公开(公告)号：US11705549B2

公开(公告)日：2023-07-18

申请号：US16952087

申请日：2020-11-19

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Ji-Won Choi ,  Jin Sang Kim ,  Chong Yun Kang ,  Seung Hyub Baek ,  Seong Keun Kim ,  Hyun-Cheol Song ,  Sang Tae Kim ,  Hyun Seok Lee

IPC: H01M4/04 ,  H01M10/052 ,  H01M4/58 ,  H01M4/02

CPC classification number: H01M4/0404 ,  H01M4/58 ,  H01M10/052 ,  H01M2004/021 ,  H01M2004/027

Abstract: Disclosed is a transparent anode thin film comprising a transparent anode active material layer, wherein the transparent anode active material layer comprises a Si-based anode active material having a composition represented by the following [Chemical Formula 1]:

SiNx  [Chemical Formula 1]



(wherein 0

公开(公告)号：US11733543B2

公开(公告)日：2023-08-22

申请号：US16044510

申请日：2018-07-25

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Ji-Won Choi ,  Yong-Won Song ,  Hyunjung Yi ,  Jin Sang Kim ,  Chong Yun Kang ,  Seong Keun Kim ,  Seung Hyub Baek ,  Sang Tae Kim ,  Hyun Seok Lee

IPC: G02C7/04 ,  H01M4/64 ,  H01M10/0562 ,  H01M4/04 ,  H01M10/058 ,  H01M10/04 ,  G02C11/00 ,  H02J50/10 ,  H01M6/40

CPC classification number: G02C7/04 ,  G02C11/10 ,  H01M4/0426 ,  H01M4/64 ,  H01M10/0436 ,  H01M10/058 ,  H01M10/0562 ,  H01M6/40 ,  H01M2220/30 ,  H01M2300/0068 ,  H02J50/10

Abstract: Disclosed herein is a smart wearable lens mounted with an all-solid-state thin film secondary battery including a flexible substrate, a cathode current collector, a cathode, a solid electrolyte, an anode, and an anode current collector. The smart wearable lens mounted with the all-solid-state thin film secondary battery may be stably and continuously supplied with power and has a low self-discharge rate. In addition, the smart wearable lens may minimize aversion when humans are wearing the smart wearable lens and be suitably used for a curved lens, especially a micro-lens such as a contact lens.

公开(公告)号：US11245345B2

公开(公告)日：2022-02-08

申请号：US16296218

申请日：2019-03-08

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Hyun-Cheol Song ,  Chong Yun Kang ,  Jin Sang Kim ,  Ji-won Choi ,  Seung Hyub Baek ,  Seong Keun Kim ,  Sang Tae Kim ,  Youn-hwan Shin

IPC: H02N2/18 ,  H01L41/04 ,  H01L41/113 ,  H01L41/053

Abstract: Provided is a self-resonance tuning piezoelectric energy harvester. The self-resonance tuning piezoelectric energy harvester includes a piezoelectric beam which extends along a horizontal direction, a fixing element which fixes two ends of the piezoelectric beam, and a mass which is connected to the piezoelectric beam movably along the piezoelectric beam, wherein the mass includes a through-hole through which the piezoelectric beam passes, and makes the movement through the through-hole. According to the principle of continuous movement to the resonance position, the mass of the self-resonance tuning piezoelectric energy harvester induces the piezoelectric beam to generate displacement to the maximum and maximize the electricity production capacity of the piezoelectric energy harvester.

公开(公告)号：US11417516B2

公开(公告)日：2022-08-16

申请号：US16225432

申请日：2018-12-19

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY ,  INSTITUTE FOR BASIC SCIENCE ,  ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Seong Keun Kim ,  Woo Chui Lee ,  Sang Tae Kim ,  Hyun Cheol Song ,  Seung Hyub Baek ,  Ji Won Choi ,  Jin Sang Kim ,  Chong Yun Kang ,  Christopher W. Bielawski ,  Jung Hwan Yum ,  Eric S. Larsen

IPC: C01F3/02 ,  H01L21/02 ,  H01L27/108 ,  H01L49/02

Abstract: Provided is a dielectric layer that has a rock salt structure in a room temperature stable phase. The dielectric layer is made of a compound having a chemical formula of BexM1-xO, where M includes one of alkaline earth metals and x has a value greater than 0 and not greater than 0.19. A semiconductor memory device also is provided that includes a capacitor composed of a lower electrode; a dielectric layer disposed on the lower electrode; and an upper electrode disposed on the dielectric layer, wherein the dielectric layer has a rocksalt structure in a room temperature stable phase and is made of a compound having a chemical formula shown below, BexM1-xO, where M comprises an alkaline earth metal and x has a value greater than 0 and not greater than 0.19.

公开(公告)号：US10685762B2

公开(公告)日：2020-06-16

申请号：US15990824

申请日：2018-05-29

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Ji-Won Choi ,  Jin Sang Kim ,  Chong Yun Kang ,  Seong Keun Kim ,  Seung Hyub Baek ,  Sang Tae Kim ,  Won Jae Lee ,  Narendra Singh Parmar ,  Young-Shin Lee

IPC: H01B1/22 ,  H01L29/20 ,  H01L21/288 ,  H01L21/285 ,  H01L29/45 ,  C08L29/04 ,  C08K3/22

Abstract: The present disclosure relates to a paste for ohmic contact to p-type semiconductor, including a metal oxide and a binder, wherein the metal oxide is a rhenium oxide or a molybdenum oxide.