公开(公告)号：US20230207261A1

公开(公告)日：2023-06-29

申请号：US18083060

申请日：2022-12-16

Applicant: Kokusai Electric Corporation

Inventor： Daisuke HARA ,  Tatsuya NISHINO ,  Tsuyoshi TAKEDA

IPC: H01J37/32

CPC classification number: H01J37/32091 ,  H01J37/32577 ,  H01J37/32568 ,  H01J37/32715

Abstract: There is provided a technique that includes: a process chamber in which a substrate is processed; a plurality of first electrodes; a plurality of second electrodes; a high-frequency power supply configured to supply a high-frequency power; a high-frequency power application plate configured to connect the plurality of first electrodes to the high-frequency power supply; and a grounding plate configured to ground the plurality of second electrodes.

公开(公告)号：US20210202216A1

公开(公告)日：2021-07-01

申请号：US17200414

申请日：2021-03-12

Applicant: KOKUSAI ELECTRIC CORPORATION

Inventor： Akihiro SATO ,  Tsuyoshi TAKEDA ,  Yukitomo HIROCHI

IPC: H01J37/32 ,  C23C16/509 ,  H05H1/46 ,  C23C16/458 ,  C23C16/50 ,  C23C16/52 ,  H01L21/02

Abstract: There is provided a plasma generating device that includes a first electrode connected to a high-frequency power supply, and a second electrode to be grounded, a buffer structure configured to form a buffer chamber that accommodates the first and second electrodes wherein the first electrode and the second electrode are alternately arranged such that a number of electrodes of the first electrode and the second electrode are in an odd number of three or more in total, and wherein the second electrode is used in common for two of the first electrode being respectively adjacent to the second electrode used in common, and wherein a gas supply port that supplies gas into a process chamber is installed on a wall surface of the buffer structure.

公开(公告)号：US20210183670A1

公开(公告)日：2021-06-17

申请号：US17188034

申请日：2021-03-01

Applicant: KOKUSAI ELECTRIC CORPORATION

Inventor： Daisuke HARA ,  Takashi YAHATA ,  Tsuyoshi TAKEDA ,  Kenji ONO ,  Kazuhiko YAMAZAKI

IPC: H01L21/67 ,  H01L21/687 ,  H01L21/02 ,  H01J37/32

Abstract: Described herein is a technique capable of efficiently removing a foreign substance in a reaction tube. According to one aspect of the technique, there is provided a substrate processing apparatus including: a reaction tube in which a substrate is processed; and a substrate retainer including a plurality of support columns configured to support the substrate, wherein at least one among the plurality of the support columns includes: a hollow portion through which an inert gas is supplied; and a gas supply port through which the inert gas is supplied toward an inner wall of the reaction tube.

公开(公告)号：US20200312632A1

公开(公告)日：2020-10-01

申请号：US16815284

申请日：2020-03-11

Applicant: KOKUSAI ELECTRIC CORPORATION

Inventor： Daisuke HARA ,  Takashi YAHATA ,  Tsuyoshi TAKEDA ,  Kenji ONO ,  Kazuhiko YAMAZAKI

IPC: H01J37/32 ,  C23C16/458 ,  C23C16/50 ,  C23C16/44

Abstract: There is provided a technique that includes: a reaction tube configured to process a plurality of substrates; a substrate support configured to support the plurality of substrates stacked in multiple stages; a buffer chamber that is at least located at a position of height from a lowermost substrate to an uppermost substrate supported by the substrate support, and is installed along an inner wall of the reaction tube; and an electrode for plasma generation that is inserted from a lower portion of the buffer chamber into an upper portion of the buffer chamber through a side surface of the reaction tube, the electrode being configured to activate the processing gas by plasma inside the buffer chamber thereby applying high-frequency power to the electrode by a power supply.

公开(公告)号：US20240412987A1

公开(公告)日：2024-12-12

申请号：US18808738

申请日：2024-08-19

Applicant: Kokusai Electric Corporation

Inventor： Tsuyoshi TAKEDA ,  Daisuke HARA

IPC: H01L21/67 ,  H01J37/32

Abstract: There is provided a substrate processing apparatus, comprising: a reaction tube in which a substrate is processed; and a plurality of electrodes including at least one first electrode to which a predetermined potential is applied and at least one second electrode to which a reference potential is applied. Two or more of the at least one first electrode or the at least one second electrode are arranged side-by-side in a cross sectional view perpendicular to a vertical direction of the reaction tube.

公开(公告)号：US20240312764A1

公开(公告)日：2024-09-19

申请号：US18436809

申请日：2024-02-08

Applicant: Kokusai Electric Corporation

Inventor： Tsuyoshi TAKEDA ,  Daisuke HARA

IPC: H01J37/32 ,  H03H7/38

CPC classification number: H01J37/32183 ,  H03H7/38 ,  H01J2237/327

Abstract: There is provided a technique capable of sufficiently stabilizing a generation of a plasma by avoiding an improper impedance matching. There is provided a technique that includes: an input structure configured to receive a high frequency power, an output structure configured to output the high frequency power; a matching structure containing a variable inductor with a variable inductance; and a variable inductance regulator capable of varying the inductance of the variable inductor.

公开(公告)号：US20240047180A1

公开(公告)日：2024-02-08

申请号：US18025621

申请日：2021-09-09

Applicant: Kokusai Electric Corporation

Inventor： Daisuke HARA ,  Takashi YAHATA ,  Tsuyoshi TAKEDA

IPC: H01J37/32

CPC classification number: H01J37/32669 ,  H01J37/32743 ,  H01J2237/3387

Abstract: There is provided a technique that includes a process chamber in which a substrate is processed, a substrate retainer on which a plurality of substrates are stacked in multiple stages, a plasma generator generating plasma inside the process chamber, and a magnet generating a magnetic field inside the process chamber.

公开(公告)号：US20230307212A1

公开(公告)日：2023-09-28

申请号：US18171015

申请日：2023-02-17

Applicant: Kokusai Electric Corporation

Inventor： Tsuyoshi TAKEDA ,  Daisuke HARA ,  Hiroshi NAKAJO ,  Iichiro TSUCHIKURA

IPC: H01J37/32

CPC classification number: H01J37/32568 ,  H01J37/32541 ,  H01J37/32091 ,  H01J37/32449 ,  H01J37/32522

Abstract: According to the present disclosure, there is provided a technique capable of performing a substrate processing more uniformly. According to one aspect thereof, there is provided an electrode structure capable of generating a plasma, including: a first electrode group constituted by: at least one first electrode to which an electric potential is applied; at least one second electrode whose length is different from that of the first electrode and to which an electric potential is applied; and at least one third electrode to which a reference potential is applied; and a second electrode group constituted by: at least one fourth electrode to which an electric potential is applied; at least one fifth electrode whose length is different from that of the fourth electrode and to which an electric potential is applied; and at least one sixth electrode to which the reference potential is applied.

公开(公告)号：US20230238222A9

公开(公告)日：2023-07-27

申请号：US17200414

申请日：2021-03-12

Applicant: KOKUSAI ELECTRIC CORPORATION

Inventor： Akihiro SATO ,  Tsuyoshi TAKEDA ,  Yukitomo HIROCHI

IPC: H01J37/32 ,  C23C16/509 ,  H05H1/46 ,  C23C16/458 ,  C23C16/50 ,  C23C16/52 ,  H01L21/02

CPC classification number: H01J37/32568 ,  C23C16/509 ,  H05H1/46 ,  C23C16/4587 ,  C23C16/50 ,  C23C16/52 ,  H01J2237/3323 ,  H01J37/32834 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02211 ,  H01J2237/327 ,  H01J37/3244

Abstract: There is provided a plasma generating device that includes a first electrode connected to a high-frequency power supply, and a second electrode to be grounded, a buffer structure configured to form a buffer chamber that accommodates the first and second electrodes wherein the first electrode and the second electrode are alternately arranged such that a number of electrodes of the first electrode and the second electrode are in an odd number of three or more in total, and wherein the second electrode is used in common for two of the first electrode being respectively adjacent to the second electrode used in common, and wherein a gas supply port that supplies gas into a process chamber is installed on a wall surface of the buffer structure.

公开(公告)号：US20230020318A1

公开(公告)日：2023-01-19

申请号：US17951374

申请日：2022-09-23

Applicant: KOKUSAI ELECTRIC CORPORATION

Inventor： Akihiro SATO ,  Tsuyoshi TAKEDA ,  Yukitomo HIROCHI

IPC: H01J37/32 ,  C23C16/509 ,  H05H1/46 ,  C23C16/458 ,  C23C16/50 ,  C23C16/52 ,  H01L21/02

Abstract: There is provided a substrate processing apparatus that includes a process chamber in which at least one substrate is processed; a gas supplier configured to supply a gas; and a buffer structure. The buffer structure includes at least two plasma generation regions in which gas is converted into plasma by a pair of electrodes connected to a high-frequency power supply and an electrode to be grounded, a first gas supply port that supplies a gas generated in a first plasma generation region among the at least two plasma generation regions, and a second gas supply port that supplies a gas generated in a second plasma generation region among the at least two plasma generation regions.