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25 条记录 (耗时 0.027 秒)

    Method for producing highly purified, granular silicium
    1.
    发明授权
    Method for producing highly purified, granular silicium 失效
    高纯度粒状硅生产方法

    公开(公告)号：US07001579B2

    公开(公告)日：2006-02-21

    申请号：US10451577

    申请日：2001-11-21

    申请人： Karl-Ludwig Metzger ,  Leslaw Mleczko ,  Sigurd Buchholz ,  Philipp Schlichthärle

    发明人： Karl-Ludwig Metzger ,  Leslaw Mleczko ,  Sigurd Buchholz ,  Philipp Schlichthärle

    IPC分类号： C01B33/02

    CPC分类号： B01J8/32 ,  C01B33/027 ,  C01B33/029

    摘要： The invention relates to a method for producing granular silicon by thermal decomposition of a gas containing silicon in a fluidized bed, said decomposition occurring in the presence of free-flowing mobile elements. Preferably, said free-flowing mobile elements become devoid of silicon in a separate procedural step, said silicon being deposited during decomposition of gas containing silicon, by reacting with hydrogen halides, halogens, alkyl halogenides, aryl halogenides or combinations of halogen and/or hydrogen halide and/or oxidized mineral acids and/or by thermal treatment of said elements.

    摘要翻译： 本发明涉及通过在流化床中热分解含硅气体来生产颗粒状硅的方法，所述分解发生在自由流动的移动元件的存在下。 优选地，所述自由流动的移动元件在单独的程序步骤中变得不含硅，所述硅在分解包含硅的气体期间通过与卤化氢，卤素，烷基卤化物，芳基卤化物或卤素和/或氢的组合反应而沉积 卤化物和/或氧化的无机酸和/或通过所述元件的热处理。

    Method for producing silane
    10.
    发明授权
    Method for producing silane 失效
    硅烷的制造方法

    公开(公告)号：US06852301B2

    公开(公告)日：2005-02-08

    申请号：US10450207

    申请日：2001-11-21

    申请人： Hans-Dieter Block ,  Leslaw Mleczko ,  Andreas Bulan ,  Rainer Weber ,  Sigurd Buchholz ,  Torsten Sill

    发明人： Hans-Dieter Block ,  Leslaw Mleczko ,  Andreas Bulan ,  Rainer Weber ,  Sigurd Buchholz ,  Torsten Sill

    IPC分类号： C01B33/04 ,  C01B33/18

    CPC分类号： C01B33/046 ,  C01B33/043 ,  C01B33/18

    摘要： The invention relates to a method for producing silane (SiH4) by a) reacting metallurgical silicon with silicon tetrachloride (SiCl4) and hydrogen (H2), to form a crude gas stream containing trichlorosilane (SiHCl3) and silicon tetrachloride (SiCl4), b) removing impurities from the resulting crude gas stream by washing with condensed chlorosilanes, c) condensing and subsequently, separating the purified crude gas stream by distillation, d) returning the partial stream consisting essentially of SiCl4 to the reaction of metallurgical silicon with SiCl4 and H2, e) disproportionating the partial stream containing SiHCl3, to form SiCl4 and SiH4 and f) returning the SiH4 formed by disproportionation to the reaction of metallurgical silicon with SiCl4 and H2, the crude gas stream containing trichlorosilane and silicon tetrachloride being liberated from solids as far as possible by gas filtration before being washed with the condensed chlorosilanes. The washing process with the condensed chlorosilanes is carried out at a pressure of 25 to 40 bar and at a temperature of at least 150° C. in a single-stage distillation column and is carried out in such a way that 0.1 to 3 wt. % of the crude gas stream containing trichlorosilane and silicon tetrachloride is recovered in the form of a condensed liquid phase consisting essentially of SiCl4, this liquid phase then being removed from the SiCl4 circuit and expanded to a pressure of 1 bar outside said SiCl4 circuit and cooled to a temperature of 10 to 40° C., whereby dissolved impurities separate out and are then removed by filtration.

    摘要翻译： 本发明涉及一种通过以下步骤制备硅烷（SiH 4）的方法：a）使冶金硅与四氯化硅（SiCl 4）和氢（H 2）反应，形成含有三氯硅烷（SiHCl 3）和四氯化硅（SiCl 4）的粗气流，b） 通过用冷凝的氯硅烷洗涤从所得粗气流中除去杂质，c）冷凝并随后通过蒸馏分离纯化的粗气流，d）将基本上由SiCl 4组成的部分流返回到冶金硅与SiCl 4和H 2的反应中， e）歧化含SiHCl3的部分流，以形成SiCl4和SiH4，以及f）将通过歧化形成的SiH 4返回至冶金硅与SiCl4和H2的反应，将含有三氯硅烷和四氯化硅的粗气流从固体释放至 在用冷凝的氯硅烷洗涤之前可能通过气体过滤。 冷凝氯硅烷的洗涤过程在单级蒸馏塔中在25至40巴的压力和至少150℃的温度下进行，并以0.1至3重量％ 含有三氯硅烷和四氯化硅的粗气流的％以基本上由SiCl 4组成的冷凝液相的形式回收，然后将该液相从SiCl4回路除去并在SiCl 4回路外扩张至1巴的压力，并冷却 温度为10〜40℃，由此分离出溶解的杂质，然后通过过滤除去。