公开(公告)号：US09263144B2

公开(公告)日：2016-02-16

申请号：US14187500

申请日：2014-02-24

Applicant: Kabushiki Kaisha Toshiba

Inventor： Hiroshi Ito ,  Hiroshi Maejima

IPC: G11C11/34 ,  G11C16/06 ,  G11C16/26 ,  G11C16/10 ,  G11C16/14 ,  G11C16/04 ,  G11C16/08 ,  G11C16/24

CPC classification number: G11C16/26 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/10 ,  G11C16/14 ,  G11C16/24

Abstract: According to one embodiment, a semiconductor memory device includes a first sub-array including a plurality of first memory cells; a second sub-array including a plurality of second memory cells; a first bit line electrically connected to a first group of the first memory cells; a second bit line electrically connected to a first group of the second memory cells; a bit line connection unit configured to connect the first bit line and the second bit line; a first sense amplifier configured to receive a first voltage from either of the first bit line and the second bit line in a read operation, and transfer a second voltage either of the first bit line and the second bit line in a write operation; a first source line electrically connected to the first memory cells; a second source line electrically connected to the second memory cells; and a source line driver configured to apply voltages to the first source line and the second source line.

Abstract translation: 根据一个实施例，半导体存储器件包括包括多个第一存储器单元的第一子阵列; 包括多个第二存储单元的第二子阵列; 电连接到第一组第一存储单元的第一位线; 电连接到第一组第二存储器单元的第二位线; 配置为连接第一位线和第二位线的位线连接单元; 第一读出放大器，被配置为在读取操作中从第一位线和第二位线中的任一个接收第一电压，并且在写入操作中传送第一位线和第二位线中的任一个的第二电压; 电连接到第一存储器单元的第一源极线; 电连接到第二存储器单元的第二源极线; 以及被配置为向第一源极线和第二源极线施加电压的源极线驱动器。

公开(公告)号：US09099386B2

公开(公告)日：2015-08-04

申请号：US13785400

申请日：2013-03-05

Applicant: Kabushiki Kaisha Toshiba

Inventor： Tsutomu Kakuno ,  Ryuichi Togawa ,  Hiroshi Ito

IPC: H01L21/20 ,  H01L21/263 ,  B23K26/00 ,  B23K26/073 ,  B23K26/08 ,  C30B1/02 ,  C30B28/08 ,  C30B29/06 ,  C30B35/00 ,  H01L21/268

CPC classification number: H01L21/2636 ,  B23K26/0738 ,  B23K26/083 ,  B23K26/352 ,  C30B1/02 ,  C30B1/023 ,  C30B28/08 ,  C30B29/06 ,  C30B35/00 ,  H01L21/268

Abstract: According to one embodiment, a laser annealing method includes: detecting an intensity distribution of a laser light formed as a line beam by a line beam optical system; dividing width in short axis direction of the line beam in the detected intensity distribution by number of times of the irradiation per one site and partitioning the width; and calculating increment of crystal grain size of a non-crystalline thin film for energy density corresponding to wave height of the partitioned intensity distribution, and summing the increments by number of times of pulse irradiation, when energy density of the laser light is larger than a threshold, the crystal grain size of the non-crystalline thin film taking a downward turn at the threshold, the increment summed before the energy density exceeds the threshold being set to zero.

Abstract translation: 根据一个实施例，激光退火方法包括：通过线束光学系统检测形成为线束的激光的强度分布; 将检测出的强度分布中的线束的短轴方向的宽度分割为每个部位的照射次数，并分割宽度; 以及计算对应于分割强度分布的波高的能量密度的非晶体薄膜的晶粒尺寸的增量，并且当激光的能量密度大于 阈值时，非晶体薄膜的晶体尺寸在阈值处呈向下转动，在能量密度超过阈值之前相加的增量被设置为零。