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    Solid-state image pickup apparatus
    1.
    发明授权
    Solid-state image pickup apparatus 有权
    固态摄像装置

    公开(公告)号：US07973835B2

    公开(公告)日：2011-07-05

    申请号：US10967360

    申请日：2004-10-19

    申请人： Katsuhito Sakurai ,  Shigetoshi Sugawa ,  Hideyuki Arai ,  Isamu Ueno ,  Katsuhisa Ogawa ,  Toru Koizumi ,  Tetsunobu Kochi ,  Hiroki Hiyama

    发明人： Katsuhito Sakurai ,  Shigetoshi Sugawa ,  Hideyuki Arai ,  Isamu Ueno ,  Katsuhisa Ogawa ,  Toru Koizumi ,  Tetsunobu Kochi ,  Hiroki Hiyama

    IPC分类号： H04N5/217 ,  H04N3/14 ,  H01L27/00

    CPC分类号： H04N5/35563 ,  H04N5/3559 ,  H04N5/3575

    摘要： This invention is to provide a solid-state image pickup apparatus including a photoelectric conversion unit (PD), transfer switch (MTX) for transferring signal charges from the photoelectric conversion unit, capacitance for holding the transferred signal charges, and amplification transistor (MSF) for outputting a signal corresponding to the signal charges held by the capacitance. The amplification transistor includes a capacitance unit (CFD) having the first capacitance value and an additive capacitance unit (Cox) for adding a capacitance to the capacitance unit to increase the first capacitance value and obtain the second capacitance value. A signal read-out from the amplification transistor has a first read-out mode in which a signal is read out while keeping the signal charges held by the capacitance unit and additive capacitance unit, and a second read-out mode in which a signal is read out while keeping the signal charges held by the capacitance unit.

    摘要翻译： 本发明提供一种固态摄像装置，包括光电转换单元（PD），用于传送来自光电转换单元的信号电荷的转移开关（MTX），用于保持传送的信号电荷的电容和放大晶体管（MSF） 用于输出对应于由电容保持的信号电荷的信号。 放大晶体管包括具有第一电容值的电容单元（CFD）和用于将电容添加到电容单元的增加电容单元（Cox），以增加第一电容值并获得第二电容值。 从放大晶体管读出的信号具有第一读出模式，其中在保持由电容单元和附加电容单元保持的信号电荷的同时读出信号，以及第二读出模式，其中信号为 在保持由电容单元保持的信号电荷的同时读出。

    Image pickup element
    3.
    发明授权
    Image pickup element 失效
    摄像元件

    公开(公告)号：US07142233B1

    公开(公告)日：2006-11-28

    申请号：US09210545

    申请日：1998-12-14

    申请人： Katsuhisa Ogawa ,  Shigetoshi Sugawa ,  Hideyuki Arai ,  Isamu Ueno ,  Toru Koizumi ,  Tetsunobu Kochi ,  Katsuhito Sakurai ,  Hiroki Hiyama

    发明人： Katsuhisa Ogawa ,  Shigetoshi Sugawa ,  Hideyuki Arai ,  Isamu Ueno ,  Toru Koizumi ,  Tetsunobu Kochi ,  Katsuhito Sakurai ,  Hiroki Hiyama

    IPC分类号： H04N5/235 ,  H04N5/228

    CPC分类号： H04N9/045 ,  H04N2209/046

    摘要： To output a color image signal of an arbitrary basic block and facilitate processing on the output side, an image pickup element including a plurality of photodetectors each having a color filter array, a vertical direction selection circuit for selecting in the vertical direction an arbitrary basic block having at least one of the plurality of photodetectors, a horizontal direction selection circuit for selecting the arbitrary basic block in the horizontal direction, and an output circuit for parallelly outputting outputs from the photodetectors in the arbitrary basic block selected by the vertical direction selection circuit and horizontal direction selection circuit is provided.

    摘要翻译： 为了输出任意基本块的彩色图像信号并且便于在输出侧进行处理，包括多个具有滤色器阵列的光电检测器的图像拾取元件，用于在垂直方向上选择任意基本块的垂直方向选择电路 具有多个光电检测器中的至少一个，用于选择水平方向上的任意基本块的水平方向选择电路和用于并行地输出由垂直方向选择电路选择的任意基本块中的光电检测器的输出的输出电路和 提供水平方向选择电路。

    Solid-state image pickup apparatus
    4.
    发明申请
    Solid-state image pickup apparatus 有权
    固态摄像装置

    公开(公告)号：US20050052554A1

    公开(公告)日：2005-03-10

    申请号：US10967360

    申请日：2004-10-19

    申请人： Katsuhito Sakurai ,  Shigetoshi Sugawa ,  Hideyuki Arai ,  Isamu Ueno ,  Katsuhisa Ogawa ,  Toru Koizumi ,  Tetsunobu Kochi ,  Hiroki Hiyama

    发明人： Katsuhito Sakurai ,  Shigetoshi Sugawa ,  Hideyuki Arai ,  Isamu Ueno ,  Katsuhisa Ogawa ,  Toru Koizumi ,  Tetsunobu Kochi ,  Hiroki Hiyama

    IPC分类号： H04N5/355 ,  H04N5/378 ,  H04N5/335

    CPC分类号： H04N5/35563 ,  H04N5/3559 ,  H04N5/3575

    摘要： This invention is to provide a solid-state image pickup apparatus including a photoelectric conversion unit (PD), transfer switch (MTX) for transferring signal charges from the photoelectric conversion unit, capacitance for holding the transferred signal charges, and amplification transistor (MSF) for outputting a signal corresponding to the signal charges held by the capacitance. The amplification transistor includes a capacitance unit (CFD) having the first capacitance value and an additive capacitance unit (Cox) for adding a capacitance to the capacitance unit to increase the first capacitance value and obtain the second capacitance value. A signal read-out from the amplification transistor has a first read-out mode in which a signal is read out while keeping the signal charges held by the capacitance unit and additive capacitance unit, and a second read-out mode in which a signal is read out while keeping the signal charges held by the capacitance unit.

    摘要翻译： 本发明提供一种固态摄像装置，包括光电转换单元（PD），用于传送来自光电转换单元的信号电荷的转移开关（MTX），用于保持传送的信号电荷的电容和放大晶体管（MSF） 用于输出对应于由电容保持的信号电荷的信号。 放大晶体管包括具有第一电容值的电容单元（CFD）和用于将电容添加到电容单元的增加电容单元（Cox），以增加第一电容值并获得第二电容值。 从放大晶体管读出的信号具有第一读出模式，其中在保持由电容单元和附加电容单元保持的信号电荷的同时读出信号，以及第二读出模式，其中信号为 在保持由电容单元保持的信号电荷的同时读出。

    Solid-state image pickup element
    6.
    发明授权
    Solid-state image pickup element 失效
    固态摄像元件

    公开(公告)号：US06831685B1

    公开(公告)日：2004-12-14

    申请号：US09316947

    申请日：1999-05-24

    申请人： Isamu Ueno ,  Shigetoshi Sugawa ,  Katsuhisa Ogawa ,  Toru Koizumi ,  Tetsunobu Kochi ,  Katsuhito Sakurai ,  Hiroki Hiyama

    发明人： Isamu Ueno ,  Shigetoshi Sugawa ,  Katsuhisa Ogawa ,  Toru Koizumi ,  Tetsunobu Kochi ,  Katsuhito Sakurai ,  Hiroki Hiyama

    IPC分类号： H04N964

    CPC分类号： H04N5/3698 ,  H04N5/3595 ,  H04N5/376 ,  H04N5/378

    摘要： This invention is to provide a solid-state image pickup element including a sensor unit including a plurality of lines of photoelectric conversion units for generating charges from received light by photoelectric conversion, a memory unit including a plurality of lines of storage units for storing signals from the plurality of lines of photoelectric conversion units, a transfer unit for transferring a signal from the sensor unit to the memory unit, a control unit for causing storage units of an arbitrary block in the memory unit to output an image signal from the photoelectric conversion units and causing the photoelectric conversion units corresponding to the storage units of the arbitrary block to output a noise signal, and a subtracting unit for calculating a difference between the image signal and the noise signal.

    摘要翻译： 本发明提供一种固态摄像元件，包括：传感器单元，包括多条光电转换单元，用于通过光电转换从接收的光产生电荷;存储单元，包括多行存储单元，用于存储来自 多条光电转换单元，用于将信号从传感器单元传送到存储单元的转移单元，用于使存储单元中的任意块的存储单元输出来自光电转换单元的图像信号的控制单元 并且使与所述任意块的存储单元对应的光电转换单元输出噪声信号，以及用于计算图像信号和噪声信号之间的差的减法单元。

    Solid-state image pickup device
    8.
    发明授权
    Solid-state image pickup device 有权
    固态图像拾取装置

    公开(公告)号：US06188094B1

    公开(公告)日：2001-02-13

    申请号：US09270008

    申请日：1999-03-16

    申请人： Tetsunobu Kochi ,  Shigetoshi Sugawa ,  Isamu Ueno ,  Katsuhisa Ogawa ,  Toru Koizumi ,  Katsuhito Sakurai ,  Hiroki Hiyama

    发明人： Tetsunobu Kochi ,  Shigetoshi Sugawa ,  Isamu Ueno ,  Katsuhisa Ogawa ,  Toru Koizumi ,  Katsuhito Sakurai ,  Hiroki Hiyama

    IPC分类号： H01L27148

    CPC分类号： H01L27/14629 ,  H01L27/14609 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14643 ,  H01L27/14692 ,  H01L27/14698

    摘要： To achieve a high density, high resolution, or size reduction, there is provided a solid-state image pickup device having a plurality of photoelectric conversion elements formed in a semiconductor substrate, conductive layers formed on the semiconductor substrate between the neighboring photoelectric conversion elements via an interlayer layer, a first interlayer layer formed on the photoelectric conversion elements and conductive layers, a second interlayer layer formed on the first interlayer layer, and microlenses formed above the photoelectric conversion elements, wherein the refraction index of the first interlayer layer located above the photoelectric conversion elements is different from that of the second interlayer layer.

    摘要翻译： 为了实现高密度，高分辨率或尺寸减小，提供了一种固态图像拾取装置，其具有形成在半导体衬底中的多个光电转换元件，在相邻的光电转换元件之间的半导体衬底上形成的导电层经由 层间层，形成在光电转换元件和导电层上的第一层间层，形成在第一层间层上的第二层间层和形成在光电转换元件上方的微透镜，其中位于第一层间层上方的第一层间层的折射率 光电转换元件与第二层间层不同。

    Image sensing device using MOS type image sensing elements
    10.
    发明授权
    Image sensing device using MOS type image sensing elements 失效
    图像感测器件采用MOS型摄像元件

    公开(公告)号：US06946637B2

    公开(公告)日：2005-09-20

    申请号：US10680181

    申请日：2003-10-08

    申请人： Tetsunobu Kochi ,  Shigetoshi Sugawa ,  Isamu Ueno ,  Katsuhisa Ogawa ,  Toru Koizumi ,  Katsuhito Sakurai ,  Hiroki Hiyama

    发明人： Tetsunobu Kochi ,  Shigetoshi Sugawa ,  Isamu Ueno ,  Katsuhisa Ogawa ,  Toru Koizumi ,  Katsuhito Sakurai ,  Hiroki Hiyama

    IPC分类号： H01L27/146 ,  H04N5/355 ,  H04N5/363 ,  H04N5/365 ,  H04N5/374 ,  H04N5/3745 ,  H01J40/14

    CPC分类号： H04N5/37452 ,  H01L27/14609 ,  H01L27/14643 ,  H04N5/3559 ,  H04N5/363 ,  H04N5/365 ,  H04N5/374 ,  H04N5/3741

    摘要： In a photoelectric conversion device having a plurality of pixel cells each of which includes a photoelectric conversion element, a field effect transistor having the gate area for storing signal charge generated by the photoelectric conversion element and the source-drain path for outputting a signal corresponding to the signal charge stored in the gate, a first power supply line for supplying electric power to the field effect transistor, and a first switch connected between the field effect transistor and the first power supply line, when a reset voltage for resetting the gate of the field effect transistor is Vsig0, a threshold voltage of the field effect transistor is Vth, current flowing through the field effect transistor is Ia, a voltage applied via the first power supply line is Vc1, and a series resistance of the first switch is Ron, each pixel cell is configured to satisfy a condition determined by Vc1−Ron×Ia>Vsig0−Vth.

    摘要翻译： 在具有包括光电转换元件的多个像素单元的光电转换装置中，具有用于存储由光电转换元件生成的信号电荷的栅极区域的场效应晶体管和用于输出与光电转换元件对应的信号的源极 - 漏极路径 存储在栅极中的信号电荷，用于向场效应晶体管提供电力的第一电源线和连接在场效应晶体管和第一电源线之间的第一开关，当用于复位栅极的复位电压 场效应晶体管是V Sig0 ，场效应晶体管的阈值电压为V th，则流过场效应晶体管的电流为I / ，经由第一电源线施加的电压为V C1，并且第一开关的串联电阻为R＆lt;＆lt;＆gt;，每个像素单元被配置为满足所确定的条件 通过V c1 <！ - SIPO