang
CPC classification number: G01B11/06 , G01B9/02021 , G01B9/0203 , G01B11/24 , G01B11/2441 , G01B2290/70 , G02B17/008 , G02B27/283 , H04N5/225
Abstract: A semiconductor measuring tool has a folding mirror configuration that directs a light beam to pass the same space multiple times to reduce the size and footprint. Furthermore, the folding mirrors may reflect the light beam at less than forty-five degrees; thereby allowing for smaller folding mirrors as compared to the prior art.
Abstract translation: 半导体测量工具具有折射镜配置，其引导光束多次通过相同的空间以减小尺寸和占地面积。 此外，折叠镜可以以小于四十五度反射光束; 从而允许与现有技术相比较小的折叠镜。
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Patent Agency Ranking
公开(公告)号：US09702829B1
公开(公告)日：2017-07-11
申请号：US14246895
申请日：2014-04-07
Applicant: KLA-Tencor Corporation
Inventor： Haiguang Chen , Jaydeep Sinha , Sergey Kamensky , Enrique Chavez , Shouhong Tang , Mark Plemmons
IPC: G01B9/02 , G01N21/95 , G01N21/956 , G01B11/30
CPC classification number: G01N21/9501 , G01B11/30 , G01B11/303 , G01B11/306 , G01B2210/56 , G01N21/956
Abstract: Interferometer systems and methods for providing improved defect detection and quantification are disclosed. The systems and methods in accordance with the present disclosure may detect surface defects on patterned or bare wafer surfaces and subsequently quantify them. In certain embodiments in accordance with the present disclosure, amplitude maps of the wafer surfaces are obtained and are utilized in addition/alternative to phase maps for wafer surface feature detection. Furthermore, local one-dimensional and/or two-dimensional unwrapping techniques are also disclosed and are utilized in certain embodiments in accordance with the present disclosure to provide height and depth information of the detected defects, further improving the detection capabilities of the measurement systems.
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7.发明授权公开(公告)号：US09163928B2
公开(公告)日：2015-10-20
申请号：US13864701
申请日：2013-04-17
Applicant: KLA-Tencor Corporation
Inventor： Shouhong Tang , Chunhai Wang , Andrew An Zeng
CPC classification number: G01B9/02072 , G01B9/02021 , G01B9/02027 , G01B11/06 , G01B11/2441
Abstract: A calibration wafer and a method for calibrating an interferometer system are disclosed. The calibration method includes: determining locations of the holes defined in the calibration wafer based on two opposite intensity frame; comparing the locations of the holes against the locations measured utilizing an external measurement device; adjusting a first optical magnification or a second optical magnification at least partially based on the comparison result; defining a distortion map for each of the first and second intensity frames based on the comparison of the locations of the holes; generating an extended distortion map for each of the first and second intensity frames by map fitting the distortion map; and utilizing the extended distortion map for each of the first and second intensity frames to reduce at least one of: a registration error or an optical distortion in a subsequent measurement process.
Abstract translation: 公开了一种用于校准干涉仪系统的校准晶片和方法。 校准方法包括：基于两个相对强度的帧确定校准晶片中限定的孔的位置; 比较孔的位置与使用外部测量装置测量的位置; 至少部分地基于比较结果调整第一光学倍率或第二光学倍率; 基于孔的位置的比较来定义第一和第二强度帧中的每一个的失真图; 通过映射拟合失真图来生成第一和第二强度帧中的每一个的扩展失真图; 以及利用所述第一和第二强度帧中的每一个的所述扩展失真图来减少随后测量过程中的注册误差或光学失真中的至少一个。
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8.发明授权Method for reducing wafer shape and thickness measurement errors resulted from cavity shape changes 有权降低晶体形状和厚度测量误差的方法是由腔形变化引起的公开(公告)号：US09121684B2
公开(公告)日：2015-09-01
申请号：US13742113
申请日：2013-01-15
Applicant: KLA-Tencor Corporation
Inventor： Shouhong Tang , Andrew An Zeng , Yi Zhang , Jie-Fei Zheng
CPC classification number: G01B9/02076 , G01B9/02027
Abstract: Methods and systems for reducing wafer shape and thickness measurement errors resulted from cavity shape changes are disclosed. Cavity calibration process is performed immediately before the wafer measurement. Calibrating the cavity characteristics every time the method is executed reduces wafer shape and thickness measurement errors resulted from cavity shape changes. Additionally or alternatively, a polynomial fitting process utilizing a polynomial of at least a second order is utilized for cavity tilt estimation. High order cavity shape information generated using high order polynomials takes into consideration cavity shape changes due to temperature variations, stress or the like, effectively increases accuracy of the wafer shape and thickness information computed.
Abstract translation: 公开了用于减小由腔形变化导致的晶片形状和厚度测量误差的方法和系统。 在晶片测量之前立即进行腔校准处理。 每次执行该方法时校准腔体特性可降低由腔体形状变化导致的晶片形状和厚度测量误差。 附加地或替代地，利用至少二阶多项式的多项式拟合过程用于腔倾斜估计。 使用高阶多项式生成的高阶腔形状信息考虑到由于温度变化，应力等引起的空腔形状变化，有效地提高了计算出的晶片形状和厚度信息的精度。
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9.发明申请REDUCING REGISTRATION ERROR OF FRONT AND BACK WAFER SURFACES UTILIZING A SEE-THROUGH CALIBRATION WAFER 审中-公开使用透彻的校准波形减少正面和背面表面的注册错误公开(公告)号：US20150192404A1
公开(公告)日：2015-07-09
申请号：US14661718
申请日：2015-03-18
Applicant: KLA-Tencor Corporation
Inventor： Shouhong Tang , Andrew Zeng , Chunhai Wang , Yaroslov Dudin , Steve Yifeng Cui , Jei-Fei Zheng , Yi Zhang
CPC classification number: G01B9/02072 , G01B3/30 , G01B9/02021 , G01B9/02027 , G01B11/06 , G01B11/2441 , G01B21/042 , G01B2210/44 , G01B2210/48
Abstract: A calibration wafer and a method for calibrating an interferometer system are disclosed. The calibration method includes: determining locations of the holes defined in the calibration wafer based on two opposite intensity frame; comparing the locations of the holes against the locations measured utilizing an external measurement device; adjusting a first optical magnification or a second optical magnification at least partially based on the comparison result; defining a first distortion map for each of the first and second intensity frames based on the comparison of the locations of the holes; generating an extended distortion map for each of the first and second intensity frames by map fitting the first distortion map; and utilizing the extended distortion map for each of the first and second intensity frames to reduce at least one of: a registration error or an optical distortion in a subsequent measurement process.
Abstract translation: 公开了一种用于校准干涉仪系统的校准晶片和方法。 校准方法包括：基于两个相对强度的帧确定校准晶片中限定的孔的位置; 比较孔的位置与使用外部测量装置测量的位置; 至少部分地基于比较结果调整第一光学倍率或第二光学倍率; 基于孔的位置的比较，为第一和第二强度帧中的每一个定义第一失真图; 通过对所述第一和第二强度帧中的每一个通过映射拟合所述第一失真图来生成扩展失真图; 以及利用所述第一和第二强度帧中的每一个的所述扩展失真图来减少随后测量过程中的注册误差或光学失真中的至少一个。
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公开(公告)号：US09074873B1
公开(公告)日：2015-07-07
申请号：US13756187
申请日：2013-01-31
Applicant: KLA-Tencor Corporation
Inventor： Shouhong Tang
CPC classification number: G01B11/06 , G01B11/24 , G01B2210/44 , G01B2210/48
Abstract: The present disclosure is directed to a system for measuring a thickness variation and a shape of a wafer. The system includes a first reference flat and a second reference flat. The first reference flat and the second reference flat are spaced apart to form a cavity. The cavity is configured to receive the wafer. The system also includes a plate. The plate may be inserted into the cavity with the wafer. The system also includes a first interferometer located on a first side of the cavity and a second interferometer located on a second side of the cavity. The system also includes a processor which may be in communication with the first interferometer and the second interferometer. The processor is configured to determine the thickness variation and the shape of the wafer based on at least the readings of the first interferometer and the second interferometer.
Abstract translation: 本公开涉及用于测量晶片的厚度变化和形状的系统。 该系统包括第一参考平面和第二参考平面。 第一参考平面和第二参考平面间隔开以形成空腔。 腔被配置为接收晶片。 该系统还包括一个板。 板可以与晶片一起插入空腔中。 该系统还包括位于空腔的第一侧上的第一干涉仪和位于空腔第二侧的第二干涉仪。 该系统还包括可以与第一干涉仪和第二干涉仪通信的处理器。 处理器被配置为至少基于第一干涉仪和第二干涉仪的读数确定晶片的厚度变化和形状。
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