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    Physical vapor deposition plasma reactor with VHF source power applied through the workpiece
    2.
    发明申请
    Physical vapor deposition plasma reactor with VHF source power applied through the workpiece 有权
    具有通过工件施加VHF源功率的物理气相沉积等离子体反应器

    公开(公告)号：US20060169576A1

    公开(公告)日：2006-08-03

    申请号：US11140514

    申请日：2005-05-25

    申请人： Karl Brown ,  John Pipitone ,  Vineet Mehta ,  Ralf Hofmann ,  Wei Wang ,  Semyon Sherstinsky

    发明人： Karl Brown ,  John Pipitone ,  Vineet Mehta ,  Ralf Hofmann ,  Wei Wang ,  Semyon Sherstinsky

    IPC分类号： C23C14/00

    CPC分类号： H01J37/3408 ,  C23C14/046 ,  C23C14/345 ,  C23C14/358 ,  H01J37/32082 ,  H01J37/32706 ,  H01L21/2855 ,  H01L21/76843 ,  H01L21/76844

    摘要： A physical vapor deposition plasma reactor includes a vacuum chamber including a sidewall, a ceiling and a wafer support pedestal near a floor of the chamber, and a vacuum pump coupled to the chamber, a process gas inlet coupled to the chamber and a process gas source coupled to the process gas inlet, a metal sputter target at the ceiling, a high voltage D.C. source coupled to the sputter target, an RF plasma source power generator coupled to the wafer support pedestal and having a frequency in a range between about 60 MHz and 81 MHz, and an RF plasma bias power generator coupled to the wafer support pedestal and having a frequency suitable for coupling energy to plasma ions.

    摘要翻译： 物理气相沉积等离子体反应器包括真空室，其包括侧壁，天花板和靠近室底部的晶片支撑基座，以及耦合到该室的真空泵，耦合到该室的工艺气体入口和工艺气体源 耦合到处理气体入口，在天花板处的金属溅射靶，耦合到溅射靶的高压DC源，耦合到晶片支撑基座的RF等离子体源功率发生器，其频率在约60MHz和 81MHz，以及RF等离子体偏置功率发生器，其耦合到晶片支撑基座并且具有适于将能量耦合到等离子体离子的频率。

    Detachable electrostatic chuck for supporting a substrate in a process chamber
    3.
    发明授权
    Detachable electrostatic chuck for supporting a substrate in a process chamber 有权
    用于在处理室中支撑基板的可拆卸静电卡盘

    公开(公告)号：US07480129B2

    公开(公告)日：2009-01-20

    申请号：US11221169

    申请日：2005-09-07

    申请人： Karl Brown ,  Semyon Sherstinsky ,  Wei W. Wang ,  Cheng-Hsiung Tsai ,  Vineet Mehta ,  Allen Lau ,  Steve Sansoni

    发明人： Karl Brown ,  Semyon Sherstinsky ,  Wei W. Wang ,  Cheng-Hsiung Tsai ,  Vineet Mehta ,  Allen Lau ,  Steve Sansoni

    IPC分类号： H01L21/683

    CPC分类号： H01L21/6831 ,  Y10T279/23

    摘要： A detachable electrostatic chuck can be attached to a pedestal in a process chamber. The electrostatic chuck has an electrostatic puck comprising a dielectric covering at least one electrode and a frontside surface to receive a substrate. A backside surface of the chuck has a central protrusion that can be a D-shaped mesa to facilitate alignment with a mating cavity in the pedestal. The protrusion can also have asymmetrically offset apertures, which further assist alignment, and also serve to receive electrode terminal posts and a gas tube. A heat transfer plate having an embedded heat transfer fluid channel is spring loaded on the pedestal to press against the chuck for good heat transfer.

    摘要翻译： 可拆卸的静电卡盘可以附接到处理室中的基座。 静电吸盘具有包括覆盖至少一个电极和前侧表面的电介质的静电压盘，用于接收衬底。 卡盘的背面具有可以是D形台面的中心突起，以便于与基座中的配合腔体对准。 突起还可以具有不对称偏移的孔，其进一步辅助对准，并且还用于接收电极端子柱和气体管。 具有嵌入式传热流体通道的传热板弹簧加载在基座上以压靠卡盘以获得良好的热传递。

    Detachable electrostatic chuck
    5.
    发明授权
    Detachable electrostatic chuck 有权
    可拆卸静电卡盘

    公开(公告)号：US07697260B2

    公开(公告)日：2010-04-13

    申请号：US10816152

    申请日：2004-03-31

    申请人： Karl Brown ,  Nora Arellano ,  Semyon Sherstinsky ,  Allen Lau ,  Cheng-Hsiung Tsai ,  Vineet Mehta ,  Steve Sansoni ,  Wei W. Wang

    发明人： Karl Brown ,  Nora Arellano ,  Semyon Sherstinsky ,  Allen Lau ,  Cheng-Hsiung Tsai ,  Vineet Mehta ,  Steve Sansoni ,  Wei W. Wang

    IPC分类号： H01L21/683 ,  H01T23/00 ,  B23B31/28

    CPC分类号： H01L21/6831 ,  Y10T279/23

    摘要： An electrostatic chuck is capable of attachment to a pedestal in a process chamber. The chuck has an electrostatic puck comprises a ceramic body with an embedded electrode. The ceramic body has a substrate support surface with an annular periphery. The chuck also has a base plate below the electrostatic puck that is a composite of a ceramic material and a metal. The base plate has an annular flange extending beyond the periphery of the ceramic body. The base plate and electrostatic puck can be supported by a support pedestal having a housing and an annular ledge that extends outwardly from the housing to attach to the annular flange of the base plate. A heat transfer plate having an embedded heat transfer fluid channel can also be provided.

    摘要翻译： 静电卡盘能够附着在处理室中的基座上。 卡盘具有包括具有嵌入电极的陶瓷体的静电压盖。 陶瓷体具有带有环形周边的基板支撑表面。 卡盘还具有作为陶瓷材料和金属的复合材料的静电压盘下面的底板。 基板具有延伸超过陶瓷体周边的环形凸缘。 基板和静电圆盘可以由具有壳体的支撑基座支撑，并且环形凸缘从壳体向外延伸以附接到基板的环形凸缘。 还可以提供具有嵌入式传热流体通道的传热板。

    Pedestal with integral shield
    7.
    发明授权
    Pedestal with integral shield 有权
    带整体护罩的基座

    公开(公告)号：US06726805B2

    公开(公告)日：2004-04-27

    申请号：US10128983

    申请日：2002-04-24

    申请人： Karl Brown ,  Vineet Mehta ,  See-Eng Phan ,  Semyon Sherstinsky ,  Allen Lau

    发明人： Karl Brown ,  Vineet Mehta ,  See-Eng Phan ,  Semyon Sherstinsky ,  Allen Lau

    IPC分类号： H05H100

    CPC分类号： H01L21/67069 ,  H01J37/321 ,  H01J37/32623

    摘要： Generally, a substrate support member for supporting a substrate is provided. In one embodiment, a substrate support member for supporting a substrate includes a body coupled to a lower shield. The body has an upper surface adapted to support the substrate and a lower surface. The lower shield has a center portion and a lip. The lip is disposed radially outward of the body and projects towards a plane defined by the first surface. The lip is disposed in a spaced-apart relation from the body. The lower shield is adapted to interface with an upper shield disposed in a processing chamber to define a labyrinth gap that substantially prevents plasma from migrating below the member. The lower shield, in another embodiment, provides the plasma with a short RF ground return path.

    摘要翻译： 通常，提供了用于支撑衬底的衬底支撑构件。 在一个实施例中，用于支撑衬底的衬底支撑构件包括联接到下屏蔽的主体。 主体具有适于支撑基板和下表面的上表面。 下屏蔽件具有中心部分和唇部。 唇缘设置在身体的径向外侧并朝向由第一表面限定的平面突出。 唇缘与身体间隔开设置。 下屏蔽适于与设置在处理室中的上屏蔽接口以限定基本上防止等离子体迁移到构件下方的迷宫间隙。 在另一个实施例中，下屏蔽为等离子体提供短的RF接地返回路径。

    Pedestal with integral shield
    9.
    发明授权
    Pedestal with integral shield 有权

    公开(公告)号：US06652713B2

    公开(公告)日：2003-11-25

    申请号：US09927747

    申请日：2001-08-09

    申请人： Karl Brown ,  Vineet Mehta ,  See-Eng Phan ,  Semyon Sherstinsky ,  Allen Lau

    发明人： Karl Brown ,  Vineet Mehta ,  See-Eng Phan ,  Semyon Sherstinsky ,  Allen Lau

    IPC分类号： H05H100

    CPC分类号： H01L21/67069 ,  H01J37/321 ,  H01J37/32623

    摘要： Generally, a substrate support member for supporting a substrate is provided. In one embodiment, a substrate support member for supporting a substrate includes a body coupled to a lower shield. The body has an upper surface adapted to support the substrate and a lower surface. The lower shield has a center portion and a lip. The lip is disposed radially outward of the body and projects towards a plane defined by the first surface. The lip is disposed in a spaced-apart relation from the body. The lower shield is adapted to interface with an upper shield disposed in a processing chamber to define a labyrinth gap that substantially prevents plasma from migrating below the member. The lower shield, in another embodiment, provides the plasma with a short RF ground return path.

    Pedestal with integral shield
    10.
    发明授权
    Pedestal with integral shield 有权
    带整体护罩的基座

    公开(公告)号：US07252737B2

    公开(公告)日：2007-08-07

    申请号：US10819891

    申请日：2004-04-06

    申请人： Karl Brown ,  Vineet Mehta ,  See-Eng Phan ,  Semyon Sherstinsky ,  Allen Lau

    发明人： Karl Brown ,  Vineet Mehta ,  See-Eng Phan ,  Semyon Sherstinsky ,  Allen Lau

    IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

    CPC分类号： H01L21/67069 ,  H01J37/321 ,  H01J37/32623

    摘要： Generally, a substrate support member for supporting a substrate is provided. In one embodiment, a substrate support member for supporting a substrate includes a body coupled to a lower shield. The body has an upper surface adapted to support the substrate and a lower surface. The lower shield has a center portion and a lip. The lip is disposed radially outward of the body and projects towards a plane defined by the first surface. The lip is disposed in a spaced-apart relation from the body. The lower shield is adapted to interface with an upper shield disposed in a processing chamber to define a labyrinth gap that substantially prevents plasma from migrating below the member. The lower shield, in another embodiment, provides the plasma with a short RF ground return path.

    摘要翻译： 通常，提供了用于支撑衬底的衬底支撑构件。 在一个实施例中，用于支撑衬底的衬底支撑构件包括联接到下屏蔽的主体。 主体具有适于支撑基板和下表面的上表面。 下屏蔽件具有中心部分和唇部。 唇缘设置在身体的径向外侧并朝向由第一表面限定的平面突出。 唇缘与身体间隔开设置。 下屏蔽适于与设置在处理室中的上屏蔽接口以限定基本上防止等离子体迁移到构件下方的迷宫间隙。 在另一个实施例中，下屏蔽为等离子体提供短的RF接地返回路径。