摘要:
The invention relates to an electro-optic modulator structure containing an additional set of bias electrodes buried within the device for applying bias to set the operating point. Thus the RF electrodes used to modulate incoming optical signals can be operated with zero DC bias, reducing electrode corrosion by electro-migration and other effects that can be present in non-hermetic packages. The bias electrodes include an upper split portion and an optically transparent lower portion. The optically transparent lower layer improves modulation frequency and reduces optical loss.
摘要:
The invention relates to an electro-optic modulator structure containing an additional set of bias electrodes buried within the device for applying bias to set the operating point. Thus the RF electrodes used to modulate incoming optical signals can be operated with zero DC bias, reducing electrode corrosion by electro-migration and other effects that can be present in non-hermetic packages. The bias electrodes include an upper split portion and an optically transparent lower portion. The optically transparent lower layer improves modulation frequency and reduces optical loss.
摘要:
The invention relates to a wafer scale process for the manufacture of optical waveguide devices, and particularly for the manufacture of ridge waveguide devices, and the improved waveguides made thereby. The present invention has found a process for achieving sub-micron control of an optical waveguiding layer thickness by providing a dimensionally stable wafer assembly into which adhesive can be introduced without altering the planar relationship between a carrier wafer and an optically transmissive wafer in wafer scale manufacture. This process permits wafer scale manufacture of optical waveguide devices including thin optically transmissive layers. A pattern of spacer pedestals is created by a deposition and etch back, or by a surface etch process to precisely reference surface information from a master surface to a carrier wafer to a thin optically transmissive wafer. The tolerance achievable in accordance with this process provides consistent yield across the wafer.
摘要:
The invention relates to an electro-optic modulator structure containing an additional set of bias electrodes buried within the device for applying bias to set the operating point. Thus the RF electrodes used to modulate incoming optical signals can be operated with zero DC bias, reducing electrode corrosion by galvanic and other effects that can be present in non-hermetic packages. The bias electrodes are at least partially separated from the substrate with a buffer layer, which in one embodiment has a small amount of conductivity. This conductive buffer layer reduces optical loss from the bias electrodes and also reduces DC drift.
摘要:
The invention relates to an electro-optic modulator structure containing an additional set of bias electrodes buried within the device for applying bias to set the operating point. Thus the RF electrodes used to modulate incoming optical signals can be operated with zero DC bias, reducing electrode corrosion by galvanic and other effects that can be present in non-hermetic packages. The bias electrodes are at least partially separated from the substrate with a buffer layer, which in one embodiment has a small amount of conductivity. This conductive buffer layer reduces optical loss from the bias electrodes and also reduces DC drift.
摘要:
The invention relates to an electro-optic modulator structure containing an additional set of bias electrodes buried within the device for applying bias to set the operating point. Thus the RF electrodes used to modulate incoming optical signals can be operated with zero DC bias, reducing electrode corrosion by electro-migration, galvanic, and other effects that can be present in non-hermetic packages. The RF electrodes are supported by a first surface of the electro-optic substrate, while the bias electrodes are supported by a second opposite surface.
摘要:
The invention relates to an electro-optic modulator structure containing an additional set of bias electrodes buried within the device for applying bias to set the operating point. Thus the RF electrodes used to modulate incoming optical signals can be operated with zero DC bias, reducing electrode corrosion by electro-migration, galvanic, and other effects that can be present in non-hermetic packages. The RF electrodes are supported by a first surface of the electro-optic substrate, while the bias electrodes are supported by a second opposite surface.
摘要:
The invention relates to an electro-optic modulator structure containing an additional set of bias electrodes buried within the device for applying bias to set the operating point. Thus the RF electrodes used to modulate incoming optical signals can be operated with zero DC bias, reducing electrode corrosion by galvanic and other effects that can be present in non-hermetic packages. The buried bias electrodes are also advantageous in controlling charge build-up with consequent improvement in drift characteristics. The bias electrode material is useful for routing bias signals inside the device, in particular to external terminals, as well as forming encapsulating layers to permit operation in non-hermetic environments, thereby lowering manufacturing costs. Embodiments using both X-cut and Z-cut lithium niobate (LiNbO3) are presented. For the latter, the bias electrodes can be split along their axis to avoid optical losses
摘要:
The invention relates to an electro-optic modulator structure containing an additional set of bias electrodes buried within the device for applying bias to set the operating point. Thus the RF electrodes used to modulate incoming optical signals can be operated with zero DC bias, reducing electrode corrosion by galvanic and other effects that can be present in non-hermetic packages. The buried bias electrodes are also advantageous in controlling charge build-up with consequent improvement in drift characteristics. The bias electrode material is useful for routing bias signals inside the device, in particular to external terminals, as well as forming encapsulating layers to permit operation in non-hermetic environments, thereby lowering manufacturing costs. Embodiments using both X-cut and Z-cut lithium niobate (LiNbO3) are presented. For the latter, the bias electrodes can be split along their axis to avoid optical losses.
摘要:
The invention relates to a wafer scale process for the manufacture of optical waveguide devices, and particularly for the manufacture of ridge waveguide devices, and the improved waveguides made thereby. The present invention has found a process for achieving sub-micron control of an optical waveguiding layer thickness by providing a dimensionally stable wafer assembly into which adhesive can be introduced without altering the planar relationship between a carrier wafer and an optically transmissive wafer in wafer scale manufacture. This process permits wafer scale manufacture of optical waveguide devices including thin optically transmissive layers. A pattern of spacer pedestals is created by a deposition and etch back, or by a surface etch process to precisely reference surface information from a master surface to a carrier wafer to a thin optically transmissive wafer. The tolerance achievable in accordance with this process provides consistent yield across the wafer.