公开(公告)号：US12062651B2

公开(公告)日：2024-08-13

申请号：US17468252

申请日：2021-09-07

申请人： Kabushiki Kaisha Toshiba ,  Toshiba Electronic Devices & Storage Corporation

发明人： Yasuhiro Isobe ,  Hung Hung ,  Akira Yoshioka ,  Toru Sugiyama ,  Hitoshi Kobayashi ,  Tetsuya Ohno ,  Masaaki Iwai ,  Naonori Hosokawa ,  Masaaki Onomura

IPC分类号： H01L25/18 ,  H01L25/07 ,  H01L25/16 ,  H01L29/778 ,  H03K17/687 ,  H01L23/00

CPC分类号： H01L25/18 ,  H01L25/074 ,  H01L25/16 ,  H01L29/778 ,  H03K17/6871 ,  H01L24/32 ,  H01L24/33 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L2224/32145 ,  H01L2224/33181 ,  H01L2224/48227 ,  H01L2224/49111 ,  H01L2224/73265 ,  H01L2924/10253 ,  H01L2924/1033 ,  H01L2924/10344 ,  H01L2924/13064 ,  H01L2924/13091

摘要： A semiconductor device according to an embodiment includes: a first nitride semiconductor layer having a first surface and a second surface; a first source electrode provided on the first surface; a first drain electrode provided on the first surface; a first gate electrode provided on the first surface between the first source electrode and the first drain electrode; a second nitride semiconductor layer having a third surface and a fourth surface, the third surface being provided on the second surface and facing the second surface, and the second nitride semiconductor layer having a smaller band gap than the first nitride semiconductor layer; and a first semiconductor device having a fifth surface provided on the fourth surface and facing the fourth surface with a size equal to or smaller than a size of the fourth surface, the first semiconductor device including a first semiconductor material having a smaller band gap than the second nitride semiconductor layer.

公开(公告)号：US11984387B2

公开(公告)日：2024-05-14

申请号：US17653397

申请日：2022-03-03

申请人： KABUSHIKI KAISHA TOSHIBA ,  TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION

发明人： Toru Sugiyama ,  Akira Yoshioka ,  Yasuhiro Isobe

IPC分类号： H01L23/495 ,  H01L23/00 ,  H01L25/065 ,  H01L25/07 ,  H01L29/66 ,  H01L29/778

CPC分类号： H01L23/49575 ,  H01L23/4952 ,  H01L23/49562 ,  H01L23/49568 ,  H01L24/14 ,  H01L24/17 ,  H01L25/0657 ,  H01L25/074 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/778 ,  H01L2924/1033 ,  H01L2924/13064 ,  H01L2924/13091

摘要： A first chip includes a first surface, a second surface, a first semiconductor layer including a nitride semiconductor layer, a first electrode pad located at the first surface, a second electrode pad located at the first surface, a first gate pad located at the first surface, and a third electrode pad located at the first surface. A second chip is located on the first surface of the first chip. The second chip includes a third surface facing the first surface of the first chip, a fourth surface, a second semiconductor layer including a channel of a second conductivity type, a fourth electrode pad located at the fourth surface, a fifth electrode pad located at the third surface and bonded to the second electrode pad of the first chip, and a second gate pad located at the third surface and bonded to the third electrode pad of the first chip.

公开(公告)号：US11948864B2

公开(公告)日：2024-04-02

申请号：US17465565

申请日：2021-09-02

申请人： KABUSHIKI KAISHA TOSHIBA ,  TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION

发明人： Akira Yoshioka ,  Hung Hung ,  Yasuhiro Isobe ,  Toru Sugiyama ,  Hitoshi Kobayashi

IPC分类号： H01L23/482 ,  H01L29/20 ,  H01L29/205 ,  H01L29/778

CPC分类号： H01L23/4824 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/7786

摘要： A semiconductor device has a first wiring extending in a first direction on a nitride semiconductor layer. A source electrode is electrically connected to the first wiring and extends in a second direction. A drain electrode extends in the second direction and includes a first and second portion extending in the second direction, spaced from each other in the first direction. An element isolation region is in the second nitride semiconductor layer between the first and second portions. A third portion extends in the second direction on the first and second portions. A gate electrode extends in the second direction on the second nitride semiconductor layer between the source electrode and the drain electrode. The portion includes holes therein aligned with each other along the second direction with the spacing between adjacent holes in the second direction increasing with increasing distance in the second direction from the first wiring.

公开(公告)号：US11830916B2

公开(公告)日：2023-11-28

申请号：US17190070

申请日：2021-03-02

申请人： KABUSHIKI KAISHA TOSHIBA ,  TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION

发明人： Akira Yoshioka ,  Yasuhiro Isobe ,  Hung Hung ,  Hitoshi Kobayashi ,  Tetsuya Ohno ,  Toru Sugiyama

IPC分类号： H01L29/778 ,  H01L29/20 ,  H01L29/06 ,  H01L29/417

CPC分类号： H01L29/2003 ,  H01L29/0653 ,  H01L29/41775 ,  H01L29/7786

摘要： A semiconductor device includes first and second nitride semiconductor layers. The second layer on the first nitride has a first region, a second region, and a third region between the first and second regions. A first gate electrode is in the first region and extends parallel to a surface of a substrate. A first source electrode is in the first region and extends in the first direction. A second gate electrode in the second region and extends in the first direction. A second source electrode is in the second region and extends in the first direction. A drain electrode coupled to a first and a second wiring. The first wiring directly contacts the second nitride semiconductor layer in the first region. The second wiring directly contacts the second nitride semiconductor layer in the second region. An insulation material is in the third region.

公开(公告)号：US20230080613A1

公开(公告)日：2023-03-16

申请号：US17653201

申请日：2022-03-02

申请人： KABUSHIKI KAISHA TOSHIBA ,  TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION

发明人： Toru Sugiyama ,  Akira Yoshioka ,  Hung Hung ,  Yasuhiro Isobe ,  Hitoshi Kobayashi

IPC分类号： H01L23/495 ,  H01L23/00 ,  H01L29/20 ,  H01L29/778 ,  H01L25/07

摘要： A semiconductor device includes a first terminal, a second terminal, a first chip, and a resistance part. The first chip includes a substrate electrically connected to the second terminal, a nitride semiconductor layer located on the substrate, a first drain electrode located on the nitride semiconductor layer and electrically connected to the first terminal, a first source electrode located on the nitride semiconductor layer and electrically connected to the second terminal, and a substrate capacitance between the first drain electrode and the substrate. The resistance part is connected in series in a path including the substrate capacitance between the first drain electrode and the second terminal.

公开(公告)号：US20220084916A1

公开(公告)日：2022-03-17

申请号：US17197107

申请日：2021-03-10

申请人： Kabushiki Kaisha Toshiba ,  Toshiba Electronic Devices & Storage Corporation

发明人： Toru Sugiyama ,  Akira Yoshioka ,  Hung Hung ,  Yasuhiro Isobe ,  Hitoshi Kobayashi ,  Tetsuya Ohno ,  Naonori Hosokawa ,  Masaaki Onomura ,  Masaaki Iwai

IPC分类号： H01L23/495 ,  H01L29/778 ,  H01L29/866 ,  H01L49/02

摘要： A semiconductor device includes a semiconductor package including an n-type channel normally-off transistor including a first electrode, a second electrode, and a first control electrode, a normally-on transistor including a third electrode electrically connected to the second electrode, a fourth electrode, and a second control electrode, a first diode including a first anode electrically connected to the second control electrode and a first cathode electrically connected to the third electrode, and a Zener diode including a second anode electrically connected to the first electrode and a second cathode electrically connected to the second electrode; a first terminal provided on the semiconductor package, the first terminal being electrically connected to the first electrode; a plurality of second terminals provided on the semiconductor package, the second terminals being electrically connected to the first electrode, and the second terminals being lined up in a first direction; a third terminal provided on the semiconductor package, the third terminal being electrically connected to the fourth electrode; a plurality of fourth terminals provided on the semiconductor package, the fourth terminals being electrically connected to the first control electrode; and a plurality of fifth terminals provided on the semiconductor package, the fifth terminals being electrically connected to the second control electrode, and the fifth terminals being lined up in the first direction.

公开(公告)号：US20210194475A1

公开(公告)日：2021-06-24

申请号：US17012386

申请日：2020-09-04

申请人： Kabushiki Kaisha Toshiba ,  Toshiba Electronic Devices & Storage Corporation

发明人： Hung Hung ,  Yasuhiro Isobe ,  Akira Yoshioka ,  Toru Sugiyama ,  Masaaki Iwai ,  Naonori Hosokawa ,  Masaaki Onomura ,  Hitoshi Kobayashi ,  Tetsuya Ohno

IPC分类号： H03K17/041 ,  H03K17/0412 ,  H03K17/74

摘要： Provided is a semiconductor device including: a normally-off transistor having a first electrode, a second electrode, and a first control electrode; a normally-on transistor having a third electrode electrically connected to the second electrode, a fourth electrode, and a second control electrode; a first capacitor having a first end and a second end electrically connected to the second control electrode; a Zener diode having a first anode and a first cathode, the first anode being electrically connected to the second end and the second control electrode, and the first cathode being electrically connected to the third electrode; a first resistor having a third end and a fourth end electrically connected to the first control electrode; a first diode having a second anode and a second cathode, the second anode being electrically connected to the third end; a second resistor having a fifth end electrically connected to the second cathode and a sixth end electrically connected to the fourth end and the first control electrode; a second diode having a third anode and a third cathode, the third anode being electrically connected to the second end, the first anode, and the second control electrode, and the third cathode being electrically connected to the first electrode; and a second capacitor having a seventh end and an eighth end, the seventh end being electrically connected to the fourth end, the sixth end, and the first control electrode, and the eighth end being electrically connected to the first electrode.

公开(公告)号：US11264899B2

公开(公告)日：2022-03-01

申请号：US16745457

申请日：2020-01-17

申请人： Kabushiki Kaisha Toshiba ,  Toshiba Electronic Devices & Storage Corporation

发明人： Akira Yoshioka ,  Toru Sugiyama ,  Masaaki Iwai ,  Naonori Hosokawa ,  Masaaki Onomura ,  Hung Hung ,  Yasuhiro Isobe

IPC分类号： H03K17/081 ,  H02M3/158 ,  H02M3/337 ,  H03K17/74 ,  H03K17/10 ,  H03K17/687 ,  H02M1/00

摘要： A semiconductor device according to embodiments includes a normally-off transistor having a first electrode, a second electrode, and a first control electrode, a normally-on transistor having a third electrode electrically connected to the second electrode, a fourth electrode, and a second control electrode, a first element having a first end portion electrically connected to the first control electrode and a second end portion electrically connected to the first electrode, and the first element including a first capacitance component; and, a second element having a third end portion electrically connected to the first control electrode and the first end portion and a fourth end portion, and the second element including a second capacitance component, wherein, when a threshold voltage of the normally-off transistor is denoted by Vth, a maximum rated gate voltage of the normally-off transistor is denoted by Vg_max, a voltage of the fourth end portion is denoted by Vg_on, the first capacitance component is denoted by Ca, and the second capacitance component is denoted by Cb, Vth

公开(公告)号：US10771057B1

公开(公告)日：2020-09-08

申请号：US16745456

申请日：2020-01-17

申请人： Kabushiki Kaisha Toshiba ,  Toshiba Electronic Devices & Storage Corporation

发明人： Akira Yoshioka ,  Toru Sugiyama ,  Masaaki Iwai ,  Naonori Hosokawa ,  Masaaki Onomura ,  Hung Hung ,  Yasuhiro Isobe

IPC分类号： H03K17/687 ,  H02M1/08 ,  H03K17/06 ,  H01L25/07 ,  H02P27/06

摘要： A semiconductor device of embodiments includes a first normally-off transistor having a first electrode, a second electrode, and a first control electrode, a normally-on transistor having a third electrode electrically connected to the second electrode via a first wiring, a fourth electrode, and a second control electrode, a second normally-off transistor having a fifth electrode, a sixth electrode electrically connected to the third electrode via a second wiring, and a third control electrode, a first diode having a first anode electrically connected to the second control electrode and a first cathode electrically connected to the third electrode, and a capacitor having a first end portion connected to the first anode and the second control electrode and a second end portion.

公开(公告)号：US12002858B2

公开(公告)日：2024-06-04

申请号：US17191554

申请日：2021-03-03

申请人： KABUSHIKI KAISHA TOSHIBA ,  TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION

发明人： Tetsuya Ohno ,  Akira Yoshioka ,  Toru Sugiyama ,  Hung Hung ,  Yasuhiro Isobe ,  Hitoshi Kobayashi

IPC分类号： H01L29/20 ,  H01L29/06 ,  H01L29/40 ,  H01L29/423 ,  H01L29/778

CPC分类号： H01L29/2003 ,  H01L29/0607 ,  H01L29/404 ,  H01L29/407 ,  H01L29/4236 ,  H01L29/7786

摘要： A semiconductor device has a first and a second nitride semiconductor layer and a first and a second electrode thereon. A gate electrode is between the first and second electrodes. A gate field plate is on the gate electrode. A first field plate is above a position between the gate field plate and the second electrode. A second field plate is between the first field plate and the gate field plate. A distance from the first nitride semiconductor layer to the second field plate is shorter than a distance from the first nitride semiconductor layer to the portion of the gate field plate that protrudes the most towards the second electrode. The distance from the first nitride semiconductor layer to the second field plate is shorter than a distance from the first nitride semiconductor layer to an end surface of the first field plate on a first electrode side.