公开(公告)号：US06652713B2

公开(公告)日：2003-11-25

申请号：US09927747

申请日：2001-08-09

申请人： Karl Brown ,  Vineet Mehta ,  See-Eng Phan ,  Semyon Sherstinsky ,  Allen Lau

发明人： Karl Brown ,  Vineet Mehta ,  See-Eng Phan ,  Semyon Sherstinsky ,  Allen Lau

IPC分类号： H05H100

CPC分类号： H01L21/67069 ,  H01J37/321 ,  H01J37/32623

摘要： Generally, a substrate support member for supporting a substrate is provided. In one embodiment, a substrate support member for supporting a substrate includes a body coupled to a lower shield. The body has an upper surface adapted to support the substrate and a lower surface. The lower shield has a center portion and a lip. The lip is disposed radially outward of the body and projects towards a plane defined by the first surface. The lip is disposed in a spaced-apart relation from the body. The lower shield is adapted to interface with an upper shield disposed in a processing chamber to define a labyrinth gap that substantially prevents plasma from migrating below the member. The lower shield, in another embodiment, provides the plasma with a short RF ground return path.

公开(公告)号：US07252737B2

公开(公告)日：2007-08-07

申请号：US10819891

申请日：2004-04-06

申请人： Karl Brown ,  Vineet Mehta ,  See-Eng Phan ,  Semyon Sherstinsky ,  Allen Lau

发明人： Karl Brown ,  Vineet Mehta ,  See-Eng Phan ,  Semyon Sherstinsky ,  Allen Lau

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： H01L21/67069 ,  H01J37/321 ,  H01J37/32623

摘要： Generally, a substrate support member for supporting a substrate is provided. In one embodiment, a substrate support member for supporting a substrate includes a body coupled to a lower shield. The body has an upper surface adapted to support the substrate and a lower surface. The lower shield has a center portion and a lip. The lip is disposed radially outward of the body and projects towards a plane defined by the first surface. The lip is disposed in a spaced-apart relation from the body. The lower shield is adapted to interface with an upper shield disposed in a processing chamber to define a labyrinth gap that substantially prevents plasma from migrating below the member. The lower shield, in another embodiment, provides the plasma with a short RF ground return path.

摘要翻译： 通常，提供了用于支撑衬底的衬底支撑构件。 在一个实施例中，用于支撑衬底的衬底支撑构件包括联接到下屏蔽的主体。 主体具有适于支撑基板和下表面的上表面。 下屏蔽件具有中心部分和唇部。 唇缘设置在身体的径向外侧并朝向由第一表面限定的平面突出。 唇缘与身体间隔开设置。 下屏蔽适于与设置在处理室中的上屏蔽接口以限定基本上防止等离子体迁移到构件下方的迷宫间隙。 在另一个实施例中，下屏蔽为等离子体提供短的RF接地返回路径。

公开(公告)号：US06726805B2

公开(公告)日：2004-04-27

申请号：US10128983

申请日：2002-04-24

申请人： Karl Brown ,  Vineet Mehta ,  See-Eng Phan ,  Semyon Sherstinsky ,  Allen Lau

发明人： Karl Brown ,  Vineet Mehta ,  See-Eng Phan ,  Semyon Sherstinsky ,  Allen Lau

IPC分类号： H05H100

CPC分类号： H01L21/67069 ,  H01J37/321 ,  H01J37/32623

摘要： Generally, a substrate support member for supporting a substrate is provided. In one embodiment, a substrate support member for supporting a substrate includes a body coupled to a lower shield. The body has an upper surface adapted to support the substrate and a lower surface. The lower shield has a center portion and a lip. The lip is disposed radially outward of the body and projects towards a plane defined by the first surface. The lip is disposed in a spaced-apart relation from the body. The lower shield is adapted to interface with an upper shield disposed in a processing chamber to define a labyrinth gap that substantially prevents plasma from migrating below the member. The lower shield, in another embodiment, provides the plasma with a short RF ground return path.

摘要翻译： 通常，提供了用于支撑衬底的衬底支撑构件。 在一个实施例中，用于支撑衬底的衬底支撑构件包括联接到下屏蔽的主体。 主体具有适于支撑基板和下表面的上表面。 下屏蔽件具有中心部分和唇部。 唇缘设置在身体的径向外侧并朝向由第一表面限定的平面突出。 唇缘与身体间隔开设置。 下屏蔽适于与设置在处理室中的上屏蔽接口以限定基本上防止等离子体迁移到构件下方的迷宫间隙。 在另一个实施例中，下屏蔽为等离子体提供短的RF接地返回路径。

公开(公告)号：US20050056370A1

公开(公告)日：2005-03-17

申请号：US10819891

申请日：2004-04-06

申请人： Karl Brown ,  Vineet Mehta ,  See-Eng Phan ,  Semyon Sherstinsky ,  Allen Lau

发明人： Karl Brown ,  Vineet Mehta ,  See-Eng Phan ,  Semyon Sherstinsky ,  Allen Lau

IPC分类号： H01J37/32 ,  H01L21/00 ,  C23F1/00

CPC分类号： H01L21/67069 ,  H01J37/321 ,  H01J37/32623

摘要： Generally, a substrate support member for supporting a substrate is provided. In one embodiment, a substrate support member for supporting a substrate includes a body coupled to a lower shield. The body has an upper surface adapted to support the substrate and a lower surface. The lower shield has a center portion and a lip. The lip is disposed radially outward of the body and projects towards a plane defined by the first surface. The lip is disposed in a spaced-apart relation from the body. The lower shield is adapted to interface with an upper shield disposed in a processing chamber to define a labyrinth gap that substantially prevents plasma from migrating below the member. The lower shield, in another embodiment, provides the plasma with a short RF ground return path.

摘要翻译： 通常，提供了用于支撑衬底的衬底支撑构件。 在一个实施例中，用于支撑衬底的衬底支撑构件包括联接到下屏蔽的主体。 主体具有适于支撑基板和下表面的上表面。 下屏蔽件具有中心部分和唇部。 唇缘设置在身体的径向外侧并朝向由第一表面限定的平面突出。 唇缘与身体间隔开设置。 下屏蔽适于与设置在处理室中的上屏蔽接口以限定基本上防止等离子体迁移到构件下方的迷宫间隙。 在另一个实施例中，下屏蔽为等离子体提供短的RF接地返回路径。

公开(公告)号：US06837968B2

公开(公告)日：2005-01-04

申请号：US10668529

申请日：2003-09-23

申请人： Karl Brown ,  Vineet Mehta ,  See-Eng Phan ,  Semyon Sherstinsky ,  Allen Lau

发明人： Karl Brown ,  Vineet Mehta ,  See-Eng Phan ,  Semyon Sherstinsky ,  Allen Lau

IPC分类号： H01J37/32 ,  H01L21/00 ,  H05H1/00 ,  C23C16/00

CPC分类号： H01L21/67069 ,  H01J37/321 ,  H01J37/32623

摘要： Generally, a substrate support member for supporting a substrate is provided. In one embodiment, a substrate support member for supporting a substrate includes a body coupled to a lower shield. The body has an upper surface adapted to support the substrate and a lower surface. The lower shield has a center portion and a lip. The lip is disposed radially outward of the body and projects towards a plane defined by the first surface. The lip is disposed in a spaced-apart relation from the body. The lower shield is adapted to interface with an upper shield disposed in a processing chamber to define a labyrinth gap that substantially prevents plasma from migrating below the member. The lower shield, in another embodiment, provides the plasma with a short RF ground return path.

摘要翻译： 通常，提供了用于支撑衬底的衬底支撑构件。 在一个实施例中，用于支撑衬底的衬底支撑构件包括联接到下屏蔽的主体。 主体具有适于支撑基板和下表面的上表面。 下屏蔽件具有中心部分和唇部。 唇缘设置在身体的径向外侧并朝向由第一表面限定的平面突出。 唇缘与身体间隔开设置。 下屏蔽适于与设置在处理室中的上屏蔽接口以限定基本上防止等离子体迁移到构件下方的迷宫间隙。 在另一个实施例中，下屏蔽为等离子体提供短的RF接地返回路径。

公开(公告)号：US07513971B2

公开(公告)日：2009-04-07

申请号：US10387948

申请日：2003-03-12

申请人： Karl Brown ,  Vineet Mehta ,  See-Eng Phan

发明人： Karl Brown ,  Vineet Mehta ,  See-Eng Phan

IPC分类号： H01L21/306 ,  C23C16/00

CPC分类号： H01J37/321

摘要： An RF coil for a plasma etch chamber is provided in which the RF coil is substantially flat over a portion of at least one turn of the coil. In one embodiment, each turn of the coil is substantially flat over a majority of each turn. In one embodiment of the present inventions, each turn of the coil is substantially flat over approximately 300 degrees of the turn. In the final approximate 60 degrees of the turn, the coil is sloped down to the next turn. Each turn thus comprises a substantially flat portion in combination with a sloped portion interconnecting the turn to the next adjacent turn. In one embodiment, the RF coil having turns with substantially flat portions is generally cylindrical. Other shapes are contemplated such as a dome shape. In some applications such as an RF plasma etch reactor, it is believed that providing an RF coil having turns comprising flat portions with sloped portions interconnecting the flat portions can improve uniformity of the etch process.

摘要翻译： 提供了一种用于等离子体蚀刻室的RF线圈，其中RF线圈在线圈的至少一圈的一部分上基本上是平坦的。 在一个实施例中，线圈的每个匝在每匝的大部分上基本平坦。 在本发明的一个实施例中，线圈的每一圈在转弯的大约300度处基本平坦。 在最终大约60度的转弯中，线圈向下倾斜到下一回合。 因此，每个转弯包括基本平坦的部分，与将转弯相互连接到下一个相邻转弯的倾斜部分组合。 在一个实施例中，具有基本平坦部分的匝的RF线圈通常为圆柱形。 可以想到其它形状，例如圆顶形状。 在诸如RF等离子体蚀刻反应器的一些应用中，据信提供具有包括平坦部分的匝的RF线圈，其具有互连平坦部分的倾斜部分可以提高蚀刻工艺的均匀性。

公开(公告)号：US08815724B2

公开(公告)日：2014-08-26

申请号：US13452237

申请日：2012-04-20

申请人： Seshadri Ganguli ,  Schubert S. Chu ,  Mei Chang ,  Sang-ho Yu ,  Kevin Moraes ,  See-Eng Phan

发明人： Seshadri Ganguli ,  Schubert S. Chu ,  Mei Chang ,  Sang-ho Yu ,  Kevin Moraes ,  See-Eng Phan

IPC分类号： H01L21/28 ,  H01L21/44

CPC分类号： C23C16/42 ,  C23C16/18 ,  C23C16/56 ,  H01L21/0206 ,  H01L21/02063 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/67207 ,  H01L21/68785 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76855 ,  H01L29/665 ,  H01L29/78

摘要： Embodiments of the invention described herein generally provide methods and apparatuses for forming cobalt silicide layers, metallic cobalt layers, and other cobalt-containing materials. In one embodiment, a method for forming a cobalt silicide containing material on a substrate is provided which includes exposing a substrate to at least one preclean process to expose a silicon-containing surface, depositing a cobalt silicide material on the silicon-containing surface, depositing a metallic cobalt material on the cobalt silicide material, and depositing a metallic contact material on the substrate. In another embodiment, a method includes exposing a substrate to at least one preclean process to expose a silicon-containing surface, depositing a cobalt silicide material on the silicon-containing surface, expose the substrate to an annealing process, depositing a barrier material on the cobalt silicide material, and depositing a metallic contact material on the barrier material.

摘要翻译： 本文所述的本发明的实施例通常提供用于形成硅化钴层，金属钴层和其它含钴材料的方法和装置。 在一个实施例中，提供了一种用于在衬底上形成含钴硅化物的材料的方法，其包括将衬底暴露于至少一个预清洗工艺以暴露含硅表面，在含硅表面上沉积钴硅化物材料，沉积 在钴硅化物材料上的金属钴材料，并在基底上沉积金属接触材料。 在另一个实施例中，一种方法包括将衬底暴露于至少一个预清洗工艺以暴露含硅表面，在含硅表面上沉积钴硅化物材料，将衬底暴露于退火工艺，将阻挡材料沉积在 钴硅化物材料，并将金属接触材料沉积在阻挡材料上。

公开(公告)号：US20090004850A1

公开(公告)日：2009-01-01

申请号：US12111923

申请日：2008-04-29

申请人： SESHADRI GANGULI ,  SANG-HO YU ,  See-Eng Phan ,  Mei Chang ,  Amit Khandelwal ,  Hyoung-Chan Ha

发明人： SESHADRI GANGULI ,  SANG-HO YU ,  See-Eng Phan ,  Mei Chang ,  Amit Khandelwal ,  Hyoung-Chan Ha

IPC分类号： H01L21/44

CPC分类号： C23C16/18 ,  C23C16/42 ,  C23C16/45523 ,  C23C16/56 ,  H01L21/0206 ,  H01L21/02063 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/67207 ,  H01L21/68785 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76855 ,  H01L29/665 ,  H01L29/78

摘要： Embodiments of the invention described herein generally provide methods for forming cobalt silicide layers and metallic cobalt layers by using various deposition processes and annealing processes. In one embodiment, a method for forming a metallic silicide containing material on a substrate is provided which includes forming a metallic silicide material over a silicon-containing surface during a vapor deposition process by sequentially depositing a plurality of metallic silicide layers and silyl layers on the substrate, depositing a metallic capping layer over the metallic silicide material, heating the substrate during an annealing process, and depositing a metallic contact material over the barrier material. In one example, the metallic silicide layers and the metallic capping layer both contain cobalt. The cobalt silicide material may contain a silicon/cobalt atomic ratio of about 1.9 or greater, such as greater than about 2.0, or about 2.2 or greater.

摘要翻译： 本文描述的本发明的实施例通常提供通过使用各种沉积工艺和退火工艺来形成钴硅化物层和金属钴层的方法。 在一个实施例中，提供了一种用于在基板上形成含金属硅化物的材料的方法，其包括在气相沉积工艺期间在含硅表面上形成金属硅化物材料，通过在其上顺序地沉积多个金属硅化物层和甲硅烷基层 衬底，在所述金属硅化物材料上沉积金属覆盖层，在退火过程期间加热所述衬底，以及在所述阻挡材料上沉积金属接触材料。 在一个实例中，金属硅化物层和金属覆盖层都含有钴。 钴硅化物材料可以含有约1.9或更大，例如大于约2.0，或约2.2或更大的硅/钴原子比。

公开(公告)号：US20070181057A1

公开(公告)日：2007-08-09

申请号：US11346804

申请日：2006-02-03

申请人： Andrew Lam ,  Yihwan Kim ,  Satheesh Kuppurao ,  See-Eng Phan ,  Xinliang Lu ,  Chien-Teh Kao

发明人： Andrew Lam ,  Yihwan Kim ,  Satheesh Kuppurao ,  See-Eng Phan ,  Xinliang Lu ,  Chien-Teh Kao

IPC分类号： C30B23/00 ,  C23C16/00 ,  C30B25/00 ,  C30B28/14

CPC分类号： C23C16/452 ,  C23C16/0236 ,  C23C16/505 ,  H01L21/31116 ,  H01L21/67069

摘要： An epitaxial deposition process including a dry etch process, followed by an epitaxial deposition process is disclosed. The dry etch process involves placing a substrate to be cleaned into a processing chamber to remove surface oxides. A gas mixture is introduced into a plasma cavity, and the gas mixture is energized to form a plasma of reactive gas in the plasma cavity. The reactive gas enters into the processing chamber and reacts with the substrate, forming a thin film. The substrate is heated to vaporize the thin film and expose an epitaxy surface. The epitaxy surface is substantially free of oxides. Epitaxial deposition is then used to form an epitaxial layer on the epitaxy surface.

摘要翻译： 公开了一种外延沉积工艺，其包括干蚀刻工艺，随后进行外延沉积工艺。 干蚀刻工艺涉及将要清洗的基底放置在处理室中以去除表面氧化物。 将气体混合物引入等离子体空腔中，并且气体混合物被激发以在等离子体腔中形成反应气体的等离子体。 反应气体进入处理室并与基板反应，形成薄膜。 将衬底加热以蒸发薄膜并暴露外延表面。 外延表面基本上不含氧化物。 然后使用外延沉积在外延表面上形成外延层。

公开(公告)号：US20120214303A1

公开(公告)日：2012-08-23

申请号：US13456904

申请日：2012-04-26

申请人： SESHADRI GANGULI ,  Sang-Ho Yu ,  See-Eng Phan ,  Mei Chang ,  Amit Khandelwal ,  Hyoung-Chan Ha

发明人： SESHADRI GANGULI ,  Sang-Ho Yu ,  See-Eng Phan ,  Mei Chang ,  Amit Khandelwal ,  Hyoung-Chan Ha

IPC分类号： H01L21/3205

CPC分类号： C23C16/18 ,  C23C16/42 ,  C23C16/45523 ,  C23C16/56 ,  H01L21/0206 ,  H01L21/02063 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/67207 ,  H01L21/68785 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76855 ,  H01L29/665 ,  H01L29/78

摘要： Embodiments of the invention generally provide methods for forming cobalt silicide. In one embodiment, a method for forming a cobalt silicide material includes exposing a substrate having a silicon-containing material to either a wet etch solution or a pre-clean plasma during a first step and then to a hydrogen plasma during a second step of a pre-clean process. The method further includes depositing a cobalt metal layer on the silicon-containing material by a CVD process, heating the substrate to form a first cobalt silicide layer comprising CoSi at the interface of the cobalt metal layer and the silicon-containing material during a first annealing process, removing any unreacted cobalt metal from the substrate during an etch process, and heating the substrate to form a second cobalt silicide layer comprising CoSi2 during a second annealing process.

摘要翻译： 本发明的实施方案通常提供形成硅化钴的方法。 在一个实施例中，用于形成钴硅化物材料的方法包括在第一步骤期间将具有含硅材料的衬底暴露于湿蚀刻溶液或预清洁等离子体中，然后在第二步骤期间暴露于氢等离子体 预清洁过程。 该方法还包括通过CVD工艺在含硅材料上沉积钴金属层，加热衬底以在第一退火期间在钴金属层和含硅材料的界面处形成包含CoSi的第一钴硅化物层 在蚀刻过程中从衬底去除任何未反应的钴金属，以及在第二退火过程中加热衬底以形成包含CoSi 2的第二钴硅化物层。