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公开(公告)号：US10447012B2
公开(公告)日：2019-10-15
申请号：US16189148
申请日：2018-11-13
发明人： Shinji Saito , Tomohiro Takase , Rei Hashimoto , Tsutomu Kakuno
摘要： A surface-emitting quantum cascade laser of an embodiment includes a semiconductor stacked body, an upper electrode, and a lower electrode. The semiconductor stacked body includes an active layer that includes a quantum well layer and emits infrared laser light, a first semiconductor layer that includes a photonic crystal layer in which pit parts constitute a rectangular grating, and a second semiconductor layer. The upper electrode is provided on the first semiconductor layer. The lower electrode is provided on a lower surface of a region of the second semiconductor layer overlapping at least the upper electrode. The photonic crystal layer is provided on the upper surface side of the first semiconductor layer. In plan view, the semiconductor stacked body includes a surface-emitting region including the photonic crystal layer and a current injection region. The upper electrode is provided on the current injection region.
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公开(公告)号：US20180076597A1
公开(公告)日：2018-03-15
申请号：US15685009
申请日：2017-08-24
发明人： Hiroyuki FUKUMIZU , Tsutomu Kakuno
CPC分类号： H01S5/3402 , H01S5/0287 , H01S5/06258 , H01S5/1014 , H01S5/1064 , H01S5/1215 , H01S5/1225 , H01S5/22 , H01S5/227 , H01S5/34366 , H01S2301/163
摘要： A quantum cascade laser device includes a substrate, a semiconductor stacked body and a first electrode. The semiconductor stacked body includes an active layer and a first clad layer. The active layer is configured to emit infrared laser light by an intersubband optical transition. A ridge waveguide is provided in the semiconductor stacked body. A distributed feedback region is provided along a first straight line. The ridge waveguide extends along the first straight line. The first electrode is provided at an upper surface of the distributed feedback region. A diffraction grating is arranged along the first straight line. The distributed feedback region includes a an increasing region where a length of the diffraction grating along a direction orthogonal to the first straight line increases from one end portion of the distributed feedback region toward another end portion of the distributed feedback region.
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公开(公告)号：US10290995B2
公开(公告)日：2019-05-14
申请号：US15693601
申请日：2017-09-01
发明人： Tsutomu Kakuno , Shinji Saito , Osamu Yamane
IPC分类号： H01S5/06 , H01S5/02 , H01S5/024 , H01S5/042 , H01S5/12 , H01S5/22 , H01S5/34 , H01S5/0625 , H01S5/10 , H01S5/343 , H01S5/028
摘要： A terahertz quantum cascade laser device includes a substrate, q semiconductor stacked body and a first electrode. The semiconductor stacked body includes an active layer and a first clad layer. The active layer is provided on the substrate and is configured to emit infrared laser light by an intersubband optical transition. The first clad layer is provided on the active layer. A ridge waveguide is provided in the semiconductor stacked body. A first distributed feedback region and a second distributed feedback region are provided at an upper surface of the first clad layer to be separated from each other along an extension direction of the ridge waveguide. The first electrode is provided at the upper surface of the first clad layer. A planar size of the first distributed feedback region is smaller than a planar size of the second distributed feedback region.
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4.发明授权Laser annealing method, laser annealing apparatus, and method for manufacturing thin film transistor 有权激光退火方法，激光退火装置以及薄膜晶体管的制造方法公开(公告)号：US09099386B2
公开(公告)日：2015-08-04
申请号：US13785400
申请日：2013-03-05
发明人： Tsutomu Kakuno , Ryuichi Togawa , Hiroshi Ito
IPC分类号： H01L21/20 , H01L21/263 , B23K26/00 , B23K26/073 , B23K26/08 , C30B1/02 , C30B28/08 , C30B29/06 , C30B35/00 , H01L21/268
CPC分类号： H01L21/2636 , B23K26/0738 , B23K26/083 , B23K26/352 , C30B1/02 , C30B1/023 , C30B28/08 , C30B29/06 , C30B35/00 , H01L21/268
摘要： According to one embodiment, a laser annealing method includes: detecting an intensity distribution of a laser light formed as a line beam by a line beam optical system; dividing width in short axis direction of the line beam in the detected intensity distribution by number of times of the irradiation per one site and partitioning the width; and calculating increment of crystal grain size of a non-crystalline thin film for energy density corresponding to wave height of the partitioned intensity distribution, and summing the increments by number of times of pulse irradiation, when energy density of the laser light is larger than a threshold, the crystal grain size of the non-crystalline thin film taking a downward turn at the threshold, the increment summed before the energy density exceeds the threshold being set to zero.
摘要翻译： 根据一个实施例，激光退火方法包括：通过线束光学系统检测形成为线束的激光的强度分布; 将检测出的强度分布中的线束的短轴方向的宽度分割为每个部位的照射次数，并分割宽度; 以及计算对应于分割强度分布的波高的能量密度的非晶体薄膜的晶粒尺寸的增量，并且当激光的能量密度大于 阈值时，非晶体薄膜的晶体尺寸在阈值处呈向下转动，在能量密度超过阈值之前相加的增量被设置为零。
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公开(公告)号：US11955775B2
公开(公告)日：2024-04-09
申请号：US16898535
申请日：2020-06-11
发明人： Shinji Saito , Kei Kaneko , Rei Hashimoto , Tsutomu Kakuno
CPC分类号： H01S5/3402 , H01S5/3407 , H01S5/34313 , H01S5/34366 , H01S2304/02
摘要： A quantum cascade laser includes light-emitting quantum well layers configured to emit infrared laser light by an intersubband transition; and injection quantum well layers configured to relax carrier energy. The light-emitting quantum well layers and the injection quantum well layers are stacked alternately. The injection quantum well layers relax the energy of carriers injected from the light-emitting quantum well layers, respectively. The light-emitting quantum well layers and the injection quantum well layers including barrier layers. At least one barrier layer includes first and second regions of a first ternary compound semiconductor, and a binary compound semiconductor thin film. The binary compound semiconductor thin film is provided between the first and second regions. The first ternary compound semiconductor includes Group III atoms and a Group V atom. The binary compound semiconductor thin film includes one Group III atom of the first ternary compound semiconductor and the Group V atom.
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公开(公告)号：US11881674B2
公开(公告)日：2024-01-23
申请号：US17652778
申请日：2022-02-28
发明人： Kei Kaneko , Tsutomu Kakuno , Rei Hashimoto , Shinji Saito
CPC分类号： H01S5/11 , H01S5/04253 , H01S5/04256 , H01S5/18319 , H01S5/18347 , H01S5/3013 , H01S5/3419 , H01S5/3401
摘要： A surface-emitting semiconductor light-emitting device includes a first semiconductor layers, an active layer on the first semiconductor layer, a photonic crystal layer on the active layer and a second semiconductor layer on the photonic crystal layer. The photonic crystal layer include first protrusions in a first region and second protrusions in a second region. A spacing of adjacent first protrusions is greater than a spacing of adjacent second protrusions. The second semiconductor layer includes a first layer and a second layer on the first layer. The first layer covers first and second protrusions so that a first space remains between the adjacent first protrusions. The first layer includes a first portion provided between the adjacent second protrusions. The second layer includes a second portion provided between the adjacent first protrusions. The first space between the adjacent first protrusions is filled with the second portion of the second layer.
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公开(公告)号：US10714897B2
公开(公告)日：2020-07-14
申请号：US16084898
申请日：2016-09-01
发明人： Shinji Saito , Tsutomu Kakuno , Osamu Yamane , Akira Tsumura
摘要： A distributed feedback semiconductor laser of includes a semiconductor stacked body and a first electrode. The semiconductor stacked body includes a first layer, an active layer that is provided on the first layer and is configured to emit laser light by an intersubband optical transition, and a second layer that is provided on the active layer. The semiconductor stacked body has a first surface including a flat portion and a trench portion; the flat portion includes a front surface of the second layer; the trench portion reaches the first layer from the front surface; the flat portion includes a first region and a second region; the first region extends along a first straight line; the second region extends to be orthogonal to the first straight line; and the trench portion and the second region outside the first region form a diffraction grating having a prescribed pitch along the first straight line. The first electrode is provided in the first region.
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公开(公告)号：US11435282B2
公开(公告)日：2022-09-06
申请号：US17245703
申请日：2021-04-30
发明人： Shinji Saito , Tsutomu Kakuno , Rei Hashimoto , Kei Kaneko
摘要： According to one embodiment, a gas analysis device includes: a base including a concave portion; a window includes a first film and a second film; an optical part that is located at a side of the window opposite to the base side and includes a light projector and a light receiver; and an optical path length controller that is located between the base and the window and has a controllable thickness. The concave portion includes a first sidewall that is oblique to a surface of the base, and a second sidewall that is oblique to the surface of the base. An oblique direction of the second sidewall is opposite to an oblique direction of the first sidewall. The light projector is configured to irradiate light toward the first sidewall. The light receiver is configured to convert light reflected by the second sidewall.
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公开(公告)号：US11205887B2
公开(公告)日：2021-12-21
申请号：US16701217
申请日：2019-12-03
发明人： Rei Hashimoto , Shinji Saito , Tomohiro Takase , Tsutomu Kakuno , Yuichiro Yamamoto , Kei Kaneko
摘要： A quantum cascade laser of an embodiment includes a semiconductor stacked body in which a ridge waveguide is provided. The semiconductor stacked body includes an active layer including a quantum well region including a layer including Al; and the active layer emits laser light. The layer that includes Al includes first regions, and a second region interposed between the first regions; the first region includes Al oxide and reaches a prescribed depth inward from an outer edge of the active layer along a direction parallel to a surface of the active layer in a cross section orthogonal to the optical axis; and the second region does not include Al oxide.
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公开(公告)号：US20200176953A1
公开(公告)日：2020-06-04
申请号：US16701217
申请日：2019-12-03
发明人： Rei Hashimoto , Shinji Saito , Tomohiro Takase , Tsutomu Kakuno , Yuichiro Yamamoto , Kei Kaneko
摘要： A quantum cascade laser of an embodiment includes a semiconductor stacked body in which a ridge waveguide is provided. The semiconductor stacked body includes an active layer including a quantum well region including a layer including Al; and the active layer emits laser light. The layer that includes Al includes first regions, and a second region interposed between the first regions; the first region includes Al oxide and reaches a prescribed depth inward from an outer edge of the active layer along a direction parallel to a surface of the active layer in a cross section orthogonal to the optical axis; and the second region does not include Al oxide.
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