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    Semiconductor device
    1.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US10181515B2

    公开(公告)日：2019-01-15

    申请号：US15436179

    申请日：2017-02-17

    申请人： Kabushiki Kaisha Toshiba

    发明人： Mariko Suzuki ,  Tadashi Sakai

    IPC分类号： H01L29/16 ,  H01L29/47 ,  H01L29/40 ,  H01L29/872 ,  H01L29/36 ,  H01L23/29 ,  H01L23/31 ,  H01L29/66 ,  H01L29/732 ,  H01L29/861 ,  H01L29/868 ,  H01L29/06

    摘要： Provided is a semiconductor device according to an embodiment including an i-type or first-conductivity-type first diamond semiconductor layer having a first side surface, a second-conductivity-type second diamond semiconductor layer provided on the first diamond semiconductor layer and having a second side surface, a third diamond semiconductor layer being in contact with the first side surface and the second side surface, the third diamond semiconductor containing nitrogen, a first electrode electrically connected to the first diamond semiconductor layer, and a second electrode electrically connected to the second diamond semiconductor layer.

    Graphene wiring and semiconductor device
    5.
    发明授权
    Graphene wiring and semiconductor device 有权
    石墨烯布线和半导体器件

    公开(公告)号：US09184133B2

    公开(公告)日：2015-11-10

    申请号：US14658442

    申请日：2015-03-16

    申请人： Kabushiki Kaisha Toshiba

    发明人： Masayuki Katagiri ,  Tadashi Sakai

    IPC分类号： H01L23/532

    CPC分类号： H01L23/53276 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A graphene wiring of an embodiment includes graphene, first conductive layers, second conductive layers, and a third conductive layer. The first conductive layers are connected to first sides of the graphene opposite to each other in a longitudinal direction of the wiring. The second conductive layers are connected to second sides of the graphene opposite to each other in a widthwise direction of the wiring. The third conductive layer is connected to a top surface of the graphene. The first and second conductive layers are connected to each other.

    摘要翻译： 实施例的石墨烯布线包括石墨烯，第一导电层，第二导电层和第三导电层。 第一导电层在布线的纵向方向上连接到彼此相对的石墨烯的第一侧。 第二导电层在布线的宽度方向上彼此相对的石墨烯的第二侧连接。 第三导电层连接到石墨烯的顶表面。 第一和第二导电层彼此连接。

    Interconnection of semiconductor device with graphene wire
    7.
    发明授权
    Interconnection of semiconductor device with graphene wire 有权
    半导体器件与石墨烯线的互连

    公开(公告)号：US09117738B2

    公开(公告)日：2015-08-25

    申请号：US13966164

    申请日：2013-08-13

    申请人： KABUSHIKI KAISHA TOSHIBA

    发明人： Makoto Wada ,  Hisao Miyazaki ,  Akihiro Kajita ,  Atsunobu Isobayashi ,  Tatsuro Saito ,  Tadashi Sakai

    IPC分类号： H01L29/16 ,  H01L21/768 ,  H01L21/3215 ,  H01L23/532 ,  H01L27/105

    CPC分类号： H01L29/1606 ,  H01L21/3215 ,  H01L21/76805 ,  H01L21/76876 ,  H01L21/76885 ,  H01L21/76886 ,  H01L23/53276 ,  H01L27/1052 ,  H01L2924/0002 ,  H01L2924/00

    摘要： According to one embodiment, a semiconductor device using multi-layered graphene wires includes a substrate having semiconductor elements formed therein, a first graphene wire formed above the substrate and including a multi-layered graphene layer having a preset impurity doped therein, a second graphene wire formed on the same layer as the first multi-layered graphene wire above the substrate and including a multi-layered graphene layer into which the preset impurity is not doped, a lower-layer contact connected to the undersurface side of the first multi-layered graphene wire, and an upper-layer contact connected to the upper surface side of the second multi-layered graphene wire.

    摘要翻译： 根据一个实施例，使用多层石墨烯线的半导体器件包括其中形成有半导体元件的衬底，在衬底上形成的第一个石墨烯线，并且包括掺杂有预置杂质的多层石墨烯层，第二石墨烯线 形成在与衬底上方的第一多层石墨烯线相同的层上，并且包括未掺杂预置杂质的多层石墨烯层，连接到第一多层石墨烯的下表面侧的下层接触 电线，以及连接到第二多层石墨烯线的上表面侧的上层接触。