公开(公告)号：US20210202215A1

公开(公告)日：2021-07-01

申请号：US17200372

申请日：2021-03-12

Applicant: KOKUSAI ELECTRIC CORPORATION

Inventor： Akihiro SATO ,  Tsuyoshi TAKEDA ,  Yukitomo HIROCHI

IPC: H01J37/32 ,  C23C16/509 ,  H05H1/46 ,  C23C16/458 ,  C23C16/50 ,  C23C16/52 ,  H01L21/02

Abstract: There is provided a substrate processing apparatus that includes a substrate support configured to support one or more substrates, a process chamber in which the one or more substrates are processed, a gas supplier configured to supply gas, and a plasma generator including a plurality of first rod-shaped electrodes connected to a high-frequency power supply; and a second rod-shaped electrode installed between two first rod-shaped electrodes is grounded; and a buffer structure configured to accommodate the plurality of first rod-shaped electrodes and the second rod-shaped electrode, and having a first wall surface on which a gas supply port that supplies gas into the process chamber is installed. Wherein the plasma generator is configured to convert gas into plasma by the plurality of first rod-shaped electrodes and the second rod-shaped electrode to supply the plasma-converted gas to the process chamber from the gas supply port.

公开(公告)号：US20230238222A9

公开(公告)日：2023-07-27

申请号：US17200414

申请日：2021-03-12

Applicant: KOKUSAI ELECTRIC CORPORATION

Inventor： Akihiro SATO ,  Tsuyoshi TAKEDA ,  Yukitomo HIROCHI

IPC: H01J37/32 ,  C23C16/509 ,  H05H1/46 ,  C23C16/458 ,  C23C16/50 ,  C23C16/52 ,  H01L21/02

CPC classification number: H01J37/32568 ,  C23C16/509 ,  H05H1/46 ,  C23C16/4587 ,  C23C16/50 ,  C23C16/52 ,  H01J2237/3323 ,  H01J37/32834 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02211 ,  H01J2237/327 ,  H01J37/3244

Abstract: There is provided a plasma generating device that includes a first electrode connected to a high-frequency power supply, and a second electrode to be grounded, a buffer structure configured to form a buffer chamber that accommodates the first and second electrodes wherein the first electrode and the second electrode are alternately arranged such that a number of electrodes of the first electrode and the second electrode are in an odd number of three or more in total, and wherein the second electrode is used in common for two of the first electrode being respectively adjacent to the second electrode used in common, and wherein a gas supply port that supplies gas into a process chamber is installed on a wall surface of the buffer structure.

公开(公告)号：US20230020318A1

公开(公告)日：2023-01-19

申请号：US17951374

申请日：2022-09-23

Applicant: KOKUSAI ELECTRIC CORPORATION

Inventor： Akihiro SATO ,  Tsuyoshi TAKEDA ,  Yukitomo HIROCHI

IPC: H01J37/32 ,  C23C16/509 ,  H05H1/46 ,  C23C16/458 ,  C23C16/50 ,  C23C16/52 ,  H01L21/02

Abstract: There is provided a substrate processing apparatus that includes a process chamber in which at least one substrate is processed; a gas supplier configured to supply a gas; and a buffer structure. The buffer structure includes at least two plasma generation regions in which gas is converted into plasma by a pair of electrodes connected to a high-frequency power supply and an electrode to be grounded, a first gas supply port that supplies a gas generated in a first plasma generation region among the at least two plasma generation regions, and a second gas supply port that supplies a gas generated in a second plasma generation region among the at least two plasma generation regions.

公开(公告)号：US20190390333A1

公开(公告)日：2019-12-26

申请号：US16451507

申请日：2019-06-25

Applicant: KOKUSAI ELECTRIC CORPORATION

Inventor： Masaya NISHIDA ,  Nobuhito SHIMA ,  Akihiro SATO ,  Yosuke KUWATA ,  Kenichi MAEDA

IPC: C23C16/44 ,  C23C16/34 ,  C23C16/52 ,  H01L21/02

Abstract: There is provided a technique that includes executing a process recipe for processing a substrate; and executing a correction recipe for checking a characteristic value of a supply valve installed at a process gas supply line, wherein the act of executing the correction recipe comprises: supplying an inert gas into the process gas supply line for a certain period of time in a state where an adjusting valve that is installed at an exhaust portion of a process furnace and adjusts an internal pressure of the process furnace is fully opened; detecting a pressure value in a supply pipe provided with the supply valve while supplying the inert gas into the process gas supply line in the state where the adjusting valve is fully opened; and calculating the characteristic value of the supply valve based on the detected pressure value.

公开(公告)号：US20240249923A1

公开(公告)日：2024-07-25

申请号：US18624655

申请日：2024-04-02

Applicant: Kokusai Electric Corporation

Inventor： Akihiro SATO ,  Tsuyoshi Takeda ,  Yukitomo Hirochi

IPC: H01J37/32 ,  C23C16/458 ,  C23C16/50 ,  C23C16/509 ,  C23C16/52 ,  H01L21/02 ,  H05H1/46

CPC classification number: H01J37/32568 ,  C23C16/4587 ,  C23C16/50 ,  C23C16/509 ,  C23C16/52 ,  H01J37/3244 ,  H01J37/32834 ,  H01L21/0217 ,  H01L21/02274 ,  H05H1/46 ,  H01J2237/327 ,  H01J2237/3323 ,  H01L21/02211 ,  H01L21/0228

Abstract: There is provided a substrate processing apparatus that includes a process chamber in which at least one substrate is processed; a gas supplier configured to supply a gas; and a buffer structure. The buffer structure includes at least two plasma generation regions in which gas is converted into plasma by a pair of electrodes connected to a high-frequency power supply and an electrode to be grounded, a first gas supply port that supplies a gas generated in a first plasma generation region among the at least two plasma generation regions, and a second gas supply port that supplies a gas generated in a second plasma generation region among the at least two plasma generation regions.

公开(公告)号：US20230144886A1

公开(公告)日：2023-05-11

申请号：US18072278

申请日：2022-11-30

Applicant: KOKUSAI ELECTRIC CORPORATION

Inventor： Masaya NISHIDA ,  Nobuhito SHIMA ,  Akihiro SATO ,  Yosuke KUWATA ,  Kenichi MAEDA

IPC: C23C16/44 ,  C23C16/34 ,  H01L21/02 ,  C23C16/52 ,  H01L21/66

CPC classification number: C23C16/4408 ,  C23C16/52 ,  C23C16/345 ,  H01L21/0217 ,  H01L21/0228 ,  H01L22/10

Abstract: There is provided a technique that includes executing a process recipe for processing a substrate; and executing a correction recipe for checking a characteristic value of a supply valve installed at a process gas supply line, wherein the act of executing the correction recipe comprises: supplying an inert gas into the process gas supply line for a certain period of time in a state where an adjusting valve that is installed at an exhaust portion of a process furnace and adjusts an internal pressure of the process furnace is fully opened; detecting a pressure value in a supply pipe provided with the supply valve while supplying the inert gas into the process gas supply line in the state where the adjusting valve is fully opened; and calculating the characteristic value of the supply valve based on the detected pressure value.

公开(公告)号：US20210202216A1

公开(公告)日：2021-07-01

申请号：US17200414

申请日：2021-03-12

Applicant: KOKUSAI ELECTRIC CORPORATION

Inventor： Akihiro SATO ,  Tsuyoshi TAKEDA ,  Yukitomo HIROCHI

IPC: H01J37/32 ,  C23C16/509 ,  H05H1/46 ,  C23C16/458 ,  C23C16/50 ,  C23C16/52 ,  H01L21/02

Abstract: There is provided a plasma generating device that includes a first electrode connected to a high-frequency power supply, and a second electrode to be grounded, a buffer structure configured to form a buffer chamber that accommodates the first and second electrodes wherein the first electrode and the second electrode are alternately arranged such that a number of electrodes of the first electrode and the second electrode are in an odd number of three or more in total, and wherein the second electrode is used in common for two of the first electrode being respectively adjacent to the second electrode used in common, and wherein a gas supply port that supplies gas into a process chamber is installed on a wall surface of the buffer structure.

公开(公告)号：US20220325413A1

公开(公告)日：2022-10-13

申请号：US17846775

申请日：2022-06-22

Applicant: Kokusai Electric Corporation

Inventor： Akihiro SATO ,  Shuhei SAIDO ,  Kenta KASAMATSU

IPC: C23C16/46

Abstract: According to one aspect of a technique the present disclosure, there is provided a substrate processing apparatus including: a substrate retainer provided with a heat insulating region at a lower portion thereof; a first reaction tube with open upper and lower ends; a second reaction tube with a closed upper end and an open lower end; a furnace opening flange provided with a holder in a first space between the first reaction tube and the second reaction tube; a heater covering the second reaction tube to heat a substrate arranged in the substrate retainer in the first reaction tube; a first highly reflective structure provided in the heat insulating region; and a second highly reflective structure arranged at the holder provided at the furnace opening flange and along an inner wall of the second reaction tube at a lower portion of the second reaction tube in the first space.

公开(公告)号：US20200219717A1

公开(公告)日：2020-07-09

申请号：US16820047

申请日：2020-03-16

Applicant: KOKUSAI ELECTRIC CORPORATION

Inventor： Akihiro SATO ,  Daisuke HARA

IPC: H01L21/02 ,  C23C16/505 ,  C23C16/455

Abstract: A substrate processing apparatus includes: a process chamber configured to process a substrate; a precursor gas supply section for supplying a precursor gas; a reactant gas supply section for supplying a reactant gas; an exhauster for exhausting the process chamber; a plasma generator including first and second plasma generators for converting the reactant gas into plasma to activate the reactant gas, the first and second plasma generators being disposed so that a straight line passing through the center of the process chamber and the exhauster is interposed therebetween; and a gas rectifier including a first partition member disposed along an inner wall of the process chamber between the precursor gas supply section and the first plasma generator, and a second partition member disposed at an outer circumferential portion of the substrate along an inner wall of the process chamber between the precursor gas supply section and the second plasma generator.

公开(公告)号：US20190157049A1

公开(公告)日：2019-05-23

申请号：US16250673

申请日：2019-01-17

Applicant: KOKUSAI ELECTRIC CORPORATION

Inventor： Akihiro SATO ,  Tsuyoshi TAKEDA ,  Yukitomo HIROCHI

IPC: H01J37/32 ,  C23C16/50 ,  C23C16/52 ,  C23C16/458 ,  H01L21/02

Abstract: There is provided a plasma generating device that includes a first electrode connected to a high-frequency power supply, and a second electrode to be grounded, wherein the first electrode and the second electrode are alternately arranged such that a number of electrodes of the first electrode and the second electrode are in an odd number of three or more in total, and wherein the second electrode is used in common for two of the first electrode being respectively adjacent to the second electrode used in common.