Cleaning apparatus
    3.
    发明授权
    Cleaning apparatus 有权
    清洁装置

    公开(公告)号:US06247198B1

    公开(公告)日:2001-06-19

    申请号:US09661435

    申请日:2000-09-13

    IPC分类号: B08B312

    摘要: For cleaning a wafer by a cleaning apparatus, a cleaning liquid is contained in a cleaning bath. Leaving two brushes open, the wafer is inserted to the cleaning bath, placed on oscillation and rotation rollers and retained by the rollers. The brushes are closed and the wafer is held by the brushes. Next, the two brushes are rotated while the wafer is oscillated and rotated by the rollers and so on. Furthermore, ultrasonic vibrations are applied to the cleaning liquid in the cleaning bath by an ultrasonic generator. Scrub cleaning with the two brushes and ultrasonic cleaning by ultrasonic vibrations are thereby performed on the wafer.

    摘要翻译: 为了通过清洁装置清洁晶片,清洗液中含有清洗液。 使两个电刷打开,将晶片插入清洗槽中,放置在摆动和旋转辊上并由辊保持。 电刷被关闭,晶片被电刷保持。 接下来,两个电刷旋转,同时晶片由辊等摆动并旋转。 此外,超声波振动通过超声波发生器施加到清洗槽中的清洗液。 由此在晶片上进行用两个刷子进行的擦洗和超声波振动的超声波清洗。

    Cleaning method
    4.
    发明授权
    Cleaning method 有权
    清洗方法

    公开(公告)号:US06254688B1

    公开(公告)日:2001-07-03

    申请号:US09204547

    申请日:1998-12-03

    IPC分类号: B08B312

    摘要: For cleaning a wafer by a cleaning apparatus, a cleaning liquid is contained in a cleaning bath. Leaving two brushes open, the wafer is inserted to the cleaning bath, placed on oscillation and rotation rollers and retained by the rollers. The brushes are closed and the wafer is held by the brushes. Next, the two brushes are rotated while the wafer is oscillated and rotated by the rollers and so on. Furthermore, ultrasonic vibrations are applied to the cleaning liquid in the cleaning bath by an ultrasonic generator. Scrub cleaning with the two brushes and ultrasonic cleaning by ultrasonic vibrations are thereby performed on the wafer.

    摘要翻译: 为了通过清洁装置清洁晶片,清洗液中含有清洗液。 使两个电刷打开,将晶片插入清洗槽中,放置在摆动和旋转辊上并由辊保持。 电刷被关闭,晶片被电刷保持。 接下来,两个电刷旋转,同时晶片由辊等摆动并旋转。 此外,超声波振动通过超声波发生器施加到清洗槽中的清洗液。 由此在晶片上进行用两个刷子进行的擦洗和超声波振动的超声波清洗。

    Absorptive article
    5.
    发明授权
    Absorptive article 有权
    吸收品

    公开(公告)号:US08251966B2

    公开(公告)日:2012-08-28

    申请号:US12307109

    申请日:2007-07-05

    IPC分类号: A61F13/15 A61F13/20

    摘要: Provided is an absorptive article having absorption elements capable of following the body of a user. This absorptive article (1) comprises a generally rectangular base absorption element (2), a top absorption element (3) disposed on one surface of the base absorption element (2) at substantially lateral center of the base absorption element (2) and along the longitudinal direction of the base absorption element (2), and a fixing part (4) for fixing the base absorption element (2) to the top absorption element (3) so that at least one end of the top absorption element (3) in the longitudinal direction thereof is made to be a free end (31). A temporary locking part (5) for restricting the movement of the top absorption element (3) is provided on the top absorption element (3) near a free end part (32) thereof at least before application of the absorptive article to the body of the user.

    摘要翻译: 提供了具有能够跟随使用者身体的吸收元件的吸收性物品。 该吸收性物品(1)包括大致矩形的基底吸收元件(2),位于基底吸收元件(2)的基本吸收元件(2)的大致侧向中心的一个表面上的顶部吸收元件(3) 基底吸收元件(2)的纵向方向和用于将基底吸收元件(2)固定到顶部吸收元件(3)的固定部分(4),使得顶部吸收元件(3)的至少一个端部 在其长度方向上形成自由端(31)。 至少在将吸收性物品施加到身体的主体之前,用于限制顶部吸收元件(3)的运动的临时锁定部分(5)设置在顶部吸收元件(3)的自由端部(32)附近, 用户。

    ABSORBENT ARTICLE
    6.
    发明申请
    ABSORBENT ARTICLE 审中-公开
    吸收品

    公开(公告)号:US20120046630A1

    公开(公告)日:2012-02-23

    申请号:US13143678

    申请日:2010-01-07

    IPC分类号: A61F13/475

    CPC分类号: A61F13/4753 A61F13/5616

    摘要: An absorbent article includes a front wing unit which is provided outside in a widthwise direction of the absorbent article more than an absorber, and extends to the outside in the widthwise direction of the absorber in an inside leg region which corresponds to an inside leg portion of a wearer; and a gather which is provided at each of edges of the absorber, which extends along a longitudinal direction of the absorbent article, and which prevents a bodily fluid of the wearer from leaking from the absorbent article. The front wing unit has a base part which is positioned at an innermost side in a widthwise direction of the absorbent article in the front wing unit; and the leakage gather extends to the outside in the widthwise direction of the absorbent article more than the base part as seen in plan view of the absorbent article.

    摘要翻译: 吸收性物品包括前翼单元,该前翼单元在吸收性物品的宽度方向上设置在吸收体的宽度方向外侧,并且在吸收体的宽度方向上延伸到与腿部的内侧腿部对应的内侧腿部的外侧 穿戴者 以及设置在吸收体的沿着吸收性物品的长度方向延伸的各边缘的褶皱,并且防止穿用者的体液从吸收性物品泄漏。 前翼单元具有基部,其位于前翼单元中的吸收性物品的宽度方向的最内侧; 并且如在吸收性物品的平面图中看到的那样,泄漏聚集体在吸收性物品的宽度方向上比基部延伸到外侧。

    ABSORBENT ARTICLE
    7.
    发明申请
    ABSORBENT ARTICLE 审中-公开
    吸收品

    公开(公告)号:US20110125117A1

    公开(公告)日:2011-05-26

    申请号:US12865065

    申请日:2009-01-28

    申请人: Jun Kudo

    发明人: Jun Kudo

    IPC分类号: A61F13/47 A61F13/56 A61L15/62

    摘要: An absorbent article having a napkin body (2) comprising as the essentials a liquid-permeable top sheet (3), a liquid-impermeable back sheet (4), and a liquid-absorbing member (5) placed between the top sheet (3) and the back sheet (4), wherein a removable cover sheet (20A) having a length and a width which do not exceed respectively the length and width of the napkin body (2) is provided on the top sheet (3) side of the napkin body (2) in contact with the top sheet (3).

    摘要翻译: 一种具有卫生巾体(2)的吸收性物品,该卫生巾主体(2)包括透液性顶片(3),不透液性底片(4)和放置在顶片(3)之间的液体吸收构件 )和背片(4),其中,具有不超过卫生巾本体(2)的长度和宽度的长度和宽度的可移除覆盖片(20A)设置在卫生巾主体(2)的顶片(3)侧 卫生巾本体(2)与顶片(3)接触。

    Semiconductor storage device and method of producing same
    10.
    发明授权
    Semiconductor storage device and method of producing same 失效
    半导体存储装置及其制造方法

    公开(公告)号:US06538272B2

    公开(公告)日:2003-03-25

    申请号:US09534352

    申请日:2000-03-24

    IPC分类号: H01L2976

    摘要: A contact plug electrically connected with a MOS transistor is formed in a first interlayer dielectric. Then, a barrier metal material is deposited over the first interlayer dielectric and the contact plug, and patterned into a barrier metal electrically connected with the contact plug. After a SiN film is formed as an anti-oxygen-permeation film over the barrier metal and the first interlayer dielectric, the film is abraded by a chemical mechanical polishing technique until a top surface of the barrier metal is exposed. Then, a lower electrode material, a dielectric material and an upper electrode material are deposited in this order on the SiN film and the barrier metal, and then patterned such that a resulting lower electrode covers at least the entire upper surface of the barrier metal. Thereafter a second interlayer dielectric is deposited, and a heat treatment is performed in an oxygen ambient to recover film quality of a capacitor dielectric.

    摘要翻译: 在第一层间电介质中形成与MOS晶体管电连接的接触插塞。 然后,将阻挡金属材料沉积在第一层间电介质和接触插塞上,并被图案化成与接触插塞电连接的阻挡金属。 在阻挡金属和第一层间电介质上形成作为抗氧渗透膜的SiN膜之后,通过化学机械抛光技术对该膜进行研磨,直至暴露出阻挡金属的顶表面。 然后,在SiN膜和阻挡金属上依次沉积下电极材料,电介质材料和上电极材料,然后图案化,使得所得的下电极至少覆盖阻挡金属的整个上表面。 此后,沉积第二层间电介质,并在氧环境中进行热处理以恢复电容器电介质的膜质量。