摘要:
A magnetoresistive device includes a magnetoresistive film and a pair of electrodes for applying a sense current substantially perpendicularly to the magnetoresistive film. The magnetoresistive film includes a magnetization pinned film including a first ferromagnetic layer having a magnetization direction substantially pinned in one direction, a magnetization free film including a second ferromagnetic layer whose magnetization direction changes in accordance with an external magnetic field applied thereto, an intermediate layer formed between the magnetization pinned film and the magnetization free film and having an insulating film and a metal conduction portion extending in the film thickness direction of the insulating film, and a layer containing an electrovalent or covalent compound formed near the metal conduction portion.
摘要:
A magnetoresistive element includes a magnetoresistive film having a magnetization pinned layer, a magnetization free layer, and a nonmagnetic intermediate layer. A magnetization direction of the magnetization pinned layer is substantially fixed in an external magnetic field, a magnetization direction of the magnetization free layer is configured to change in the external magnetic field, and the nonmagnetic intermediate layer formed between the magnetization pinned layer and the magnetization free layer and has a stacked structure of a first non-metallic intermediate layer/a metal intermediate layer/a second non-metallic intermediate layer. The magnetoresistive element also includes a pair of electrodes coupled to the magnetoresistive film and is configured to provide a current in a direction substantially perpendicular to a surface of the magnetoresistive film.
摘要:
A magnetoresistance effect element of the dual spin valve type using a current-perpendicular-to-the-plane (CPP) system where a sensing current flows perpendicular to the stacked faces of a plurality of conductive layers, the magnetoresistance effect element comprises a first unit which includes a free layer and a first pinning layer, a second unit which includes the free layer shared with the first unit and a second pinning layer, a first current control layer which is provided in the first unit and limits the flow quantity of the sensing current, and a second current control layer which is provided in the second unit and limits the flow quantity of the sensing current.
摘要:
A magnetoresistance effect element of the dual spin valve type using a current-perpendicular-to-the-plane (CPP) system where a sensing current flows perpendicular to the stacked faces of a plurality of conductive layers, the magnetoresistance effect element comprises a first unit which includes a free layer and a first pinning layer, a second unit which includes the free layer shared with the first unit and a second pinning layer, a first current control layer which is provided in the first unit and limits the flow quantity of the sensing current, and a second current control layer which is provided in the second unit and limits the flow quantity of the sensing current.
摘要:
A magnetoresistance effect element of the dual spin valve type using a current-perpendicular-to-the-plane (CPP) system where a sensing current flows perpendicular to the stacked faces of a plurality of conductive layers, the magnetoresistance effect element comprises a first unit which includes a free layer and a first pinning layer, a second unit which includes the free layer shared with the first unit and a second pinning layer, a first current control layer which is provided in the first unit and limits the flow quantity of the sensing current, and a second current control layer which is provided in the second unit and limits the flow quantity of the sensing current.
摘要:
A magnetoresistance effect element of the dual spin valve type using a current-perpendicular-to-the-plane (CPP) system where a sensing current flows perpendicular to the stacked faces of a plurality of conductive layers, the magnetoresistance effect element comprises a first unit which includes a free layer and a first pinning layer, a second unit which includes the free layer shared with the first unit and a second pinning layer, a first current control layer which is provided in the first unit and limits the flow quantity of the sensing current, and a second current control layer which is provided in the second unit and limits the flow quantity of the sensing current.
摘要:
It is made possible to reduce the write magnetic field generated from the main magnetic pole toward the spin torque oscillator, so as to reduce the variation in the oscillation characteristics of the spin torque oscillator, and reduce the current required for oscillation. The magnetic head assembly includes: a recording magnetic pole; a spin torque oscillator that has first and second magnetic layers, and an intermediate layer interposed between the first and second magnetic layers, the spin torque oscillator generating a high-frequency magnetic field by applying a current between the first and second magnetic layers; and a third magnetic layer that is placed adjacent to at least part of a side face of the second magnetic layer.
摘要:
According to one embodiment, a magnetic recording device includes a magnetic recording head and a magnetic recording medium. The magnetic recording head includes a main magnetic pole, a shield and a stacked structure. The main magnetic pole has a medium facing surface and a main magnetic pole side surface. The shield has a shield side surface. The stacked structure is provided between the main magnetic pole and shield, and includes first and second magnetic layers, and an intermediate layer. The magnetic recording medium includes a backing layer and a magnetic recording layer. A distance between an end portion of the medium facing surface on a side of the stacked structure and the backing layer is twice or more of a distance between the main magnetic pole side surface and the shield side surface.
摘要:
A magnetic recording head includes a first ferromagnetic layer, an intermediate layer, a third ferromagnetic layer, a first magnetic pole and a second magnetic pole. The intermediate layer is provided between the first ferromagnetic layer and the second ferromagnetic layer. The third ferromagnetic layer includes a CoIr alloy and is provided so that the first ferromagnetic layer is sandwiched between the third ferromagnetic layer and the intermediate layer. The first magnetic pole is provided so that the third ferromagnetic layer is sandwiched between the first magnetic pole and the first ferromagnetic layer. The second magnetic pole is provided so that the second ferromagnetic layer is sandwiched between the second magnetic pole and the intermediate layer.
摘要:
It is made possible to improve the recording resolution. A magnetic recording head includes: a magnetic pole that has a first magnetic portion including an air bearing surface, and generates a write magnetic field; and a spin torque oscillator that is formed on the air bearing surface of the magnetic pole, and is formed with a stack structure including a first magnetic layer, a second magnetic layer, and a nonmagnetic layer interposed between the first magnetic layer and the second magnetic layer, the second magnetic layer generating a high-frequency magnetic field when current is applied between the first magnetic layer and the second magnetic layer.