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公开(公告)号：US20150084059A1
公开(公告)日：2015-03-26
申请号：US14452877
申请日：2014-08-06
发明人： Miki YUMOTO , Masahiko Kuraguchi
IPC分类号： H01L27/06 , H01L21/02 , H01L29/872 , H01L29/20 , H01L29/66
CPC分类号： H01L29/7806 , H01L21/0254 , H01L21/8252 , H01L27/0605 , H01L27/0629 , H01L29/1095 , H01L29/2003 , H01L29/66143 , H01L29/66522 , H01L29/66734 , H01L29/7813 , H01L29/872
摘要： A semiconductor device according to an embodiment includes a first GaN based semiconductor layer of a first conductive type, a second GaN based semiconductor layer of the first conductive type provided above the first GaN based semiconductor layer, a third GaN based semiconductor layer of a second conductive type provided above a part of the second GaN based semiconductor layer, a epitaxially grown fourth GaN based semiconductor layer of the first conductive type provided above the third GaN based semiconductor layer, a gate insulating film provided on the second, third, and fourth GaN based semiconductor layer, a gate electrode provided on the gate insulating film, a first electrode provided on the fourth GaN based semiconductor layer, a second electrode provided at the side of the first GaN based semiconductor layer opposite to the second GaN based semiconductor layer, and a third electrode provided on the second GaN based semiconductor layer.
摘要翻译： 根据实施例的半导体器件包括第一导电类型的第一GaN基半导体层，设置在第一GaN基半导体层上方的第一导电类型的第二GaN基半导体层，第二导电类型的第三GaN基半导体层 提供在第二GaN基半导体层的一部分上方的类型，设置在第三GaN基半导体层上方的第一导电类型的外延生长的第四GaN基半导体层，设置在第二，第三和第四GaN基 半导体层，设置在栅极绝缘膜上的栅电极，设置在第四GaN基半导体层上的第一电极，设置在与第二GaN基半导体层相对的第一GaN基半导体层侧的第二电极，以及 设置在第二GaN基半导体层上的第三电极。
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公开(公告)号：US20160079410A1
公开(公告)日：2016-03-17
申请号：US14637115
申请日：2015-03-03
发明人： Takaaki YASUMOTO , Naoko YANASE , Kazuhide ABE , Takeshi UCHIHARA , Yasunobu SAITO , Hidetoshi FUJIMOTO , Masaru FURUKAWA , Yasunari YAGI , Miki YUMOTO , Atsuko IIDA , Yukako MURAKAMI
IPC分类号： H01L29/778 , H01L29/06 , H01L29/423 , H01L29/205 , H01L29/417 , H01L29/20 , H01L29/04
CPC分类号： H01L29/7788 , H01L29/04 , H01L29/045 , H01L29/0692 , H01L29/0696 , H01L29/2003 , H01L29/41741 , H01L29/41766 , H01L29/4236 , H01L29/7789 , H01L29/7813
摘要： A semiconductor device includes a first electrode, a second electrode, a third electrode, and a nitride semiconductor layer. The first electrode has a first surface. The second electrode has a second surface. The second surface is provided with a plurality of convex portions and concave portions. The second electrode is spaced from the first electrode in a first direction. The third electrode is spaced from the first electrode in a second direction intersecting the first direction. The nitride semiconductor layer is provided between the first surface and the second surface, and between the third electrode and the second surface.
摘要翻译： 半导体器件包括第一电极，第二电极，第三电极和氮化物半导体层。 第一电极具有第一表面。 第二电极具有第二表面。 第二表面设置有多个凸部和凹部。 第二电极在第一方向与第一电极间隔开。 第三电极在与第一方向交叉的第二方向上与第一电极间隔开。 氮化物半导体层设置在第一表面和第二表面之间以及第三电极和第二表面之间。
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公开(公告)号：US20150263700A1
公开(公告)日：2015-09-17
申请号：US14475524
申请日：2014-09-02
发明人： Takaaki YASUMOTO , Naoko YANASE , Kazuhide ABE , Takeshi UCHIHARA , Yasunobu SAITO , Toshiyuki NAKA , Akira YOSHIOKA , Tasuku ONO , Tetsuya OHNO , Hidetoshi FUJIMOTO , Shingo MASUKO , Masaru FURUKAWA , Yasunari YAGI , Miki YUMOTO , Atsuko IIDA , Yukako MURAKAMI , Yoshikazu SUZUKI
IPC分类号： H03H9/64 , H01L29/205 , H01L49/02 , H01L29/778 , H01L29/78 , H01L29/20 , H01L27/07
CPC分类号： H01L28/20 , H01L27/0605 , H01L27/0617 , H01L27/0629 , H01L27/092 , H01L27/20 , H01L29/2003 , H01L29/205 , H01L29/66522 , H01L29/7786 , H01L29/78 , H03H9/02566
摘要： According to one embodiment, a semiconductor device includes a GaN-based semiconductor layer, a resonator that uses a first portion of the GaN-based semiconductor layer as a piezoelectric layer to resonate, and a transistor that uses a second portion of the GaN-based semiconductor layer as a channel layer.
摘要翻译： 根据一个实施例，半导体器件包括GaN基半导体层，使用GaN基半导体层的第一部分作为压电层谐振的谐振器，以及使用GaN基半导体层的第二部分的晶体管 半导体层作为沟道层。
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公开(公告)号：US20160225857A1
公开(公告)日：2016-08-04
申请号：US14971118
申请日：2015-12-16
发明人： Hisashi SAITO , Miki YUMOTO
CPC分类号： H01L29/2003 , H01L21/0228 , H01L29/205 , H01L29/4236 , H01L29/4966 , H01L29/513 , H01L29/66462 , H01L29/778 , H01L29/7786 , H01L29/7787 , H01L29/7813
摘要： A semiconductor device according an embodiment includes a GaN layer, a GaN-based semiconductor layer provided on the GaN layer and having a wider band gap than the GaN layer, a source electrode electrically connected to the GaN-based semiconductor layer, a drain electrode electrically connected to the GaN-based semiconductor layer, a gate electrode provided in the GaN-based semiconductor layer between the source electrode and the drain electrode, and a gate insulating film provided at least between the GaN layer and the gate electrode, the gate insulating film including a first insulating film and a second insulating film, the first insulating film provided on the GaN layer, the first insulating film having a thickness equal to or greater than 0.2 nm and less than 2 nm, the first insulating film including nitrogen, the second insulating film provided between the first insulating film and the gate electrode, the second insulating film including oxygen.
摘要翻译： 根据实施例的半导体器件包括GaN层，设置在GaN层上并具有比GaN层更宽的带隙的GaN基半导体层，与GaN基半导体层电连接的源电极，电连接到GaN基半导体层的漏电极 连接到GaN基半导体层，设置在源电极和漏极之间的GaN基半导体层中的栅电极和至少设置在GaN层和栅电极之间的栅极绝缘膜，栅极绝缘膜 包括第一绝缘膜和第二绝缘膜，所述第一绝缘膜设置在所述GaN层上，所述第一绝缘膜的厚度等于或大于0.2nm且小于2nm，所述第一绝缘膜包括氮，所述第二绝缘膜包括氮， 设置在第一绝缘膜和栅电极之间的绝缘膜，第二绝缘膜包括氧。
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公开(公告)号：US20150263152A1
公开(公告)日：2015-09-17
申请号：US14472956
申请日：2014-08-29
发明人： Takaaki YASUMOTO , Naoko YANASE , Kazuhide ABE , Takeshi UCHIHARA , Yasunobu SAITO , Toshiyuki NAKA , Akira YOSHIOKA , Tasuku ONO , Tetsuya OHNO , Hidetoshi FUJIMOTO , Shingo MASUKO , Masaru FURUKAWA , Yasunari YAGI , Miki YUMOTO , Atsuko IIDA , Yukako MURAKAMI , Takako MOTAI
IPC分类号： H01L29/778 , H01L29/20
CPC分类号： H01L29/408 , H01L29/2003 , H01L29/423 , H01L29/7786
摘要： A semiconductor device includes a GaN-based semiconductor layer, a source electrode on the GaN-based semiconductor layer, a drain electrode on the GaN-based semiconductor layer, and a gate electrode formed on the GaN-based semiconductor layer between the source electrode and the drain electrode. A first layer is in contact with the GaN-based semiconductor layer between the gate electrode and the drain electrode.
摘要翻译： 半导体器件包括GaN基半导体层，GaN基半导体层上的源电极，GaN基半导体层上的漏电极和形成在源极电极和源极之间的GaN基半导体层上的栅电极 漏电极。 第一层与栅电极和漏电极之间的GaN基半导体层接触。
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公开(公告)号：US20160225886A1
公开(公告)日：2016-08-04
申请号：US14993133
申请日：2016-01-12
发明人： Hisashi SAITO , Miki YUMOTO
IPC分类号： H01L29/778 , H01L29/51 , H01L29/20 , H01L29/66
摘要： A semiconductor device according to an embodiment includes a first GaN-based semiconductor layer, a second GaN-based semiconductor layer provided on the first GaN-based semiconductor layer and having a wider band gap than the first GaN-based semiconductor layer, a source electrode electrically connected to the second GaN-based semiconductor layer, a drain electrode electrically connected to the second GaN-based semiconductor layer, a gate electrode provided between the source electrode and the drain electrode, and a passivation film provided on the second GaN-based semiconductor layer between the source electrode and the gate electrode and between the gate electrode and the drain electrode, the passivation film including a first insulating film and a second insulating film, the first insulating film including nitrogen, the first insulating film having a thickness equal to or greater than 0.2 nm and less than 2 nm, the second insulating film including oxygen and provided on the first insulating film.
摘要翻译： 根据实施例的半导体器件包括第一GaN基半导体层，设置在第一GaN基半导体层上并且具有比第一GaN基半导体层更宽的带隙的第二GaN基半导体层，源电极 电连接到第二GaN基半导体层，电连接到第二GaN基半导体层的漏电极，设置在源电极和漏电极之间的栅极，以及设置在第二GaN基半导体上的钝化膜 所述钝化膜包括第一绝缘膜和第二绝缘膜，所述第一绝缘膜包括氮，所述第一绝缘膜的厚度等于或等于或小于所述栅极电极和所述漏电极之间的厚度， 大于0.2nm且小于2nm，所述第二绝缘膜包括氧并且设置在第一绝缘膜上 制作电影。
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公开(公告)号：US20150126024A1
公开(公告)日：2015-05-07
申请号：US14597834
申请日：2015-01-15
发明人： Miki YUMOTO
IPC分类号： H01L29/20 , H01L29/423 , H01L21/02 , H01L29/06
CPC分类号： H01L29/2003 , H01L21/0217 , H01L29/0603 , H01L29/42364 , H01L29/66462 , H01L29/7787 , H01L29/78
摘要： A semiconductor device of an embodiment includes a semiconductor layer formed of a III-V group nitride semiconductor, a first silicon nitride film formed on the semiconductor layer, a gate electrode formed on the first silicon nitride film, a source electrode and a drain electrode formed on the semiconductor layer such that the gate electrode is interposed between the source electrode and the drain electrode, and a second silicon nitride film formed between the source electrode and the gate electrode and between the drain electrode and the gate electrode and having an oxygen atom density lower than that of the first silicon nitride film.
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公开(公告)号：US20170148908A1
公开(公告)日：2017-05-25
申请号：US15424422
申请日：2017-02-03
发明人： Miki YUMOTO , Masahiko KURAGUCHI
IPC分类号： H01L29/78 , H01L29/66 , H01L29/872 , H01L29/20 , H01L29/10
CPC分类号： H01L29/7806 , H01L21/0254 , H01L21/8252 , H01L27/0605 , H01L27/0629 , H01L29/1095 , H01L29/2003 , H01L29/66143 , H01L29/66522 , H01L29/66734 , H01L29/7813 , H01L29/872
摘要： A semiconductor device according to an embodiment includes a first GaN based semiconductor layer of a first conductive type, a second GaN based semiconductor layer of the first conductive type provided above the first GaN based semiconductor layer, a third GaN based semiconductor layer of a second conductive type provided above a part of the second GaN based semiconductor layer, a epitaxially grown fourth GaN based semiconductor layer of the first conductive type provided above the third GaN based semiconductor layer, a gate insulating film provided on the second, third, and fourth GaN based semiconductor layer, a gate electrode provided on the gate insulating film, a first electrode provided on the fourth GaN based semiconductor layer, a second electrode provided at the side of the first GaN based semiconductor layer opposite to the second GaN based semiconductor layer, and a third electrode provided on the second GaN based semiconductor layer.
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公开(公告)号：US20160284831A1
公开(公告)日：2016-09-29
申请号：US15056013
申请日：2016-02-29
发明人： Aya SHINDOME , Masahiko KURAGUCHI , Hisashi SAITO , Shigeto FUKATSU , Miki YUMOTO , Yosuke KAJIWARA
IPC分类号： H01L29/778 , H01L29/205 , H01L29/423 , H01L21/265 , H01L21/266 , H01L21/76 , H01L29/66 , H01L29/20 , H01L29/06
CPC分类号： H01L21/2654 , H01L21/7605 , H01L29/2003 , H01L29/41758 , H01L29/4236 , H01L29/7786
摘要： A semiconductor device of an embodiment includes a first GaN-based semiconductor layer, a second GaN-based semiconductor layer provided on the first GaN-based semiconductor layer and having a larger bandgap than the first GaN-based semiconductor layer, a source electrode provided on the second GaN-based semiconductor layer, a drain electrode provided on the second GaN-based semiconductor layer, a recess provided between the source electrode and the drain electrode in the second GaN-based semiconductor layer, a gate insulating film provided on a surface of the recess, and a gate electrode provided on the gate insulating film and having an end portion in a gate width direction, located in the recess.
摘要翻译： 实施例的半导体器件包括第一GaN基半导体层，设置在第一GaN基半导体层上并具有比第一GaN基半导体层更大的带隙的第二GaN基半导体层，设置在第一GaN基半导体层上的源电极 第二GaN基半导体层，设置在第二GaN基半导体层上的漏电极，设置在第二GaN基半导体层中的源极和漏电极之间的凹部，设置在第二GaN基半导体层的表面上的栅极绝缘膜 所述凹部和设置在所述栅极绝缘膜上并且具有位于所述凹部中的栅极宽度方向上的端部的栅电极。
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公开(公告)号：US20150123143A1
公开(公告)日：2015-05-07
申请号：US14596332
申请日：2015-01-14
发明人： Miki YUMOTO
CPC分类号： H01L29/2003 , H01L21/0217 , H01L29/0603 , H01L29/42364 , H01L29/66462 , H01L29/7787 , H01L29/78
摘要： A semiconductor device of an embodiment includes a semiconductor layer formed of a III-V group nitride semiconductor, a first silicon nitride film formed on the semiconductor layer, a gate electrode formed on the first silicon nitride film, a source electrode and a drain electrode formed on the semiconductor layer such that the gate electrode is interposed between the source electrode and the drain electrode, and a second silicon nitride film formed between the source electrode and the gate electrode and between the drain electrode and the gate electrode and having an oxygen atom density lower than that of the first silicon nitride film.
摘要翻译： 实施例的半导体器件包括由III-V族氮化物半导体形成的半导体层，形成在半导体层上的第一氮化硅膜，形成在第一氮化硅膜上的栅电极，形成的源电极和漏电极 在所述半导体层上，使得所述栅电极插入在所述源电极和所述漏极之间，以及形成在所述源电极和所述栅电极之间以及所述漏电极与所述栅电极之间并具有氧原子密度的第二氮化硅膜 低于第一氮化硅膜的厚度。
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